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1. 发明专利

CA1285641C AN IC CARD WITH A SOLAR BATTERY 未知
公开(公告)号：CA1285641C
公开(公告)日：1991-07-02
申请号：CA571890
申请日：1988-07-13
申请人： OKI ELECTRIC IND CO LTD , TOA NENRYO KOGYO KK
发明人： OHTA SATOSHI , TANAGAWA KOUZI , YAMAMOTO HIDEO , KUMAGAI KEIJI
IPC分类号： G06K19/07 , G06K19/077 , H01L31/075 , G06K19/06 , H01L31/04 , H01L31/06
摘要： TITLE OF THE INVENTION An IC card with a solar battery An IC card having a plastics card body which mounts a CPU, a RAM, a ROM, a solar battery mounts also an EEPROM (electrically erasable programmable read only memory), which is used for identification of a card owner, Due to high power consumption of said EEPROM, a tandem type solar battery in which a plurality of opto-electric conversion cells are laminated on a substrate is used. The present IC card can operate with only the solar battery mounted inside of the IC card, and has no secondary battery.

2. 发明专利

JPH01118497A IC CARD WITH SOLAR CELL 失效
公开(公告)号：JPH01118497A
公开(公告)日：1989-05-10
申请号：JP17309988
申请日：1988-07-12
申请人： OKI ELECTRIC IND CO LTD , TOA NENRYO KOGYO KK
发明人： OTA SATORU , TANAGAWA KOJI , YAMAMOTO HIDEO , KUMAGAI KEIJI
IPC分类号： G06K19/07 , B42D15/02 , B42D15/10 , G06K19/00 , H01L31/04
摘要： PURPOSE: To enable reduction of formation area of a solar battery and to enhance operability and a display function by arranging a photoelectric energy conversion layer formed of three layers consisting of a p-type layer, an i-type layer and an n-type layer in the solar battery and providing a power transfer means, which is changed over to the solar battery or the mains in accordance with voltage value on an external ready access type terminal, in the inside of an integrated circuit. CONSTITUTION: A solar battery 24 is provided with a substrate 30 constituting an electrode of one hand. A photoelectric energy conversion layer formed of three layers, which consist of a p-type later consisting of a-Si:C:H or a-Si:N:H:, an i-type later consisting of a-Si:H and an n-type layer consisting of microcrystal Si:H, is laminated on the substrate 30. Furthermore, a transparent electrode 34 constituting the other electrode is fitted thereon and a protective resist 35 is respectively fitted on the electrode 36. An IC 26 provided in the inside of a card 21 is equipped with a CPU having an operation function, a switch circuit changing over an internal power source and an external power source and a voltage detection circuit. Further, a power transfer means is constituted of the voltage detection circuit and a switch circuit.

3. 发明公开

EP0062079A4 THIN SILICON FILM AND PROCESS FOR PREPARING SAME. 失效
标题翻译：用于其薄膜硅和方法。
公开(公告)号：EP0062079A4
公开(公告)日：1984-02-16
申请号：EP81902820
申请日：1981-10-15
申请人： AGENCY IND SCIENCE TECHN , TOA NENRYO KOGYO KK
发明人： IIJIMA SHIGERU ELECTR LAB AGEN , TANAKA KAZUNOBU ELECTR LAB AGE , MATSUDA AKIHISA ELECTR LAB AGE , MATSUMURA MITSUO , YAMAMOTO HIDEO
IPC分类号： C01B33/02 , C23C16/24 , H01L21/205 , H01L29/04 , H01L29/167 , H01L31/04 , H01L31/20
CPC分类号： H01L29/04 , C23C16/24 , H01L21/02422 , H01L21/02532 , H01L21/02579 , H01L21/02592 , H01L21/0262 , H01L29/167 , H01L31/202 , Y02E10/50 , Y02P70/521 , Y10T428/12528

4. 发明专利

DE3175268D1 THIN SILICON FILM AND PROCESS FOR PREPARING SAME 未知
公开(公告)号：DE3175268D1
公开(公告)日：1986-10-09
申请号：DE3175268
申请日：1981-10-15
申请人： STATE OF JAPAN AS REPRESENTED , TOA NENRYO KOGYO KK
发明人： IIJIMA SHIGERU ELECTR LAB , TANAKA KAZUNOBU ELECTR LAB , MATSUDA AKIHISA ELECTR LAB , MATSUMURA MITSUO , YAMAMOTO HIDEO
IPC分类号： H01L21/205 , H01L31/04

