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1. 发明申请

US20060125014A1 Diode with low junction capacitance 审中-公开
标题翻译：具有低结电容的二极管
公开(公告)号：US20060125014A1
公开(公告)日：2006-06-15
申请号：US11012466
申请日：2004-12-14
申请人： Nui Chong , Chun Jiang , Loc Nguyen
发明人： Nui Chong , Chun Jiang , Loc Nguyen
IPC分类号： H01L23/62
CPC分类号： H01L29/861 , H01L27/0255 , H01L27/0811 , H01L27/0814
摘要： A diode is comprised of a doped region formed with a first dopant of a first conductivity type. In addition, the diode further comprises a substrate doped with a second dopant of a second conductivity type opposite of the first conductivity type. The lightly doped substrate, instead of a well, abuts the doped region for minimizing a junction capacitance of the diode. Such a diode is especially advantageous for ESD (electro-static discharge) protection of high speed integrated circuits.
摘要翻译：二极管由形成有第一导电类型的第一掺杂剂的掺杂区组成。此外，二极管还包括掺杂有与第一导电类型相反的第二导电类型的第二掺杂剂的衬底。轻掺杂衬底（而不是阱）邻接掺杂区域以最小化二极管的结电容。这种二极管对于高速集成电路的ESD（静电放电）保护是特别有利的。

2. 发明授权

US07265129B2 Anti-infective biaryl compounds 失效
标题翻译：抗感染联芳化合物
公开(公告)号：US07265129B2
公开(公告)日：2007-09-04
申请号：US10532271
申请日：2003-10-24
申请人： Peter Jones , Roland W. Burli , Chun Jiang , Dustin L. McMinn
发明人： Peter Jones , Roland W. Burli , Chun Jiang , Dustin L. McMinn
IPC分类号： C07D471/02 , C07D403/02 , A61K31/4745 , A61K31/42
CPC分类号： C07D401/14 , C07D403/14 , C07D409/14 , C07D471/04 , C07D473/00 , C07D487/04
摘要： Compounds represented by the formula (I), where R1, R2, R3, R4, R5, and Q are as defined herein, exhibit activity against infectious pathogens
摘要翻译：由式（I）表示的化合物，其中R 1，R 2，R 3，R 4，R 5和Q如本文所定义，表现出对感染性病原体的活性

3. 发明申请

US20070111403A1 Polycide fuse with reduced programming time 审中-公开
标题翻译： Polycide保险丝，减少编程时间
公开(公告)号：US20070111403A1
公开(公告)日：2007-05-17
申请号：US11274037
申请日：2005-11-15
申请人： Chun Jiang , Sunil Mehta , Stewart Logie
发明人： Chun Jiang , Sunil Mehta , Stewart Logie
IPC分类号： H01L21/82 , H01L27/10 , H01L21/8242
CPC分类号： H01L23/5256 , G11C17/16 , H01L27/112 , H01L27/11206 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a polycide fuse is provided that includes: a polysilicon layer; a silicide layer formed on the polysilicon layer; and a silicon nitride layer formed on the silicide layer by RTCVD, the silicon nitride layer having a relatively low hydrogen concentration and relatively low mechanical stress.
摘要翻译：在一个实施例中，提供了多晶硅熔丝，其包括：多晶硅层; 形成在所述多晶硅层上的硅化物层; 以及通过RTCVD在硅化物层上形成的氮化硅层，氮化硅层具有相对低的氢浓度和相对低的机械应力。

4. 发明授权

US06737702B1 Zero power memory cell with reduced threshold voltage 失效
标题翻译：零功率存储单元，具有降低的阈值电压
公开(公告)号：US06737702B1
公开(公告)日：2004-05-18
申请号：US10626089
申请日：2003-07-24
申请人： Chun Jiang , Sunil Mehta , Stewart Logie
发明人： Chun Jiang , Sunil Mehta , Stewart Logie
IPC分类号： H01L29788
CPC分类号： H01L27/11521 , H01L21/823807 , H01L21/823892 , H01L27/115 , H01L27/11558
摘要： A zero power memory cell includes first and second NMOS transistors and a PMOS transistor, wherein the first NMOS transistor and first PMOS transistor each include a three-implant channel region, and wherein the second NMOS transistor further includes a two-implant channel region.
摘要翻译：零功率存储单元包括第一和第二NMOS晶体管和PMOS晶体管，其中第一NMOS晶体管和第一PMOS晶体管各自包括三注入沟道区，并且其中第二NMOS晶体管还包括双注入沟道区。

