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1. 发明授权

US4543489A Solid state image sensor 失效
标题翻译：固态图像传感器
公开(公告)号：US4543489A
公开(公告)日：1985-09-24
申请号：US706254
申请日：1985-02-28
申请人： Nozomu Harada , Yukio Endo , Okio Yoshida , Yoshiyuki Matsunaga
发明人： Nozomu Harada , Yukio Endo , Okio Yoshida , Yoshiyuki Matsunaga
IPC分类号： H01L27/146 , H04N3/15 , H04N9/04 , H01J40/14
CPC分类号： H01L27/14667 , H01L27/14665 , H04N3/15 , H04N9/045
摘要： A solid state image sensor with a plurality of cells comprising a photoelectric converting film formed on a semiconductor substrate for photoelectrically converting incoming light rays to generate signal charge, signal charge storage areas for storing said signal charge formed in said substrate, signal charge read out areas for reading out said signal charge from said storage area, conductor electrodes for making said photoelectric converting film electrically contact with said signal charge storage areas to lead said signal charge from said photoelectric converting film to said storage areas, and series of said conductor electrodes arranged along at least two or more row lines in a matrix of said conductor electrodes being displayed in the row direction by 1/2 of the length of one electrode one from the other as viewed in the column direction.
摘要翻译：一种具有多个单元的固态图像传感器，包括形成在半导体基板上的用于光电转换入射光线以产生信号电荷的光电转换膜，用于存储形成在所述基板中的所述信号电荷的信号电荷存储区域，信号电荷读出区域用于从所述存储区域读出所述信号电荷，用于使所述光电转换膜与所述信号电荷存储区域电接触的导体电极将所述信号电荷从所述光电转换膜引导到所述存储区域，并且所述导体电极串联布置所述导体电极的矩阵中的至少两条或更多条行线沿着列方向从行方向显示为一个电极的长度的1/2。

2. 发明授权

US5446493A Solid state image sensors for reproducing high definition images 失效
标题翻译：用于再现高分辨率图像的固态图像传感器
公开(公告)号：US5446493A
公开(公告)日：1995-08-29
申请号：US207267
申请日：1994-03-09
申请人： Yukio Endo , Nozomu Harada , Hidenori Shibata , Yoshiyuki Matsunaga
发明人： Yukio Endo , Nozomu Harada , Hidenori Shibata , Yoshiyuki Matsunaga
IPC分类号： H01L27/148 , H04N5/341 , H04N5/372 , H04N5/335
CPC分类号： H04N3/1531 , H01L27/14831
摘要： A solid state image sensor has a photosensing region formed on a substrate. The photosensing region has a plurality of photocells for receiving an incident image. The photosensing region is capable of changing image sampling modes by relatively shifting image sampling points for the incident image. In the photosensing region, a plurality of first transfer elements are formed and the first transfer elements receive the signal charges from adjoining photocells and transfer them out. Further, a temporary storage region is formed on the substrate having a plurality of second transfer elements therein for each of the first transfer elements. Each of the second transfer elements has a capacity to accommodate all of the signal charges of a corresponding first transfer elements which are read out from the photocells at the same time. A plurality of gate elements are respectively formed between each of the first transfer elements and their corresponding plurality of second transfer elements. Each gate elements changes transfer direction from one of the first transfer elements between at least two of the second transfer elements based on the sampling mode for the incident image. Third transfer elements are formed adjacent to the temporary storage region. The third transfer elements repeat a readout cycle of receiving the signal charges from a plurality of second transfer elements and then transferring them out.
摘要翻译：固态图像传感器具有形成在基板上的感光区域。感光区域具有用于接收入射图像的多个光电管。光敏区域能够通过相对移动用于入射图像的图像采样点来改变图像采样模式。在感光区域中，形成多个第一传送元件，并且第一传送元件接收来自相邻光电元件的信号电荷并将其传送出去。此外，在其中具有用于每个第一转印元件的多个第二转印元件的基板上形成临时存储区域。每个第二传送元件具有容纳同时从光电管读出的对应的第一传送元件的所有信号电荷的能力。分别在每个第一传送元件和它们对应的多个第二传送元件之间形成多个栅极元件。每个门元件基于入射图像的采样模式，在至少两个第二传送元件之间从第一传送元件之一改变传送方向。在临时存储区域附近形成第三传送元件。第三传送元件重复从多个第二传送元件接收信号电荷然后将其传送出去的读出周期。

