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1. 发明授权

US5079606A Thin-film memory element 失效
标题翻译：薄膜记忆元素
公开(公告)号：US5079606A
公开(公告)日：1992-01-07
申请号：US467736
申请日：1990-01-19
申请人： Nobuyuki Yamamura , Shinichi Shimomaki , Hideaki Shimizu , Hiroshi Matsumoto , Naoki Kato
发明人： Nobuyuki Yamamura , Shinichi Shimomaki , Hideaki Shimizu , Hiroshi Matsumoto , Naoki Kato
IPC分类号： G11C16/04
CPC分类号： G11C16/0466
摘要： A thin-film memory element made by the technique of forming thin film and functioning as a thin-film transistor. The memory element has two gate-insulating films, and two gate electrodes formed on the gate-insulating films, respectively. The first gate-insulating film can accumulate electrical charge, whereas the second gate-insulating film cannot. The gate electrode on the first gate-insulating film is used as write/erase electrode, and the gate electrode on the second gate-insulating film is used as read electrode. Since the memory element has two electrodes, one for writing or erasing data, and the other for reading data, its threshold voltage remains unchanged. Hence, data can be read from the thin-film memory element for a virtually indefinitely long period of time.

2. 发明授权

US5196912A Thin film transistor having memory function and method for using thin film transistor as memory element 失效
标题翻译：具有记忆功能的薄膜晶体管和使用薄膜晶体管作为存储元件的方法
公开(公告)号：US5196912A
公开(公告)日：1993-03-23
申请号：US668741
申请日：1991-03-13
申请人： Hiroshi Matsumoto , Hiroyasu Yamada , Nobuyuki Yamamura , Shinichi Shimomaki , Naohiro Konya , Kyuya Baba
发明人： Hiroshi Matsumoto , Hiroyasu Yamada , Nobuyuki Yamamura , Shinichi Shimomaki , Naohiro Konya , Kyuya Baba
IPC分类号： H01L27/115 , H01L29/792
CPC分类号： H01L27/115 , H01L29/792
摘要： A memory element is formed of a thin film transistor. The thin film transistor has a semiconductor layer, a source electrode electrically connected to the semiconductor layer, a drain electrode electrically connected to the semiconductor layer and formed separately from the source electrode, a gate electrode for controlling formation of a channel of the semiconductor layer, and a gate insulation film for isolating the gate electrode and the semiconductor layer from each other and causing a hysteresis in the relation between the drain current and the gate circuit. The insulation film is a silicon nitride film whose composition ratio of silicon to nitrogen is in a range of approx. 0.85 to 1.1. According to this invention, the relation between the gate voltage and the drain current can be set to have a hysteresis. Therefore, the thin film transistor can be used as a memory element. Further, according to this invention, data can be written, erased and read out by selectively applying an electric field to the gate insulation film. Therefore, the thin film transistor can be used as a memory element.
摘要翻译：存储元件由薄膜晶体管形成。薄膜晶体管具有半导体层，与半导体层电连接的源电极，与半导体层电连接并与源极分开形成的漏电极，用于控制半导体层的沟道的形成的栅电极，以及用于将栅极电极和半导体层彼此隔离并且在漏极电流和栅极电路之间的关系中产生滞后的栅极绝缘膜。绝缘膜是硅与氮的组成比在大约的范围内的氮化硅膜。 0.85〜1.1。根据本发明，可以将栅极电压和漏极电流之间的关系设定为滞后。因此，薄膜晶体管可以用作存储元件。此外，根据本发明，可以通过选择性地向栅极绝缘膜施加电场来写入，擦除和读出数据。因此，薄膜晶体管可以用作存储元件。

3. 发明授权

US08467022B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08467022B2
公开(公告)日：2013-06-18
申请号：US12571654
申请日：2009-10-01
申请人： Shinichi Shimomaki
发明人： Shinichi Shimomaki
IPC分类号： G02F1/1337
CPC分类号： G02F1/134363 , G02F2001/134318 , G02F2001/134372
摘要： A liquid crystal display device comprising: a liquid crystal layer provided between a first substrate and a second substrate; first electrodes, which are formed above the first substrate as a first layer, each first electrode having a side which extends to incline toward a first direction in which the data line extends, that is, second direction, each first electrode electrically connected to corresponding data line via corresponding switching device; and a second electrode, which is formed above the first substrate as a second layer, having a slit in each part of the area overlapping with corresponding first electrode, at least one side of the slit extending in the second direction.
摘要翻译：一种液晶显示装置，包括：液晶层，设置在第一基板和第二基板之间; 第一电极，其形成在作为第一层的第一基板上方，每个第一电极具有朝向数据线延伸的第一方向（即第二方向）延伸的一侧，每个第一电极电连接到相应的数据通过相应的开关装置; 以及第二电极，其形成在作为第二层的第一基板上方，在所述区域的每个部分中具有与相应的第一电极重叠的狭缝，所述狭缝的至少一侧沿第二方向延伸。

