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1. 发明授权

US09470951B2 Methods and devices for photonic M-ary pulse amplitude modulation 有权
标题翻译：用于光子M-ary脉冲幅度调制的方法和装置
公开(公告)号：US09470951B2
公开(公告)日：2016-10-18
申请号：US14879361
申请日：2015-10-09
申请人： Odile Liboiron-Ladouceur , Mohammad Shafiqul Hai , Monireh Moayedi Pour Fard
发明人： Odile Liboiron-Ladouceur , Mohammad Shafiqul Hai , Monireh Moayedi Pour Fard
IPC分类号： G02F1/035 , G02F1/225 , H04B10/516 , G02F1/21
CPC分类号： G02F1/225 , G02F2001/212 , H04B10/516
摘要： CMOS compatible SOI photonic integrated circuits (PICs) offer a low cost and promising solution to future short reach optical links operating beyond 100 Gb/s. A key building block in these optical links is the external optical modulator. Amongst, the PIC geometries for external modulators are those based upon ring resonators and Mach-Zehnder interferometers (MZI) where while the latter have been reported with increased thermal stability and fabrication tolerances, the former have demonstrated lower loss and lower driving voltages leading to a more energy efficient approach. Multi-segmented electrode structure based PAM optical modulator can potentially replace the analog digital-to-analog circuits (DACs) which are commonly used to achieve the multilevel electrical driving signal. Accordingly, it would be beneficial to combine the benefits of ring resonators to provide PAM-N modulators. It would be further beneficial for such PAM-N ring resonator modulators to exploit multi-segmented electrode structures to remove the requirements for high speed DACs.
摘要翻译： CMOS兼容的SOI光子集成电路（PIC）为超过100Gb / s的未来短距离光链路提供了低成本和有希望的解决方案。这些光链路中的关键构造块是外部光调制器。其中外部调制器的PIC几何形状是基于环形谐振器和马赫 - 策德尔干涉仪（MZI）的PIC几何形状，而后者已被报道具有增加的热稳定性和制造公差，前者已经表现出较低的损耗和较低的驱动电压，导致更节能的方法。基于多分段电极结构的PAM光调制器可以潜在地替代通常用于实现多电平电驱动信号的模拟数模转换电路（DAC）。因此，结合环形谐振器的优点来提供PAM-N调制器将是有益的。对于这种PAM-N环形谐振器调制器来说，利用多段电极结构来消除对高速DAC的要求将是更有益的。

2. 发明申请

US20160156999A1 METHODS AND SYSTEMS FOR BOARD LEVEL PHOTONIC BRIDGES 有权
标题翻译：板级光电桥的方法与系统
公开(公告)号：US20160156999A1
公开(公告)日：2016-06-02
申请号：US14955142
申请日：2015-12-01
申请人： Odile Liboiron-Ladouceur , Md. Shafiqul Hai , Monireh Moayedi Pour Fard , Chunshu Zhang , Meer Sakib
发明人： Odile Liboiron-Ladouceur , Md. Shafiqul Hai , Monireh Moayedi Pour Fard , Chunshu Zhang , Meer Sakib
IPC分类号： H04Q11/00 , H04B10/524
CPC分类号： H04Q11/0005 , H04B10/801 , H04Q2011/0016 , H04Q2011/0022 , H04Q2011/0028 , H04Q2011/0032 , H04Q2011/005
摘要： As photonics evolves closer and closer to the electronic processing elements in order to meet the demands of speed, latency of evolving data communications networks and data centres the inventors, rather than seeking direct monolithically integrated CMOS based processing photonic and electronic elements, have established a different route. Namely replace the computer hubs/electrical bridges interconnecting the multiple core logic chipset elements with a photonic bridge. In this manner high risk chip-to-chip photonic point-to-point links are replaced with photonic SOCs that leverage photonics bandwidth density attribute rather than its bandwidth distance attributes. An SOI based Electronic Embedded Photonic Switching Fabric is presented supporting, for example, N×MGb/s interconnections exploiting N channels of MGb/s wherein each channel of exploits S WDM channels of TGb/s. Embodiments of the invention also support high density optical interconnection via vertical grating couplers and multicore fibers.
摘要翻译：随着光子学越来越接近电子处理元件，为了满足速度的要求，不断发展的数据通信网络和数据中心的延迟，发明家们不是寻求直接单片集成的基于CMOS的处理光子和电子元件，而是建立了不同的路线。即更换将多个核心逻辑芯片组元件与光子桥连接的计算机集线器/电桥。以这种方式，高风险的芯片到芯片的光子点对点链路被利用光子带宽密度属性而不是其带宽距离属性的光子SOC代替。提出了一种基于SOI的电子嵌入式光子交换结构，其支持例如利用MGb / s的N个信道的N×MGb / s互连，其中每个信道利用S WDM信道的TGb / s。本发明的实施例还支持通过垂直光栅耦合器和多芯光纤的高密度光互连。

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