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    • 9. 发明申请
    • METHOD FOR MANUFACTURING NONVOLATILE STORAGE DEVICE
    • 制造非易失存储器件的方法
    • US20100248431A1
    • 2010-09-30
    • US12726749
    • 2010-03-18
    • Kazuhito NISHITANIEiji ItoMachiko TsukijiHiroyuki FukumizuNaoya HayamizuKatsuhiro Sato
    • Kazuhito NISHITANIEiji ItoMachiko TsukijiHiroyuki FukumizuNaoya HayamizuKatsuhiro Sato
    • H01L21/822H01L21/02
    • H01L27/101H01L27/24H01L45/04H01L45/145
    • A method for manufacturing a nonvolatile storage device including: a plurality of first electrodes aligning in a first direction; a plurality of second electrodes aligning in a second direction nonparallel to the first direction and provided above the first electrodes; and a first storage unit provided between the first electrode and the second electrode and including a first storage layer, a resistance of the first storage layer changing by at least one of an applied electric field and an applied current, the method includes: stacking a first electrode film forming a first electrode and a first storage unit film forming a first storage unit on a major surface of a substrate; processing the first electrode film and the first storage unit film into a strip shape aligning in the first direction; burying a sacrifice layer between the processed first electrode films and between the processed first storage unit films; forming a second electrode film forming a second electrode on the first storage unit film and the sacrifice layer; forming a mask layer having a lower etching rate than the sacrifice layer on the second electrode film; processing the second electrode film into a strip shape aligning in the second direction nonparallel to the first direction by using the mask layer as a mask; removing a portion of the first storage unit film exposed from the sacrifice layer by using the mask layer as a mask to process the first storage unit film into a columnar shape including a side wall along the first direction and a side wall along the second direction; removing the sacrifice layer to expose the first storage unit film having been covered with the sacrifice layer; and removing the exposed first storage unit film.
    • 一种非易失性存储装置的制造方法,包括:沿第一方向排列的多个第一电极; 多个第二电极,在与第一方向不平行的第二方向上排列并设置在第一电极之上; 以及第一存储单元,设置在所述第一电极和所述第二电极之间,并且包括第一存储层,所述第一存储层的电阻通过施加的电场和施加的电流中的至少一个而变化,所述方法包括: 形成第一电极的电极膜和在基板的主表面上形成第一存储单元的第一存储单元膜; 将所述第一电极膜和所述第一存储单元膜处理成沿所述第一方向对准的条形; 在经处理​​的第一电极膜之间和处理的第一存储单元膜之间埋设牺牲层; 在所述第一存储单元膜和所述牺牲层上形成形成第二电极的第二电极膜; 形成具有比所述第二电极膜上的牺牲层更低的蚀刻速率的掩模层; 通过使用掩模层作为掩模,将第二电极膜处理成沿与第一方向不平行的第二方向对准的条形; 通过使用掩模层作为掩模去除从牺牲层暴露的第一存储单元膜的一部分,以将第一存储单元膜处理成包括沿着第一方向的侧壁和沿着第二方向的侧壁的柱状; 去除牺牲层以暴露已经被牺牲层覆盖的第一存储单元膜; 以及去除所暴露的第一存储单元膜。
    • 10. 发明授权
    • Print control apparatus and printing system
    • 打印控制装置和打印系统
    • US07586638B2
    • 2009-09-08
    • US11409291
    • 2006-04-21
    • Masaki HyogoEiji ItoTomohiro Kodama
    • Masaki HyogoEiji ItoTomohiro Kodama
    • G06K15/00
    • G06F13/28G06F3/1204G06F3/1211G06F3/1237G06F3/1284
    • Systems and methods for reliably canceling a DMA transfer mode and accelerating printer initialization. A host device 3 for controlling a printer having a DMA transfer mode for printing by transferring image data associated with a received image print command to a print buffer 15. The host device 3 has a print data generating unit 33 for generating the image print command, memory 35 for storing the data size of the image data associated with the image print command generated by the print data generating unit 33, and a printer control unit 34 for sending to the printer 1 an initialization command having null data of the data size stored in memory 35 added to the beginning of the initialization command.
    • 用于可靠地取消DMA传输模式并加速打印机初始化的系统和方法。 用于通过将与接收到的图像打印命令相关联的图像数据传送到打印缓冲器15来控制具有用于打印的DMA传送模式的打印机的主机设备3.主机设备3具有用于生成图像打印命令的打印数据生成单元33, 用于存储与由打印数据生成单元33生成的图像打印命令相关联的图像数据的数据大小的存储器35以及打印机控制单元34,用于向打印机1发送存储有数据大小的空数据的初始化命令 内存35添加到初始化命令的开头。