4. 发明授权

US08395717B2 Liquid crystal display apparatus 有权
标题翻译：液晶显示装置
公开(公告)号：US08395717B2
公开(公告)日：2013-03-12
申请号：US13159669
申请日：2011-06-14
申请人： Yayoi Nakamura , Shinichi Shimomaki
发明人： Yayoi Nakamura , Shinichi Shimomaki
IPC分类号： G02F1/136
CPC分类号： G02F1/136209 , G02F1/136213 , G02F2001/136218 , H01L27/1255 , H01L29/78633
摘要： A liquid crystal display element includes a thin-film transistor in which one of source and drain electrodes is connected to a pixel electrode, and an auxiliary capacitance electrode that forms an auxiliary capacitance together with the pixel electrode and at least partially overlaps with the thin-film transistor. The thin-film transistor includes a semiconductor layer, an anti-etching layer that is arranged in contact with the semiconductor layer and made of an insulative material, and a gate electrode that is arranged to interpose the semiconductor layer between the gate electrode itself and the anti-etching layer. A region in the auxiliary capacitance electrode that overlaps with the gate electrode has a length in a direction parallel to a channel length direction of the thin-film transistor that is shorter than a length of the gate electrode in this direction and longer than a length of the anti-etching layer in this direction.
摘要翻译：液晶显示元件包括其中源电极和漏极之一连接到像素电极的薄膜晶体管，以及与像素电极一起形成辅助电容并与薄膜晶体管至少部分重叠的辅助电容电极，薄膜晶体管。薄膜晶体管包括半导体层，与半导体层接触并由绝缘材料制成的抗蚀刻层，以及栅电极，其设置成将半导体层插入在栅电极本身和防蚀层。辅助电容电极中的与栅电极重叠的区域在与薄膜晶体管的沟道长度方向平行的方向上的长度比该栅极电极在该方向上的长度短，且长于该抗蚀刻层在该方向上。

5. 发明授权

US5821137A Thin film semiconductor device including a driver and a matrix circuit 失效
公开(公告)号：US5821137A
公开(公告)日：1998-10-13
申请号：US441395
申请日：1995-05-15
申请人： Haruo Wakai , Shinichi Shimomaki , Tatuya Miyakawa
发明人： Haruo Wakai , Shinichi Shimomaki , Tatuya Miyakawa
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786
CPC分类号： H01L29/78696 , H01L27/1214 , H01L29/66757 , H01L29/78609
摘要： A thin film transistor including a thin semiconductor film which has a central portion as a channel region, with the side portions of the semiconductor film except for the channel region being a source and a drain regions which includes n-type impurities such as phosphorus ions of high concentration (3.times.10.sup.15 atoms/cm.sup.2), and a low concentration region provided between the channel region and each of the source and drain regions including p-type impurities such as boron ions of a low concentration (1.times.10.sup.13 atoms/cm.sup.2) whereby the low concentration region serves to reduce the off current.

6. 发明授权

US5477073A Thin film semiconductor device including a driver and a matrix circuit 失效
标题翻译：包括驱动器和矩阵电路的薄膜半导体器件
公开(公告)号：US5477073A
公开(公告)日：1995-12-19
申请号：US287849
申请日：1994-08-09
申请人： Haruo Wakai , Shinichi Shimomaki , Tatuya Miyakawa
发明人： Haruo Wakai , Shinichi Shimomaki , Tatuya Miyakawa
IPC分类号： H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/04
CPC分类号： H01L29/78696 , H01L27/1214 , H01L29/66757 , H01L29/78609
摘要： A thin film transistor including a thin semiconductor film which has a central portion as a channel region, with the side portions of the semiconductor film except for the channel region being a source and a drain regions which includes n-type impurities such as phosphorus ions of high concentration (3.times.10.sup.15 atoms/cm.sup.2), and a low concentration region provided between the channel region and each of the source and drain regions including p-type impurities such as boron ions of a low concentration (1.times.10.sup.13 atoms/cm.sup.2) whereby the low concentration region serves to reduce the off current.
摘要翻译：一种薄膜晶体管，包括具有作为沟道区域的中心部分的薄半导体膜，除了沟道区域以外的半导体膜的侧部是源极，并且漏极区域包括诸如磷离子的n型杂质高浓度（3×10 15原子/ cm 2），以及设置在沟道区域和源极和漏极区域之间的低浓度区域，包括低浓度（1×10 13原子/ cm 2）的硼离子等p型杂质，由此低浓度区域用于减少截止电流。

