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    • 7. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPH06112405A
    • 1994-04-22
    • JP25825092
    • 1992-09-28
    • FUJITSU LTD
    • WATAI TAKAHIROFUNAKI TETSUJITANAKA HIROKAZU
    • H01L27/04H01L21/822
    • PURPOSE:To transmit a signal without attenuation by a method wherein the same signal is given to the electrode to be connected to a reverse conductive type semiconductor layer and the electrode to be connected to one-conductivity type semiconductor region. CONSTITUTION:CM is the M0S capacitor part which becomes the main capacitor part in the MOS structure consisting of a metal-side electrode 10, an insulating layer 7 and a p-type diffusion layer 6. CS1 is a parasitic capacitor part consisting of a p-n junction capacitor which is generated between the p-type diffusion layer 6 and an n-type epitaxial layer 3, and CS2 is a parasitic capacitor part consisting of a p-n junction capacitor of the conductivity type opposite to that of the CS1 generating between an n type buried diffusion layer 2 and a p-type substrate l. When the same signal is given to A and B terminals, no current is allowed to flow on the capacitor CS1, because the voltage added to both ends of the capacitor CS1 is not changed. As a result, the signal given to the B terminal is transmitted to the C terminal. Accordingly, the C terminal is not subjected to the parasitic effect of parasitic capacitor against the substrate.
    • 8. 发明专利
    • SEMICONDUCTOR INTEGRATED CIRCUIT
    • JPH04129409A
    • 1992-04-30
    • JP25252190
    • 1990-09-20
    • FUJITSU LTD
    • TANAKA HIROKAZUFUNAKI TETSUJIHAYAKAWA ATSUSHI
    • H03F1/30H03F3/34H03F3/347H03F3/45
    • PURPOSE:To increase the operating speed of the signal processing circuit by using a heat element so as to control the electric characteristic of a semiconductor element apart from the heat element. CONSTITUTION:The signal processing circuit 1 is provided with a semiconductor element 2 having an electric characteristic in response to temperature and a heat element 3 is provided close to the semiconductor element 2 and generates or absorbs a heat in response to a supply current. Then a control circuit 4 supplies a current in response to an input signal or an output signal of the signal processing circuit 1 or a current in response to an external signal of the signal processing circuit 1 to change the characteristic of the signal processing circuit 1 to a desired characteristic. That is, since the heat element 3 controls the electric characteristic of the semiconductor element 2 apart from the heat element 3, it is not required to connect the heat element 3 to the input terminal and the output terminal of the signal processing circuit 1 to decrease the capacity of the signal processing circuit 1. Thus, the operating speed of the signal processing circuit 1 is quickened.
    • 9. 发明专利
    • SIGNAL TRANSMITTER
    • JPH0332137A
    • 1991-02-12
    • JP16572189
    • 1989-06-28
    • FUJITSU LTD
    • TANAKA HIROKAZUFUNAKI TETSUJIUMEDA SADAMI
    • H03K5/125H03K5/01H04L25/02H04L25/03
    • PURPOSE:To avoid a change in the duty ratio and the effect of a load connecting to the post-stage of the circuit without increase in power consumption and the necessity of a high speed device by transmitting signal corresponding to the duty ratio of the transmission signal in the level edge of the output of a flip-flop circuit. CONSTITUTION:A digital circuit 1 generates signals Q1, and Q1 in response to the level edge of an input signal and they are sent to a reception side via a signal transmission circuit 3, a flip-flop circuit 2 is set by the signal Q1 and reset by signal Q1 and a signal Q2 is outputted. In this case, the signal Q2 rises in coincident with the rising timing of the signal Q1 and falls in coincidence with the rising timing of the signal Q1. Thus, the transmission of the signal Q2 having the same duty rate as that of the input signal being the transmission signal is attained. Thus, the increase in the circuit power consumption and the high speed device are not required and the effect of the load connecting to the post-stage of the circuit is not given on the duty ratio in the digital signal transmission.