3. 发明授权

US5060070A Solid state image sensor having low and high level signal component detectors 失效
标题翻译：具有低电平和高电平信号分量检测器的固态图像传感器
公开(公告)号：US5060070A
公开(公告)日：1991-10-22
申请号：US527444
申请日：1990-05-23
申请人： Yasuaki Nishida , Yoshiyuki Matsunaga , Nozomu Harada , Sohei Manabe , Yukio Endo
发明人： Yasuaki Nishida , Yoshiyuki Matsunaga , Nozomu Harada , Sohei Manabe , Yukio Endo
IPC分类号： H01L27/148 , H04N5/335 , H04N5/347 , H04N5/355 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374 , H04N5/378
CPC分类号： H04N3/1575 , H01L27/14831 , H04N5/335
摘要： A solid state image sensor comprises a CCD type image sensing device and a signal detector. This signal detector comprises an FDA type signal detection circuit connected to a signal pick-up terminal of the image sensing device and having a small amount of saturating signals and low noise, an FDA type signal detection circuit connected to the signal pick-up terminal and having a large amount of saturating signals and high noise, and a signal composing circuit for composing the outputs of both signal detection circuits and outputting a composed output and changing a composing ratio in accordance with the output of the FDA type signal detection circuit.

4. 发明授权

US4996600A Two dimensional solid state image sensing device 失效
标题翻译：二维固态摄像装置
公开(公告)号：US4996600A
公开(公告)日：1991-02-26
申请号：US363085
申请日：1989-06-08
申请人： Yasuaki Nishida , Yoshiki Iino , Hiroshi Ohtake , Masahide Abe , Shigeo Yoshikawa , Yukio Endo , Yoshiyuki Matsunaga , Nozomu Harada
发明人： Yasuaki Nishida , Yoshiki Iino , Hiroshi Ohtake , Masahide Abe , Shigeo Yoshikawa , Yukio Endo , Yoshiyuki Matsunaga , Nozomu Harada
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/355 , H04N5/357 , H04N5/3722 , H04N5/3725 , H04N5/3728 , H04N5/374
CPC分类号： H04N3/1575 , H04N3/1537
摘要： A solid state image sensing device comprises a great number of light receiving elements arrayed in rows and columns, a plurality of vertical CCD registers respectively coupled to columns of the light receiving elements for vertically transferring signal charges sensed by the light receiving elements, a horizontal CCD register for horizontally transferring the signal charges transferred from the vertical CCD register, an adder section for adding together signal charges obtained from a predetermined number of light receiving elements arrayed in columns and rows to form one added signal charge and for obtaining a plurality of added signal charges for all the light receiving elements in each of fields, and a field switcher for introducing signal charges obtained from an array of light receiving elements with at least one element shifted from the previous field to the adder section in each field.