7. 发明授权

US06678017B1 Display panel and method of fabricating the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US06678017B1
公开(公告)日：2004-01-13
申请号：US09325832
申请日：1999-06-04
申请人： Shinichi Shimomaki , Makoto Miyagawa , Hiromitsu Ishii , Yayoi Nakamura
发明人： Shinichi Shimomaki , Makoto Miyagawa , Hiromitsu Ishii , Yayoi Nakamura
IPC分类号： G02F11333
CPC分类号： G02F1/13452 , G02F1/136204 , G02F1/136227 , G02F2001/133388 , G02F2201/50 , G02F2201/501
摘要： An active matrix display panel includes a plurality of pixel electrodes formed in a matrix manner, a plurality of switching elements connected with these pixel electrodes, a plurality of scan lines for supplying a scan signal to thin film transistors, and a plurality of data lines for supplying a display data signal. Components except for the pixel electrodes are covered with an overcoat film. Since a contact hole extending through this overcoat film and a contact hole extending through the overcoat film and a gate insulating film are simultaneously formed, a jumper line for connecting a disconnected portion of a protect ring, a surface layer of a data line connecting pad, and a line protecting film are formed at the same time as the pixel electrodes are formed. This reduces the number of fabrication steps. Components such as the data line and source and drain electrodes are formed by a three-layered structure of Cr(Chromium)/Al(Aluminum)/Cr(Chromium). This reduces the contact resistance between the source electrode and the pixel electrode and also reduces the resistance of the data line. The sectional shape of, e.g., the data line made of the multilayered film is so formed as to be readily covered with the overcoat film. This improves the reliability.
摘要翻译：有源矩阵显示面板包括以矩阵形式形成的多个像素电极，与这些像素电极连接的多个开关元件，用于向薄膜晶体管提供扫描信号的多条扫描线，以及多条用于提供显示数据信号。除了像素电极之外的部件被覆盖膜覆盖。由于延伸穿过该外涂膜的接触孔和延伸穿过外涂膜的接触孔和栅极绝缘膜同时形成，用于连接保护环的断开部分的跳线，数据线连接焊盘的表面层，并且在形成像素电极的同时形成线保护膜。这减少了制造步骤的数量。诸如数据线和源电极和漏电极的部件由Cr（铬）/ Al（铝）/ Cr（铬）的三层结构形成。这降低了源电极和像素电极之间的接触电阻，并且还降低了数据线的电阻。例如由多层膜制成的数据线的截面形状形成为容易被覆盖膜覆盖。这提高了可靠性。

8. 发明授权

US5753937A Color liquid crystal display device having a semitransparent layer on the inner surface of one of the substrates 失效
标题翻译：在一个基板的内表面上具有半透明层的彩色液晶显示装置
公开(公告)号：US5753937A
公开(公告)日：1998-05-19
申请号：US455898
申请日：1995-05-31
申请人： Shinichi Shimomaki , Tetsushi Yoshida
发明人： Shinichi Shimomaki , Tetsushi Yoshida
IPC分类号： G02F1/1335 , G02F1/13363 , G02F1/139 , A01C29/04 , A01C31/036
CPC分类号： G02F1/1396 , G02F1/133555 , G02F1/13363 , G02F2203/02 , G02F2203/34
摘要： A color liquid crystal display device includes a front substrate having a surface on which a plurality of pixel electrodes are arranged in the form of a matrix, and two-terminal nonlinear resistor elements are arranged to correspond to the pixel electrodes. An aligning film covers the pixel electrodes and the nonlinear resistor elements. A rear substrate opposes the front substrate and has an inner surface on which counter electrodes are arranged to oppose the pixel electrodes, for forming a plurality of pixels. An aligning film covers the pixel and counter electrodes. A liquid crystal layer is sandwiched between the front and rear substrates and has an initial aligned state in which liquid crystal molecules are aligned in a predetermined direction by the aligning films. A polarizing member is arranged on an outer side of the front substrate such that a polarization axis of the polarizing member crosses an aligning direction of liquid crystal molecules adjacent to the aligning film on the front substrate side at an angle other than a right angle. A reflecting member is arranged on the rear substrate side. The two-terminal nonlinear resistor elements have one terminal connected to the pixel electrode, and another terminal receiving a signal voltage.
摘要翻译：彩色液晶显示装置包括具有矩阵状排列有多个像素电极的表面的正面基板，与像素电极对应的两端子非线性电阻元件。取向膜覆盖像素电极和非线性电阻元件。后基板与前基板相对，并且具有内表面，对置电极布置成与像素电极相对，用于形成多个像素。取向膜覆盖像素和对电极。液晶层夹在前基板和后基板之间，并具有其中液晶分子通过取向膜沿预定方向排列的初始对准状态。偏振构件布置在前基板的外侧，使得偏振构件的偏振轴以与直角不同的角度与前基板侧的取向膜相邻的液晶分子的排列方向交叉。反射构件设置在后基板侧。两端非线性电阻元件具有一个端子连接到像素电极，另一个端子接收信号电压。

