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1. 发明授权

US06491452B2 Developing method and developing apparatus 失效
标题翻译：开发方法和开发设备
公开(公告)号：US06491452B2
公开(公告)日：2002-12-10
申请号：US09832205
申请日：2001-04-11
申请人： Nobuo Konishi , Takayuki Toshima , Tsutae Omori
发明人： Nobuo Konishi , Takayuki Toshima , Tsutae Omori
IPC分类号： G03D500
CPC分类号： G03F7/32 , G03F7/3014 , G03F7/3021
摘要： When a resist film formed on a substrate is exposed in a predetermined pattern and thereafter an exposed pattern is developed, a substance capable of decreasing fluidity of the developing solution is added to the developing solution, the developing solution to which the substance is added is caused to become low-fluid under a predetermined condition, the developing solution is applied onto the exposed resist film on the substrate, and thereafter a predetermined trigger is given to the developing solution to cause the developing solution to become high-fluid so as to allow developing to progress. Thereby, line width can be made uniform and defects do not tend to occur during coating of the developing solution.
摘要翻译：当形成在基板上的抗蚀剂膜以预定图案曝光，然后曝光图案显影时，将能够降低显影液流动性的物质加入显影液中，引起添加物质的显影液在预定条件下变成低流体，将显影液施加到基板上暴露的抗蚀剂膜上，然后给显影液赋予预定的触发剂，使显影液变成高流体，以使显影进步。因此，可以使线宽度均匀，并且在显影溶液的涂布期间不会发生缺陷。

2. 发明授权

US06238848B1 Developing method and developing apparatus 失效
公开(公告)号：US06238848B1
公开(公告)日：2001-05-29
申请号：US09539378
申请日：2000-03-31
申请人： Nobuo Konishi , Takayuki Toshima , Tsutae Omori
发明人： Nobuo Konishi , Takayuki Toshima , Tsutae Omori
IPC分类号： G03F730
CPC分类号： G03F7/32 , G03F7/3014 , G03F7/3021
摘要： When a resist film formed on a substrate is exposed in a predetermined pattern and thereafter an exposed pattern is developed, a substance capable of decreasing fluidity of the developing solution is added to the developing solution, the developing solution to which the substance is added is caused to become low-fluid under a predetermined condition, the developing solution is applied onto the exposed resist film on the substrate, and thereafter a predetermined trigger is given to the developing solution to cause the developing solution to become high-fluid so as to allow developing to progress. Thereby, line width can be made uniform and defects do not tend to occur during coating of the developing solution.

3. 发明授权

US06398429B1 Developing method and developing apparatus 失效
标题翻译：开发方法和开发设备
公开(公告)号：US06398429B1
公开(公告)日：2002-06-04
申请号：US09524282
申请日：2000-03-13
申请人： Takayuki Toshima , Tsutae Omori , Yoshio Kimura
发明人： Takayuki Toshima , Tsutae Omori , Yoshio Kimura
IPC分类号： G03D500
CPC分类号： G03D5/04 , G03F7/3021 , G03F7/38 , Y10S134/902
摘要： A solution having a photosensitive radical is applied onto a resist film, a developing solution is applied thereonto, and the entire surface of the solution having the photosensitive radical is exposed all at once. Developing of the resist film progresses all at once after a coating film of the solution having the photosensitive radical dissolves in the developing solution, and hence time difference in the start time of developing does not occur in the surface of a substrate, thereby enabling uniform developing and an improvement in line width uniformity (CD value uniformity) in the surface of the substrate.
摘要翻译：将具有光敏基团的溶液施加到抗蚀剂膜上，将显影液施加到其上，并且具有光敏基团的溶液的整个表面全部被曝光。在具有感光性自由基的溶液的涂膜溶解在显影液中之后，抗蚀剂膜的显影全部进行，因此在基板表面上不会发生显影开始时间的时间差，从而能够均匀显影以及衬底表面的线宽均匀性（CD值均匀性）的改善。

4. 发明授权

US06872670B2 Silylation treatment unit and method 失效
标题翻译：甲硅烷基化处理装置及方法
公开(公告)号：US06872670B2
公开(公告)日：2005-03-29
申请号：US10752556
申请日：2004-01-08
申请人： Takayuki Toshima , Tsutae Omori , Masami Yamashita
发明人： Takayuki Toshima , Tsutae Omori , Masami Yamashita
IPC分类号： H01L21/205 , G03F7/20 , G03F7/26 , H01L21/00 , H01L21/31
CPC分类号： H01L21/67109 , G03F7/265 , G03F7/70991
摘要： A silylation treatment unit includes a chamber, a heating mechanism provided in this chamber for heating a substrate, a supplying mechanism for supplying a vapor including a silylation reagent into the chamber. The unit also has a substrate holder for holding the substrate in the chamber, in which an interval between the heating mechanism and the substrate is adjustable to at least three levels or more. The substrate is received such that it is least influenced by a heat in the chamber by maximizing the interval from the heating mechanism. The interval is brought comparatively closer to the heating mechanism to wait until the temperature inside the chamber obtains a high planer uniformity. The interval is brought further closer to the heating mechanism after a high planer uniformity is obtained such that a silylation reaction occurs.
摘要翻译：甲硅烷基化处理单元包括室，设置在该室中用于加热基板的加热机构，用于将包含甲硅烷基化试剂的蒸气供应到室中的供给机构。该单元还具有用于将基板保持在室中的基板保持器，其中加热机构和基板之间的间隔可调节至少三级或更多级。接收基板，使得其通过使来自加热机构的间隔最大化而受到室内热量的影响最小。使间隔相对更靠近加热机构，等待室内温度获得高的平面均匀性。在获得高平面均匀性之后，间隔进一步靠近加热机构，使得发生甲硅烷基化反应。

