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热词
    • 10. 发明授权
    • Protection diode
    • 保护二极管
    • US08907424B2
    • 2014-12-09
    • US13739042
    • 2013-01-11
    • Koichi Fujita
    • Koichi Fujita
    • H01L23/62H01L27/02
    • H01L29/7808H01L27/0248H01L27/0255
    • A protection diode includes: a semiconductor substrate; a well region of a first conductivity type in the semiconductor substrate; a gate side diffusion region of a second conductivity type in the semiconductor substrate and joined to the well region; a grounding side diffusion region of the second conductivity type in the semiconductor substrate, separated from the gate side diffusion region, and joined to the well region; a gate side electrode connected between a gate of a transistor and the gate side diffusion region; and a grounding electrode connected to the grounding side diffusion region. Dopant impurity concentration in the grounding side diffusion region is lower than dopant impurity concentration in the gate side diffusion region.
    • 保护二极管包括:半导体衬底; 半导体衬底中的第一导电类型的阱区; 半导体衬底中的第二导电类型的栅极侧扩散区,并连接到阱区; 半导体衬底中的与栅极侧扩散区分离的第二导电类型的接地侧扩散区,并与阱区连接; 连接在晶体管的栅极和栅极侧扩散区之间的栅极电极; 以及连接到接地侧扩散区的接地电极。 接地侧扩散区域中的掺杂剂杂质浓度低于栅极侧扩散区域中的掺杂剂杂质浓度。