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1. 发明授权

US06444374B1 Manufacturing method of mask for electron beam proximity exposure and mask 失效
标题翻译：电子束接近曝光和掩模掩模的制造方法
公开(公告)号：US06444374B1
公开(公告)日：2002-09-03
申请号：US09732931
申请日：2000-12-11
申请人： Nobuo Shimazu , Takao Utsumi
发明人： Nobuo Shimazu , Takao Utsumi
IPC分类号： G03F900
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/20 , H01J37/3174 , Y10S430/143
摘要： A method for manufacturing a mask which is used in an electron beam proximity exposure apparatus comprising an electron beam source which emits a collimated electron beam, the mask having an aperture which is arranged on a path of the electron beam, and a stage which holds and moves an object, wherein the mask is arranged in proximity to a surface of the object and a pattern corresponding to the aperture of the mask is exposed on the surface of the object with the electron beam having passed through the aperture, the method comprises the steps of: dividing the mask into a plurality of partial areas, and forming a plurality of partial masks which have apertures with patterns identical with the plurality of partial areas, respectively; and manufacturing the mask by exposing the patterns of the plurality of partial masks on corresponding positions of a mask substrate in an electron beam proximity exposure method. Thus, the method of manufacturing the masks for the electron beam proximity exposure at reduced costs is accomplished.
摘要翻译：一种用于电子束接近曝光设备的电子束接近曝光设备的制造方法，该电子束接近曝光设备包括发射准直电子束的电子束源，该掩模具有布置在电子束路径上的孔，移动物体，其中掩模布置在物体的表面附近，并且与电子束通过孔径的物体的表面上对应于掩模的孔的图案暴露在物体的表面上，该方法包括步骤将掩模分成多个部分区域，并分别形成具有与多个部分区域相同的图案的孔的多个部分掩模; 以及通过在电子束接近曝光方法中将多个部分掩模的图案暴露在掩模基板的相应位置上来制造掩模。因此，实现了以降低的成本制造用于电子束接近曝光的掩模的方法。

2. 发明授权

US06894295B2 Electron beam proximity exposure apparatus and mask unit therefor 失效
标题翻译：电子束接近曝光装置及其掩模单元
公开(公告)号：US06894295B2
公开(公告)日：2005-05-17
申请号：US09732928
申请日：2000-12-11
申请人： Nobuo Shimazu , Takao Utsumi
发明人： Nobuo Shimazu , Takao Utsumi
IPC分类号： G21K5/04 , G03F1/16 , G03F7/20 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/20
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/0458 , H01J2237/31788
摘要： In an electron beam proximity exposure apparatus comprising an electron beam source, which emits a collimated electron beam, a mask substrate on which a plurality of masks with apertures are formed, a mask moving mechanism, which moves the mask substrate, and a stage, which holds and moves an object, the mask moving mechanism moves the mask substrate so that one of the plurality of masks is arranged on a path of the electron beam in proximity to a surface of the object, and a pattern corresponding to the aperture of the one of the plurality of masks is exposed on the surface of the object with the electron beam having passed through the aperture. Thus, the frequency of taking the mask out of the apparatus to exchange the mask is reduced, so that the throughput of the apparatus is improved.
摘要翻译：在包括发射准直电子束的电子束源的电子束接近曝光装置中，形成有多个具有孔的掩模的掩模基板，移动掩模基板的掩模移动机构和台阶保持和移动物体，掩模移动机构移动掩模基板，使得多个掩模中的一个掩模布置在接近物体表面的电子束的路径上，并且与该一个的孔的对应的图案的多个掩模在电子束已通过孔的情况下暴露在物体的表面上。因此，将掩模从装置中取出以交换掩模的频率减小，从而提高了装置的吞吐量。