5. 发明授权

US06713239B2 Developing method and developing apparatus 失效
标题翻译：开发方法和开发设备
公开(公告)号：US06713239B2
公开(公告)日：2004-03-30
申请号：US10108382
申请日：2002-03-29
申请人： Takayuki Toshima , Tsutae Omori , Yoshio Kimura
发明人： Takayuki Toshima , Tsutae Omori , Yoshio Kimura
IPC分类号： G03F730
CPC分类号： G03D5/04 , G03F7/3021 , G03F7/38 , Y10S134/902
摘要： A solution having a photosensitive radical is applied onto a resist film, a developing solution is applied thereonto, and the entire surface of the solution having the photosensitive radical is exposed all at once. Developing of the resist film progresses all at once after a coating film of the solution having the photosensitive radical dissolves in the developing solution, and hence time difference in the start time of developing does not occur in the surface of a substrate, thereby enabling uniform developing and an improvement in line width uniformity (CD value uniformity) in the surface of the substrate.
摘要翻译：将具有光敏基团的溶液施加到抗蚀剂膜上，将显影液施加到其上，并且具有光敏基团的溶液的整个表面全部被曝光。在具有感光性自由基的溶液的涂膜溶解在显影液中之后，抗蚀剂膜的显影全部进行，因此在基板表面上不会发生显影开始时间的时间差，从而能够均匀显影以及衬底表面的线宽均匀性（CD值均匀性）的改善。

6. 发明授权

US06709523B1 Silylation treatment unit and method 失效
公开(公告)号：US06709523B1
公开(公告)日：2004-03-23
申请号：US09713247
申请日：2000-11-16
申请人： Takayuki Toshima , Tsutae Omori , Masami Yamashita
发明人： Takayuki Toshima , Tsutae Omori , Masami Yamashita
IPC分类号： C23C1600
CPC分类号： H01L21/67109 , G03F7/265 , G03F7/70991
摘要： A silylation treatment unit includes a chamber, a heating mechanism provided in this chamber for heating a substrate, a supplying mechanism for supplying a vapor including a silylation reagent into the chamber. The unit also has a substrate holder for holding the substrate in the chamber, in which an interval between the heating mechanism and the substrate is adjustable to at least three levels or more. The substrate is received such that it is least influenced by a heat in the chamber by maximizing the interval from the heating mechanism. The interval is brought comparatively closer to the heating mechanism to wait until the temperature inside the chamber obtains a high planer uniformity. The interval is brought further closer to the heating mechanism after a high planer uniformity is obtained such that a silylation reaction occurs.

7. 发明授权

US06656273B1 Film forming method and film forming system 失效
标题翻译：成膜方法和成膜系统
公开(公告)号：US06656273B1
公开(公告)日：2003-12-02
申请号：US09593948
申请日：2000-06-15
申请人： Takayuki Toshima , Nobuo Konishi , Yoji Mizutani
发明人： Takayuki Toshima , Nobuo Konishi , Yoji Mizutani
IPC分类号： B05C914
CPC分类号： H01L21/67178 , H01L21/6715
摘要： In an organic insulating film coating apparatus, an organic insulating film is applied onto a wafer by a spin coating. Thereafter, the wafer is subjected to heat processing and an inorganic insulating film is applied onto the wafer by a spin coating in an inorganic insulating film coating apparatus. After the coating of the inorganic insulating film, the wafer is subjected to aging processing and exchange-chemical coating processing. Thereafter, a solvent in the coating film is removed in a low-temperature heat processing apparatus and a low-oxygen and high-temperature heat processing apparatus, and thermal processing is performed for the wafer in a low-oxygen curing and cooling processing apparatus. The low-temperature heat processing apparatus, the low-oxygen and high-temperature heat processing apparatus, a delivery section for the wafer between the low-temperature heat processing apparatus and the low-oxygen and high-temperature heat processing apparatus, and a delivery section for the wafer between the low-oxygen and high-temperature heat processing apparatus and the low-oxygen curing and cooling processing apparatus are brought to low-oxygen atmospheres.
摘要翻译：在有机绝缘膜涂覆装置中，通过旋涂将有机绝缘膜施加到晶片上。此后，对晶片进行热处理，并且通过无机绝缘膜涂覆设备中的旋涂将无机绝缘膜施加到晶片上。在无机绝缘膜的涂覆之后，对晶片进行老化处理和交换化学涂覆处理。然后，在低温热处理装置和低氧高温加热装置中除去涂膜中的溶剂，在低氧固化和冷却处理装置中对晶片进行热处理。低温热处理装置，低氧高温加热装置，低温加热装置与低氧高温加热装置之间的晶片输送部，输送部在低氧和高温热处理装置和低氧固化和冷却处理装置之间的晶片的截面被带到低氧气氛。

