专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07319711B2 Light-emitting device and light-emitting device array using a whispering gallery mode, and method for manufacturing same 失效
标题翻译：发光装置和使用耳语画廊模式的发光装置阵列及其制造方法
公开(公告)号：US07319711B2
公开(公告)日：2008-01-15
申请号：US11250344
申请日：2005-10-17
申请人： O'Dae Kwon , Moojin Kim , Sung Jae An , Seungeun Lee , Dongkwon Kim
发明人： O'Dae Kwon , Moojin Kim , Sung Jae An , Seungeun Lee , Dongkwon Kim
IPC分类号： H01S3/08
CPC分类号： H01S5/1075 , B82Y20/00 , H01L33/105 , H01S5/0425 , H01S5/1096 , H01S5/18308 , H01S5/2081 , H01S5/34313 , H01S5/423 , H01S2301/176
摘要： A light-emitting device is capable of oscillating in a convex-whispering gallery mode. The lighting-emitting device includes a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by an epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed thereon, and an electrode connected to a region around the hole for applying a current to the hole. Further disclosed are a method for manufacturing the light-emitting device and an array of light-emitting devices.
摘要翻译：发光装置能够以凸耳式画廊模式振荡。该发光装置包括：PIN型半导体，其包括通过外延生长形成在衬底上的p型分布式布拉格反射器，有源区和n型分布式布拉格反射器，其中PIN型半导体具有孔形成在其上的预定直径，以及连接到孔附近的用于向孔施加电流的电极的电极。进一步公开了一种制造发光器件和发光器件阵列的方法。

2. 发明申请

US20070090338A1 Light-emitting device and light-emitting device array using a whispering gallery mode, and method for manufacturing same 失效
标题翻译：发光装置和使用耳语画廊模式的发光装置阵列及其制造方法
公开(公告)号：US20070090338A1
公开(公告)日：2007-04-26
申请号：US11250344
申请日：2005-10-17
申请人： O'Dae Kwon , Moojin Kim , Sung-Jae An , Seungeun Lee , Dongkwon Kim
发明人： O'Dae Kwon , Moojin Kim , Sung-Jae An , Seungeun Lee , Dongkwon Kim
IPC分类号： H01L29/06 , H01L31/00 , H01L33/00 , H01L29/22
CPC分类号： H01S5/1075 , B82Y20/00 , H01L33/105 , H01S5/0425 , H01S5/1096 , H01S5/18308 , H01S5/2081 , H01S5/34313 , H01S5/423 , H01S2301/176
摘要： A light-emitting device is capable of oscillating in a convex-whispering gallery mode. The lighting-emitting device includes a PIN-type semiconductor including a p-type distributed Bragg reflector, an active region and an n-type distributed Bragg reflector formed on a substrate by an epitaxial growth, wherein the PIN-type semiconductor having a hole with a predetermined diameter formed thereon, and an electrode connected to a region around the hole for applying a current to the hole. Further disclosed are a method for manufacturing the light-emitting device and an array of light-emitting devices.
摘要翻译：发光装置能够以凸耳式画廊模式振荡。该发光装置包括：PIN型半导体，其包括通过外延生长形成在衬底上的p型分布式布拉格反射器，有源区和n型分布式布拉格反射器，其中PIN型半导体具有孔形成在其上的预定直径，以及连接到孔附近的用于向孔施加电流的电极的电极。进一步公开了一种制造发光器件和发光器件阵列的方法。