3. 发明授权

US06727507B2 Electron beam proximity exposure apparatus and method 失效
标题翻译：电子束接近曝光装置及方法
公开(公告)号：US06727507B2
公开(公告)日：2004-04-27
申请号：US09765388
申请日：2001-01-22
申请人： Nobuo Shimazu , Takao Utsumi
发明人： Nobuo Shimazu , Takao Utsumi
IPC分类号： H01J3700
CPC分类号： B82Y10/00 , B82Y40/00 , G21K1/08 , H01J37/3174 , H01J2237/31788
摘要： The electron beam proximity exposure apparatus comprises: an electron beam source which emits an electron beam; an electron beam shaping device which shapes the electron beam; a mask which has an aperture and is disposed on a path of the shaped electron beam; a deflecting and scanning device which deflects the electron beam to scan the mask with the shaped electron beam; and a stage which holds and moves an object, wherein the mask is disposed in proximity to a surface of the object, and a pattern corresponding to the aperture of the mask is exposed on the surface of the object with the electron beam having passed through the aperture, wherein the electron beam shaping device shapes the electron beam into a slender beam of which cross section has a small width in a direction of the scanning and a large width in a direction perpendicular to the direction of the scanning. Thus, in the electron beam proximity exposure apparatus, the responsiveness of the on-off control over the application of the electron beam can be improved with keeping the scanning width large without lowering the throughput of the exposure apparatus.
摘要翻译：电子束接近曝光装置包括：发射电子束的电子束源; 形成电子束的电子束整形装置; 具有孔径并设置在成形电子束的路径上的掩模; 偏转和扫描装置，其使电子束偏转以用成形电子束扫描掩模; 以及保持和移动物体的台阶，其中所述掩模设置在所述物体的表面附近，并且与所述掩模的孔径相对应的图案在所述物体的表面上暴露，所述电子束已经通过所述物体孔，其中电子束成形装置将电子束成形为在扫描方向上横截面具有小宽度并且在垂直于扫描方向的方向上具有大宽度的细长光束。因此，在电子束接近曝光装置中，通过保持扫描宽度大而不降低曝光装置的生产能力，可以提高对施加电子束的开 - 关控制的响应性。

4. 发明授权

US06703623B1 Electron beam proximity exposure apparatus 失效
标题翻译：电子束接近曝光装置
公开(公告)号：US06703623B1
公开(公告)日：2004-03-09
申请号：US09670262
申请日：2000-09-27
申请人： Nobuo Shimazu , Takao Utsumi
发明人： Nobuo Shimazu , Takao Utsumi
IPC分类号： G03F700
CPC分类号： G03F7/2037 , H01J2237/3175
摘要： The electronic beam proximity exposure apparatus comprises: an electron beam proximity exposure section which exposes a pattern corresponding to an aperture of a mask on a surface of an object with an electron beam having passed through the aperture of the mask, the mask being disposed in proximity to the surface of the object; a mask inspecting section which inspects the mask; and a mask carrying mechanism which carries the mask between the electron beam proximity exposure section and the mask inspecting section, and is characterized in that the electron beam proximity exposure section, the mask inspecting section and the mask carrying mechanism are communicated with one another through a common vacuum path so that the mask can be carried in a vacuum condition between the electron beam proximity exposure section and the mask inspecting section. This realizes the electronic beam proximity exposure apparatus that enhances a reliability by preventing a defect from being produced due to adhering dust or the like.
摘要翻译：电子束接近曝光装置包括：电子束接近曝光部，其电子束通过掩模的孔露出与物体表面上的掩模的孔相对应的图案，掩模设置在接近到物体的表面; 检查面具的面罩检查部; 以及在电子束接近曝光部和掩模检查部之间携带掩模的掩模搬送机构，其特征在于，电子束接近曝光部，掩模检查部和面罩传送机构通过通常的真空路径，使得掩模可以在电子束接近曝光部分和掩模检查部分之间的真空条件下被携带。这实现了通过防止由于灰尘等的附着而产生缺陷而提高可靠性的电子束接近曝光装置。

