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1. 发明授权

US5221860A High speed laser package 失效
标题翻译：高速激光包装
公开(公告)号：US5221860A
公开(公告)日：1993-06-22
申请号：US657019
申请日：1991-02-19
申请人： Norman R. Dietrich , Palmer D. Smeltz, Jr.
发明人： Norman R. Dietrich , Palmer D. Smeltz, Jr.
IPC分类号： H01L33/00 , H01S5/00 , H01S5/022 , H01S5/062
CPC分类号： H01S5/02216 , H01S5/042 , H01S5/06226
摘要： An optical package for use with a laser diode in high speed applications. The package comprises a metallic housing with a multilayer ceramic (MLC) insert disposed through a sidewall thereof. The MLC insert is utilized to form a microstrip transmission line of a bandwidth sufficient to couple a high frequency signal source to the laser. A number of conductive vias are disposed through the thickness of the MLC insert at the package wall to serve as electric field shorts within the insert and improve the frequency response of the microstrip. A pair of such MLC inserts may be disposed through opposing sidewalls of the package and used to provide a conventional "butterfly" configuration, while preserving the integrity of the microstrip interconnection.

2. 发明授权

US4937660A Silicon-based mounting structure for semiconductor optical devices 失效
标题翻译：用于半导体光器件的硅基安装结构
公开(公告)号：US4937660A
公开(公告)日：1990-06-26
申请号：US287778
申请日：1988-12-21
申请人： Norman R. Dietrich , Ralph S. Moyer , Yiu-Huen Wong
发明人： Norman R. Dietrich , Ralph S. Moyer , Yiu-Huen Wong
IPC分类号： H01L33/00 , H01S5/00 , H01S5/02 , H01S5/022 , H01S5/026 , H01S5/042 , H01S5/062
CPC分类号： H01S5/02276 , H01L2224/45014 , H01L2224/48091 , H01L2224/48464 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12041 , H01L2924/30107 , H01L2924/3011 , H01S5/0427 , H01S5/06226 , Y10S257/904
摘要： A silicon-based laser mounting structure is disclosed which provides improved interconnection between a semiconductor optical device, such as a laser, and an external high frequency modulation current source, by reducing the presence of parasitic inductive elements in the interconnecting network. The structure includes a stripline transmission path formed by depositing metal conductive strips on the top and bottom surfaces of a silicon substrate. The conductive strips are coupled at one end to the external modulation current source. A thin film resistor is deposited between the second end of the top conductive strip and the semiconductor optical device. This thin film resistor is utilized to provide impedance matching between the optical device and the stripline. That is, for a laser with an impedance Z.sub.L, and a stripline designed to have an impedance Z.sub.S, the resistance R is chosen such that R+Z.sub.L =Z.sub.S. Utilizing silicon processing techniques, the thin film resistor may be placed adajcent to the laser, reducing the parasitics associated with their interconnection. A conductive via is formed through the substrate to provide a top-side bonding location for connecting the optical device to the bottom metal conductor, by providing the top-side site, the parasitic inductance associated with this interconnection is considerably reduced.

