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1. 发明专利

JP2013070094A Thin film semiconductor chip 有权
标题翻译：薄膜半导体芯片
公开(公告)号：JP2013070094A
公开(公告)日：2013-04-18
申请号：JP2012279713
申请日：2012-12-21
申请人： Osram Opto Semiconductors Gmbh , オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semiconductors GmbH
发明人： HAHN BERTHOLD , HAERLE VOLKER , KAISER STEPHAN , PLOESSL ANDREAS
IPC分类号： H01L33/02 , H01L33/00 , H01L33/40
CPC分类号： H01L33/405 , H01L21/6835 , H01L21/78 , H01L23/3185 , H01L24/03 , H01L24/05 , H01L24/83 , H01L33/0079 , H01L33/0095 , H01L33/62 , H01L2221/6835 , H01L2221/68354 , H01L2221/68368 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/32014 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01023 , H01L2924/01025 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01068 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/12041 , H01L2924/00014 , H01L2924/3512 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a thin film light-emitting diode chip which allows easy later testing of a thin film semiconductor chip with small structure height at a wafer level and has small structure height and excellent mechanical stability.SOLUTION: A thin film semiconductor chip 1 comprises: an active layer body 2 suitable to formation of electromagnetic radiation; a conductive and reflective contact material layer 4 on the active layer body 2; and a support layer comprising a flexible conductive sheet 6 on the conductive and reflective contact layer 4, where the conductive sheet 6 is a carbon sheet.
摘要翻译：要解决的问题：提供一种薄膜发光二极管芯片，其可以容易地稍后测试晶片级具有小结构高度的薄膜半导体芯片，并且具有小的结构高度和优异的机械稳定性。解决方案：薄膜半导体芯片1包括：适于形成电磁辐射的有源层体2; 有源层主体2上的导电和反射接触材料层4; 以及支撑层，其包括在导电和反射接触层4上的柔性导电片6，其中导电片6是碳片。版权所有（C）2013，JPO＆INPIT

2. 发明专利

JP2004260178A Electric contact used for photoelectron semiconductor chip, and method for manufacturing the same 有权
公开(公告)号：JP2004260178A
公开(公告)日：2004-09-16
申请号：JP2004046959
申请日：2004-02-23
申请人： Osram Opto Semiconductors Gmbh , オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semiconductors GmbH
发明人： STEIN WILHELM , FEHRER MICHAEL , BAUR JOHANNES , WINTER MATTHIAS , PLOESSL ANDREAS , KAISER STEPHAN , HAHN BERTHOLD , EBERHARD FRANZ
IPC分类号： H01L33/32 , H01L33/40 , H01L33/00
CPC分类号： H01L33/40 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide an enhanced electric contact in a high reflection factor, excellent ohmic contact to a semiconductor, each other's excellent adhesion between layers which form excellent adhesion and contact on the semiconductor, good thermal stability, high stability to the environmental-impact factor, and soldering possibility and structuring possibility. SOLUTION: This electric contact of the photoelectron semiconductor chip 1 comprises a mirror layer 2 made of metal or metal alloy, a protective layer 3 for reducing the corrosion of the mirror layer 2, a barrier layer 4, an adhesion intermediate layer 5, and a solder layer 8. COPYRIGHT: (C)2004,JPO&NCIPI

3. 发明专利

JP2009260357A Optoelectronic semiconductor device and production process of the optoelectronic semiconductor device 审中-公开
标题翻译：光电半导体器件的制造和光电子半导体器件的生产过程
公开(公告)号：JP2009260357A
公开(公告)日：2009-11-05
申请号：JP2009099377
申请日：2009-04-15
申请人： Osram Opto Semiconductors Gmbh , オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semiconductors GmbH
发明人： EBERHARD FRANZ , HAHN BERTHOLD , KAISER STEPHAN , MAYER BERND
IPC分类号： H01S5/028 , H01L33/30 , H01L33/44
CPC分类号： H01L33/44 , H01L33/30 , H01S5/0281 , H01S5/0282 , H01S5/162 , H01S5/183 , H01S5/405
摘要： PROBLEM TO BE SOLVED: To realize an optoelectronic semiconductor device suitable for high optical output power. SOLUTION: The optoelectronic semiconductor device 1 consists of semiconductor crystal material containing at least one of gallium and aluminum substance, and the optoelectronic semiconductor device includes at least one optical active region 2 with its surface, on which at least one optical surface 3 is formed, and at least one boundary layer 4 formed in a position facing an optical surface 3 in the optical active region 2 and consisting of one up to ten layers of monomolecular layers, which contains sulfur or selenium. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：实现适用于高光输出功率的光电半导体器件。光电子半导体器件1由包含镓和铝物质中的至少一种的半导体晶体材料组成，并且光电子半导体器件包括至少一个具有其表面的光学有源区域2，至少一个光学表面3 形成有至少一个边界层4，该边界层4形成在与光学有源区域2中的光学表面3相对的位置中，并且由含有硫或硒的至多10层的单分子层构成。版权所有（C）2010，JPO＆INPIT

