专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110265595A1 SHIFT LEVER APPARATUS 审中-公开
标题翻译：移动杠杆装置
公开(公告)号：US20110265595A1
公开(公告)日：2011-11-03
申请号：US13093893
申请日：2011-04-26
申请人： Norihito SHIOJI , Taizo YASUDA
发明人： Norihito SHIOJI , Taizo YASUDA
IPC分类号： F16H59/04
CPC分类号： F16H59/0217 , F16H59/0278 , Y10T74/2014
摘要： A pair of wiring structures 9 and 9 configured to transmit a control signal from an operating switch on an upper portion of a shift lever 3 to a vehicle body side respectively include connection terminals 91 to be attached to a framework portion of a knob 4. Each connection terminal 91 includes: a connecting portion 93 on an end of the connection terminal 91, the connecting portion 93 being connectable to an opponent terminal; a hook portion 95 to which an end portion 90a of a lead wire 90 is to be fixed, the hook portion 95 located on another end of the connection terminal 91; and an insertion portion 92 and a position regulating portion 94 between the connecting portion 93 and the hook portion 95, the insertion portion 92 being inserted into an insertion hole in a bracket 50, the position regulating portion 94 being configured to regulate a position of the insertion portion 92 in the inserting direction.
摘要翻译：配置成将来自变速杆3的上部的操作开关的控制信号传递到车体侧的一对配线结构体9,9分别包括要连接到旋钮4的框架部分的连接端子91。连接端子91包括：在连接端子91的端部上的连接部分93，连接部分93可连接到对方端子; 引线90的端部90a要固定的钩部95，位于连接端子91另一端的钩部95; 以及在连接部分93和钩部分95之间的插入部分92和位置限制部分94，插入部分92插入到支架50中的插入孔中，位置限制部分94被配置成调节插入部92。

2. 发明申请

US20100151685A1 METHODS OF REMOVING MULTI-LAYERED STRUCTURE AND OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：移除多层结构和制造半导体器件的方法
公开(公告)号：US20100151685A1
公开(公告)日：2010-06-17
申请号：US12635037
申请日：2009-12-10
申请人： Taizo YASUDA
发明人： Taizo YASUDA
IPC分类号： H01L21/306
CPC分类号： H01L21/31116 , H01L21/02079 , H01L21/0271 , H01L21/31138
摘要： A method of removing a multi-layered structure includes the following processes. A semiconductor substrate is prepared. The semiconductor substrate has a multi-layered structure including a first film over the semiconductor substrate, a second film on the first film, and a mask pattern film on the second film. Then, the mask pattern film is removed. Then, the second film is removed by etching the second film with a first etching selectivity of the second film to the first film. The first etching selectivity is greater than a second etching selectivity of the second film to the first film with which the second film is patterned by etching using the mask pattern film. Then, the third film is removed.
摘要翻译：一种去除多层结构的方法包括以下过程。制备半导体衬底。半导体衬底具有包括半导体衬底上的第一膜，第一膜上的第二膜和第二膜上的掩模图案膜的多层结构。然后，去除掩模图案膜。然后，通过用第二膜的第一蚀刻选择性蚀刻第二膜来去除第二膜。第一蚀刻选择性大于第二膜对第一膜的第二蚀刻选择性，通过使用掩模图案膜通过蚀刻来使第二膜被图案化。然后，删除第三片。

3. 发明申请

US20080090409A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE INCLUDING INTERCONNECTIONS HAVING A SMALLER WIDTH 失效
标题翻译：制造半导体器件的方法，包括具有较小宽度的互连
公开(公告)号：US20080090409A1
公开(公告)日：2008-04-17
申请号：US11870045
申请日：2007-10-10
申请人： Taizo YASUDA
发明人： Taizo YASUDA
IPC分类号： H01L21/4763
CPC分类号： H01L21/76838 , H01L27/10885 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes the steps of forming an interconnection layer including a top tungsten layer, forming a mask pattern on the tungsten layer, nitriding a portion of the tungsten layer in a plasma nitriding process to form a tungsten nitride layer, etching the tungsten nitride layer while leaving the mask pattern on the tungsten layer, and patterning the interconnection layer by using the mask pattern as an etching mask.
摘要翻译：一种制造半导体器件的方法包括以下步骤：形成包括顶钨层的互连层，在钨层上形成掩模图案，在等离子体氮化处理中氮化一部分钨层以形成氮化钨层，蚀刻同时将掩模图案留在钨层上，并且通过使用掩模图案作为蚀刻掩模来图案化互连层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式