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    • 1. 发明申请
    • Vacuum Deposition Apparatus of the Winding Type
    • 绕线式真空沉积设备
    • US20070259105A1
    • 2007-11-08
    • US11630761
    • 2006-02-14
    • Nobuhiro HayashiShin YokiIsao TadaAtsushi Nakatsuka
    • Nobuhiro HayashiShin YokiIsao TadaAtsushi Nakatsuka
    • C23C14/56
    • C23C14/042C23C14/54C23C14/562
    • The problem solved by this Invention is to provide a vacuum evaporation deposition method of the winding type and a vacuum evaporation deposition apparatus of the winding type which can form a metal film on a base film made of single layer plastic film without thermal deformation and with superior productivity. To solve the above problem, there are provided an electron beam irradiator 21 for irradiating an electron beam onto a film material 12 arranged between an unwinding roller 13 and a deposition source 16; an auxiliary roller 18 for guiding the film 12 in contact with the deposited metal layer and arranged between a can roller 14 and a winding roller 15; a DC bias power source 22 for applying a DC voltage between the auxiliary roller 18 and the can roller 14; electricity removing unit 23 for removing electricity from the film 12 and arranged between the can roller 14 and the winding roller 15. The electricity removing unit 23 is a plasma generating source of the DC dipolar discharge type wherein one of its electrodes is earthed.
    • 本发明解决的问题是提供一种绕线式真空蒸发沉积方法和一种可在无热变形的单层塑料薄膜制成的基膜上形成金属薄膜的卷绕型真空蒸镀装置, 生产率。 为了解决上述问题,提供了一种用于将电子束照射到布置在退绕辊13和沉积源16之间的薄膜材料12上的电子束照射器21; 用于引导与沉积的金属层接触并且布置在罐辊14和卷绕辊15之间的膜12的辅助辊18; 用于在辅助辊18和罐辊14之间施加DC电压的DC偏压电源22; 电除去单元23,用于从薄膜12移除电力并且布置在罐辊14和卷绕辊15之间。 除电单元23是其中一个电极接地的直流偶极放电类型的等离子体发生源。
    • 3. 发明授权
    • Vacuum deposition apparatus of the winding type
    • 卷绕式真空沉积设备
    • US07670433B2
    • 2010-03-02
    • US11630761
    • 2006-02-14
    • Nobuhiro HayashiShin YokoiIsao TadaAtsushi Nakatsuka
    • Nobuhiro HayashiShin YokoiIsao TadaAtsushi Nakatsuka
    • C23C16/00C23C14/00
    • C23C14/042C23C14/54C23C14/562
    • The problem solved by this Invention is to provide a vacuum evaporation deposition method of the winding type and a vacuum evaporation deposition apparatus of the winding type which can form a metal film on a base film made of single layer plastic film without thermal deformation and with superior productivity. To solve the above problem, there are provided an electron beam irradiator 21 for irradiating an electron beam onto a film material 12 arranged between an unwinding roller 13 and a deposition source 16; an auxiliary roller 18 for guiding the film 12 in contact with the deposited metal layer and arranged between a can roller 14 and a winding roller 15; a DC bias power source 22 for applying a DC voltage between the auxiliary roller 18 and the can roller 14; electricity removing unit 23 for removing electricity from the film 12 and arranged between the can roller 14 and the winding roller 15. The electricity removing unit 23 is a plasma generating source of the DC dipolar discharge type wherein one of its electrodes is earthed.