5. 发明授权

US6166558A Method for measuring gate length and drain/source gate overlap 失效
标题翻译：测量栅极长度和漏极/源极栅极重叠的方法
公开(公告)号：US6166558A
公开(公告)日：2000-12-26
申请号：US237540
申请日：1999-01-26
申请人： Chun Jiang , Wei Long , Zicheng G. Ling , Yowjuang W. Liu
发明人： Chun Jiang , Wei Long , Zicheng G. Ling , Yowjuang W. Liu
IPC分类号： H01L21/66 , H01L29/78
CPC分类号： H01L22/12
摘要： The invention provides a method and apparatus for calculating gate length and source/drain gate overlap, by measuring gate capacitance. The invention uses previously known fringe capacitance C.sub.fr and unit capacitance C.sub.OX. The invention measures gate capacitance C.sub.g, when the gate is accumulatively biased, and solves for overlap capacitance C.sub.OV using the equation C.sub.OV =(C.sub.g -2C.sub.fr)/2 or C.sub.OV =(C.sub.gg -C.sub.gb -2C.sub.fr)/2. The invention then measures the gate capacitance C.sub.g when the gate to source/drain voltage is set to inversion bias and a zero voltage is applied between the source/drain and the substrate, and solves for the channel capacitance C.sub.ch using the equation C.sub.ch =C.sub.g -2C.sub.fr -2C.sub.OV. The invention calculates the channel capacitance C.sub.ch where C.sub.ch =C.sub.g -2C.sub.fr -2C.sub.OV and then calculates gate length where gate length L.sub.g =(2C.sub.OV +C.sub.ch)/C.sub.OX and the effective gate length L.sub.eff =C.sub.ch /C.sub.OX. The invention further calculates source/drain gate overlap L.sub.OV, by setting L.sub.OV =C.sub.OV /C.sub.OX.
摘要翻译：本发明提供了一种通过测量栅极电容来计算栅极长度和源极/漏极栅极重叠的方法和装置。本发明使用先前已知的边缘电容Cfr和单位电容COX。本发明在栅极被累积偏置时测量栅极电容Cg，并使用公式COV =（Cg-2Cfr）/ 2或COV =（Cgg-Cgb-2Cfr）/ 2求解重叠电容COV。然后，当栅极/源极/漏极电压被设置为反向偏压并且在源极/漏极和衬底之间施加零电压，并且使用公式Cch = Cg-1求解沟道电容Cch时，本发明测量栅极电容Cg。 2Cfr-2COV。本发明计算Cch = Cg-2Cfr-2COV的沟道电容Cch，然后计算栅极长度Lg =（2COV + Cch）/ COX和有效栅极长度Leff = Cch / COX的栅极长度。本发明通过设定LOV = COV / COX，进一步计算源极/漏极栅极重叠LOV。

6. 发明授权

US6137126A Method to reduce gate-to-local interconnect capacitance using a low dielectric constant material for LDD spacer 有权
标题翻译：使用LDD间隔物的低介电常数材料来减少门到局部互连电容的方法
公开(公告)号：US6137126A
公开(公告)日：2000-10-24
申请号：US375499
申请日：1999-08-17
申请人： Steven C. Avanzino , Minh Van Ngo , Angela T. Hui , Chun Jiang , Hamid Partovi
发明人： Steven C. Avanzino , Minh Van Ngo , Angela T. Hui , Chun Jiang , Hamid Partovi
IPC分类号： H01L21/336 , H01L21/768 , H01L29/49 , H01L29/72 , H01L27/10
CPC分类号： H01L29/6659 , H01L21/76895 , H01L29/4983 , Y10S257/90
摘要： The capacitance between a gate electrode of a transistor and local interconnect is reduced by employing SiC sidewall spacers on the side surfaces of the gate electrode when forming the source/drain regions with shallow extensions. Embodiments include forming SiC sidewall spacers at a width of about 500 .ANG. to about 800 .ANG. having a dielectric constant of less than about 3.2, depositing a silicon oxide inter-dielectric layer, and forming the local interconnect through the inter-dielectric layer. The resulting composite dielectric constant between the gate electrode and local interconnect is about 4.2 to about 4.7.
摘要翻译：当形成具有浅延伸的源极/漏极区域时，通过在栅电极的侧表面上使用SiC侧壁间隔来减小晶体管的栅电极和局部互连之间的电容。实施例包括将SiC侧壁间隔物形成为具有小于约3.2的介电常数的约500安培的宽度至约800安培角，沉积氧化硅介电层，以及通过介电层形成局部互连。栅电极和局部互连之间的所得复合介电常数为约4.2至约4.7。

7. 发明授权

US5986477A Method and system for providing an interconnect layout to reduce delays in logic circuits 失效
标题翻译：用于提供互连布局以减少逻辑电路中的延迟的方法和系统
公开(公告)号：US5986477A
公开(公告)日：1999-11-16
申请号：US940247
申请日：1997-09-30
申请人： Chun Jiang , Linda Milor
发明人： Chun Jiang , Linda Milor
IPC分类号： H01L21/768 , H01L23/522 , H01L23/535
CPC分类号： H01L21/768 , H01L23/5222 , H01L2924/0002
摘要： A system and method for providing a plurality of interconnects for a microcircuit is disclosed. The microcircuit has a plurality of functional components. The method and system include determining the placement of each of the plurality of functional components and determining a width of each of the plurality of interconnects. The determination of the width is based on a capacitance between each interconnect and a portion of the plurality of interconnects.
摘要翻译：公开了一种用于为微电路提供多个互连的系统和方法。微电路具有多个功能部件。该方法和系统包括确定多个功能组件中的每一个的位置并确定多个互连中的每一个的宽度。宽度的确定基于每个互连和多个互连的一部分之间的电容。