8. 发明授权

US06257778B1 Method for developing front surface of substrate with improved developing function of developing solution and apparatus thereof 失效
标题翻译：用于开发具有显影液的显影功能的基板的正面的方法及其装置
公开(公告)号：US06257778B1
公开(公告)日：2001-07-10
申请号：US09243136
申请日：1999-02-03
申请人： Takayuki Toshima , Nobuo Konishi
发明人： Takayuki Toshima , Nobuo Konishi
IPC分类号： G03D500
CPC分类号： G03F7/32 , G03F7/3021
摘要： When the surface of a substrate is developed, a developing solution in low state of development function is supplied to the surface of the substrate. Thereafter, the development function of the supplied developing solution is improved. Thus, the surface of the substrate is developed. When the developing solution is supplied to the surface of the substrate, the developing solution does not develop the surface of the substrate. Thus, even if there is a time lag of the developing solution supplied on the surface, the surface of the substrate is equally developed.
摘要翻译：当显影衬底的表面时，将显影功能低的显影溶液供应到衬底的表面。此后，提供的显影液的显影功能得到改善。因此，显影衬底的表面。当将显影液供给到基板的表面时，显影液不会形成基板的表面。因此，即使在表面上提供的显影溶液存在时间滞后，基板的表面也同样显影。

9. 发明授权

US6143478A Resist processing method 失效
标题翻译：抗蚀加工方法
公开(公告)号：US6143478A
公开(公告)日：2000-11-07
申请号：US81016
申请日：1998-05-19
申请人： Takayuki Toshima , Nobuo Konishi
发明人： Takayuki Toshima , Nobuo Konishi
IPC分类号： H01L21/027 , G03F7/16 , G03F7/40
CPC分类号： G03F7/168
摘要： A resist processing method includes (a), to a substrate having a circuit pattern with an uneven surface formed thereon, coating a photoresist solution to, by doing so, form a photoresist film, (b) subjecting the substrate to heat processing to cause a portion of the photoresist film to be chemically modified to create a modified resist layer of a substantially uniform thickness from the uneven surface of the circuit pattern, and (c) selectively removing only a resist portion unmodified at the step (b) to leave a modified resist layer on the uneven surface of the circuit pattern.
摘要翻译：抗蚀剂处理方法包括：（a）对具有形成在其上的不平坦表面的电路图案的基板，通过涂布光致抗蚀剂溶液，形成光致抗蚀剂膜，（b）对基板进行加热处理，使光致抗蚀剂膜的部分被化学改性以从电路图案的不平坦表面形成具有基本均匀厚度的改性抗蚀剂层，以及（c）仅在步骤（b）仅选择性地除去未修饰的抗蚀剂部分，以留下经修饰的抗蚀剂层在电路图案的不平坦表面上。

10. 发明授权

US06551400B2 Coating apparatus 失效
标题翻译：涂装设备
公开(公告)号：US06551400B2
公开(公告)日：2003-04-22
申请号：US09816389
申请日：2001-03-26
申请人： Keizo Hasbe , Shuuichi Nishikido , Nobuo Konishi , Takayuki Toshima , Kazutoshi Yoshioka
发明人： Keizo Hasbe , Shuuichi Nishikido , Nobuo Konishi , Takayuki Toshima , Kazutoshi Yoshioka
IPC分类号： B05C502
CPC分类号： G03F7/162 , B05C11/08
摘要： A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.
摘要翻译：将抗蚀剂溶液的溶剂从溶剂供应喷嘴滴落到由旋转卡盘保持的半导体晶片的表面上。半导体晶片通过旋转卡盘旋转，以将抗蚀剂溶液扩散到半导体晶片W的整个表面上。同时，将抗蚀剂溶液从抗蚀剂溶液供应喷嘴滴落到半导体晶片上并在溶剂之后扩散。在处理过程中，通过关闭处理容器的盖子将处理空间与外部空气隔离，将喷射的溶剂供入处理空间。因此，处理空间被溶剂雾填满。在提供有溶剂的处理空间中，可以抑制溶剂从抗蚀剂溶液中的蒸发。在半导体晶片W的边缘上形成具有均匀膜厚的抗蚀剂溶液膜。

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