会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 8. 发明授权
    • Bone-forming graft
    • 骨形成移植物
    • US5830493A
    • 1998-11-03
    • US817409
    • 1997-03-25
    • Shoji YokotaSeitaro ShimokawaRitsu SonoharaAkira OkadaKoichiro Takahashi
    • Shoji YokotaSeitaro ShimokawaRitsu SonoharaAkira OkadaKoichiro Takahashi
    • A61L27/18A61L27/20A61L27/22A61L27/44A61L27/54A61L27/56A61F2/00
    • A61L27/44A61L27/18A61L27/20A61L27/22A61L27/54A61L27/56A61L2300/252A61L2300/414A61L2300/602A61L2430/02
    • A bone-forming graft that includes a bone morphogenetic protein (BMP) carried on a composite porous body. The composite porous body has a porous frame of a bioabsorbable hydrophilic material and a surface layer of a bioabsorbable polymer material. In particular, the present invention relates to a bone-forming graft in which the bioabsorbable hydrophilic material is one or more compounds selected from a group consisting of gelatin, hyaluronic acid, a hyaluronic acid derivative, collagen, a collagen derivative, chitosan, a chitosan derivative, and triethanolamine alginate. The bioabsorbable polymeric material is one or more compounds selected from a group consisting of a polylactic acid, a copolymer of a polylactic acid and a polyglycolic acid, and a copolymer of poly�bis(p-carboxyphenoxy)propane!anhydride and sebacic acid. The graft has excellent formability and workability and has an internal structure suitable for in vivo bone formation. Bone formation occurs not only at the periphery of the graft but also within the graft.
    • PCT No.PCT / JP95 / 01970。 371日期1997年3月25日 102(e)1997年3月25日PCT PCT 1995年9月28日PCT公布。 公开号WO96 / 10426 日期1996年4月11日一种骨形成移植物,其包括承载在复合多孔体上的骨形态发生蛋白(BMP)。 复合多孔体具有生物可吸收亲水材料的多孔框架和生物可吸收聚合物材料的表面层。 特别地,本发明涉及一种成骨移植物,其中生物可吸收亲水材料是一种或多种选自明胶,透明质酸,透明质酸衍生物,胶原,胶原衍生物,壳聚糖,壳聚糖 衍生物和海藻酸三乙醇胺。 生物可吸收聚合物材料是一种或多种选自聚乳酸,聚乳酸和聚乙醇酸的共聚物以及聚[双(对 - 羧基苯氧基)丙烷]酐和癸二酸的共聚物的化合物。 移植物具有优异的成形性和可加工性,并且具有适于体内骨形成的内部结构。 骨形成不仅发生在移植物的周边,而且在移植物内。
    • 9. 发明授权
    • Locking assembly for a metal watchband
    • 金属表带锁紧组件
    • US06308382B1
    • 2001-10-30
    • US09405563
    • 1999-09-24
    • Koichiro TakahashiKai Cheung Ho
    • Koichiro TakahashiKai Cheung Ho
    • A44B1100
    • A44C5/24Y10T24/2155Y10T24/2166Y10T24/4782
    • The present invention provides a clasp assembly for a metallic watch chain, mainly comprising: an inner bend plate, an outer bend plate, and a clasp cap. Said inner bend plate can fit into the narrow groove of the outer bend plate. A convex clasp is disposed on the inner bend plate and corresponds to a concave clasp disposed on the outer bend plate in shape, position and size, and the two clasps engage with each other. The lock and release of the convex and concave clasps causes the lock and release of the watch chain. The clasp cap pivotably connects with the inner bend plate through screws. The hole of the clasp cap connects with the watch chain, and the outer bend plate connects with the watch chain through the cylindrical bodies at the left end. The structure of the clasp assembly is simple and is easy to use.
    • 本发明提供了一种用于金属手表链的扣件组件,主要包括:内弯板,外弯板和扣帽。 所述内弯板可以装配到外弯板的窄槽中。 凸形扣具设置在内弯板上,对应于形状,位置和尺寸设置在外弯板上的凹扣,并且两扣相互啮合。 凸形和凹形扣的锁定和释放导致手表链的锁定和释放。 扣环通过螺丝与内弯板可枢转地连接。 扣帽的孔与表链连接,外弯板通过左端的圆柱体与表链连接。 扣环组合结构简单,使用方便。
    • 10. 发明授权
    • Epitaxial wafer for GaP pure green light-emitting diode and GaP pure
green light-emitting diode
    • GaP纯绿色发光二极管和GaP纯绿色发光二极管的外延晶片
    • US5886369A
    • 1999-03-23
    • US965192
    • 1997-11-06
    • Koichi HasegawaKoichiro Takahashi
    • Koichi HasegawaKoichiro Takahashi
    • H01L21/208H01L33/30H01L33/40H01L27/15
    • H01L33/30H01L33/0062H01L33/025
    • An epitaxial wafer for a GaP pure green light emitting diode includes an n-type single crystal GaP substrate formed in order thereon with a first n-type GaP epitaxial layer, a second n-type GaP epitaxial layer and a p-type GaP epitaxial layer. The p-type GaP epitaxial layer has a sulfur concentration of not greater than 1.times.10.sup.17 cm.sup.31 3, the second n-type GaP epitaxial layer has a carrier concentration on a side thereof interfacing with the p-type GaP epitaxial layer of 0.5-5.times.10.sup.17 cm.sup.-3, and the p-type GaP epitaxial layer has a carrier concentration on a side thereof interfacing with the second n-type GaP epitaxial layer that is 1-10.times.10.sup.17 cm.sup.-3 and is not less than twice the carrier concentration of the second n-type GaP epitaxial layer on the side thereof interfacing with the p-type GaP epitaxial layer. A GaP pure green light-emitting diode exhibiting high brightness includes the epitaxial wafer, an n-type electrode provided on a back surface of the single crystal substrate and a p-type electrode provided on the upper surface of the p-type GaP epitaxial layer.
    • 用于GaP纯绿色发光二极管的外延晶片包括依次形成有第一n型GaP外延层,第二n型GaP外延层和p型GaP外延层的n型单晶GaP衬底 。 p型GaP外延层的硫浓度不大于1×10 17 cm -3 3 3,第二n型GaP外延层在其与p型GaP外延层接合的一侧上具有0.5-5×10 17 cm -1的GaP外延层, 3,并且p型GaP外延层在其与第二n型GaP外延层接合的一侧上的载流子浓度为1-10×10 17 cm -3,并且不小于第二n-型GaP外延层的载流子浓度的两倍, GaP外延层与p型GaP外延层接合。 显示高亮度的GaP纯绿色发光二极管包括外延晶片,设置在单晶衬底的背面上的n型电极和设置在p型GaP外延层的上表面上的p型电极 。