8. 发明申请

US20130038509A1 METHOD FOR COORDINATING TABLET COMPUTER WITH AT LEAST ONE OTHER TABLET COMPUTER TO PLAY AUDIO/VIDEO FILE AND PLAYING SYSTEM USING THE SAME 审中-公开
标题翻译：用于与至少一个其他平板计算机协调平板电脑的方法来播放音频/视频文件和使用它的播放系统
公开(公告)号：US20130038509A1
公开(公告)日：2013-02-14
申请号：US13570246
申请日：2012-08-09
申请人： Chun Jiang
发明人： Chun Jiang
IPC分类号： G09G5/00
CPC分类号： G06F3/1446 , G06F3/147 , G09G5/12 , G09G2356/00 , G09G2370/16
摘要： A method for coordinating a tablet computer with at least one other tablet computer to play an audio/video file and a playing system using the same are proposed. The method includes: establishing a wireless connection between a tablet computer acting as a master computer and at least one other tablet computer acting as a slave computer; the master computer generating an arrangement signal at least according to an arrangement of positions of the tablet computers; the master computer generating at least two divisional signals according to the arrangement signal and an audio/video file, each corresponding to a portion of video frame in the audio/video file; the master computer transmitting the divisional signals to the slave computer to enable the master computer and the slave computer to respectively display the portion of video frame corresponding to the divisional signals; and the master computer transmitting a synchronizing signal to the slave computer.
摘要翻译：提出了一种用于将平板计算机与至少一个其他平板计算机协调以播放音频/视频文件的方法和使用其的播放系统。该方法包括：在作为主计算机的平板计算机和作为从计算机的至少一个其他平板计算机之间建立无线连接; 所述主计算机至少根据所述平板计算机的位置的布置来产生布置信号; 所述主计算机根据所述布置信号产生至少两个分割信号，并且音频/视频文件分别对应于所述音频/视频文件中的视频帧的一部分; 主计算机将分割信号发送到从计算机，以使主计算机和从计算机分别显示对应于分割信号的视频帧的部分; 并且主计算机向从属计算机发送同步信号。

9. 发明申请

US20090163587A1 ESTER PRODRUGS OF PROSTRATIN AND RELATED PHORBOL COMPOUNDS 有权
标题翻译：前列腺素和相关药物化合物的ESTER产品
公开(公告)号：US20090163587A1
公开(公告)日：2009-06-25
申请号：US11995527
申请日：2006-07-13
申请人： Rensheng Xu , Weimin Zhao , Chun Jiang
发明人： Rensheng Xu , Weimin Zhao , Chun Jiang
IPC分类号： A61K31/215 , C07C69/66 , C07D303/02 , A61K31/336 , A61P31/12 , A61P35/00
CPC分类号： C07C69/12 , C07C69/013 , C07C69/34 , C07C69/52 , C07C229/24 , C07C2603/86
摘要： Ester prodrugs of phorbol compounds for the treatment of viral infections, neoplastic diseases, inflammatory reactions, and use as analgesics, wherein the phorbol compounds are derivatized with a -x-o-c(o)-R′ group linked to the 6-carbon of the phorbol residue.
摘要翻译：佛波醇化合物用于治疗病毒感染，肿瘤疾病，炎症反应和用作止痛剂的酯前体药物，其中佛波醇化合物用与佛波醇残基的6-碳连接的-xoc（o）-R'基团衍生化。

10. 发明申请

US20060148845A1 Anti-infective biaryl compounds 失效
标题翻译：抗感染联芳化合物
公开(公告)号：US20060148845A1
公开(公告)日：2006-07-06
申请号：US10532271
申请日：2003-10-24
申请人： Peter Jones , Roland Burli , Chun Jiang , Dustin McMinn
发明人： Peter Jones , Roland Burli , Chun Jiang , Dustin McMinn
IPC分类号： A61K31/4745 , A61K31/4184 , A61K31/433 , A61K31/422 , A61K31/42 , A61K31/425 , C07D471/02 , C07D403/02
CPC分类号： C07D401/14 , C07D403/14 , C07D409/14 , C07D471/04 , C07D473/00 , C07D487/04
摘要： Compounds represented by the formula (I), where R1, R2, R3, R4, R5, and Q are as defined herein, exhibit activity against infectious pathogens.
摘要翻译：由式（I）表示的化合物，其中R 1，R 2，R 3，R 4，R 5和Q如本文所定义，表现出对感染性病原体的活性。

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