4. 发明专利

JP2004119983A Beam radiation semiconductor element 有权
标题翻译：光束辐射半导体元件
公开(公告)号：JP2004119983A
公开(公告)日：2004-04-15
申请号：JP2003336367
申请日：2003-09-26
申请人： Osram Opto Semiconductors Gmbh , オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semikonductors GmbH
发明人： BADER STEFAN , FEHRER MICHAEL , STEIN WILHELM , KAISER STEPHAN , HAERLE VOLKER DR , HAHN BERTHOLD
IPC分类号： H01L33/38 , H01L33/40 , H01L33/46 , H01S5/028 , H01S5/042 , H01S5/323 , H01L33/00
CPC分类号： H01L33/387 , H01L33/405 , H01L33/46
摘要： PROBLEM TO BE SOLVED: To provide an element of a beam radiating semiconductor element having a low contact resistance and is provided with a proper reflection characteristics for a beam formed in a component. SOLUTION: In order to form an electrical contact, it is so constituted that a structured contact layer is adhered on the surface of a semiconductor, a plurality of intervening spaces placed dispersedly over the contact layer are provided to form a free surface which is not covered by the contact layer on their surfaces, and the free surfaces are covered by a mirror part. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供具有低接触电阻的光束辐射半导体元件的元件，并且为形成在部件中的光束提供适当的反射特性。解决方案：为了形成电接触，其结构使得结构化接触层附着在半导体的表面上，分散放置在接触层上的多个中间空间被设置以形成自由表面，其表面上没有被接触层覆盖，并且自由表面被镜子部分覆盖。版权所有（C）2004，JPO

5. 发明专利

JP2004128507A Semiconductor chip for emitting electromagnetic beam and its manufacturing method 有权
标题翻译：用于发射电磁波束的半导体芯片及其制造方法
公开(公告)号：JP2004128507A
公开(公告)日：2004-04-22
申请号：JP2003341558
申请日：2003-09-30
申请人： Osram Opto Semiconductors Gmbh , オスラムオプトセミコンダクターズゲゼルシャフトミットベシュレンクテルハフツングOsram Opto Semikonductors GmbH
发明人： BADER STEFAN , EISERT DOMINIK , HAHN BERTHOLD , KAISER STEPHAN
IPC分类号： H01L33/20 , H01L33/46 , H01L33/00
CPC分类号： H01L33/20 , H01L33/46
摘要： PROBLEM TO BE SOLVED: To improve the efficiency for extracting the light, without incuring so much costs, from a semiconductor chip which includes a semiconductor layer stack 1 having an n-type conductive semiconductor layer 11, a p-type conductive semiconductor layer 13, and an electromagnetic beam producing region 12 between them and manufactured epitaxially; a supporting plate 50; and a mirror layer 40 located between them and to reflect the electromagnetic beam emitted from the semiconductor layer stack in the direction to the supporting plate. SOLUTION: The mirror layer has a plurality of flat reflecting partial surfaces 14 which are positioned to the main elongated surface of the beam producing region diagonally and at angles between 10° and 50° to the main elongated surface respectively. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题为了提高提取光的效率，不需要花费太多的代价，从包括具有n型导电半导体层11的半导体层堆叠1的半导体芯片，p型导电半导体层13，以及它们之间的电磁射束产生区域12，外延制造; 支撑板50; 以及位于它们之间的镜面层40，以将从半导体层堆叠发射的电磁波反射到支撑板的方向。解决方案：镜层具有多个平坦的反射部分表面14，它们分别定位在光束产生区域的主细长表面上，并且分别与主细长表面成10°至50°的角度。版权所有（C）2004，JPO

