专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5192016A Methods for manufacturing tubes filled with powdery and granular substances 失效
标题翻译：制造用粉末和颗粒物质填充的管道的方法
公开(公告)号：US5192016A
公开(公告)日：1993-03-09
申请号：US835957
申请日：1992-02-21
申请人： Nobuo Araki , Takeji Kagami , Yoji Chatani , Shunichi Kikuta , Iwao Yamada , Masao Kamada , Seiji Hashimoto , Shuichi Ueno , Takeshi Fukui , Takumi Nakamura , Nobuo Mizuhashi , Yasushi Ishikawa
发明人： Nobuo Araki , Takeji Kagami , Yoji Chatani , Shunichi Kikuta , Iwao Yamada , Masao Kamada , Seiji Hashimoto , Shuichi Ueno , Takeshi Fukui , Takumi Nakamura , Nobuo Mizuhashi , Yasushi Ishikawa
IPC分类号： B23K35/40 , C21C7/00
CPC分类号： C21C7/0056 , B23K35/406 , B23K2035/408
摘要： A method of manufacturing tubes filled with powdery and/or granular substances, such as flux-cored welding wires. A tube filled with a powdery and/or granular substance is continuously manufactured by forming a metal strip being fed in its longitudinal direction into an unwelded tube (1a) using forming rolls (2), feeding a powdery and/or granular substance (F) into the unwelded tube (1a) being formed through its opening, butt-welding together fringing edges of the opening, and reducing the diameter of the welded tube (1b). An allowable minimum heat input below which cold cracking occurs and a maximum allowable heat input above which spatters whose diameter is not smaller than 0.83 times the inside diameter of the finished tube are generated are determined in advance, and the butt welding is performed with a heat input larger than the allowable minimum heat input and smaller than the allowable maximum heat input. This eliminates the risk of breaking in reducing the diameter of the welded tube (1b) filled with the powdery and/or granular substance (F).
摘要翻译： PCT No.PCT / JP91 / 00836 Sec。一九九二年二月二十一日 102（e）日期1992年2月21日PCT提交1991年6月21日PCT公布。出版物WO91 / 日期：1991年12月26日。一种制造填充有粉末状和/或粒状物质的管的方法，例如药芯焊丝。通过使用成型辊（2），将粉末状和/或粒状物质（F）进料的方式，将长条状的金属带形成未焊接管（1a），连续地制造填充了粉末状和/或粒状物质的管，通过其开口形成未焊接的管（1a），将开口的边缘对接在一起，并减小焊接管（1b）的直径。产生低于其的低容许最小热输入，并且产生直径不小于成品管的内径的0.83倍的飞溅的最大允许热输入，并预先确定对接焊输入大于允许的最小热输入，小于允许的最大热输入。这消除了在减小填充有粉末状和/或颗粒状物质（F）的焊接管（1b）的直径时破裂的风险。

2. 发明授权

US08546151B2 Method for manufacturing magnetic storage device and magnetic storage device 有权
标题翻译：磁存储装置和磁存储装置的制造方法
公开(公告)号：US08546151B2
公开(公告)日：2013-10-01
申请号：US12528854
申请日：2008-02-25
申请人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
发明人： Haruo Furuta , Shuichi Ueno , Ryoji Matsuda , Tatsuya Fukumura , Takeharu Kuroiwa , Lien-Chang Wang , Eugene Chen , Yiming Huai
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , H01L27/228
摘要： Disclosed is a method for manufacturing a magnetic storage device comprising a TMR element, which comprises a step for forming an insulting film on an interlayer insulating film provided with a wiring layer, an opening formation step for forming an opening in the insulating film so that the wiring layer is exposed therefrom, a metal layer formation step for forming a metal layer on the insulating layer so that the opening is filled therewith, a CMP step for polishing and removing the metal layer on the insulating layer by a CMP method and forming the metal layer remaining in the opening into a lower electrode, and a step for forming a TMR element on the lower electrode. Also disclosed is a magnetic storage device comprising an interlayer insulating film provided with a wiring layer, an insulating film formed on the interlayer insulating film, an opening formed in the insulating film so that the wiring layer is exposed therefrom, a barrier metal layer provided so as to cover the inner surface of the opening, a lower electrode formed on the barrier metal so as to fill the opening, and a TMR element formed on the lower electrode.
摘要翻译：公开了一种制造包括TMR元件的磁存储装置的方法，该方法包括在具有布线层的层间绝缘膜上形成绝缘膜的步骤，用于在绝缘膜上形成开口的开口形成步骤，布线层暴露于其中，金属层形成步骤用于在绝缘层上形成金属层以使其开口被填充; CMP步骤，用于通过CMP方法在绝缘层上抛光和去除金属层，并形成金属剩余在开口中的层形成下电极，以及在下电极上形成TMR元件的步骤。还公开了一种磁存储装置，其包括设置有布线层的层间绝缘膜，形成在层间绝缘膜上的绝缘膜，形成在绝缘膜中的开口，使得布线层暴露于其中，阻挡金属层设置为为了覆盖开口的内表面，形成在阻挡金属上以便填充开口的下电极和形成在下电极上的TMR元件。

