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    • 2. 发明申请
    • METHOD FOR MANUFACTURING A MULTILAYER OF A TRANSPARENT CONDUCTIVE OXIDE
    • 用于制造透明导电氧化物的多层的方法
    • WO2012098052A1
    • 2012-07-26
    • PCT/EP2012/050479
    • 2012-01-13
    • OERLIKON SOLAR AG, TRUEBBACHLOSIO, PaoloCAGLAR, OnurRECHTSTEINER, PeterCARROY, PerrineCHRIST, Holger
    • LOSIO, PaoloCAGLAR, OnurRECHTSTEINER, PeterCARROY, PerrineCHRIST, Holger
    • H01L31/0224H01L31/18
    • H01L31/022483H01L31/076H01L31/1884Y02E10/548
    • The present application relates to a multi-part transparent conductive zinc oxide layer for a photoelectric conversion device, and a method of producing the same. The transparent conductive zinc oxide layer comprises at least one basic layer sequence with varying boron doped and concentration, said basic layer sequence comprising a thinner transparent conductive zinc oxide higher-boron-doped layer (72; 74) and a thicker transparent conductive zinc oxide lower-boron-doped layer (73; 75). Inventively, the doping density through each individual conductive zinc oxide layer (72, 73; 74, 75) is substantially constant, which is achieved by intentionally doping the thicker transparent conductive zinc oxide lower-boron-doped layer (73; 75). Optionally, an interlayer may be present between the at least one basic layer sequence and the substrate (71) or n-doped silicon layer (46) upon which it is disposed. This has the advantage of permitting efficient Edge Isolation by Laser EIL ablation of the transparent conductive zinc oxide layers while maintaining good electrical and optical properties in said layers.
    • 本申请涉及一种用于光电转换装置的多部分透明导电氧化锌层及其制造方法。 透明导电氧化锌层包括至少一个具有变化的硼掺杂和浓度的碱性层序列,所述碱性层序列包括较薄的透明导电氧化锌高硼掺杂层(72; 74)和较厚的透明导电氧化锌较低 硼掺杂层(73; 75)。 本发明通过每个单独的导电氧化锌层(72,73,74,75)的掺杂密度基本上是恒定的,这是通过有意掺杂较厚的透明导电氧化锌低硼掺杂层(73; 75)来实现的。 任选地,中间层可以存在于至少一个碱性层序列与其所配置的衬底(71)或n掺杂硅层(46)之间。 这具有允许通过激光EIL消除透明导电氧化锌层的有效边缘隔离,同时在所述层中保持良好的电气和光学性质的优点。