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1. 发明授权

US08476673B2 Diode 有权
标题翻译：二极管
公开(公告)号：US08476673B2
公开(公告)日：2013-07-02
申请号：US13296832
申请日：2011-11-15
申请人： Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Shinya Sakurai , Takashi Suzuki
发明人： Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Shinya Sakurai , Takashi Suzuki
IPC分类号： H01L29/861 , H01L29/747 , H01L31/107
CPC分类号： H01L21/76283 , H01L27/0814 , H01L27/1203 , H01L29/0619 , H01L29/0649 , H01L29/08 , H01L29/405 , H01L29/8611
摘要： A diode has a semiconductor layer and cathode and anode electrodes on a surface of the semiconductor layer. The semiconductor layer has cathode and anode regions respectively contacting the cathode and anode electrodes. The anode region has a first diffusion region having high surface concentration, a second diffusion region having intermediate surface concentration, and a third diffusion region having low surface concentration. The first diffusion region is covered with the second and third diffusion regions. The second diffusion region has a first side surface facing the cathode region, a second side surface opposite to the cathode region, and a bottom surface extending between the first and second side surfaces. The third diffusion region covers at least one of the first corner part connecting the first side surface with the bottom surface and the second corner part connecting the second side surface with the bottom surface.
摘要翻译：二极管在半导体层的表面上具有半导体层和阴极和阳极电极。半导体层具有分别与阴极和阳极电极接触的阴极和阳极区域。阳极区域具有表面浓度高的第一扩散区域，具有中间表面浓度的第二扩散区域和具有低表面浓度的第三扩散区域。第一扩散区被第二和第三扩散区覆盖。第二扩散区域具有面对阴极区域的第一侧表面，与阴极区域相对的第二侧表面和在第一和第二侧表面之间延伸的底表面。第三扩散区域覆盖连接第一侧表面与底表面的第一角部和将第二侧表面与底表面连接的第二角部中的至少一个。

2. 发明申请

US20120139079A1 DIODE 有权
标题翻译：二极管
公开(公告)号：US20120139079A1
公开(公告)日：2012-06-07
申请号：US13296832
申请日：2011-11-15
申请人： Norihito TOKURA , Satoshi Shiraki , Shigeki Takahashi , Shinya Sakurai , Takashi Suzuki
发明人： Norihito TOKURA , Satoshi Shiraki , Shigeki Takahashi , Shinya Sakurai , Takashi Suzuki
IPC分类号： H01L29/47
CPC分类号： H01L21/76283 , H01L27/0814 , H01L27/1203 , H01L29/0619 , H01L29/0649 , H01L29/08 , H01L29/405 , H01L29/8611
摘要： A diode has a semiconductor layer and cathode and anode electrodes on a surface of the semiconductor layer. The semiconductor layer has cathode and anode regions respectively contacting the cathode and anode electrodes. The anode region has a first diffusion region having high surface concentration, a second diffusion region having intermediate surface concentration, and a third diffusion region having low surface concentration. The first diffusion region is covered with the second and third diffusion regions. The second diffusion region has a first side surface facing the cathode region, a second side surface opposite to the cathode region, and a bottom surface extending between the first and second side surfaces. The third diffusion region covers at least one of the first corner part connecting the first side surface with the bottom surface and the second corner part connecting the second side surface with the bottom surface.
摘要翻译：二极管在半导体层的表面上具有半导体层和阴极和阳极电极。半导体层具有分别与阴极和阳极电极接触的阴极和阳极区域。阳极区域具有表面浓度高的第一扩散区域，具有中间表面浓度的第二扩散区域和具有低表面浓度的第三扩散区域。第一扩散区被第二和第三扩散区覆盖。第二扩散区域具有面对阴极区域的第一侧表面，与阴极区域相对的第二侧表面和在第一和第二侧表面之间延伸的底表面。第三扩散区域覆盖连接第一侧表面与底表面的第一角部和将第二侧表面与底表面连接的第二角部中的至少一个。