5. 发明专利

CA1236933A AMORPHOUS SEMICONDUCTOR DEVICE AND METHOD AND APPARATUS FOR PRODUCING THE SAME 未知
公开(公告)号：CA1236933A
公开(公告)日：1988-05-17
申请号：CA468353
申请日：1984-11-21
申请人： TOA NENRYO KOGYO KK
发明人： MATSUMURA MITSUO , YAMAMOTO HIDEO , FUKUI KEITARO , YOSHIDA TOSHIHIKO , OKAYASU YOSHINOBU , ASAI KUNIO , NAKAMURA OSAMU
IPC分类号： H01L21/383 , H01L29/36
摘要： 12 This invention discloses a new semiconductor Device having no step p-i-n junctions but has graded p-i-n junction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily in good reproducibility by plasma discharge method, it is especially suited for use as a solar battery. An apparatus for the production of said semiconductor Device is also disclosed.

6. 发明专利

CA1255194A AMORPHOUS SILICON SEMICONDUCTOR FILM AND PRODUCTION PROCESS THEREOF 未知
公开(公告)号：CA1255194A
公开(公告)日：1989-06-06
申请号：CA465300
申请日：1984-10-12
申请人： TOA NENRYO KOGYO KK
发明人： YOSHIDA TOSHIHIKO , MATSUMURA MITSUO , YAMAMOTO HIDEO , ASAI KUNIO , NAKAMURA OSAMU , OKAYASU YOSHINOBU
IPC分类号： H01L31/06
摘要： 13 This invention disclose an amorphous silicon semiconductor film containing at least hydrogen, carbon and oxygen as impurities and the method to produce it. The film is characterized in that the total quantity of carbon and oxygen in said film is at least 0.1 atom %. Since the film has small light absorption coefficient and its optical refractive index is controllable, an excellent window material for solar cell can be provided. As an adherence of the film with metal electrode as well as with transparent electrode is sufficient, the good reproducibility in making solar cell using the film of this invention as window material was realized.

7. 发明专利

CA1175583A SILICON THIN FILM AND METHOD OF PRODUCING THE SAME 未知
公开(公告)号：CA1175583A
公开(公告)日：1984-10-02
申请号：CA387901
申请日：1981-10-14
申请人： AGENCY IND SCIENCE TECHN , TOA NENRYO KOGYO KK
发明人： IIJIMA SHIGERU , TANAKA KAZUNOBU , MATSUDA AKIHISA , MATSUMURA MITSUO , YAMAMOTO HIDEO
IPC分类号： C01B33/02 , C23C16/24 , H01L21/205 , H01L29/04 , H01L29/167 , H01L31/04 , H01L31/20 , H01L21/20
摘要： Silicon thin film is composed of primarily silicon atoms, at least one element selected from a group including fluorine, chlorine, bromine, iodine and hydrogen, and impurity element, wherein microcrystalline grains are interspersed in the amorphous layer. The thin film is produced by a method of producing a silicon thin film on a substrate under the plasma atmosphere using as a raw material any one of silane (SiH4) or halogenated silane (SiH0-3X4-1) wherein X represents halogen element, or a combination of two or more thereof, and a dopant gas mixed with the raw material. The method comprises steps of; diluting said mixed gas with rare gas such as helium, neon, argon, etc. or hydrogen in a ratio of the diluting gas to the mixed gas higher than 1:1 in order to control the film forming rate adequately enough to produce a layer including mixed crystalline and amorphous substances; and applying an electric power of a plasma discharge power density higher than about 0.2 W/cm2.

