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    • 3. 发明申请
    • IMAGE FORMING APPARATUS, PROCESS CARTRIDGE, AND IMAGE BEARING MEMBER
    • 图像形成装置,过程盒和图像轴承部件
    • US20100330475A1
    • 2010-12-30
    • US12823865
    • 2010-06-25
    • Nozomu TAMOTOMitsuaki HiroseAkio KosugeMakoto Yasuda
    • Nozomu TAMOTOMitsuaki HiroseAkio KosugeMakoto Yasuda
    • G03G15/00G03G21/00G03G21/16
    • G03G5/14791G03G5/0614G03G5/071G03G5/147G03G5/14704G03G15/751
    • An image forming apparatus including an image bearing member having an electroconductive substrate on which are provided at least a photosensitive layer and a protection layer, in that sequence, a charging device that charges the surface of the image bearing member to form a latent electrostatic image thereon, a development device that develops the latent electrostatic image with a development agent containing toner to obtain a developed toner image, a cleaning device that removes toner remaining on the surface of the image bearing member and a lubricant material applicator that applies a lubricant material to the surface of the image bearing member, the protection layer containing a cured resin and a filler and the surface form of the protection layer having an arithmetical mean waviness Wa of from 0.05 to 0.3 μm and an average length WSm of profile elements of from 0.5 to 1.5 mm, which are obtained from a waviness profile obtained by filtering a coarse component with a λc profile filter of 0.25 mm and filtering a wavelength component longer than a waviness with a λf profile filter of 2.5 mm.
    • 一种图像形成装置,包括具有导电基板的图像承载部件,至少设有感光层和保护层,依次具有对图像承载部件的表面充电以在其上形成静电潜像的充电装置, 显影装置,其用含有调色剂的显影剂显影静电潜像,以获得显影的调色剂图像;清除装置,其去除残留在图像承载部件的表面上的调色剂;以及润滑剂涂料器,其将润滑剂材料施加到 图像承载部件的表面,保护层含有固化树脂和填料,保护层的表面形状具有0.05至0.3μm的算术平均波纹度Wa和0.5-1.5的轮廓元素的平均长度WSm mm,其从通过用λc轮廓f过滤粗分量获得的波纹曲线获得 0.25mm的滤波器,并且用2.5mm的λf轮廓滤波器滤波长于波纹的波长分量。
    • 4. 发明授权
    • Image forming apparatus, process cartridge, and image bearing member
    • 图像形成装置,处理盒和图像承载部件
    • US08273513B2
    • 2012-09-25
    • US12823865
    • 2010-06-25
    • Nozomu TamotoMitsuaki HiroseAkio KosugeMakoto Yasuda
    • Nozomu TamotoMitsuaki HiroseAkio KosugeMakoto Yasuda
    • G03G5/00
    • G03G5/14791G03G5/0614G03G5/071G03G5/147G03G5/14704G03G15/751
    • An image forming apparatus including an image bearing member having an electroconductive substrate on which are provided at least a photosensitive layer and a protection layer, in that sequence, a charging device that charges the surface of the image bearing member to form a latent electrostatic image thereon, a development device that develops the latent electrostatic image with a development agent containing toner to obtain a developed toner image, a cleaning device that removes toner remaining on the surface of the image bearing member and a lubricant material applicator that applies a lubricant material to the surface of the image bearing member, the protection layer containing a cured resin and a filler and the surface form of the protection layer having an arithmetical mean waviness Wa of from 0.05 to 0.3 μm and an average length WSm of profile elements of from 0.5 to 1.5 mm, which are obtained from a waviness profile obtained by filtering a coarse component with a λc profile filter of 0.25 mm and filtering a wavelength component longer than a waviness with a λf profile filter of 2.5 mm.
    • 一种图像形成装置,包括具有导电基板的图像承载部件,至少设有感光层和保护层,依次具有对图像承载部件的表面充电以在其上形成静电潜像的充电装置, 显影装置,其用含有调色剂的显影剂显影静电潜像,以获得显影的调色剂图像;清除装置,其去除残留在图像承载部件的表面上的调色剂;以及润滑剂涂料器,其将润滑剂材料施加到 图像承载部件的表面,保护层含有固化树脂和填料,保护层的表面形状具有0.05至0.3μm的算术平均波纹度Wa和0.5-1.5的轮廓元素的平均长度WSm mm,其从通过用λc轮廓f过滤粗分量获得的波纹曲线获得 0.25mm的滤波器,并且用2.5mm的λf轮廓滤波器滤波长于波纹的波长分量。
    • 7. 发明申请
    • IMAGE FORMING APPARATUS
    • 图像形成装置
    • US20150037049A1
    • 2015-02-05
    • US14325894
    • 2014-07-08
    • Emiko SHIRAISHITadashi KasaiMakoto YasudaYuichi AizawaMutsuki MorinagaHitoshi Yamamoto
    • Emiko SHIRAISHITadashi KasaiMakoto YasudaYuichi AizawaMutsuki MorinagaHitoshi Yamamoto
    • G03G15/08
    • G03G15/556G03G15/0121
    • An image forming apparatus includes a plurality of image bearing members, replaceable development units, replaceable toner replenishing members, toner supply units, and a control unit. The development units are each provided for a corresponding one of the plurality of image bearing members. The toner replenishing members are each provided for a corresponding one of the development units. The toner supply units are arranged between the respective toner replenishing members and the development units. The control unit causes the image forming apparatus to execute a toner supply unit cleaning mode to convey a last-used toner inside the toner supply unit into the development unit which is last used and to be replaced to empty the toner supply unit, when replacement of the development unit and the corresponding toner replenishing member is designated to use a toner of a type different from the last-used toner.