3. 发明授权

US08258592B2 Semiconductor device including a magnetic tunnel junction device including a laminated structure and manufacturing method therefor 有权
标题翻译：包括具有叠层结构的磁性隧道结装置及其制造方法的半导体装置
公开(公告)号：US08258592B2
公开(公告)日：2012-09-04
申请号：US12463865
申请日：2009-05-11
申请人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
发明人： Ryoji Matsuda , Shuichi Ueno , Haruo Furuta , Takashi Takenaga , Takeharu Kuroiwa
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A semiconductor device having a MTJ device excellent in operating characteristics and a manufacturing method therefor are provided. The MTJ device is formed of a laminated structure which is obtained by laminating a lower magnetic film, a tunnel insulating film, and an upper magnetic film in this order. The lower and upper magnetic films contain noncrystalline or microcrystalline ferrocobalt boron (CoFeB) as a constituent material. The tunnel insulating film contains aluminum oxide (AlOx) as a constituent material. A CAP layer is formed over the upper magnetic film and a hard mask is formed over the CAP layer. The CAP layer contains a substance of crystalline ruthenium (Ru) as a constituent material and the hard mask contains a substance of crystalline tantalum (Ta) as a constituent material. The film thickness of the hard mask is larger than that of the CAP layer.
摘要翻译：提供一种具有优异的操作特性的MTJ装置的半导体装置及其制造方法。 MTJ装置由层叠结构形成，其通过依次层叠下磁性膜，隧道绝缘膜和上磁性膜而获得。下部和上部磁性膜含有非结晶或微晶铁硼（CoFeB）作为构成材料。隧道绝缘膜包含氧化铝（AlOx）作为构成材料。在上磁性膜上形成CAP层，在CAP层上形成硬掩模。 CAP层包含结晶钌（Ru）作为构成材料的物质，硬掩模含有结晶钽（Ta）作为构成材料的物质。硬掩模的膜厚大于CAP层的膜厚。

4. 发明授权

US08013407B2 Magnetic memory device having a recording layer 有权
标题翻译：具有记录层的磁存储器件
公开(公告)号：US08013407B2
公开(公告)日：2011-09-06
申请号：US12399760
申请日：2009-03-06
申请人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Shuichi Ueno , Kiyoshi Kawabata
发明人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Shuichi Ueno , Kiyoshi Kawabata
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.
摘要翻译：提供了一种在写特性上稳定的磁存储器件。磁存储器件具有记录层。记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分小于垂直于易轴方向的长度。第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。