3. 发明授权

US09240445B2 Lateral semiconductor device 有权
标题翻译：侧面半导体器件
公开(公告)号：US09240445B2
公开(公告)日：2016-01-19
申请号：US14113419
申请日：2012-05-10
申请人： Takashi Suzuki , Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Youichi Ashida , Akira Yamada
发明人： Takashi Suzuki , Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Youichi Ashida , Akira Yamada
IPC分类号： H01L23/62 , H01L29/06 , H01L29/40 , H01L29/861
CPC分类号： H01L29/063 , H01L29/0692 , H01L29/402 , H01L29/404 , H01L29/405 , H01L29/861
摘要： A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.
摘要翻译：横向半导体器件包括半导体层，绝缘层和电阻场板。半导体层包括在表面部分处的第一半导体区域和第二半导体区域，并且第二半导体区域在第一半导体区域周围形成电路。绝缘层形成在半导体层的表面上并且设置在第一和第二半导体区之间。电阻场板形成在绝缘层的表面上。在第一和第二半导体区域之间，第一部分和第二部分沿着围绕第一半导体区域的圆周方向彼此相邻。电阻场板包括分别形成在第一和第二部分中的第一和第二电阻场板部分，并且第一和第二电阻场板部分彼此分离。

4. 发明申请

US20140048911A1 LATERAL SEMICONDUCTOR DEVICE 有权
标题翻译：横向半导体器件
公开(公告)号：US20140048911A1
公开(公告)日：2014-02-20
申请号：US14113419
申请日：2012-05-10
申请人： Takashi Suzuki , Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Youichi Ashida , Akira Yamada
发明人： Takashi Suzuki , Norihito Tokura , Satoshi Shiraki , Shigeki Takahashi , Youichi Ashida , Akira Yamada
IPC分类号： H01L29/06
CPC分类号： H01L29/063 , H01L29/0692 , H01L29/402 , H01L29/404 , H01L29/405 , H01L29/861
摘要： A lateral semiconductor device includes a semiconductor layer, an insulating layer, and a resistive field plate. The semiconductor layer includes a first semiconductor region and a second semiconductor region at a surface portion, and the second semiconductor region makes a circuit around the first semiconductor region. The insulating layer is formed on a surface of the semiconductor layer and is disposed between the first and second semiconductor regions. The resistive field plate is formed on a surface of the insulating layer. Between the first and second semiconductor regions, a first section and a second section are adjacent to each other along a circumferential direction around the first semiconductor region. The resistive field plate includes first and second resistive field plate sections respectively formed in the first and second sections, and the first and second resistive field plate sections are separated from each other.
摘要翻译：横向半导体器件包括半导体层，绝缘层和电阻场板。半导体层包括在表面部分处的第一半导体区域和第二半导体区域，并且第二半导体区域在第一半导体区域周围形成电路。绝缘层形成在半导体层的表面上并且设置在第一和第二半导体区之间。电阻场板形成在绝缘层的表面上。在第一和第二半导体区域之间，第一部分和第二部分沿着围绕第一半导体区域的圆周方向彼此相邻。电阻场板包括分别形成在第一和第二部分中的第一和第二电阻场板部分，并且第一和第二电阻场板部分彼此分离。