3. 发明申请

US20070081569A1 Photonic quantum ring laser for low power consumption display device 审中-公开
标题翻译：光子量子环激光器用于低功耗显示设备
公开(公告)号：US20070081569A1
公开(公告)日：2007-04-12
申请号：US10578619
申请日：2005-03-23
申请人： O'Dae Kwon , Joongwoo Bae , Sung-Jae An , Dongkwon Kim
发明人： O'Dae Kwon , Joongwoo Bae , Sung-Jae An , Dongkwon Kim
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/1075 , H01S5/18358 , H01S5/341 , H01S5/3432
摘要： A three-dimensional (3D) photonic quantum ring (PQR) laser for a low power consumption display, wherein the PQR laser has a sufficient small radius to adjust an inter-mode spacing (IMS) of oscillation modes discretely multi-wavelength-oscillating in an envelope wavelength range within the gain profile of a given semiconductor material of the PQR laser so that the IMS has a maximal value and the number of the oscillation modes is minimized. The PQR laser exhibits multi-wavelength oscillation characteristics according to a 3D toroidal cavity structure, and is designed to exhibit a threshold current lower than those of LEDs and to have multi-wavelength modes in an envelope wavelength range of several nm to several tens of nm. The PQR laser consumes reduced power while maintaining desired color and high brightness equal to those of the LEDs, through an adjustment of the multi-wavelength oscillation characteristics and IMS of the PQR laser.
摘要翻译：一种用于低功耗显示器的三维（3D）光子量子环（PQR）激光器，其中PQR激光器具有足够小的半径以调节离散地多波长振荡的振荡模式的模间距离（IMS）在PQR激光器的给定半导体材料的增益分布内的包络波长范围，使得IMS具有最大值，并且振荡模式的数量被最小化。 PQR激光器根据3D环形腔结构显示出多波长振荡特性，并且被设计为表现出低于LED的阈值电流，并且在几nm至几十nm的包络波长范围内具有多波长模式。通过调整PQR激光器的多波长振荡特性和IMS，PQR激光器通过调整多波长振荡特性和IMS来消耗功率，同时保持与LED的相同的期望的颜色和高亮度。

4. 发明申请

US20050230697A1 Hyperboloid-drum structures and method of fabrication of the same using ion beam etching 审中-公开
标题翻译：双曲面鼓结构及其制造方法使用离子束蚀刻
公开(公告)号：US20050230697A1
公开(公告)日：2005-10-20
申请号：US11078227
申请日：2005-03-11
申请人： O'Dae Kwon , Jun-Youn Kim , Sung-Jae An
发明人： O'Dae Kwon , Jun-Youn Kim , Sung-Jae An
IPC分类号： H01L21/3065 , H01L29/06 , H01L29/22 , H01L31/0336 , H01S5/183 , H01S5/20 , H01S5/30 , H01S5/34 , H01S5/343 , H01L33/00
CPC分类号： B82Y20/00 , H01L29/0657 , H01L33/105 , H01L33/20 , H01S5/18344 , H01S5/18352 , H01S5/2086 , H01S5/3412 , H01S5/3432 , H01S2301/176
摘要： The present invention relates to a method of mass fabricating a hyperboloid-drum element which is uniform in size and with the diameter of an active layer (active region or gain medium) ranging from tens of nm to less than a few μm, and to an element fabricated thereby. According to the present invention, the fabrication method of the hyperboloid-drum element comprises forming an epitaxial layer which includes an n-type semiconductor joined with a p-type semiconductor on a substrate and an active region near a border region and a boundary between the n-type semiconductor and the p-type semiconductor; and etching the epitaxial layer into a shape of the hyperboloid-drum having the minimum diameter at the active region by an ion-beam etching method. The hyperboloid-drum element fabricated in accordance with the present invention has advantages of uniformity in size and good reproducibility.
摘要翻译：本发明涉及一种大体积制造双组织鼓元件的方法，所述双曲面鼓元件的尺寸是均匀的，并且具有几十纳米到小于几毫米的有源层（有源区或增益介质）的直径，由此制造的元件。根据本发明，双曲面鼓元件的制造方法包括形成外延层，该外延层包括在基板上与p型半导体结合的n型半导体和边界区域附近的有源区域以及 n型半导体和p型半导体; 并且通过离子束蚀刻方法将外延层蚀刻成在有源区具有最小直径的双曲面滚筒的形状。根据本发明制造的双曲面鼓元件具有尺寸均匀性和良好重现性的优点。

