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1. 发明授权

US5753320A Process for forming deposited film 失效
标题翻译：沉积膜形成工艺
公开(公告)号：US5753320A
公开(公告)日：1998-05-19
申请号：US471158
申请日：1995-06-06
申请人： Nobuo Mikoshiba , Tadahiro Ohmi , Kazuo Tsubouchi , Kazuya Masu , Nobumasa Suzuki
发明人： Nobuo Mikoshiba , Tadahiro Ohmi , Kazuo Tsubouchi , Kazuya Masu , Nobumasa Suzuki
IPC分类号： H01L21/205 , C23C16/452 , C23C16/48 , C23C16/50 , H01L21/263 , H01L21/31 , H05H1/00
CPC分类号： C23C16/452 , C23C16/48 , C23C16/482
摘要： A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.
摘要翻译：根据化学气相沉积法在基板上形成沉积膜的方法包括预先形成含有成为构成所述沉积膜的成分的原子的气相化合物的激发物质，将激发的物质供应到所述基板的表面上并实现光照射在所述基板表面上，由此通过表面反应形成沉积膜。

2. 发明授权

US5803974A Chemical vapor deposition apparatus 失效
标题翻译：化学气相沉积装置
公开(公告)号：US5803974A
公开(公告)日：1998-09-08
申请号：US479857
申请日：1995-06-07
申请人： Nobuo Mikoshiba , Tadahiro Ohmi , Kazuo Tsubouchi , Kazuya Masu , Nobumasa Suzuki
发明人： Nobuo Mikoshiba , Tadahiro Ohmi , Kazuo Tsubouchi , Kazuya Masu , Nobumasa Suzuki
IPC分类号： H01L21/205 , C23C16/452 , C23C16/48 , C23C16/50 , H01L21/263 , H01L21/31 , C23C16/00
CPC分类号： C23C16/452 , C23C16/48 , C23C16/482
摘要： A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.
摘要翻译：根据化学气相沉积法在基板上形成沉积膜的方法包括预先形成含有成为构成所述沉积膜的成分的原子的气相化合物的激发物质，将激发的物质供应到所述基板的表面上并实现光照射在所述基板表面上，由此通过表面反应形成沉积膜。

3. 发明授权

US5245207A Integrated circuit 失效
标题翻译：集成电路
公开(公告)号：US5245207A
公开(公告)日：1993-09-14
申请号：US568956
申请日：1990-08-17
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
IPC分类号： H01L27/088 , H01L29/49
CPC分类号： H01L29/49 , H01L27/0883 , H01L29/4916 , H01L29/4966 , H01L29/4975
摘要： A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate. Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.
摘要翻译：即使在室温或液氮温度下也可以通过使用耗尽型MOSFET来实现耗尽操作，而不会在与栅极电极下方的沟道部分掺杂具有与半导体衬底的导电类型相反的导电类型的杂质。此外，该FET可以与增强型FET一起构造逆变器，并且它们可以集成在一个衬底上。

4. 发明授权

US5393699A Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride 失效
标题翻译：利用烷基铝氢化物利用选择性沉积的沉积成膜方法
公开(公告)号：US5393699A
公开(公告)日：1995-02-28
申请号：US969353
申请日：1992-10-30
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
IPC分类号： C23C16/20 , C23C14/34 , C23C16/02 , C23C16/04 , C23C16/18 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52 , H01L21/44
CPC分类号： H01L21/32051 , H01L21/28562 , H01L2924/0002
摘要： By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.
摘要翻译：通过提供一种沉积膜形成方法，其中使用氢化铝和氢的方法根据CVD方法选择性地沉积铝或主要由铝构成的金属的沉积膜形成方法，然后纯铝或主要由铝构成的金属是非金属的，可以在精细的开口内或在绝缘层上形成质量好的导电膜。

5. 发明授权

US5180687A Deposited film formation method utilizing selective deposition by use of alkyl aluminum hydride 失效
标题翻译：利用ALKYL铝氢化物利用选择性沉积的沉积膜形成方法
公开(公告)号：US5180687A
公开(公告)日：1993-01-19
申请号：US587045
申请日：1990-09-24
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
IPC分类号： C23C16/20 , C23C14/34 , C23C16/02 , C23C16/04 , C23C16/18 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L23/52
CPC分类号： H01L21/32051 , H01L21/28562 , H01L2924/0002
摘要： By providing a deposited film formation method in which aluminum or a metal composed mainly of aluminum of good quality is selectively deposited according to the CVD method utilizing an alkyl aluminum hydride and hydrogen, and then pure aluminum or a metal composed mainly of aluminum is non-selectively deposited, it becomes possible to form an electroconductive film of good quality within fine openings or on an insulating layer.

6. 发明授权

US5091210A Plasma CVD of aluminum films 失效
标题翻译：铝膜等离子体CVD
公开(公告)号：US5091210A
公开(公告)日：1992-02-25
申请号：US584637
申请日：1990-09-19
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
IPC分类号： C23C16/20 , C23C16/452 , C23C16/50 , H01L21/28 , H01L21/285
CPC分类号： C23C16/452 , C23C16/20
摘要： A deposited film formation method which forms an aluminum film by use of the plasma CVD method,wherein a substrate having an electron donative surface (A) and a non-electron donative surface (B) is arranged in a space for deposited film formation having a portion which is increased in cross-sectional area toward said substrate is arranged, and a gas of trimethylaluminum and hydrogen gas are introduced into said space for deposited film formation to deposit an aluminum film selectively on said electron donative surface (A).A deposited film formation method which forms an aluminum film by use of the plasma CVD method, comprising:(a) the step of arranging a substrate having an electron donative surface (a) and a non-electron donative surface (B) in a space for deposited film formation equipped with a reverse flow preventive means into plasma, and(b) the step of introducing a gas of trimethylaluminum and hydrogen gas into said space for deposited film formation, said aluminum film being selectively formed on said electron donative surface (A).
摘要翻译：使用等离子体CVD法形成铝膜的沉积膜形成方法，其中具有给电子表面（A）和非电子给体表面（B）的基板被布置在用于沉积膜形成的空间中，具有布置了朝向所述基板的横截面面积增加的部分，并且将三甲基铝和氢气的气体引入所述用于沉积膜形成的空间中以在所述给电子表面（A）上选择性地沉积铝膜。一种通过使用等离子体CVD法形成铝膜的沉积膜形成方法，包括：（a）将具有给电子表面（a）和非电子给体表面（B）的衬底排列在空间中的步骤（b）将三甲基铝和氢气的气体引入所述用于沉积膜形成的空间中的步骤，所述铝膜选择性地形成在所述给电子表面（A ）。