5. 发明授权

US06982459B2 Semiconductor device having a vertical type semiconductor element 有权
标题翻译：具有垂直型半导体元件的半导体器件
公开(公告)号：US06982459B2
公开(公告)日：2006-01-03
申请号：US10634819
申请日：2003-08-06
申请人： Takashi Suzuki , Tsutomu Uesugi , Norihito Tokura
发明人： Takashi Suzuki , Tsutomu Uesugi , Norihito Tokura
IPC分类号： H01L29/76
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/7813
摘要： A vertical type MOS field effect transistor has a super junction structure between a source electrode and an N+-type drain region. The super junction structure is constituted by a plurality of P-type single crystal silicon regions and a plurality of N-type single crystal silicon regions. Each of the plurality of P-type single crystal silicon regions and each of the plurality of N-type single crystal silicon regions are arrayed alternately. The super junction has two parts, that is, a cell forming region where a MOS structure is disposed and a peripheral region located at a periphery of the cell forming region. The source electrode contacts one of the P-type single crystal silicon regions in the peripheral region while disposed away from an end portion of the peripheral region that is located at an outermost in the peripheral region.
摘要翻译：垂直型MOS场效应晶体管在源电极和N + +型漏极区之间具有超结结构。超结结构由多个P型单晶硅区域和多个N型单晶硅区域构成。多个P型单晶硅区域和多个N型单晶硅区域中的每一个交替排列。超结具有两部分，即设置MOS结构的电池形成区域和位于电池形成区域周边的周边区域。源电极接触周边区域中的P型单晶硅区域中的一个，同时远离位于周边区域中最外侧的周边区域的端部设置。

6. 发明授权

US06639260B2 Semiconductor device having a vertical semiconductor element 有权
标题翻译：具有垂直半导体元件的半导体器件
公开(公告)号：US06639260B2
公开(公告)日：2003-10-28
申请号：US10015917
申请日：2001-12-17
申请人： Takashi Suzuki , Tsutomu Uesugi , Norihito Tokura
发明人： Takashi Suzuki , Tsutomu Uesugi , Norihito Tokura
IPC分类号： H01L2976
CPC分类号： H01L29/7811 , H01L29/0634 , H01L29/0696 , H01L29/7813
摘要： A vertical type MOS field effect transistor has a super junction structure between a source electrode and an N+-type drain region. The super junction structure is constituted by a plurality of P-type single crystal silicon regions and a plurality of N-type single crystal silicon regions. Each of the plurality of P-type single crystal silicon regions and each of the plurality of N-type single crystal silicon regions are arrayed alternately. The super junction has two parts, that is, a cell forming region where a MOS structure is disposed and a peripheral region located at a periphery of the cell forming region. The source electrode contacts one of the P-type single crystal silicon regions in the peripheral region while disposed away from an end portion of the peripheral region that is located at an outermost in the peripheral region.
摘要翻译：垂直型MOS场效应晶体管在源电极和N +型漏极区之间具有超结结构。超结结构由多个P型单晶硅区域和多个N型单晶硅区域构成。多个P型单晶硅区域和多个N型单晶硅区域中的每一个交替排列。超结具有两部分，即设置MOS结构的电池形成区域和位于电池形成区域周边的周边区域。源电极接触周边区域中的P型单晶硅区域中的一个，同时远离位于周边区域中最外侧的周边区域的端部设置。

7. 发明申请

US20210157818A1 Computerized data compression and analysis using potentially non-adjacent pairs 有权
公开(公告)号：US20210157818A1
公开(公告)日：2021-05-27
申请号：US16951954
申请日：2020-11-18
申请人： Takashi Suzuki
发明人： Takashi Suzuki
IPC分类号： G06F16/25 , G06F16/23 , H03M7/30
摘要： A computerized method of compressing symbolic information organized into a plurality of documents, each document having a plurality of symbols, includes: (i) automatically identifying a plurality of sequential and non-sequential symbol pairs in an input document; (ii) counting the number of appearances of each unique symbol pair; and (iii) producing a compressed document that includes a replacement symbol at each position associated with one of the plurality of symbol pairs, at least one of which corresponds to a non-sequential symbol pair. For each non-sequential pair the compressed document includes corresponding indicia indicating a distance between locations of the non-sequential symbols of the pair in the input document. In some instances the plurality of symbol pairs includes only those pairs of non-sequential symbols for which the distance between locations of the non-sequential symbols of the pair in the input document is less than a numeric distance cap.