9. 发明授权

US07619698B2 Liquid crystal display apparatus which performs display by using electric field in direction substantially parallel with substrate surfaces to control alignment direction of liquid crystal molecules 有权
标题翻译：通过使用大致平行于基板表面的方向的电场来进行显示的液晶显示装置，以控制液晶分子的取向方向
公开(公告)号：US07619698B2
公开(公告)日：2009-11-17
申请号：US11412037
申请日：2006-04-26
申请人： Shinichi Shimomaki
发明人： Shinichi Shimomaki
IPC分类号： G02F1/136
CPC分类号： G02F1/134363
摘要： A liquid crystal display apparatus includes a liquid crystal layer which is disposed in a gap between first and second substrates with long axes of liquid crystal molecules being aligned in one direction, in substantially parallel to substrate surfaces. A plurality of thin film transistors are arranged in row and column directions on an upper side of the first substrate. Pixel electrodes are provided on the upper side of the first substrate to be electrically connected with the thin film transistors. A common electrode is formed on the upper side of the first substrate between the substrate and the liquid crystal layer to correspond to the pixel electrode through an insulating film, and generates an electric filed which controls an alignment direction of the liquid crystal molecules in a plane substantially parallel with the substrate surfaces between itself and the pixel electrode.
摘要翻译：液晶显示装置包括液晶层，其设置在第一和第二基板之间的间隙中，其中液晶分子的长轴在一个方向上基本平行于基板表面。多个薄膜晶体管在第一基板的上侧以行和列方向布置。像素电极设置在第一基板的上侧以与薄膜晶体管电连接。在基板和液晶层之间的第一基板的上侧形成公共电极，以通过绝缘膜对应于像素电极，并且生成控制液晶分子在平面中的取向方向的电场基本上平行于其本身与像素电极之间的衬底表面。

10. 发明授权

US06653216B1 Transparent electrode forming apparatus and method of fabricating active matrix substrate 有权
标题翻译：透明电极形成装置及制造有源矩阵基板的方法
公开(公告)号：US06653216B1
公开(公告)日：2003-11-25
申请号：US09840220
申请日：2001-04-23
申请人： Shinichi Shimomaki , Makoto Miyagawa , Hiromitsu Ishii , Yayoi Nakamura , Toshiaki Higashi
发明人： Shinichi Shimomaki , Makoto Miyagawa , Hiromitsu Ishii , Yayoi Nakamura , Toshiaki Higashi
IPC分类号： H01L2144
CPC分类号： H01L31/1884 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L27/14692 , Y02E10/50
摘要： An active matrix substrate includes a line layer formed of an Al-based metal layer and a part of which is exposed through a contact hole formed in an insulating film. In the active matrix substrate, pixel electrodes are formed of an ITO film on the insulating film, and a jumper line for connecting a disconnected portion of a protect ring, a surface layer of a data line connecting pad, and a line protecting film are formed at the same time as the pixel electrodes are formed. This reduces the number of fabrication steps. The ITO film is patterned by dry etching due to reactive ion etching using a mixed gas of a hydrogen halide gas and an inert gas, with the temperatures of the center portion and peripheral portion of the substrate substantially equalized to each other.
摘要翻译：有源矩阵基板包括由Al基金属层形成的线层，其一部分通过形成在绝缘膜中的接触孔露出。在有源矩阵基板中，像素电极由绝缘膜上的ITO膜形成，并且形成用于连接保护环的断开部分，数据线连接焊盘的表面层和线保护膜的跨接线同时形成像素电极。这减少了制造步骤的数量。由于使用卤化氢气体和惰性气体的混合气体的反应离子蚀刻，基板的中心部分和周边部分的温度基本上彼此相等，因此通过干蚀刻将ITO膜图案化。

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