8. 发明专利

JPS63126214A MANUFACTURE OF SILICON THIN FILM 失效
公开(公告)号：JPS63126214A
公开(公告)日：1988-05-30
申请号：JP12356187
申请日：1987-05-20
申请人： AGENCY IND SCIENCE TECHN , TOA NENRYO KOGYO KK
发明人： IIJIMA SHIGERU , TANAKA KAZUNOBU , OGUSHI HIDEYO , MATSUDA AKIHISA , MATSUMURA MITSUO , YAMAMOTO HIDEO
IPC分类号： H01L31/04 , H01L21/205
摘要： PURPOSE:To obtain a silicon thin film containing fluorine and hydrogen in a highly efficient manner by a method wherein, using SiF4-SiH4 mixed gas, fluorine and hydrogen are introduced while the film is being formed by maintaining electric discharge stably at low gas pressure and low power density. CONSTITUTION:The entire device including a mixing container 1 is evacuated to the degree of vacuum of 10 torr using an oil-sealed rotary vacuum pump 2 and an oil diffusion pump 3. Gas is introduced into the container 1 at the prescribed rate from an SiF4 cylinder 4 and an SiH4 cylinder 5, and the gas is mixed. The mixed gas is introduced into a vacuum container 9 at a constant flow rate through a flow meter 8. The necessary pressure is maintained while the degree of vacuum inside the container 9 is being monitored using a vacuum gauge 11 by operating a main valve 10. Voltage is applied between electrodes 13 and 13' by a high frequency oscillator 12 and a glow discharge is performed as a result, a silicon thin film containing fluorine and hydrogen is formed on a substrate 15.

9. 发明专利

JPS6031222A AMORPHOUS SILICON SEMICONDUCTOR THIN FILM AND MANUFACTURE OF THE SAME 失效
公开(公告)号：JPS6031222A
公开(公告)日：1985-02-18
申请号：JP13907383
申请日：1983-07-29
申请人： TOA NENRYO KOGYO KK
发明人： YOSHIDA TOSHIHIKO , MATSUMURA MITSUO , YAMAMOTO HIDEO , ASAI KUNIO , NAKAMURA OSAMU , OKAYASU YOSHINORI
IPC分类号： H01L31/04 , H01L21/205 , H01L31/0248
摘要： PURPOSE:To reduce a light absorption coefficient of a semiconductor by a method wherein the total content of carbon and oxygen, contained in an amorphous silicon semiconductor thin film which contains hydrogen, carbon and oxygen as impurities, is selected to be not less than 0.1atom%. CONSTITUTION:Gases are mixed, for instance, with such proportions as CO/ SiH4=0.7, B2H6/SiH4=0.01 and CO/H2=2.33. A film is formed by glow discharge decomposition of the mixture gas under a prescribed condition and the total content of carbon and oxygen in the film is selected to be not less than 0.1atom%. The P type a-Si:H:C:O thin film has small light absorption coefficients at various wavelengths.

10. 发明专利

JPS6477181A MULTILAYER-STRUCTURED SOLAR BATTERY 失效
公开(公告)号：JPS6477181A
公开(公告)日：1989-03-23
申请号：JP15003688
申请日：1988-06-20
申请人： TOA NENRYO KOGYO KK
发明人： KUMAGAI KEIJI , YAMAMOTO HIDEO
IPC分类号： H01L31/04
摘要： PURPOSE:To improve light absorption efficiency without voltage being reduced, by employing a structure in which each of optoelectric transducers is formed in a three layer structure consisting of a p layer, an i layer and an n layer, the nearer optoelectric transducer is disposed a lower electrode, the thicker the i layer thereof is, and the band gaps of the respective i layers of the optoelectric transducers are continuously decreased from the optoelectric transducer on the side of an upper transference electrode to the optoelectric transducer on the side of the lower electrode. CONSTITUTION:A solar battery 100 has a lower electrode 2 as a substrate, a first optoelectric transducer 20 is formed on the lower electrode 2, and second and third optoelectric transducers 30, 40 are in turn formed on the first optoelectric transducer 20. Each the optoelectric transducer 20 (30, 40) is made to a three layer structure consisting of a p layer 22 (32, 42), an i layer 24 (34, 44), and an n layer 26 (36, 46). The respective i layers of the optoelectric transducers are made to gradually thicken from the third optoelectric transducer 40 on the side of an upper transference electrode to the first optoelectric transducer 20. Moreover, the band gaps of the respective i layers of the optoelectric transducers are made to be continuously decreased from the third optoelectric transducer 40 on the side of the upper transference electrode to the first optoelectric transducer 20. Therefore, the light absorption efficiency can be enhanced, and photoelectric current can be increased.

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