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1. 发明授权

US5106821A Process for forming thin oxide film 失效
标题翻译：薄氧化膜形成工艺
公开(公告)号：US5106821A
公开(公告)日：1992-04-21
申请号：US579862
申请日：1990-09-10
申请人： Norio Homma , Hiromi Takahashi , Shinji Kawamoto , Hideyuki Kondo , Tadataka Horishita
发明人： Norio Homma , Hiromi Takahashi , Shinji Kawamoto , Hideyuki Kondo , Tadataka Horishita
IPC分类号： C01B13/14 , C01G1/00 , C01G3/00 , C23C14/08 , C23C14/35 , H01B12/06 , H01B13/00 , H01J37/34 , H01L21/316 , H01L39/24
CPC分类号： H01J37/3473 , C23C14/087 , C23C14/352 , H01J37/3408 , H01L39/2435 , Y10S505/731
摘要： A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is higher than 13.56 MHz and provides a lower negative target self-bias voltage permitting improved film formation.
摘要翻译：根据使用氧化物靶的射频磁控溅射法，在适合于其上形成膜的下表面上形成薄氧化膜的方法。激发频率高于13.56MHz，并提供较低的负目标自偏压，从而可以改善成膜。

2. 发明授权

US5225393A Process for forming thin oxide film 失效
标题翻译：薄氧化膜形成工艺
公开(公告)号：US5225393A
公开(公告)日：1993-07-06
申请号：US819395
申请日：1992-01-10
申请人： Norio Homma , Hiromi Takahashi , Shinji Kawamoto , Hideyuki Kondo , Tadataka Morishita
发明人： Norio Homma , Hiromi Takahashi , Shinji Kawamoto , Hideyuki Kondo , Tadataka Morishita
IPC分类号： C23C14/08 , C23C14/35 , H01J37/34 , H01L39/24
CPC分类号： H01J37/3473 , C23C14/087 , C23C14/352 , H01J37/3408 , H01L39/2435 , Y10S505/731
摘要： A process for forming a thin oxide film on an underlying surface adapted for film formation thereon according to a radio frequency magnetron sputtering method using an oxide target(s). The excitation frequency is a frequency which is higher than 13.56 MHz and which provides a negative target self-bias voltage permitting of film formation.
摘要翻译：根据使用氧化物靶的射频磁控溅射法，在适合于其上形成膜的下表面上形成薄氧化膜的方法。激发频率是高于13.56MHz的频率，并且提供允许成膜的负目标自偏压。

3. 发明授权

US5747427A Process for forming a semiconductive thin film containing a junction 失效
标题翻译：用于形成含有结的半导体薄膜的工艺
公开(公告)号：US5747427A
公开(公告)日：1998-05-05
申请号：US638286
申请日：1996-04-26
申请人： Norio Homma , Tadataka Morishita
发明人： Norio Homma , Tadataka Morishita
IPC分类号： H01L39/22 , H01L39/24 , C23C14/34
CPC分类号： H01L39/225 , H01L39/2496
摘要： Disclosed is a method of forming a thin junction film including a first thin oxide flilm presenting a superconductivity and second thin oxide film presenting an insulator properties or possibly semiconductive properties with an improved production efficiency as well as improved film quality and characteristics. Employed are first and second targets each having substantially the same chemical composition excepting oxygen content. The first target is sputtered at a target cathode voltage of minus 100 V by the use of voltage derived from an external D.C. voltage source, thereby forming a first thin oxide film. Subsequently, the target is changed over to the second target while changing the target cathode voltage into self-bias voltage of minus 50 V without any change of the other film formation conditions. Through this change-over, the sputtering of the first target is successively followed by the sputtering of the second target without any interruption of time, to consequently form the second thin oxide film onto the first thin oxide film.
摘要翻译：公开了一种形成薄接合膜的方法，该薄接合膜包括具有超导性的第一薄氧化物薄膜和具有提高的生产效率以及改进的薄膜质量和特性的具有绝缘体性质或可能的半导体性质的第二薄氧化物薄膜。使用的是除了氧含量之外具有基本上相同的化学组成的第一和第二靶。通过使用从外部直流电压源得到的电压，将第一靶溅射在负100V的目标阴极电压，从而形成第一薄氧化膜。随后，在将目标阴极电压改变为负50V的自偏压的同时将目标切换到第二目标，而不会改变其它成膜条件。通过这种转换，第一靶的溅射依次是第二靶的溅射而不时间的中断，从而在第一薄氧化膜上形成第二薄氧化膜。

4. 发明授权

US5679625A Method of making an oxide superconducting thin film 失效
标题翻译：制造氧化物超导薄膜的方法
公开(公告)号：US5679625A
公开(公告)日：1997-10-21
申请号：US563905
申请日：1995-11-22
申请人： Wataru Ito , Tadataka Morishita , Norio Homma , Yukihisa Yoshida
发明人： Wataru Ito , Tadataka Morishita , Norio Homma , Yukihisa Yoshida
IPC分类号： C01G1/00 , C01G3/00 , C23C14/08 , C23C14/35 , C23C14/46 , C30B29/22 , H01L39/24 , C23C14/34
CPC分类号： C23C14/35 , C23C14/087 , C23C14/46 , H01L39/2435 , Y10S505/731
摘要： A method of making a superconducting thin film of a Y--Ba--Cu--O series material by using a diode parallel plate type sputtering apparatus including a vacuum chamber, a substrate disposed within the vacuum chamber and having a substantially flat surface on which the superconducting thin film is to be formed, and a plate-shaped target functioning as a cathode and disposed within the vacuum chamber to parallelly face to the flat surface of the substrate, the target being made of the same material as the superconducting thin film, a plasma gas being introduced into the vacuum chamber, and a voltage being applied between the cathode and the substrate, wherein the method comprises the steps of applying a high frequency voltage having a frequency higher than 40 MHz between the cathode and the substrate to generate plasma of the introduced gas, superimposing a DC voltage (V) on the high frequency voltage in a polarity that the cathode becomes negative, and setting the DC voltage at a value where the DC voltage is substantially unchanged with variation of a cathode current flowing through the target when adjusting the DC voltage and controlling a value of the DC current while maintaining the DC voltage substantially at the set value.
摘要翻译：通过使用包括真空室的二极管平行板型溅射装置制造Y-Ba-Cu-O系材料的超导薄膜的方法，设置在真空室内的基板，并具有基本平坦的表面，超导要形成薄膜，并且一个板状靶用作阴极并且设置在真空室内以平行地面对基板的平坦表面，靶由与超导薄膜相同的材料制成，等离子体气体被引入真空室中，并且施加在阴极和衬底之间的电压，其中该方法包括在阴极和衬底之间施加频率高于40MHz的高频电压以产生等离子体的步骤引入气体，以与阴极变为负极性的高频电压叠加直流电压（V），将直流电压设定为当调节直流电压并控制直流电流的值同时保持直流电压基本上处于设定值时，直流电压随着流经目标的阴极电流的变化而基本上不变。

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