会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Organic light emitting diode display and method of manufacturing the same
    • 有机发光二极管显示器及其制造方法
    • US08698251B2
    • 2014-04-15
    • US12662362
    • 2010-04-13
    • Oh-Seob KwonMoo-Soon Ko
    • Oh-Seob KwonMoo-Soon Ko
    • H01L27/11H01L21/00H01L21/84
    • H01L27/3262H01L27/1255H01L27/3265
    • An organic light emitting diode display includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including an impurity-doped polycrystalline silicon layer, a first capacitor electrode on the substrate main body, the first capacitor electrode including an impurity-doped polycrystalline silicon layer, and bottom surfaces of the first capacitor electrode and semiconductor layer facing the substrate main body being substantially coplanar, a gate insulating layer on the semiconductor layer and the first capacitor electrode, a gate electrode on the semiconductor layer with the gate insulating layer therebetween, and a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, bottom surfaces of the second capacitor electrode and gate electrode facing the substrate main body being substantially coplanar, and the second capacitor electrode having a smaller thickness than the gate electrode.
    • 有机发光二极管显示器包括:基板,在基板上的半导体层,包括杂质掺杂多晶硅层的半导体层,在基板主体上的第一电容器电极,第一电容器电极,包括杂质掺杂多晶硅 第一电容器电极的层和底表面和基板主体的半导体层基本上共面;半导体层上的栅极绝缘层和第一电容器电极;半导体层上的栅极绝缘层之间的栅电极, 以及第一电容器电极上的第二电容器电极,其间具有栅极绝缘层,第二电容器电极和栅电极的面对基板主体的底表面基本上共面,并且第二电容器电极的厚度小于栅电极的厚度。
    • 2. 发明授权
    • Organic light emitting diode display and manufacturing method thereof
    • 有机发光二极管显示及其制造方法
    • US08937315B2
    • 2015-01-20
    • US12929994
    • 2011-03-01
    • Oh-Seob KwonDeuk-Jong KimMoo-Soon Ko
    • Oh-Seob KwonDeuk-Jong KimMoo-Soon Ko
    • H01L29/12H01L33/18H01L33/38
    • H01L33/18H01L27/3265H01L33/38H01L2924/0002H01L2924/00
    • An organic light emitting diode display includes a substrate main body, a semiconductor layer and a first capacitor electrode on the substrate main body, bottom surfaces of the semiconductor layer and first capacitor electrode being substantially coplanar, and each of the semiconductor layer and first capacitor electrode including an impurity-doped polysilicon layer, a gate insulating layer on the semiconductor layer and the first capacitor electrode, a gate electrode on the semiconductor layer with the gate insulating layer therebetween, and a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, the second capacitor electrode including a convex electrode portion and a concave electrode portion, the concave electrode portion being thinner than each of the convex electrode portion and the gate electrode.
    • 有机发光二极管显示器包括在基板主体上的基板主体,半导体层和第一电容器电极,半导体层和第一电容器电极的底表面基本上共面,半导体层和第一电容器电极 包括掺杂杂质的多晶硅层,半导体层上的栅极绝缘层和第一电容器电极,在其间具有栅极绝缘层的半导体层上的栅电极,以及在第一电容器电极上具有栅极绝缘的第二电容器电极 所述第二电容电极包括凸电极部分和凹电极部分,所述凹电极部分比所述凸电极部分和所述栅极电极都薄。
    • 3. 发明申请
    • Organic light emitting diode display and manufacturing method thereof
    • 有机发光二极管显示及其制造方法
    • US20110215335A1
    • 2011-09-08
    • US12929994
    • 2011-03-01
    • Oh-Seob KwonDeuk-Jong KimMoo-Soon Ko
    • Oh-Seob KwonDeuk-Jong KimMoo-Soon Ko
    • H01L33/18H01L33/38
    • H01L33/18H01L27/3265H01L33/38H01L2924/0002H01L2924/00
    • An organic light emitting diode display includes a substrate main body, a semiconductor layer and a first capacitor electrode on the substrate main body, bottom surfaces of the semiconductor layer and first capacitor electrode being substantially coplanar, and each of the semiconductor layer and first capacitor electrode including an impurity-doped polysilicon layer, a gate insulating layer on the semiconductor layer and the first capacitor electrode, a gate electrode on the semiconductor layer with the gate insulating layer therebetween, and a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, the second capacitor electrode including a convex electrode portion and a concave electrode portion, the concave electrode portion being thinner than each of the convex electrode portion and the gate electrode.
    • 有机发光二极管显示器包括在基板主体上的基板主体,半导体层和第一电容器电极,半导体层和第一电容器电极的底表面基本上共面,半导体层和第一电容器电极 包括掺杂杂质的多晶硅层,半导体层上的栅极绝缘层和第一电容器电极,在其间具有栅极绝缘层的半导体层上的栅电极,以及在第一电容器电极上具有栅极绝缘的第二电容器电极 所述第二电容电极包括凸电极部分和凹电极部分,所述凹电极部分比所述凸电极部分和所述栅极电极都薄。
    • 4. 发明申请
    • Organic light emitting diode display and method of manufacturing the same
    • 有机发光二极管显示器及其制造方法
    • US20110079786A1
    • 2011-04-07
    • US12662362
    • 2010-04-13
    • Oh-Seob KwonMoo-Soon Ko
    • Oh-Seob KwonMoo-Soon Ko
    • H01L51/52H01L51/56H01L29/94
    • H01L27/3262H01L27/1255H01L27/3265
    • An organic light emitting diode display includes a substrate, a semiconductor layer on the substrate, the semiconductor layer including an impurity-doped polycrystalline silicon layer, a first capacitor electrode on the substrate main body, the first capacitor electrode including an impurity-doped polycrystalline silicon layer, and bottom surfaces of the first capacitor electrode and semiconductor layer facing the substrate main body being substantially coplanar, a gate insulating layer on the semiconductor layer and the first capacitor electrode, a gate electrode on the semiconductor layer with the gate insulating layer therebetween, and a second capacitor electrode on the first capacitor electrode with the gate insulating layer therebetween, bottom surfaces of the second capacitor electrode and gate electrode facing the substrate main body being substantially coplanar, and the second capacitor electrode having a smaller thickness than the gate electrode.