5. 发明授权

US06717157B2 Mask inspecting apparatus 失效
标题翻译：面罩检查仪
公开(公告)号：US06717157B2
公开(公告)日：2004-04-06
申请号：US10188335
申请日：2002-07-03
申请人： Takao Utsumi
发明人： Takao Utsumi
IPC分类号： G03B2754
CPC分类号： H01J37/3175 , B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/24592 , H01J2237/31776 , H01J2237/31788 , H01J2237/31794
摘要： The mask inspecting apparatus is incorporated into an electron beam proximity exposure apparatus in which a mask is arranged in proximity to a wafer, and a mask pattern formed on the mask is transferred onto a resist layer on the wafer by scanning the mask with an electron beam. The mask inspecting apparatus comprises a scanning electron microscope (SEM) arranged on a wafer stage, and a stage drive device which shifts the wafer stage so that an electron detector of the SEM can receive electrons originating from the electron beam transmitting through the mask pattern of the mask in an inspection of the mask. The SEM thereby capture an image of the mask pattern on the lower face of the mask. Thus, the mask inspection can be performed using an electron beam intended for use in proximity exposure in the electron beam proximity exposure apparatus.
摘要翻译：掩模检查装置被结合到电子束接近曝光装置中，其中掩模布置在晶片附近，并且通过用电子束扫描掩模将形成在掩模上的掩模图案转移到晶片上的抗蚀剂层上。掩模检查装置包括布置在晶片台上的扫描电子显微镜（SEM）和移动晶片台的载物台驱动装置，使得SEM的电子检测器可以接收源自通过掩模图案传输的电子束的电子面具在检查面具。 SEM从而在掩模的下表面上捕获掩模图案的图像。因此，可以使用旨在用于电子束接近曝光装置中的接近曝光的电子束来进行掩模检查。

6. 发明授权

US09557658B2 Low energy electron beam lithography 有权
标题翻译：低能电子束光刻
公开(公告)号：US09557658B2
公开(公告)日：2017-01-31
申请号：US14831099
申请日：2015-08-20
申请人： Takao Utsumi
发明人： Takao Utsumi
IPC分类号： H01J37/147 , H01J37/04 , G03F7/20 , H01L21/3065 , H01L21/308 , H01L21/68
CPC分类号： G03F7/70725 , H01J37/09 , H01J37/3177 , H01J2237/0453 , H01J2237/1501 , H01L21/681 , H01L21/682
摘要： The system for drawing a pattern on a resist layer covering a semiconductor wafer, comprising an electron gun housing unit provided with a plurality of small-sized electron guns (wherein the housing unit has a hollow column section for releasing an electron beam, and a micro deflection unit is disposed inside for adjusting the inclination of the electron beam), a movable stage capable of moving in the X-Y directions, a wafer stage disposed on the movable stage to support a semiconductor wafer, a mask wafer having struts on its rear side for supporting membranes on which a pattern to be transferred is formed, a mask stage for holding the mask wafer, a matching detection unit for detecting a misalignment between the mask wafer and the semiconductor wafer, and an inclination means connected to the micro deflection unit and the matching detection unit for inclining the electron beam.
摘要翻译：用于在覆盖半导体晶片的抗蚀剂层上绘制图案的系统，包括设置有多个小型电子枪的电子枪容纳单元（其中，壳体单元具有用于释放电子束的中空柱部分，以及微型偏转单元设置在内侧以调节电子束的倾斜度），能够在XY方向上移动的可移动台，设置在可移动台上的晶片台以支撑半导体晶片，在其后侧具有支撑的掩模晶片形成有转印图案的支撑膜，用于保持掩模晶片的掩模台，用于检测掩模晶片和半导体晶片之间的未对准的匹配检测单元和连接到微偏转单元的倾斜装置和用于倾斜电子束的匹配检测单元。

7. 发明授权

US5831272A Low energy electron beam lithography 失效
标题翻译：低能电子束光刻
公开(公告)号：US5831272A
公开(公告)日：1998-11-03
申请号：US955833
申请日：1997-10-21
申请人： Takao Utsumi
发明人： Takao Utsumi
IPC分类号： G03F7/20 , H01J37/147 , H01J37/305 , H01J37/317 , H01L21/027 , H01J37/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31788
摘要： A low energy electron beam lithography system uses an 2 KeV electron beam of about three microamperes, a mask formed from a monocrystalline silicon wafer with a membrane thinned to about 0.5 micron, and spaced from an electron-beam sensitive resist-coated substrate about 50 microns and with the thickness of the resist of about 0.1 micron.
摘要翻译：低能电子束光刻系统使用约3微安培的2keV电子束，由单薄硅晶片形成的掩模，其薄膜变薄至约0.5微米，并与电子束敏感的涂覆有抗蚀剂的基底间隔约50微米并且抗蚀剂的厚度为约0.1微米。