5. 发明授权

US4972254A Solid state image sensors for reproducing high definition images 失效
标题翻译：用于再现高分辨率图像的固态图像传感器
公开(公告)号：US4972254A
公开(公告)日：1990-11-20
申请号：US157718
申请日：1988-02-19
申请人： Yukio Endo , Nozomu Harada , Hidenori Shibata , Yoshiyuki Matsunaga
发明人： Yukio Endo , Nozomu Harada , Hidenori Shibata , Yoshiyuki Matsunaga
IPC分类号： H01L27/148 , H04N5/341 , H04N5/372
CPC分类号： H04N3/1531 , H01L27/14831
摘要： The solid state image sensor has a photosensing region formed on a substrate. The photosensing region has a plurality of photocells for receiving an incident image. The photosensing region is capable of changing image sampling modes by relatively shifting image sampling points for the incident image. In the photosensing region, a plurality of first transfer elements are formed and the first transfer elements receive the signal charges from adjoining photocells and transfer them out. Further, a temporary storage region is formed on the substrate having a plurality of second transfer elements therein for each of the first transfer elements. Each of the second transfer elements has a capacity to accommodate all of the signal charges of a corresponding first transfer elements which are read out from the photocells at the same time. A plurality of gate elements are respectively formed between each of the first transfer elements and their corresponding plurality of second transfer elements. Each gate elements changes transfer direction from one of the first transfer elements between at least two of the second transfer elements based on the sampling mode for the incident image. Third transfer elements are formed adjacent to the temporary storage region. The third transfer elements repeat a readout cycle of receiving the signal charges from a plurality of second transfer elements and then transferring them out.
摘要翻译：固态图像传感器具有形成在基板上的感光区域。感光区域具有用于接收入射图像的多个光电管。光敏区域能够通过相对移动用于入射图像的图像采样点来改变图像采样模式。在感光区域中，形成多个第一传送元件，并且第一传送元件接收来自相邻光电元件的信号电荷并将其传送出去。此外，在其中具有用于每个第一转印元件的多个第二转印元件的基板上形成临时存储区域。每个第二传送元件具有容纳同时从光电管读出的对应的第一传送元件的所有信号电荷的能力。分别在每个第一传送元件和它们对应的多个第二传送元件之间形成多个栅极元件。每个门元件基于入射图像的采样模式，在至少两个第二传送元件之间从第一传送元件之一改变传送方向。在临时存储区域附近形成第三传送元件。第三传送元件重复从多个第二传送元件接收信号电荷然后将其传送出去的读出周期。

6. 发明授权

US4912560A Solid state image sensing device 失效
标题翻译：固态摄像装置
公开(公告)号：US4912560A
公开(公告)日：1990-03-27
申请号：US302248
申请日：1989-01-27
申请人： Shinji Osawa , Yoshiyuki Matsunaga , Nozomu Harada
发明人： Shinji Osawa , Yoshiyuki Matsunaga , Nozomu Harada
IPC分类号： H01L27/146 , H01L27/148 , H04N5/359 , H04N5/365 , H04N5/372
CPC分类号： H04N5/37213 , H01L27/14665 , H04N5/3597 , H04N5/365
摘要： A solid state image sensing device includes a plurality of light-receiving/storage elements formed on a semiconductor substrate, vertical registers vertically extending along the light-receiving/storage elements, a horizontal register connected to ends of the vertical registers and horizontally extending, a charge read section, arranged between the light-receiving/storage element and the vertical register, for reading charge from each light-receiving/storage element to the corresponding vertical register, and a charge injection section for injecting bias charge to each light-receiving/storage element. Excessive bias charge is discharged to the semiconductor substrate through the vertical registers by setting gates in the charge read sections to be low level.
摘要翻译：固体摄像装置包括形成在半导体衬底上的多个光接收/存储元件，沿着光接收/存储元件垂直延伸的垂直寄存器，连接到垂直寄存器的端部并水平延伸的水平寄存器，电荷读取部分，布置在光接收/存储元件和垂直寄存器之间，用于从每个光接收/存储元件读取电荷到相应的垂直寄存器;以及电荷注入部分，用于将偏置电荷注入到每个光接收/ 存储元件通过将电荷读取部分中的栅极设置为低电平，通过垂直寄存器将过大的偏置电荷放电到半导体衬底。