8. 发明授权

US10387377B2 Computerized methods of data compression and analysis 有权
公开(公告)号：US10387377B2
公开(公告)日：2019-08-20
申请号：US15600495
申请日：2017-05-19
申请人： Takashi Suzuki
发明人： Takashi Suzuki
IPC分类号： G06F16/00 , G06F16/174 , G06F16/22 , G06F16/951 , H03M7/30
摘要： A computerized method and apparatus compresses symbolic information, such as text. Symbolic information is compressed by recursively identifying pairs of symbols (e.g., pairs of words or characters) and replacing each pair with a respective replacement symbol. The number of times each symbol pair appears in the uncompressed text is counted, and pairs are only replaced if they appear more than a threshold number of times. In recursive passes, each replaced pair can include a previously substituted replacement symbol. The method and apparatus can achieve high compression especially for large datasets. Metadata, such as the number of times each pair appears, generated during compression of the documents can be used to analyze the documents and find similarities between two documents.

9. 发明授权

US09669678B2 Vehicle state detection device 有权
公开(公告)号：US09669678B2
公开(公告)日：2017-06-06
申请号：US14649433
申请日：2012-12-11
申请人： Fumito Kurata , Takashi Suzuki
发明人： Fumito Kurata , Takashi Suzuki
IPC分类号： B60G17/019 , G01D5/12 , G01B7/30 , B60G17/0195 , B60W40/068 , B60G17/0165 , B60G17/018 , B60G17/06 , B60W40/06 , B60K7/00
CPC分类号： B60G17/019 , B60G17/0165 , B60G17/018 , B60G17/0195 , B60G17/06 , B60G2400/052 , B60G2400/0521 , B60G2400/0522 , B60G2500/10 , B60K7/0007 , B60W40/06 , B60W40/068 , B60W2510/082 , B60W2520/28 , G01B7/30 , G01D5/12
摘要： An unsprung state detection part (140) calculates a variation amount X (=|φ−φ′|), which is a magnitude of a difference between a detected angle φ output from a resolver rotational angle sensor (40) for detecting a rotational angle of an in-wheel motor (30) and an estimated angle φ′ of a motor rotational angle (S11 to S13). The estimated angle φ′ can be calculated by adding an estimated angle of the rotation of the motor (30) in one calculation cycle to a detected angle φn−1 of the previous calculation cycle. When the variation amount X is more than a road surface determination threshold Xref, the unsprung state detection part (140) determines that the travel road on which a vehicle (1) is traveling is a rough road (S14, S15). As a result, the road surface determination can be made by using the rotational angle sensor (40).

10. 发明授权

US09608491B2 Stator, motor, blower, and stator manufacturing method 有权
公开(公告)号：US09608491B2
公开(公告)日：2017-03-28
申请号：US14387771
申请日：2012-04-18
申请人： Masaki Kameyama , Shinya Oishi , Manabu Deguchi , Toshihiko Mizutani , Takayuki Onihashi , Katsuki Fukuyo , Takashi Suzuki
发明人： Masaki Kameyama , Shinya Oishi , Manabu Deguchi , Toshihiko Mizutani , Takayuki Onihashi , Katsuki Fukuyo , Takashi Suzuki
IPC分类号： H02K3/34 , H02K3/50 , H02K3/52 , H02K1/14 , H02K15/095 , H02K3/38 , H02K15/02
CPC分类号： H02K3/38 , H02K1/148 , H02K3/345 , H02K3/522 , H02K15/022 , H02K15/095 , H02K2203/12 , Y10T29/49009
摘要： A stator includes a first teeth unit including a first insulator having an annular first crossover wire guide and a plurality of first winding units radially provided at regular intervals on an outer circumference of the first crossover wire guide to cover teeth of one phase group of an alternating current, the teeth of the one phase group having upper halves fitted to the first winding units, a third insulator that covers lower halves of the teeth, and a winding wire of one phase wound around the teeth of the one phase group, a second teeth unit having an identical configuration to that of the first teeth unit in which a winding wire of the other phase is wound in a concentrated manner, with second winding units inserted between adjacent ones of the first winding units, and an annular yoke including a plurality of recesses at regular intervals.

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