    • 图像形成装置包括多个图像承载部件,可替换的显影单元,可替换的调色剂补充部件,调色剂供应单元和控制单元。 显影单元各自设置用于多个图像承载部件中的对应的一个。 调色剂补充构件各自设置用于对应的一个显影单元。 调色剂供应单元布置在相应的调色剂补充构件和显影单元之间。 控制单元使图像形成设备执行调色剂供应单元清洁模式,以将最后使用的调色剂供应单元中的最后使用的调色剂输送到最后使用并被更换的显影单元,以便在更换 显影单元和相应的调色剂补充构件被指定为使用与最后使用的调色剂不同的类型的调色剂。
    • 9. 发明授权
    • Semiconductor memory device and fabrication process thereof
    • 半导体存储器件及其制造工艺
    • US08378426B2
    • 2013-02-19
    • US12068692
    • 2008-02-11
    • Makoto Yasuda
    • Makoto Yasuda
    • H01L21/70
    • G11C11/412G11C11/40H01L21/76816H01L21/76895H01L21/8238H01L27/0207H01L27/0629H01L27/105H01L27/11H01L27/1104H01L27/1112H01L27/1116H01L28/20
    • A SRAM includes a first CMOS inverter of first and second MOS transistors connected in series, a second CMOS inverter of third and fourth MOS transistors connected in series and forming a flip-flop circuit together with the first CMOS inverter, and a polysilicon resistance element formed on a device isolation region, each of the first and third MOS transistors is formed in a device region of a first conductivity type and includes a second conductivity type drain region at an outer side of a sidewall insulation film of the gate electrode with a larger depth than a drain extension region thereof, wherein a source region is formed deeper than a drain extension region, the polysilicon gate electrode has a film thickness identical to a film thickness of the polysilicon resistance element, the source region and the polysilicon resistance element are doped with the same dopant element.
    • SRAM包括串联连接的第一和第二MOS晶体管的第一CMOS反相器,串联连接的第三和第四MOS晶体管的第二CMOS反相器和与第一CMOS反相器一起形成触发器电路,以及形成的多晶硅电阻元件 在器件隔离区域上,第一和第三MOS晶体管中的每一个形成在第一导电类型的器件区域中,并且在栅电极的侧壁绝缘膜的外侧包括第二导电类型的漏极区,其具有较大的深度 其漏极延伸区域的漏极延伸区域形成为比漏极延伸区域更深的多晶硅栅电极的膜厚与多晶硅电阻元件的膜厚相同,源极区域和多晶硅电阻元件掺杂有 相同的掺杂剂元素。
    • 10. 发明申请
    • CAPACITOR AND METHOD FOR FABRICATIONG THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    • 电容器及其制造方法及半导体器件及其制造方法
    • US20110037110A1
    • 2011-02-17
    • US12912265
    • 2010-10-26
    • Makoto YasudaAkiyoshi WatanabeYoshihiro Matsuoka
    • Makoto YasudaAkiyoshi WatanabeYoshihiro Matsuoka
    • H01L29/94H01L21/02
    • H01L27/0629H01L27/0805H01L29/66181H01L29/94
    • The semiconductor device comprises a device isolation region 14 formed in a semiconductor substrate 10, a lower electrode 16 formed in a device region 12 defined by the device isolation region and formed of an impurity diffused layer, a dielectric film 18 of a thermal oxide film formed on the lower electrode, an upper electrode 20 formed on the dielectric film, an insulation layer 26 formed on the semiconductor substrate, covering the upper electrode, a first conductor plug 30a buried in a first contact hole 28a formed down to the lower electrode, and a second conductor plug 30b buried in a second contact hole 28b formed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode 20 is not formed in the device isolation region 14, whereby the short-circuit between the upper electrode 20 and the lower electrode 16 in the cavity can be prevented. Thus, a capacitor of high reliability can be provided.
    • 半导体器件包括形成在半导体衬底10中的器件隔离区域14,形成在由器件隔离区域限定并由杂质扩散层形成的器件区域12中的下电极16,形成有热氧化膜的电介质膜18 在下部电极上形成有形成在电介质膜上的上部电极20,形成在半导体衬底上的覆盖上部电极的绝缘层26,埋设在下部电极形成的第一接触孔28a中的第一导体插塞30a,以及 埋在第二接触孔28b中的第二导体插塞30b,该第二接触孔28b形成在上电极上,上电极未形成在器件隔离区中。 上部电极20不形成在器件隔离区域14中,从而能够防止上部电极20与下部电极16之间在空腔内的短路。 因此,可以提供高可靠性的电容器。