7. 发明授权

US4807037A Low noise CCD image sensor having a plurality of horizontal CCD registers 失效
标题翻译：具有多个水平CCD寄存器的低噪声CCD图像传感器
公开(公告)号：US4807037A
公开(公告)日：1989-02-21
申请号：US117614
申请日：1987-11-06
申请人： Mamoru Iesaka , Yoshiyuki Matsunaga , Sohei Manabe , Nozomu Harada
发明人： Mamoru Iesaka , Yoshiyuki Matsunaga , Sohei Manabe , Nozomu Harada
IPC分类号： H01L27/148 , H04N5/372 , H04N3/14
CPC分类号： H04N3/1575 , H01L27/14831
摘要： In a CCD image sensor, a plurality of horizontal CCD registers are disposed adjacent to an image sensing area having matrix-arrayed image sensing cells and a plurality of vertical CCD registers. In the CCD image sensor, the channel impurity concentration of second horizontal CCD register, located away from the image sensing area, is more higher than that of first horizontal CCD register. With this feature, when the charges are transferred to the second horizontal CCD register across the first horizontal register, the residual charges in the first horiozntal CCD register are remarkably reduced.
摘要翻译：在CCD图像传感器中，多个水平CCD寄存器被布置为与具有矩阵阵列的图像感测单元和多个垂直CCD寄存器的图像感测区域相邻。在CCD图像传感器中，位于远离图像感测区域的第二水平CCD寄存器的沟道杂质浓度比第一水平CCD寄存器的沟道杂质浓度更高。利用该特征，当电荷在第一水平寄存器中被传送到第二水平CCD寄存器时，第一水平CCD寄存器中的剩余电荷显着减小。

8. 发明授权

US4963956A Solid image pickup apparatus 失效
标题翻译：固体摄像装置
公开(公告)号：US4963956A
公开(公告)日：1990-10-16
申请号：US233130
申请日：1988-08-17
申请人： Sohei Manabe , Yoshiyuki Matsunaga , Nozomu Harada
发明人： Sohei Manabe , Yoshiyuki Matsunaga , Nozomu Harada
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/347 , H04N5/357 , H04N5/369 , H04N5/372 , H04N5/374
CPC分类号： H01L27/14831
摘要： A solid image pickup apparatus comprises a plurality of photo sensing elements, arranged on a semiconductor substrate two-dimensionally and spaced mutually by specified distances, for outputting electric charges on receiving light, a semiconductor channel formed among the photo sensing elements and transferring electric charges output from the photo sensing elements. The semiconductor channel comprises cross-shaped channel members, each channel member being located inside four photo sensing elements. A plurality of vertical transfer electrodes, are provided on the channel members, for giving electric potential to the channel members and having electric charges transferred to the channel members of the next stages. Each of the channel members comprises a wide-width part and a narrow-width part located between the wide-width part and the channel member of the next stage. The narrow-width part is formed by an ion-implanting method to have a higher impurity concentration than that of the wide-width part.
摘要翻译：固体图像拾取装置包括多个光敏元件，其被二维地布置在相互间隔一定距离的半导体衬底上，用于在接收光上输出电荷;在光感测元件之间形成的半导体沟道和传送电荷输出从感光元件。半导体通道包括十字形通道构件，每个通道构件位于四个感光元件内。多个垂直传输电极设置在通道构件上，用于给通道构件提供电势，并且将电荷转移到下一级的通道构件。每个通道构件包括宽幅部分和位于下一级的宽度部分和通道部件之间的窄宽度部分。窄带部分通过离子注入法形成，具有比宽幅部分更高的杂质浓度。