6. 发明专利

JP2003264130A METHOD OF MANUFACTURING EFFECTIVE LAYER INVOLVING AT LEAST ONE SEMICONDUCTOR LAYER 审中-公开
公开(公告)号：JP2003264130A
公开(公告)日：2003-09-19
申请号：JP2002366978
申请日：2002-12-18
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： PLOESSL ANDREAS , HAHN BERTHOLD , EISERT DOMINIK , KAISER STEPHAN
IPC分类号： H01L33/00 , H01L21/02 , H01L21/20
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing an effective layer (2) containing at least a semiconductor layer by separating the effective layer (2) from a carrier (1). SOLUTION: An effective layer (2) is formed on a carrier (1), a subsidiary carrier (3) is formed on the opposite side of the effective layer (2) to the carrier (1) with a bond layer (4), advantageously a bond layer (4) having a metal material at a bonding temperature, and the carrier (1) is mechanically peeled off at a temperature higher or equal to the bonding temperature of the bond layer but lower than the melting temperature whereby at least a part of the effective layer is peeled off, together with the subsidiary carrier layer (3). COPYRIGHT: (C)2003,JPO

7. 发明专利

JP2003234506A SEMICONDUCTOR DEVICE EMITTING RADIATION 审中-公开
公开(公告)号：JP2003234506A
公开(公告)日：2003-08-22
申请号：JP2003020947
申请日：2003-01-29
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： EISERT DOMINIK , KAISER STEPHAN , FEHRER MICHAEL , HAHN BERTHOLD , HAERLE VOLKER
IPC分类号： H01L33/38 , H01S5/183 , H01S5/323 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that uses a nitride-compound semiconductor as a base, has an improved contact metallizing section, and emits radiations. SOLUTION: In the semiconductor device that is equipped with a semiconductor body (1) having a nitride-compound semiconductor, arranges a contact metallizing section (3) on a surface (2) of the semiconductor body, and emits radiations, the contact metallizing section (3) can transmit radiations, and is at least partially covered with a conductive contact layer (4) that can transmit radiations. COPYRIGHT: (C)2003,JPO

8. 发明申请

WO2014048798A3 RING LIGHT MODULE AND METHOD FOR PRODUCING A RING LIGHT MODULE 审中-公开
标题翻译： RING光源模组及其制造方法环形灯模块
公开(公告)号：WO2014048798A3
公开(公告)日：2014-05-30
申请号：PCT/EP2013069274
申请日：2013-09-17
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： ALBRECHT TONY , SCHLERETH THOMAS , SCHULZ ROLAND , GÄRTNER CHRISTIAN , BESTELE MICHAEL , MARFELD JAN , KIRSCH MARKUS , KAISER STEPHAN
IPC分类号： F21V7/00 , F21K99/00 , F21V9/40 , F21V13/04 , F21Y101/02 , F21Y113/00
CPC分类号： F21V7/0008 , F21K9/62 , F21K9/64 , F21V7/048 , F21V13/04 , F21Y2103/33 , F21Y2113/13 , F21Y2115/10
摘要： In at least one embodiment, the ring light module (1) comprises a plurality of first and a plurality of second light-emitting optoelectronic semiconductor components (2), each having a main emission direction (20), wherein the first semiconductor components have a spectral emission which is different than that of the second semiconductor components. The ring light module (1) contains a reflector (3), which has a curved reflective surface (30). The semiconductor components (2) are fitted on a mount (4). The semiconductor components (2) are, when viewed in a plan view of the reflective surface (30), arranged in the form of a ring around the reflective surface (30) along an arrangement line (42). In a centre (44), the reflector (3) has a maximum height, in relation to a base side (40) of the ring light module (1). The centre (44) is located in a geometric centre of an inner face surrounded by the arrangement line (42). When viewed in a plan view of the reflective surface (30), the main emission directions (20) each point towards the centre (44) with a tolerance of at most 15°.
摘要翻译：在至少一个实施例中，环形光模块（1）包括多个第一和多个第二发光光电半导体部件（2）的每一个都具有一个主发光方向（20），其中所述第一半导体元件具有不同的第二半导体组件光谱发射。环形光模块（1）包括：（3）具有弯曲的反射表面（30）的反射器。上安装有半导体元件（2）的支撑件（4）。半导体部件（2）是，在平面图中看到的在反射表面（30），沿着装配线（42）环形地围绕所述反射表面（42）布置成围绕。在一个中心（44），反射器（3），以最大高度相对于所述环形发光模块的底侧（40）（1）。中心（44）位于封闭的内部空间中的装配线（42）中的一个的几何中心。在俯视观察到反射表面（30）朝向所述主发射方向（20），具有最大的每15°的向中心（44）有一个公差。