5. 发明申请

US20080138017A1 Butt coupling structure and method of photonic quantum ring hole emitter 有权
标题翻译：光子量子环发射体的对接耦合结构和方法
公开(公告)号：US20080138017A1
公开(公告)日：2008-06-12
申请号：US12068687
申请日：2008-02-11
申请人： O'Dae Kwon , Seungeun Lee
发明人： O'Dae Kwon , Seungeun Lee
IPC分类号： G02B6/36
CPC分类号： G02B6/4212 , G02B6/4202
摘要： An optical coupling structure includes a PQR hole emitter having a PQR hole, and an optical fiber whose one side is tapered into the PQR hole. An index-matching solution such as a photo-resist or a photo-resist diluted solution is injected into the PQR hole to adhere the optical fiber and the PQR hole.
摘要翻译：光耦合结构包括具有PQR孔的PQR空穴发射器和一侧锥形成PQR孔的光纤。将光学抗蚀剂或光致抗蚀剂稀释溶液的折射率匹配溶液注入到PQR孔中以粘附光纤和PQR孔。

6. 发明授权

US07520681B2 Butt coupling structure and method of photonic quantum ring hole emitter 有权
标题翻译：光子量子环发射体的对接耦合结构和方法
公开(公告)号：US07520681B2
公开(公告)日：2009-04-21
申请号：US12068687
申请日：2008-02-11
申请人： O'Dae Kwon , Seungeun Lee
发明人： O'Dae Kwon , Seungeun Lee
IPC分类号： G02B6/36 , G02B6/12 , G02B6/42 , H01S3/083
CPC分类号： G02B6/4212 , G02B6/4202
摘要： An optical coupling structure includes a PQR hole emitter having a PQR hole, and an optical fiber whose one side is tapered into the PQR hole. An index-matching solution such as a photo-resist or a photo-resist diluted solution is injected into the PQR hole to adhere the optical fiber and the PQR hole.
摘要翻译：光耦合结构包括具有PQR孔的PQR空穴发射器和一侧锥形成PQR孔的光纤。将光学抗蚀剂或光致抗蚀剂稀释溶液的折射率匹配溶液注入到PQR孔中以粘附光纤和PQR孔。

7. 发明授权

US4824587A Composites of coercive particles and superparamagnetic particles 失效
标题翻译：矫顽颗粒和超顺磁性颗粒的复合材料
公开(公告)号：US4824587A
公开(公告)日：1989-04-25
申请号：US712821
申请日：1985-03-18
申请人： O'Dae Kwon , Jitka Solc
发明人： O'Dae Kwon , Jitka Solc
IPC分类号： H01F1/00 , H01F1/37 , H01F1/44 , H01F1/26 , H01F1/28
CPC分类号： B82Y25/00 , H01F1/0054 , H01F1/0063 , H01F1/37 , H01F1/44
摘要： Composites of coercive particles and superparamagnetic particles comprise an intimate admixture of said particles in a dielectric matrix. The particles are admixed in such a fashion as to provide a composite which exhibits a coercivity which behaves as if the coercive particles and the superparamagnetic particles interact. Composites exhibiting such controlled coercivity are useful in the manufacture of transformers, magnets and magnetic tapes.
摘要翻译：矫顽颗粒和超顺磁性颗粒的复合材料包括所述颗粒在电介质基体中的紧密混合物。颗粒以这样的方式混合，以提供显示矫顽力的复合材料，其矫顽力如同矫顽颗粒和超顺磁性颗粒相互作用一样。展示这种受控矫顽力的复合材料可用于制造变压器，磁铁和磁带。

8. 发明授权

US06803852B2 Sensor for preventing automobile crashes by using photonic quantum ring laser array 失效
标题翻译：用于通过使用光子量子环激光器阵列来防止汽车碰撞的传感器
公开(公告)号：US06803852B2
公开(公告)日：2004-10-12
申请号：US10147077
申请日：2002-05-17
申请人： O'Dae Kwon , Byeong-hoon Park
发明人： O'Dae Kwon , Byeong-hoon Park
IPC分类号： B60Q100
CPC分类号： H01S5/1071 , G01S7/484 , G01S17/42 , G01S17/936 , H01S3/094015 , H01S5/183 , H01S5/423
摘要： A sensor prevents automobile crashes by collecting information such as a distance between automobiles, speed, and acceleration by utilizing a phenomenon that a photonic quantum ring laser emits light rays having different wavelengths associated with varying angles of the radiation from the photonic quantum ring. The sensor for preventing automobile crashes includes a photonic quantum ring laser array emitting lasing light beams having different wavelengths according to the view angle, a reflection unit for reflecting the light beams oscillated from the photonic quantum ring laser array, and a detection unit for detecting the light beams reflected by the reflection unit.
摘要翻译：传感器通过利用光子量子环激光器发射具有与来自光子量子环的辐射的变化角度相关联的不同波长的光线的现象，通过收集诸如汽车之间的距离，速度和加速度等信息来防止汽车碰撞。用于防止汽车碰撞的传感器包括：光子量子环激光器阵列，其根据视角发射具有不同波长的激发光束;反射单元，用于反射从光子量子环激光器阵列振荡的光束;以及检测单元，由反射单元反射的光束。