    • 有机发光二极管显示器包括:基板,在基板上的半导体层,包括杂质掺杂多晶硅层的半导体层,在基板主体上的第一电容器电极,第一电容器电极,包括杂质掺杂多晶硅 第一电容器电极的层和底表面和基板主体的半导体层基本上共面;半导体层上的栅极绝缘层和第一电容器电极;半导体层上的栅极绝缘层之间的栅电极, 以及第一电容器电极上的第二电容器电极,其间具有栅极绝缘层,第二电容器电极和栅电极的面对基板主体的底表面基本上共面,并且第二电容器电极的厚度小于栅电极的厚度。
    • 6. 发明授权
    • Organic light emitting display apparatus and method of manufacturing the same
    • 有机发光显示装置及其制造方法
    • US08378349B2
    • 2013-02-19
    • US12902629
    • 2010-10-12
    • Moo-Soon KoJae-Ho YooGyoo-Chul Jo
    • Moo-Soon KoJae-Ho YooGyoo-Chul Jo
    • H01L21/00
    • H01L51/5265H01L27/3211H01L27/3246H01L51/5215H01L51/5218
    • An organic light emitting display apparatus and a method of manufacturing the same. The display apparatus includes first, second, and third sub-pixels formed on a substrate. The first sub-pixel includes a first pixel electrode, a first transmissive conductive layer formed on the first pixel electrode, a second transmissive conductive layer formed on the first transmissive conductive layer, a first organic light emitting layer formed on the second transmissive conductive layer, and a counter electrode formed on the first organic light emitting layer. The second sub-pixel includes a second pixel electrode, the first transmissive conductive layer formed on the second pixel electrode, a first protector covering an edge of the first transmissive conductive layer, a second organic light emitting layer electrically connected to the first transmissive conductive layer, and the counter electrode formed on the second organic light emitting layer. The third sub-pixel includes a third pixel electrode, a second protector covering an outer edge of the third pixel electrode, a third protector formed on the second protector, a third organic light emitting layer electrically connected to the third pixel electrode, and the counter electrode formed on the third organic light emitting layer.
    • 一种有机发光显示装置及其制造方法。 显示装置包括形成在基板上的第一,第二和第三子像素。 第一子像素包括第一像素电极,形成在第一像素电极上的第一透射导电层,形成在第一透射导电层上的第二透射导电层,形成在第二透射导电层上的第一有机发光层, 以及形成在第一有机发光层上的对电极。 第二子像素包括第二像素电极,形成在第二像素电极上的第一透射导电层,覆盖第一透射导电层的边缘的第一保护器,与第一透射导电层电连接的第二有机发光层 以及形成在第二有机发光层上的对电极。 第三子像素包括第三像素电极,覆盖第三像素电极的外边缘的第二保护器,形成在第二保护器上的第三保护器,与第三像素电极电连接的第三有机发光层, 电极,形成在第三有机发光层上。
    • 10. 发明授权
    • Manufacturing method for display device having a plurality of thin film transistors and display device formed thereby
    • 具有多个薄膜晶体管和由此形成的显示装置的显示装置的制造方法
    • US08647931B2
    • 2014-02-11
    • US13415759
    • 2012-03-08
    • Moo-Soon Ko
    • Moo-Soon Ko
    • H01L27/15
    • H01L27/1288H01L27/1255H01L27/127H01L27/3262H01L29/42384H01L29/78621
    • A manufacturing method of a thin film transistor includes: forming semiconductor layers for a plurality of thin film transistors over a substrate; forming an insulating layer covering the semiconductor layers; and forming a metal layer over the insulating layer. The method further includes: patterning the metal layer to form mask patterns; doping first ions using a first mask pattern among the mask patterns into a first semiconductor layer among the semiconductor layers to simultaneously form source region/a drain regions and an active region of the first thin film transistor; and doping second ions using a second mask pattern among the mask patterns into a second semiconductor layer among the semiconductor layers to form a source region and a drain region of the second thin film transistor.
    • 薄膜晶体管的制造方法包括:在基板上形成多个薄膜晶体管的半导体层; 形成覆盖半导体层的绝缘层; 以及在所述绝缘层上形成金属层。 该方法还包括:图案化金属层以形成掩模图案; 使用掩模图案中的第一掩模图案将第一离子掺杂到半导体层中的第一半导体层中,以同时形成第一薄膜晶体管的源极区/漏极区和有源区; 以及使用所述掩模图案中的第二掩模图案将所述第二离子掺杂到所述半导体层之间的第二半导体层中,以形成所述第二薄膜晶体管的源极区域和漏极区域。