9. 发明授权

US06507365B1 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US06507365B1
公开(公告)日：2003-01-14
申请号：US09450749
申请日：1999-11-30
申请人： Nobuo Nakamura , Yoshitaka Egawa , Shinji Ohsawa , Yukio Endo , Yoshiyuki Matsunaga , Yoriko Tanaka , Fumio Izawa , Hiroki Miura , Ryohei Miyagawa , Ikuko Inoue , Tsuyoshi Arakawa , Yoshiyuki Tomizawa , Makoto Hoshino
发明人： Nobuo Nakamura , Yoshitaka Egawa , Shinji Ohsawa , Yukio Endo , Yoshiyuki Matsunaga , Yoriko Tanaka , Fumio Izawa , Hiroki Miura , Ryohei Miyagawa , Ikuko Inoue , Tsuyoshi Arakawa , Yoshiyuki Tomizawa , Makoto Hoshino
IPC分类号： H04N314
CPC分类号： H04N5/361 , H04N5/23274 , H04N5/2357 , H04N5/3452 , H04N5/3454 , H04N5/353 , H04N5/374
摘要： A solid-state imaging device with a variable (continuous) electronic shutter function comprises an imaging area where unit cells with photodiodes acting as pixels are arranged two-dimensionally, read lines for driving the read transistors in each pixel row, vertical selection lines for driving the vertical selection transistors in each pixel row, a vertical driving circuit for selectively driving vertical selection lines, vertical signal lines for outputting the signal from each unit cell in the pixel rows driven sequentially, and a row selection circuit for controlling the vertical driving circuit in such a manner that the vertical driving circuit drives the read transistors in each pixel row with the desired signal storage timing and signal read timing twice in that order and thereby drives the vertical selection transistors in the pixel row in synchronization with the signal read timing.
摘要翻译：具有可变（连续）电子快门功能的固态成像装置包括成像区域，其中以二维作为像素的光电二极管的单位单元被二维布置，用于驱动每个像素行中的读取晶体管的读取线，用于驱动的垂直选择线每个像素行中的垂直选择晶体管，用于选择性地驱动垂直选择线的垂直驱动电路，用于输出依次驱动的像素行中的每个单元的信号的垂直信号线和用于控制垂直驱动电路的行选择电路垂直驱动电路以期望的信号存储定时和信号读取定时以该顺序驱动每个像素行中的读取晶体管，从而与信号读取定时同步地驱动像素行中的垂直选择晶体管。

10. 发明授权

US5438211A Charge-transfer device having an improved charge-sensing section 失效
标题翻译：电荷转移装置具有改进的电荷感测部分
公开(公告)号：US5438211A
公开(公告)日：1995-08-01
申请号：US220708
申请日：1994-03-31
申请人： Nobuo Nakamura , Yoshiyuki Matsunaga , Yoshihito Koya , Yukio Endo
发明人： Nobuo Nakamura , Yoshiyuki Matsunaga , Yoshihito Koya , Yukio Endo
IPC分类号： H01L29/768 , H01L29/78
CPC分类号： H01L29/76816 , H01L29/76841
摘要： A charge-transfer device contains a high-resistance p-well layer formed in the surface of an n-type semiconductor substrate. In the surface of the well layer, a charge-transfer n-channel layer, a charge storage n-channel layer, a charge release n-channel layer, and a charge release n-type drain are formed continuously. An output gate electrode is provided above the junction of the transfer channel layer and the storage channel layer, with an insulating film interposed therebetween. Provided above the release channel layer is a reset gate electrode with an insulating film interposed therebetween. In the surface of the storage channel layer, a charge-sensing p-channel layer of a charge-sensing transistor is formed. The charge-sensing channel layer is arranged so as to be in contact with neither the transfer channel layer nor the release channel layer. The storage channel layer is arranged so as to contain a first surface portion which adjoins the transfer channel layer and is in contact with a covering insulating film, and a second surface portion which adjoins the release channel layer and is in contact with the covering insulating film. In the surface of the substrate, a p-type source and drain layers of the charge-sensing transistor are formed so as to face each other with the sensing channel interposed therebetween. The potential of the storage channel layer without charges is set higher than that of the release drain layer.
摘要翻译：电荷转移装置包含在n型半导体衬底的表面上形成的高电阻p阱层。在阱层的表面中连续地形成电荷传输n沟道层，电荷存储n沟道层，电荷释放n沟道层和电荷释放型n型漏极。输出栅电极设置在传输沟道层和存储沟道层的结的上方，隔着绝缘膜。在释放通道层上方设置有复位栅电极，其间具有绝缘膜。在存储通道层的表面形成电荷感测晶体管的电荷感应p沟道层。电荷感测沟道层被布置成与传输沟道层和释放通道层都不接触。存储通道层被布置成包含邻接传输沟道层并与覆盖绝缘膜接触的第一表面部分和与释放通道层相邻并与覆盖绝缘膜接触的第二表面部分。在基板的表面中，电荷感测晶体管的p型源极和漏极层形成为彼此面对，并且其间插入感测通道。没有电荷的存储通道层的电位被设定为高于释放漏极层的电位。

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