9. 发明授权

US5561683A Circular grating surface emitting laser diode 失效
标题翻译：圆形光栅表面发射激光二极管
公开(公告)号：US5561683A
公开(公告)日：1996-10-01
申请号：US379223
申请日：1995-01-27
申请人： O'Dae Kwon
发明人： O'Dae Kwon
IPC分类号： H01S5/06 , H01S5/042 , H01S5/062 , H01S5/10 , H01S5/18 , H01S5/183 , H01S5/187 , H01S5/40 , H01S5/42 , H01S3/18 , G02B5/18 , H01L33/00 , H01S3/08
CPC分类号： H01S5/18386 , H01S5/0425 , H01S5/06243 , H01S5/105 , H01S5/4075 , H01S5/423
摘要： A surface emitting laser diode comprises a circular grating defined on the top surface of the diode for emitting a laser therethrough, an active layer for generating the laser in the region thereof under the circular grating, a reflection layer for preventing the laser from emitting through the bottom surface of the diode and a first contact, which includes a plurality of electrodes, for providing the active layer with carriers of a first conduction type and a second contact for providing the active layer with carriers of a second conduction type.
摘要翻译：表面发射激光二极管包括限定在二极管的顶表面上用于发射激光的圆形光栅，用于在圆形光栅下的区域中产生激光的有源层，用于防止激光通过二极管的底表面和包括多个电极的第一触点，用于向有源层提供第一导电类型和第二触点的载流子，用于向有源层提供具有第二导电类型的载流子。

10. 发明授权

US5238867A Method for preparing an optical switching device having multiple quantum wells 失效
标题翻译：一种具有多个量子阱的光开关器件的制备方法
公开(公告)号：US5238867A
公开(公告)日：1993-08-24
申请号：US818846
申请日：1992-01-10
申请人： O'Dae Kwon , Seung-Won Lee
发明人： O'Dae Kwon , Seung-Won Lee
IPC分类号： G02F1/015 , G02F3/02 , H01L21/205 , H01L31/10
CPC分类号： G02F3/028 , Y10S148/16
摘要： Disclosed herein is a novel process for the manufacture of optical bistable switching device including multiple quantum wells. The process is carried out by: supplying a first organo-metallic compound as the source of a first metallic element and a reaction gas continuously while supplying a second organo-metallic compound as the source of a second metallic element in a discrete mode into a reactor and cultivating a semiconductor multiple quantum wells region having multiple pairs of intrinsic semiconductor-layer/semiconductor-layer(GaAs/AlGaAs), one of the layer containing said second metallic element(Al), while controlling the mole fraction of said second metallic element(Al) to be in the range of 0.01 to 0.25 of the total first and second metal contents existing in the layer containing the second metallic element, thereby lowering the impurity concentration and optimizing the negative resistance.
摘要翻译：本文公开了一种用于制造包括多个量子阱的光学双稳态开关器件的新颖方法。该方法通过以下方式进行：将第一有机金属化合物作为第一金属元素的源和反应气体连续供给，同时以离散模式将第二有机金属化合物作为第二金属元素的源供入反应器以及培养具有多对本征半导体层/半导体层（GaAs / AlGaAs）的半导体多量子阱区域，所述本体半导体层/半导体层（GaAs / AlGaAs）是包含所述第二金属元素（Al）的层之一，同时控制所述第二金属元素 Al）在含有第二金属元素的层中的总第一和第二金属含量的0.01至0.25的范围内，从而降低杂质浓度并优化负电阻。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式