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    • 8. 发明申请
    • METHOD OF ETCHING A METAL LEAD FRAME
    • 蚀刻金属铅框架的方法
    • WO2017114564A1
    • 2017-07-06
    • PCT/EP2015/081355
    • 2015-12-29
    • OSRAM OPTO SEMICONDUCTORS GMBH
    • ITHNAIN, IsmailLIM, Choo KeanCHAN, Weng Heng
    • H01L21/48
    • H01L21/4828
    • A method of etching a metal lead frame for a semiconductor chip includes the application of an etching agent to a metal plate using a first and a second spray nozzle, which are located on opposite sides of the metal plate. The volumetric flow rate of the etching agent applied to the metal plate via the first spray nozzle is at least 10 % different from the volumetric flow rate of the etching agent applied to the metal plate via the second spray nozzle. A metal plate with an etching trench extending from a first side of the metal plate to a second side of the metal plate is disclosed. The etching trench comprises a first section and a second section, wherein a first side wall and a second side wall of the etching trench are basically perpendicular to the first side of the metal plate in the first section. A third side wall and a fourth side wall limit the etching trench within the second section. The first section of the etching trench extends from the first side of the metal plate to approximately one third of the thickness of the metal plate and the second section extends from the second side of the metal plate to approximately two thirds of the thickness of the metal plate. The first side of the metal plate adjoins the first side wall, which adjoins the third side wall, which adjoins the second side of the metal plate. The first side of the metal plate adjoins the second side wall, which adjoins the fourth side wall, which adjoins the second side of the metal plate. The third and fourth side wall are inclined compared to the first and second side wall in a way that the distance between the first and the second side wall is smaller than the distance between the third and the fourth side wall.
    • 蚀刻用于半导体芯片的金属引线框架的方法包括使用第一和第二喷嘴将蚀刻剂施加到金属板,所述第一和第二喷嘴位于金属板的相对侧上 。 通过第一喷嘴施加到金属板上的蚀刻剂的体积流量与通过第二喷嘴施加到金属板上的蚀刻剂的体积流量不同至少10%。 公开了一种具有从金属板的第一侧延伸到金属板的第二侧的蚀刻沟槽的金属板。 蚀刻沟槽包括第一部分和第二部分,其中蚀刻沟槽的第一侧壁和第二侧壁基本垂直于第一部分中的金属板的第一侧。 第三侧壁和第四侧壁将蚀刻沟槽限制在第二部分内。 蚀刻槽的第一部分从金属板的第一侧延伸到金属板厚度的约三分之一,并且第二部分从金属板的第二侧延伸到金属厚度的约三分之二 盘子。 金属板的第一侧邻接第一侧壁,第一侧壁邻接第三侧壁,邻接金属板的第二侧。 金属板的第一侧邻接与第四侧壁邻接的第二侧壁,第二侧壁邻接金属板的第二侧。 与第一和第二侧壁相比,第三和第四侧壁以第一和第二侧壁之间的距离小于第三和第四侧壁之间的距离的方式倾斜。