3. 发明授权

US4761788A Stripline mount for semiconductor lasers 失效
标题翻译：半导体激光器带状安装座
公开(公告)号：US4761788A
公开(公告)日：1988-08-02
申请号：US792055
申请日：1985-10-28
申请人： Norman R. Dietrich , Walter R. Holbrook , Anderson F. Johnson, Jr. , Alfred Zacharias
发明人： Norman R. Dietrich , Walter R. Holbrook , Anderson F. Johnson, Jr. , Alfred Zacharias
IPC分类号： H01S5/00 , H01L23/12 , H01S5/022 , H01S5/024 , H01S5/062 , H01S3/096
CPC分类号： H01S5/02415 , H01S5/02284 , H01L2224/48091 , H01L2224/48137 , H01S5/02272 , H01S5/02276 , H01S5/06226
摘要： A semiconductor laser mount is disclosed for use in high frequency (>500 Mb/s) applications. The mount comprises a stripline transmission path and resistive element formed in series with the optical device. Since the current sources used to modulate optical devices at these bit rates have a large impedance relative to that of the optical devices, the stripline is used as an impedance controlling network to provide frequency independent coupling from the signal source to the device and the resistive element is used to compensate the variation of the impedance of the device to essentially match that of the stripline. Since the impedance of individual optical devices may vary, the resistive element is sized to provide optimum matching. Both the stripline and resistive element are integrated with the mount material to form a monolithic structure. Additionally, low frequency optical device inputs may be formed on an isolated portion of the mount to increase the versatility of the arrangement by increasing the operable bandwidth of the optical device.
摘要翻译：公开了用于高频（> 500Mb / s）应用的半导体激光器安装座。支架包括带状线传输路径和与光学装置串联形成的电阻元件。由于用于以这些比特率调制光学器件的电流源相对于光学器件具有大的阻抗，因此带状线用作阻抗控制网络，以提供从信号源到器件和电阻元件的频率无关耦合用于补偿装置的阻抗的变化基本上与带状线的阻抗的变化。由于各个光学器件的阻抗可能会变化，所以电阻元件的大小可提供最佳匹配。带状线和电阻元件都与安装材料集成以形成整体结构。此外，低频光学器件输入可以形成在安装座的隔离部分上，以通过增加光学器件的可操作带宽来增加布置的通用性。

4. 发明授权

US5024966A Method of forming a silicon-based semiconductor optical device mount 失效
标题翻译：形成硅基半导体光学器件安装件的方法
公开(公告)号：US5024966A
公开(公告)日：1991-06-18
申请号：US510338
申请日：1990-04-16
申请人： Norman R. Dietrich , Ralph S. Moyer , Yiu-Huen Wong
发明人： Norman R. Dietrich , Ralph S. Moyer , Yiu-Huen Wong
IPC分类号： H01S5/02 , H01S5/022 , H01S5/026 , H01S5/042 , H01S5/062
CPC分类号： H01S5/02276 , H01L2224/48464 , H01L2924/01013 , H01L2924/01014 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/10253 , H01L2924/12041 , H01L2924/30107 , H01L2924/3011 , H01S5/0427 , H01S5/06226 , Y10S148/099 , Y10S148/168 , Y10S438/928
摘要： A silicon-based laser mounting structure is disclosed which provides improved interconnection between a semiconductor optical device, such as a laser, and an external high frequency modulation current source, by reducing the presence of parasitic inductive elements in the interconnecting network. The structure includes a stripline transmission path formed by depositing metal conductive strips on the top and bottom surfaces of a silicon substrate. The conductive strips are coupled at one end to the external modulation current source. A thin film resistor is deposited between the second end of the top conductive strip and the semiconductor optical device. This thin film resistor is utilized to provide impedance matching between the optical device and the stripline. That is, for a laser with an impedance Z.sub.L, and a stripline designed to have an impedance Z.sub.S, the resistance R is chosen such that R+Z.sub.L =Z.sub.S. Utilizing silicon processing techniques, the thin film resistor may be placed adjacent to the laser, reducing the parasitics associated with their interconnection. A conductive via is formed through the substrate to provide a top-side bonding location for connecting the optical device to the bottom metal conductor by providing the top-side site, the parasitic inductance associated with this interconnection is considerably reduced.
摘要翻译：公开了一种硅基激光器安装结构，其通过减少互连网络中的寄生电感元件的存在来提供诸如激光器的半导体光学器件与外部高频调制电流源之间的改进的互连。该结构包括通过在硅衬底的顶表面和底表面上沉积金属导电条而形成的带状线传输路径。导电条在一端耦合到外部调制电流源。在顶部导电带的第二端和半导体光学器件之间沉积薄膜电阻器。该薄膜电阻用于提供光学装置与带状线之间的阻抗匹配。也就是说，对于具有阻抗ZL的激光器和设计成具有阻抗ZS的带状线，选择电阻R使得R + ZL = ZS。利用硅处理技术，可以将薄膜电阻器放置在与激光器相邻的位置，从而减少与其互连相关联的寄生效应。通过衬底形成导电通孔，以提供通过提供顶侧部位将光学器件连接到底部金属导体的顶侧接合位置，与该互连相关联的寄生电感显着降低。

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