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1. 发明授权

US06828234B2 RTP process chamber pressure control 失效
标题翻译： RTP处理室压力控制
公开(公告)号：US06828234B2
公开(公告)日：2004-12-07
申请号：US10108779
申请日：2002-03-26
申请人： Norman Tam , Teresa Trowbridge
发明人： Norman Tam , Teresa Trowbridge
IPC分类号： H01L2144
CPC分类号： H01L21/67115 , H01L21/67109
摘要： A method that includes flowing an inert gas into an interior of a single wafer process chamber to create a pressure in the interior that is greater than an ambient pressure; and maintaining the greater interior pressure during a wafer transfer with the single wafer process chamber.
摘要翻译：一种方法，其包括将惰性气体流入单个晶片处理室的内部，以在内部产生大于环境压力的压力; 并且在用单晶片处理室进行晶片传送期间保持较大的内部压力。

2. 发明授权

US08608853B2 Thermal reactor with improved gas flow distribution 有权
标题翻译：具有改善气流分布的热反应器
公开(公告)号：US08608853B2
公开(公告)日：2013-12-17
申请号：US13296531
申请日：2011-11-15
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： C23C16/00
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译：本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件，室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上，并且排气组件限定了被配置为延长处理量的排气量。

3. 发明申请

US20120058648A1 THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION 有权
标题翻译：具有改善气体流量分布的热反应器
公开(公告)号：US20120058648A1
公开(公告)日：2012-03-08
申请号：US13296531
申请日：2011-11-15
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： H01L21/26 , H05B3/02
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译：本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件，室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上，并且排气组件限定了被配置为延长处理量的排气量。

4. 发明授权

US08056500B2 Thermal reactor with improved gas flow distribution 有权
标题翻译：具有改善气流分布的热反应器
公开(公告)号：US08056500B2
公开(公告)日：2011-11-15
申请号：US12339671
申请日：2008-12-19
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Mehran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： B05B5/00
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译：本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件，室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上，并且排气组件限定了被配置为延长处理量的排气量。

5. 发明申请

US20090081884A1 METHOD OF IMPROVING OXIDE GROWTH RATE OF SELECTIVE OXIDATION PROCESSES 有权
标题翻译：改善选择性氧化过程氧化生长速率的方法
公开(公告)号：US20090081884A1
公开(公告)日：2009-03-26
申请号：US11860161
申请日：2007-09-24
申请人： YOSHITAKA YOKOTA , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
发明人： YOSHITAKA YOKOTA , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
IPC分类号： H01L21/316
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
摘要翻译：公开并要求保护半导体器件中含硅材料的选择性氧化的方法。一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。衬底中的其它材料，例如金属和阻挡层，不被氧化。

6. 发明授权

US07509035B2 Lamp array for thermal processing exhibiting improved radial uniformity 有权
标题翻译：用于热处理的灯阵列具有改善的径向均匀性
公开(公告)号：US07509035B2
公开(公告)日：2009-03-24
申请号：US11195395
申请日：2005-08-02
申请人： Joseph M. Ranish , Corina E. Tanasa , Sundar Ramamurthy , Claudia Lai , Ravi Jallepally , Ramachandran Balasubramanian , Aaron M. Hunter , Agus Tjandra , Norman Tam
发明人： Joseph M. Ranish , Corina E. Tanasa , Sundar Ramamurthy , Claudia Lai , Ravi Jallepally , Ramachandran Balasubramanian , Aaron M. Hunter , Agus Tjandra , Norman Tam
IPC分类号： F26B19/00 , F27B5/14
CPC分类号： H01L21/67115 , H05B3/0047
摘要： A thermal processing chamber includes a substrate support rotating about a center axis and a lamphead of plural lamps in an array having a predetermined difference in radiance pattern between them. The radiance pattern includes a variation in diffuseness or collimation. In one embodiment, the center lines of all of the lamps are disposed away from the center axis. The array can be an hexagonal array, in which the center axis is located at a predetermined position between neighboring lamps.
摘要翻译：热处理室包括以中心轴为中心旋转的基板支撑体和具有预定的它们之间的辐射图形差异的阵列中的多个灯的灯头。辐射图包括扩散或准直的变化。在一个实施例中，所有灯的中心线远离中心轴设置。阵列可以是六边形阵列，其中中心轴位于相邻灯之间的预定位置。

7. 发明授权

US07951728B2 Method of improving oxide growth rate of selective oxidation processes 有权
标题翻译：提高选择性氧化工艺氧化物生长速率的方法
公开(公告)号：US07951728B2
公开(公告)日：2011-05-31
申请号：US11860161
申请日：2007-09-24
申请人： Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
发明人： Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
IPC分类号： H01L21/00
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
摘要翻译：公开并要求保护半导体器件中含硅材料的选择性氧化的方法。一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。衬底中的其它材料，例如金属和阻挡层，不被氧化。

8. 发明申请

US20090163042A1 THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION 有权
标题翻译：具有改善气体流量分布的热反应器
公开(公告)号：US20090163042A1
公开(公告)日：2009-06-25
申请号：US12339671
申请日：2008-12-19
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Medhran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Medhran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： H01L21/263 , A61L2/04
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译：本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件，室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上，并且排气组件限定了被配置为延长处理量的排气量。

9. 发明授权

US08546271B2 Method of improving oxide growth rate of selective oxidation processes 有权
公开(公告)号：US08546271B2
公开(公告)日：2013-10-01
申请号：US13117931
申请日：2011-05-27
申请人： Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
发明人： Yoshitaka Yokota , Norman Tam , Balasubramanian Ramachandran , Martin John Ripley
IPC分类号： H01L21/02
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.

10. 发明授权

US08207044B2 Methods for oxidation of a semiconductor device 有权
标题翻译：氧化半导体器件的方法
公开(公告)号：US08207044B2
公开(公告)日：2012-06-26
申请号：US13110613
申请日：2011-05-18
申请人： Rajesh Mani , Norman Tam , Timothy W. Weidman , Yoshitaka Yokota
发明人： Rajesh Mani , Norman Tam , Timothy W. Weidman , Yoshitaka Yokota
IPC分类号： H01L21/331
CPC分类号： H01L21/31662 , H01L21/0223 , H01L21/02238 , H01L21/02244 , H01L21/02252 , H01L21/28273 , H01L21/31683 , H01L21/32105
摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.
摘要翻译：本文提供了在半导体衬底上制造氧化物层的方法。氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层，含有气体或含氮气体。

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