7. 发明授权

US5779804A Gas feeding device for controlled vaporization of an organanometallic compound used in deposition film formation 失效
标题翻译：用于沉积膜形成中使用的有机金属化合物的气体进料装置
公开(公告)号：US5779804A
公开(公告)日：1998-07-14
申请号：US439516
申请日：1995-05-11
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
IPC分类号： C23C16/20 , C23C16/448 , C30B25/14 , C23C16/00
CPC分类号： C23C16/4485 , C23C16/20 , C23C16/4482 , C23C16/4486 , C30B25/14
摘要： A gas-feeding device for feeding a starting gas for deposition-film-formation by the chemical vapor deposition method, comprising a container having a space for discharging the starting gas containing an organometallic compound by introduction of a carrier gas; a gas-introducing means connected to the container for introducing a carrier gas is described. A plurality of openings for introducing the organometallic compound into the container is also provided, wherein each opening is part of an atomizer employing a piezoelectric element to eject the organometallic compound in a mist state into the container where the carrier gas passes through the space, and a container is provided for storing the organometallic compound.
摘要翻译：一种用于通过化学气相沉积方法供给用于沉积膜形成的起始气体的气体供给装置，包括：具有通过引入载气排出含有有机金属化合物的起始气体的空间的容器; 描述了连接到用于引入载气的容器的气体引入装置。还提供了用于将有机金属化合物引入容器的多个开口，其中每个开口是使用压电元件的雾化器的一部分，以将喷雾状态的有机金属化合物喷射到载气通过该空间的容器中，以及提供容器用于储存有机金属化合物。

8. 发明授权

US5328873A Process for forming deposited film by use of alkyl aluminum hydride 失效
标题翻译：使用氢化烷基铝形成沉积膜的方法
公开(公告)号：US5328873A
公开(公告)日：1994-07-12
申请号：US902829
申请日：1992-06-23
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
IPC分类号： C23C16/20 , H01L21/285
CPC分类号： H01L21/28562 , C23C16/20 , Y10S438/937
摘要： A process for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al.
摘要翻译：根据使用氢化烷基氢化铝和氢气之间的反应的CVD方法形成质量好的Al膜的方法，其也是能够选择性沉积Al的优异沉积膜形成工艺。

9. 发明授权

US5316972A Process for forming deposited film by use of alkyl aluminum hydride and process for preparing semiconductor device 失效
标题翻译：通过使用氢化烷基铝形成沉积膜的方法和制备半导体器件的方法
公开(公告)号：US5316972A
公开(公告)日：1994-05-31
申请号：US899940
申请日：1992-06-17
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
IPC分类号： H01L21/285 , H01L21/768
CPC分类号： H01L21/28562 , H01L21/76879
摘要： In forming a deposited film composed mainly of Al according to the CVD method utilizing gas of alkyl aluminum hydride, hydrogen gas, and if desired, further gas containing Si atoms, film formation is carried out by shifting the deposition rate from a low deposition rate to a high deposition rate.According to this method, excellent selectivity is exhibited and also a film excellent in flatness can be deposited at a high deposition rate.
摘要翻译：在使用氢化烷基氢化铝，氢气，如果需要的话，根据CVD法形成主要由Al组成的沉积膜，还含有Si原子的气体，通过将沉积速率从低沉积速率转移到沉积速率高。根据该方法，显示出优异的选择性，并且可以以高沉积速率沉积出优异的平坦度的膜。

10. 发明授权

US5824150A Process for forming deposited film by use of alkyl aluminum hydride 失效
标题翻译：使用氢化烷基铝形成沉积膜的方法
公开(公告)号：US5824150A
公开(公告)日：1998-10-20
申请号：US948401
申请日：1997-10-10
申请人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
发明人： Nobuo Mikoshiba , Kazuo Tsubouchi , Kazuya Masu
IPC分类号： C23C16/20 , H01L21/285 , H01L21/768 , C30B25/02
CPC分类号： H01L21/28562 , C23C16/20 , H01L21/76838
摘要： A process and apparatus for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al. Pressure in a deposition chamber is maintained from 10.sup.-3 to 760 Torr. Alkyl aluminum hydride and hydrogen gas are introduced at a partial pressure from 1.5.times.10.sup.-5 to 1.3.times.10.sup.-3 of the pressure in the chamber. Aluminum is deposited on a substrate in the chamber by heating the substrate sufficiently to decompose the alkyl aluminum hydride.
摘要翻译：根据利用烷基氢化铝和氢的反应的CVD方法形成具有良好质量的Al膜的方法和装置，其是也能够选择性沉积Al的优异沉积膜形成工艺。沉积室中的压力保持在10-3至760乇。在室内的压力的1.5×10-5至1.3×10-3的分压下引入烷基氢化铝和氢气。铝通过充分加热基底而沉积在室中的基底上以分解烷基铝氢化物。

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