5. 发明申请

US20100193831A1 EPOXY RESIN COMPOSITION, CURED OBJECT OBTAINED THEREFROM, AND LIGHT-EMITTING DIODE 有权
标题翻译：环氧树脂组合物，由其获得的固化对象和发光二极管
公开(公告)号：US20100193831A1
公开(公告)日：2010-08-05
申请号：US12678166
申请日：2008-09-22
申请人： Takashi Sato , Shuichi Ueno , Takeshi Koyama
发明人： Takashi Sato , Shuichi Ueno , Takeshi Koyama
IPC分类号： H01L23/29 , C08L63/00 , C08K5/13
CPC分类号： C08G59/24 , C08G59/226 , C08G59/42 , C08L63/00 , H01L33/56 , H01L51/5237 , H01L51/5246 , C08L2666/22
摘要： Provided are an epoxy resin composition including acid anhydrides (A) and epoxy resins (B), in which: (a) cyclohexane-1,2,4-tricarboxylic acid-1,2-anhydride accounts for 50 to 90 mass % of the acid anhydrides (A); (b) an alicyclic epoxy resin compound accounts for 30 to 90 mass % of the epoxy resins (B) and an epoxy resin compound represented by the following general formula (1) accounts for 10 to 50 mass % of the epoxy resins (B); and (c) contents of the acid anhydrides (A) and the epoxy resins (B) are such that a blending equivalent ratio between the acid anhydrides and the epoxy resins ranges from 0.4 to 0.7, a cured product of the composition, and a light-emitting diode. The epoxy resin composition has the following characteristics. That is, (1) the composition has a low viscosity after the mixing, a low degree of viscosity increase in standing at room temperature, and excellent workability, (2) the composition has satisfactory curability even when no curing accelerator is added, and (3) a cured product is colorless and transparent, has crack resistance, and changes its color to a small extent with long-term light irradiation and heating. The composition is suitable for an encapsulant for a photoelectric conversion element such as a blue LED or white LED. (In the formula, R's each independently represent a hydrogen atom or a methyl group, m represents an integer of 1 to 3, and n represents an integer of 2 to 8.)
摘要翻译：提供一种包含酸酐（A）和环氧树脂（B））的环氧树脂组合物，其中：（a）环己烷-1,2,4-三羧酸-1,2-酐占50〜90质量％酸酐（A）; （b）环氧树脂（B）的脂环族环氧树脂化合物占30〜90质量％，由通式（1）表示的环氧树脂化合物占环氧树脂（B）的10〜50质量％ ; 和（c）酸酐（A）和环氧树脂（B）的含量使得酸酐与环氧树脂的混合当量比为0.4〜0.7，组合物的固化物和光发光二极管。环氧树脂组合物具有以下特征。也就是说，（1）组合物在混合后具有低粘度，在室温下的静置粘度增加低，加工性优异，（2）即使不加入固化促进剂，组合物也具有令人满意的固化性，（ 3）固化产物无色透明，具有抗裂性，并在长时间的光照射和加热下颜色变化很小。该组合物适用于诸如蓝色LED或白色LED的光电转换元件的密封剂。（式中，R 3各自独立地表示氢原子或甲基，m表示1〜3的整数，n表示2〜8的整数。）

6. 发明申请

US20090250776A1 MAGNETIC MEMORY DEVICE 有权
标题翻译：磁记忆装置
公开(公告)号：US20090250776A1
公开(公告)日：2009-10-08
申请号：US12399760
申请日：2009-03-06
申请人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Shuichi Ueno , Kiyoshi Kawabata
发明人： Takashi Takenaga , Takeharu Kuroiwa , Hiroshi Takada , Shuichi Ueno , Kiyoshi Kawabata
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L43/08
摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.
摘要翻译：提供了一种写入特性稳定的磁存储器件。磁存储器件具有记录层。记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分小于垂直于易轴方向的长度。第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。

7. 发明申请

US20090237989A1 MAGNETIC MEMORY DEVICE 审中-公开
标题翻译：磁记忆装置
公开(公告)号：US20090237989A1
公开(公告)日：2009-09-24
申请号：US12476536
申请日：2009-06-02
申请人： Yoshinori OKUMURA , Shuichi Ueno , Haruo Furuta
发明人： Yoshinori OKUMURA , Shuichi Ueno , Haruo Furuta
IPC分类号： G11C11/14
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (1/3)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.
摘要翻译：位线的宽度和厚度分别表示为W1和T1，数字线的厚度表示为T2，从数字线的中心到厚度方向的中心到自由层的中心的距离的厚度方向上的MTJ元件表示为L1。数字线的宽度表示为W2，从厚度方向的位线的中心到厚度方向的MTJ元件的自由层的中心的距离表示为L2。距离L1和L2以及横截面积S1和S2以如下方式设定：当L1 / L2> = 1时，（1/3）（L1 / L2）<= S2 / S1 <= 1，并且当L1 / L2 <= 1时，满足1 <= S2 / S1 <= 3（L1 / L2）的关系。

8. 发明申请

US20080266939A1 Magnetic memory device 失效
标题翻译：磁存储器件
公开(公告)号：US20080266939A1
公开(公告)日：2008-10-30
申请号：US12213505
申请日：2008-06-20
申请人： Yoshinori Okumura , Shuichi Ueno , Haruo Furuta
发明人： Yoshinori Okumura , Shuichi Ueno , Haruo Furuta
IPC分类号： G11C11/02
CPC分类号： H01L43/08 , B82Y10/00 , G11C11/15 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (⅓)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.
摘要翻译：位线的宽度和厚度分别表示为W 1和T 1，数字线的厚度表示为T 2，并且从数字线的中心到厚度方向的中心的距离在厚度方向上的MTJ元件的自由层表示为L 1。数字线的宽度表示为W 2，并且从厚度方向的位线的中心到厚度方向上的MTJ元件的自由层的中心的距离表示为L 2。距离L 1和L 2以及横截面积S 1和S 2被设定为当L 1 / L 2> = 1时，关于（1/3）（L 1 / L 2 ）满足<= S 2 / S 1 <= 1，并且当L 1 / L 2 <= 1时，满足1 <= S 2 / S 1 <= 3（L 1 / L 2）的关系。