    • 本发明解决的问题是提供一种绕线式真空蒸发沉积方法和一种可在无热变形的单层塑料薄膜制成的基膜上形成金属薄膜的卷绕型真空蒸镀装置, 生产率。 为了解决上述问题,提供了一种用于将电子束照射到布置在退绕辊13和沉积源16之间的薄膜材料12上的电子束照射器21; 用于引导与沉积的金属层接触并且布置在罐辊14和卷绕辊15之间的膜12的辅助辊18; 用于在辅助辊18和罐辊14之间施加DC电压的DC偏压电源22; 电力去除单元23,用于从膜12移除电力并且布置在罐辊14和卷绕辊15之间。除电单元23是其中一个电极接地的直流偶极放电类型的等离子体发生源。
    • 4. 发明申请
    • Vacuum evaporation deposition method of the winding type and vacuum evaporation deposition apparatus of the same
    • 卷取式真空蒸镀法和真空蒸镀沉积装置相同
    • US20070134426A1
    • 2007-06-14
    • US10574715
    • 2004-11-12
    • Nobuhiro HayashiTakayoshi HironoIsao TadaAtsushi Nakatsuka
    • Nobuhiro HayashiTakayoshi HironoIsao TadaAtsushi Nakatsuka
    • B05D3/00C23C8/00H05B6/02C23C16/00B29C71/04
    • C23C14/562C23C14/022G11B5/85
    • The invention provides a vacuum evaporation deposition method of the winding type and a vacuum evaporation deposition apparatus of the winding type which can form a metal film on a base film made of a single layer of insulating material such as plastic film without thermal deformation, and which is superior in productivity. An electron beam irradiator 21 irradiates an electron beam onto an insulating material base film 12 before deposition of metal, and a DC bias power source 22 applies bias voltage between an auxiliary roller 18 for guiding the base film 12 with metal film deposited thereon and a can roller 14, whereby the base film 12 charged by the irradiation of the electron beam before the deposition of metal film, is made to be in close contact with the can roller 14. The base film 12 after deposition of metal film is made to be in close contact with the can roller 14 by the bias voltage applied between the auxiliary roller 18 connected electrically to the metal film and the can roller 14.
    • 本发明提供一种绕线式真空蒸发沉积方法和一种绕线式的真空蒸发沉积设备,该真空蒸镀沉积设备可以在由单层绝缘材料如塑料薄膜制成的基膜上形成金属膜而不会发生热变形, 生产力优越。 电子束照射器21在沉积金属之前将电子束照射到绝缘材料基膜12上,并且DC偏压电源22在用于引导基膜12的辅助辊18与其上沉积有金属膜的辅助辊18之间施加偏置电压, 辊14,由此通过在沉积金属膜之前通过电子束的照射而充电的基膜12被制成与罐辊14紧密接触。 通过施加在与金属膜电连接的辅助辊18和罐辊14之间的偏压施加金属膜沉积后的基膜12与罐辊14紧密接触。
    • 6. 发明申请
    • TAKE-UP TYPE VACUUM VAPOR DEPOSITION APPARATUS
    • 升降式真空蒸发器沉积装置
    • US20100006030A1
    • 2010-01-14
    • US12305387
    • 2007-06-07
    • Nobuhiro HayashiTakayoshi HironoIsao TadaAtsushi NakatsukaKenji Komatsu
    • Nobuhiro HayashiTakayoshi HironoIsao TadaAtsushi NakatsukaKenji Komatsu
    • C23C16/48C23C16/00
    • C23C14/562C23C14/02C23C14/5826
    • To provide a take up type vacuum vapor deposition apparatus capable of suppressing generation of a thermally-affected area on a film without lowering productivity. A take-up type vacuum vapor deposition apparatus according to the present invention includes: a payout roller configured to successively pay out a film ; a take-up roller configured to take up the film paid out from the payout roller; a cooling roller disposed between the payout roller and the take-up roller and configured to cool the film by coming into close contact with the film ; an evaporation source that faces the cooling roller and configured to deposit an evaporation material on the film; and an electron beam irradiator disposed between the payout roller and the evaporation source and configured to irradiate the film with an electron beam while the film is traveling. In the take-up type vacuum vapor deposition apparatus, the electron beam irradiator includes a filament configured to discharge electrons by electrical heating and DC generation means for supplying a direct current to the filament.