8. 发明授权

US10950441B1 Low energy e-beam contact printing lithography 有权
公开(公告)号：US10950441B1
公开(公告)日：2021-03-16
申请号：US16811339
申请日：2020-03-06
申请人： Takao Utsumi
发明人： Takao Utsumi
IPC分类号： H01L21/027 , H01L21/033 , H01L21/683 , H01L21/308
摘要： A method comprising contact-free positioning a template mask wafer having a template device pattern relative to a predetermined surface area section of a device pattern wafer. The template mask wafer includes a semitransparent layer. The method includes contact-free aligning one or more mask alignment marks of the template mask wafer with one or more alignment marks of the device pattern wafer and contacting the mask wafer on the device pattern wafer. The method includes transferring a template device pattern of the template mask wafer onto the predetermined surface area section of the device pattern wafer using an electron beam while heat conduction is distributed throughout the mask wafer to maintain a low temperature rise in the mask wafer during the transferring. A system is also provided.

9. 发明申请

US20160274474A1 LOW ENERGY ELECTRON BEAM LITHOGRAPHY 审中-公开
标题翻译：低能量电子束光刻
公开(公告)号：US20160274474A1
公开(公告)日：2016-09-22
申请号：US14831099
申请日：2015-08-20
申请人： Takao Utsumi
发明人： Takao Utsumi
IPC分类号： G03F7/20 , H01L21/308 , H01L21/68 , H01L21/3065
CPC分类号： G03F7/70725 , H01J37/09 , H01J37/3177 , H01J2237/0453 , H01J2237/1501 , H01L21/681 , H01L21/682
摘要： The system for drawing a pattern on a resist layer covering a semiconductor wafer, comprising an electron gun housing unit provided with a plurality of small-sized electron guns (wherein the housing unit has a hollow column section for releasing an electron beam, and a micro deflection unit is disposed inside for adjusting the inclination of the electron beam), a movable stage capable of moving in the X-Y directions, a wafer stage disposed on the movable stage to support a semiconductor wafer, a mask wafer having struts on its rear side for supporting membranes on which a pattern to be transferred is formed, a mask stage for holding the mask wafer, a matching detection unit for detecting a misalignment between the mask wafer and the semiconductor wafer, and an inclination means connected to the micro deflection unit and the matching detection unit for inclining the electron beam.
摘要翻译：用于在覆盖半导体晶片的抗蚀剂层上绘制图案的系统，包括设置有多个小型电子枪的电子枪容纳单元（其中，壳体单元具有用于释放电子束的中空柱部分，以及微型偏转单元设置在内侧以调节电子束的倾斜度），能够在XY方向上移动的可移动台，设置在可移动台上的晶片台以支撑半导体晶片，在其后侧具有支撑的掩模晶片形成有转印图案的支撑膜，用于保持掩模晶片的掩模台，用于检测掩模晶片和半导体晶片之间的未对准的匹配检测单元和连接到微偏转单元的倾斜装置和用于倾斜电子束的匹配检测单元。

10. 发明申请

US20150146179A1 Low energy electron beam lithography 审中-公开
标题翻译：低能电子束光刻
公开(公告)号：US20150146179A1
公开(公告)日：2015-05-28
申请号：US13998694
申请日：2013-11-25
申请人： Takao Utsumi
发明人： Takao Utsumi
IPC分类号： H01L21/768
CPC分类号： H01J37/3174 , H01J2237/31788
摘要： A low energy electron beam lithography system uses an 2 KeV electron beam of about two hundred microamperes, a 4 Division Complementary Mask (4DCM) formed from a monocrystalline silicon wafer with membranes about 100 nm thick that are surrounded by supporting silicon struts, and spaced about 50 microns from an electron sensitive resist layer about 20 nm thick that covers a nonmetallic conductive layer that covers a semiconductor wafer. Distortions in the 4DCM and semiconductor wafer are sensed and an error distortion signal is generated that results in the electron beam being tilted so as to compensate for the distortions to minimize image placement errors.
摘要翻译：低能量电子束光刻系统使用约二百微安培的2KeV电子束，由单晶硅晶片形成的4分区互补掩膜（4DCM），其具有由支撑硅支柱围绕的约100nm厚的膜，并且间隔开距离覆盖半导体晶片的非金属导电层约20nm厚的电子敏感抗蚀剂层50微米。感测到4DCM和半导体晶片中的失真，并且产生导致电子束倾斜的误差失真信号，以便补偿失真以最小化图像放置误差。

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