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    • 3. 发明授权
    • Method and apparatus for fabricating quantum dot functional structure, quantum dot functional structure, and optically functioning device
    • 用于制造量子点功能结构,量子点功能结构和光学功能器件的方法和装置
    • US06648975B2
    • 2003-11-18
    • US09784300
    • 2001-02-16
    • Nobuyasu SuzukiToshiharu MakinoYuka YamadaTakehito YoshidaTakafumi SetoNobuhiro Aya
    • Nobuyasu SuzukiToshiharu MakinoYuka YamadaTakehito YoshidaTakafumi SetoNobuhiro Aya
    • C23C1400
    • B82Y30/00B22F9/12B22F2998/00B22F2999/00B82Y10/00C23C14/06C23C14/228C23C14/28H01L33/0054B22F1/0018B22F2202/11
    • The present invention is to fabricate a quantum dot functional structure having ultra-fine particles homogeneously distributed in a transparent medium by efficiently fabricating high-purity ultra-fine particles having a single particle diameter and uniform structure and depositing the ultra-fine particles onto a substrate in conjunction with the transparent medium. For these purposes, an apparatus for fabricating a quantum dot functional structure is provided. The apparatus comprises: an ultra-fine particle generating chamber for generating high-purity ultra-fine particles by exciting a semiconductor target with pulsed laser light in a low-pressure rare gas atmosphere, and then by allowing the semiconductor target to be detached or ejected by ablation reaction and condensed and grown in the gas; an ultra-fine particle classifying chamber for classifying the ultra-file particles; a depositing chamber for depositing the high-purity semiconductor ultra-fine particles and the transparent medium by exciting a transparent medium target with excimer laser light at the same time or alternately when the high-purity semiconductor ultra-fine particles are collected onto the substrate, and by collecting the substance generated through ablation reaction onto the substrate; and a carrier gas exhaust system.
    • 本发明通过有效地制造具有单一粒径和均匀结构的高纯度超细颗粒,并将超细颗粒沉积到基底上,制造均匀分布在透明介质中的超细颗粒的量子点功能结构 与透明介质一起使用。 为了这些目的,提供了一种用于制造量子点功能结构的装置。 该装置包括:超细颗粒发生室,用于通过在低压稀有气体气氛中用脉冲激光激发半导体靶,然后通过使半导体靶被分离或喷射而产生高纯度超细颗粒 通过消融反应并在气体中冷凝和生长; 用于对超微粒子进行分类的超细粒子分级室; 用于通过同时激发具有准分子激光的透明介质靶或者当高纯度半导体超细颗粒被收集到基板上时交替沉积高纯度半导体超细颗粒和透明介质的沉积室, 并通过将通过消融反应产生的物质收集到基底上; 和载气排气系统。
    • 8. 发明授权
    • Cold cathode forming process
    • 冷阴极成型工艺
    • US06726517B2
    • 2004-04-27
    • US09988396
    • 2001-11-19
    • Yuka YamadaTakehito YoshidaNobuyasu SuzukiToshiharu MakinoYoshikazu Hori
    • Yuka YamadaTakehito YoshidaNobuyasu SuzukiToshiharu MakinoYoshikazu Hori
    • H01J900
    • H01J9/025
    • The object of the present invention is to form the fine structure on a cathode surface homogeneously and reproducibly to realize the increased emission current value and stability with a simple process in the electron emission element forming process. An electron emission part of an electron emission element that is a crystalline thin film of electron emissive material formed in self-aligning fashion by means of a laser ablation process, in which a laser beam is irradiated onto a target material and the material ejected and emitted from the target material is deposited to form a thin film on a substrate facing to the target, is used as the thin film electron source. The above-mentioned structure is effective to realize the low electron emission threshold value and the increased emission current value and stability, and realize the reduced cost with the structure that is simpler than the conventional structure.
    • 本发明的目的是在阴极表面上均匀且可再现地形成精细结构,以通过电子发射元件形成过程中的简单工艺实现增加的发射电流值和稳定性。 作为电子发射元件的电子发射部分,其是通过激光烧蚀工艺以自对准方式形成的电子发射材料的结晶薄膜,其中将激光束照射到目标材料上并且材料被喷射和发射 从目标材料沉积以在面向靶的衬底上形成薄膜,用作薄膜电子源。 上述结构对于实现低电子发射阈值和增加的发射电流值和稳定性是有效的,并且以比传统结构简单的结构实现降低的成本。
    • 10. 发明授权
    • Thin film formation method
    • 薄膜形成方法
    • US06451391B1
    • 2002-09-17
    • US09392794
    • 1999-09-09
    • Yuka YamadaTakehito YoshidaNobuyasu SuzukiToshiharu Makino
    • Yuka YamadaTakehito YoshidaNobuyasu SuzukiToshiharu Makino
    • C23L1432
    • C23C14/28
    • In a laser ablation method comprising the steps of irradiating a laser beam to target material 107, and depositing ejected species from the target material on a faced substrate 109 to form a thin film, an ambient gas is introduced into reaction chamber 101 under a constant certain pressure when the laser ablation is performed, using a target material with almost or the same composition as that of a thin film to be obtained. It is thereby possible to obtain a thin film with the same composition as that of the target material readily, without requiring an introduction of O2 gas and a substrate heating. As a result, it is not necessary to limit materials for a substrate, and it is possible to adjust the adaptability of an anaerobic process.
    • 在一种激光烧蚀方法中,包括以下步骤:将激光束照射到靶材料107上,并将来自目标材料的喷射物质沉积在表面基底109上以形成薄膜,将环境气体以恒定的一定值引入反应室101 使用与获得的薄膜几乎或相同组成的目标材料进行激光烧蚀时的压力。 由此,可以容易地获得与目标材料组成相同的薄膜,而不需要引入O 2气体和基板加热。 结果,不需要限制基板的材料,并且可以调节厌氧处理的适应性。