    • 提供能够抑制膜上的热影响区域的产生而不降低生产率的卷取式真空蒸镀装置。 根据本发明的卷取式真空蒸镀装置包括:延伸辊,其配置成连续地支付膜; 卷取辊,其构造成从所述支付辊上取出所述胶片; 冷却辊,其布置在所述支承辊和所述卷取辊之间,并且构造成通过与所述膜紧密接触来冷却所述膜; 蒸发源,其面向所述冷却辊并且构造成将蒸发材料沉积在所述膜上; 以及电子束照射器,其设置在所述分支辊和所述蒸发源之间并且被配置为在所述膜行进时用电子束照射所述膜。 在卷取式真空蒸镀装置中,电子束照射装置具备:通过电加热而放电的灯丝,以及向灯丝供给直流电的直流产生装置。
    • 8. 发明授权
    • Winding type plasma CVD apparatus
    • 卷绕式等离子体CVD装置
    • US07896968B2
    • 2011-03-01
    • US11792810
    • 2006-05-10
    • Takayoshi HironoIsao TadaAtsushi NakatsukaMasashi KikuchiHideyuki OgataHiroaki KawamuraKazuya SaitoMasatoshi Sato
    • Takayoshi HironoIsao TadaAtsushi NakatsukaMasashi KikuchiHideyuki OgataHiroaki KawamuraKazuya SaitoMasatoshi Sato
    • C23C16/00C23F1/00H01L21/306
    • H01J37/3277B08B7/00C23C16/4405C23C16/46C23C16/5096C23C16/545H01J37/32009
    • The object of this invention is to provide a winding type plasma CVD apparatus in which quality of a layer can be made uniform by supplying a reaction gas uniformly to a deposition area of a film, and can perform a self-cleaning process of a deposition portion in the path of deposition onto the film.A film (22) is supported between a pair of movable rollers (33, 34) arranged on the upstream side and downstream side of the deposition portion (25) with regard to the traveling direction of the film, and then the film (22) is made to travel substantially linearly at the deposition position. Consequently, the distance between a shower plate (37) and the film (22) is kept constant, and the quality of the layer is made homogeneous. The film is heated by means of a metal belt (40) traveling simultaneously on the back side of the film. The moveable rollers (33, 34) ascend from the deposition position to the self-cleaning position, and the film (22) can be separated from the shower plate (37). Self-cleaning can be carried out in the path of the deposition onto the film by closing the aperture of a mask (51) with a shutter (65), thereby preventing leakage of cleaning gas.
    • 本发明的目的是提供一种绕线式等离子体CVD装置,通过将反应气体均匀地供应到膜的沉积区域,可以使层的质量均匀,并且可以进行沉积部分的自清洁处理 在沉积到膜上的路径。 相对于膜的行进方向,膜(22)被支撑在布置在沉积部分(25)的上游侧和下游侧的一对可动辊(33,34)之间,然后,膜(22) 使其在沉积位置大致线性地移动。 因此,喷淋板(37)和膜(22)之间的距离保持恒定,并且使层的质量均匀。 薄膜通过金属带(40)加热,同时在薄膜背面行进。 可移动辊(33,34)从沉积位置上升到自清洁位置,并且膜(22)可以与喷淋板(37)分离。 通过用挡板(65)封闭掩模(51)的孔径,可以在沉积到膜上的路径中进行自清洁,从而防止清洁气体的泄漏。
    • 9. 发明申请
    • Winding Type Plasma Cvd Apparatus
    • 绕组式等离子体Cvd装置
    • US20080006206A1
    • 2008-01-10
    • US11792810
    • 2006-05-10
    • Takayoshi HironoIsao TadaAtsushi NakatsukaMasashi KikuchiHideyuki OgataHiroaki KawamuraKazuya SaitoMasatoshi Sato
    • Takayoshi HironoIsao TadaAtsushi NakatsukaMasashi KikuchiHideyuki OgataHiroaki KawamuraKazuya SaitoMasatoshi Sato
    • C23C16/505C23C16/44H01L21/205
    • H01J37/3277B08B7/00C23C16/4405C23C16/46C23C16/5096C23C16/545H01J37/32009
    • The object of this invention is to provide a winding type plasma CVD apparatus in which quality of a layer can be made uniform by supplying a reaction gas uniformly to a deposition area of a film, and can perform a self-cleaning process of a deposition portion in the path of deposition onto the film. A film (22) is supported between a pair of movable rollers (33, 34) arranged on the upstream side and downstream side of the deposition portion (25) with regard to the traveling direction of the film, and then the film (22) is made to travel substantially linearly at the deposition position. Consequently, the distance between a shower plate (37) and the film (22) is kept constant, and the quality of the layer is made homogeneous. The film is heated by means of a metal belt (40) traveling simultaneously on the back side of the film. The moveable rollers (33,34) ascend from the deposition position to the self-cleaning position, and the film (22) can be separated from the shower plate (37). Self-cleaning can be carried out in the path of the deposition onto the film by closing the aperture of a mask (51) with a shutter (65), thereby preventing leakage of cleaning gas.