9. 发明申请

US20080168649A1 Magnetic recording element and method of manufacturing magnetic recording element 审中-公开
标题翻译：磁记录元件及制造磁记录元件的方法
公开(公告)号：US20080168649A1
公开(公告)日：2008-07-17
申请号：US12076151
申请日：2008-03-14
申请人： Shinroku Maejima , Shuichi Ueno , Takashi Takenaga , Takeharu Kuroiwa
发明人： Shinroku Maejima , Shuichi Ueno , Takashi Takenaga , Takeharu Kuroiwa
IPC分类号： G11B5/127
CPC分类号： H01L43/12 , G11C11/16 , H01L27/228 , Y10T29/49041 , Y10T29/49048
摘要： A photolithographic process using an X-direction delimiting mask (S11) for aligning respective side faces of a TMR element (1) and a strap (5) situated in a negative X side is performed, to shape the TMR element (1) and the strap (5) into desired configurations. The X-direction delimiting mask (S11) includes a straight edge and is disposed such that the straight edge is parallel to a Y direction and crosses both the TMR element (1) and the strap (5) in plan view. In use of the X-direction delimiting mask (S11), respective portions of the TMR element (1) and the strap (5) situated in a positive X side relative to the straight edge in plan view are covered with the X-direction delimiting mask (S11).
摘要翻译：执行使用用于对准位于负X侧的TMR元件（1）和带（5）的各个侧面的X方向限制掩模（S11）的光刻工艺，以使TMR元件（1）和带（5）成为所需的配置。 X方向限制掩模（S11）包括直边并且被设置为使得直边平行于Y方向，并且在平面图中与TMR元件（1）和带（5）交叉。在使用X方向限制掩模（S11）时，在平面图中相对于直边缘位于正X侧的TMR元件（1）和带子（5）的各个部分被X方向限定掩模（S11）。

10. 发明申请

US20080039591A1 Acid Anhydride Ester and Composition Thereof, and Heat-Curable Resin Composition and Cured Product Thereof 有权
标题翻译：酸酐酯及其组合物和热固性树脂组合物及其固化产物
公开(公告)号：US20080039591A1
公开(公告)日：2008-02-14
申请号：US11835609
申请日：2007-08-08
申请人： Tomohiro Sugawara , Takeshi Koyama , Atsushi Okoshi , Takashi Sato , Shuichi Ueno
发明人： Tomohiro Sugawara , Takeshi Koyama , Atsushi Okoshi , Takashi Sato , Shuichi Ueno
IPC分类号： C08G59/42 , C08L63/00
CPC分类号： C07D307/89 , B33Y70/00
摘要： The present invention provides an acid anhydride ester obtained by esterifying cyclohexane-1,2,4-tricarboxylic acid-1,2-anhydride and a composition of the ester, and a heat-curable resin composition and a cured product of the composition. _Provided is an epoxy resin composition using the acid anhydride ester as a curing agent for an epoxy resin, the epoxy resin composition having, for example, the following properties (1), (2), and (3): (1) the epoxy resin composition has a low viscosity at room temperature, so the components of the composition can be favorably blended with each other, (2) the acid anhydride ester has a low vapor pressure at curing temperature, so no evaporation loss occurs after curing, and the intended design of blend is capable, and (3) a cured product to be made from the composition is colorless and transparent, and changes its color to a small extent even when the product is irradiated with light or heated for a long time period. The composition is suitably used as, for example, an encapsulant for a photoelectric conversion element such as a blue LED or a white LED, a molded article, a coating, or an adhesive.
摘要翻译：本发明提供通过酯化环己烷-1,2,4-三羧酸-1,1-酐和酯的组合物得到的酸酐酯，以及热固性树脂组合物和该组合物的固化物。提供使用酸酐酯作为环氧树脂固化剂的环氧树脂组合物，该环氧树脂组合物具有例如以下性质（1），（2）和（3）：（1）环氧树脂树脂组合物在室温下的粘度低，因此可以有利地将组合物的组分相互混合，（2）酸酐在固化温度下蒸气压低，固化后不会发生蒸发损失，共混物的预期设计是能够的，并且（3）由该组合物制成的固化产物是无色透明的，并且即使当产品被光照射或长时间加热时也将它的颜色变化很小。该组合物适合用作例如蓝色LED或白色LED的光电转换元件的密封剂，成型品，涂层或粘合剂。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式