9. 发明申请

WO2014048797A3 RING LIGHT MODULE AND METHOD FOR PRODUCING A RING LIGHT MODULE 审中-公开
标题翻译： RING光源模组及其制造方法环形灯模块
公开(公告)号：WO2014048797A3
公开(公告)日：2014-05-30
申请号：PCT/EP2013069270
申请日：2013-09-17
申请人： OSRAM OPTO SEMICONDUCTORS GMBH
发明人： GÄRTNER CHRISTIAN , SCHLERETH THOMAS , SCHULZ ROLAND , SCHNEIDER ALBERT , KIRSCH MARKUS , ALBRECHT TONY , BESTELE MICHAEL , MARFELD JAN , KAISER STEPHAN
IPC分类号： F21V7/00 , F21K99/00 , F21V9/40 , F21Y101/02
CPC分类号： F21V7/0008 , F21K9/64 , F21Y2103/33 , F21Y2115/10
摘要： In at least one embodiment, the ring light module (1) comprises a plurality of light-emitting, optoelectronic semiconductor components (2), which each have a main emission direction (20). The ring light module (1) contains a reflector (3), which has a curved reflective surface (30). The semiconductor components (2) are fitted on a mount (4). The semiconductor components (2), when viewed in a plan view of the reflective surface (30), are arranged in the form of a ring around the reflective surface (30) along an arrangement line (42). In a centre (44), the reflector (3) has a maximum height, in relation to a base side (40) of the ring light module (1). The centre (44) is located in a geometrical centre of an inner face surrounded by the arrangement line (42). When viewed in a plan view of the reflective surface (30), the main emission directions (20) each point towards the centre (44) with a tolerance of at most 15°. The semiconductor components (2) are arranged densely along the arrangement line (42).
摘要翻译：在至少一个实施例中，环形光模块（1）包括多个发光光电半导体部件（2）的每一个都具有主发射方向（20）。环形光模块（1）包括：（3）具有弯曲的反射表面（30）的反射器。上安装有半导体元件（2）的支撑件（4）。半导体部件（2）是，在平面图中看到的在反射表面（30），沿着装配线（42）环形地围绕所述反射表面（42）布置成围绕。在一个中心（44），反射器（3），以最大高度相对于所述环形发光模块的底侧（40）（1）。中心（44）位于封闭的内部空间中的装配线（42）中的一个的几何中心。在俯视观察到反射表面（30）朝向所述主发射方向（20），具有最大的每15°的向中心（44）有一个公差。沿着装配线（42），所述半导体部件（2）高密度地配置。

10. 发明申请

WO2006012838A3 METHOD FOR PRODUCING SEMICONDUCTOR CHIPS USING THIN-FILM TECHNOLOGY AND A SEMICONDUCTOR CHIP PRODUCED USING THIN-FILM TECHNOLOGY 审中-公开
标题翻译：工艺用于制造薄膜技术及半导体芯片的半导体芯片薄膜技术
公开(公告)号：WO2006012838A3
公开(公告)日：2006-04-13
申请号：PCT/DE2005001276
申请日：2005-07-20
申请人： OSRAM OPTO SEMICONDUCTORS GMBH , HAHN BERTHOLD , HAERLE VOLKER , KAISER STEPHAN , PLOESSL ANDREAS
发明人： HAHN BERTHOLD , HAERLE VOLKER , KAISER STEPHAN , PLOESSL ANDREAS
IPC分类号： H01L33/00 , H01L33/40
CPC分类号： H01L33/405 , H01L21/6835 , H01L21/78 , H01L23/3185 , H01L24/03 , H01L24/05 , H01L24/83 , H01L33/0079 , H01L33/0095 , H01L33/62 , H01L2221/6835 , H01L2221/68354 , H01L2221/68368 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/32014 , H01L2224/83801 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/0102 , H01L2924/01023 , H01L2924/01025 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01068 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12036 , H01L2924/12041 , H01L2924/00014 , H01L2924/3512 , H01L2924/00
摘要： The invention relates to the production of semiconductor chips (1) using thin-film technology, in which a sequence of active layers is applied to a growth substrate (3) and a structured reflective electrically conductive contact material layer (4) is subsequently configured on said sequence of layers. The sequence of active layers is then structured to form active stacks (2) of layers, in such a way that a reflective electrically conductive contact material layer (4) is present on each active stack (2) of layers. A flexible electrically conductive film (6) is then applied to the contact material layers (4) to act as an auxiliary carrier layer and the growth substrate is removed.
摘要翻译：为生产在薄膜技术的半导体芯片（1）的有源层序列施加（3）形成在反射然后结构化的导电接触材料层（4）上在生长衬底上。然后，对于活性层堆叠有源层序列（2）被构造成使得每个有源层堆叠（2）上的反射导电接触材料层（4）。柔性导电膜（6）上材料的接触层（4）然后施加和生长衬底作为辅助载体层除去。

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