    • 本发明的目的是提供一种绕线式等离子体CVD装置,通过将反应气体均匀地供应到膜的沉积区域,可以使层的质量均匀,并且可以进行沉积部分的自清洁处理 在沉积到膜上的路径。 相对于膜的行进方向,膜(22)被支撑在布置在沉积部分(25)的上游侧和下游侧的一对可动辊(33,34)之间,然后,膜(22) 使其在沉积位置基本线性地行进。 因此,喷淋板(37)和膜(22)之间的距离保持恒定,并且使层的质量均匀。 薄膜通过金属带(40)加热,同时在薄膜背面行进。 可移动辊(33,34)从沉积位置上升到自清洁位置,并且膜(22)可以与喷淋板(37)分离。 通过用挡板(65)封闭掩模(51)的孔径,可以在沉积到膜上的路径中进行自清洁,从而防止清洁气体的泄漏。
    • 10. 发明申请
    • Take-Up Type Vacuum Deposition Apparatus
    • 吸收式真空沉积装置
    • US20100307414A1
    • 2010-12-09
    • US12867254
    • 2008-04-14
    • Shin YokoiTsunehito NomuraAtsushi NakatsukaIsao Tada
    • Shin YokoiTsunehito NomuraAtsushi NakatsukaIsao Tada
    • C23C14/14C23C14/28C23C14/58
    • C23C14/562C23C14/541
    • [Object] To provide a take-up type vacuum deposition apparatus capable of preventing a thermal deformation of a base material due to charged particles leaked from a neutralization unit without an increase in size of the apparatus.[Solving Means] A take-up type vacuum deposition apparatus according to the present invention includes a charge capturing body provided between a cooling can roller and a neutralization unit that captures charged particles floating from the neutralization unit toward the can roller. Accordingly, the charged particles leaked from the neutralization unit are prevented from reaching the can roller, which suppresses variation in a bias potential applied to the can roller for bringing it into close contact with a base material, and keeps stable electrostatic force with respect to the base material. Accordingly, adhesion force between the base material and the cooling roller can be kept stable, and thus a thermal deformation of the base material can be suppressed.
    • 本发明提供一种卷取式真空沉积设备,其能够防止由于中和单元泄漏的带电粒子而引起的基体材料的热变形,而不会增加设备的尺寸。 本发明的卷取式真空沉积设备包括:一个设置在冷却罐辊和中和装置之间的电荷捕获体,该中和装置捕获从中和单元向罐辊移动的带电粒子。 因此,从中和单元泄漏的带电粒子被防止到达罐辊,这抑制了施加到罐辊的偏置电位的变化,使其与基材紧密接触,并且相对于该辊辊保持稳定的静电力 基材。 因此,可以保持基材和冷却辊之间的粘合力稳定,能够抑制基材的热变形。