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    • 1. 发明授权
    • Semiconductor laser device capable of suppressing leakage current in a light emitting end surface and method for manufacturing same
    • 能够抑制发光端面的漏电流的半导体激光装置及其制造方法
    • US06826218B2
    • 2004-11-30
    • US09987921
    • 2001-11-16
    • Noboru OshimaMasahiko SakataMakoto Yokota
    • Noboru OshimaMasahiko SakataMakoto Yokota
    • H01S500
    • H01S5/028H01S5/0282
    • For evaporating a protective coating on a light emitting end surface 51a of a laser chip 51, there is formed first an Si film 52a, which is free from generation of oxygen due to decomposition. Thus, there is created a coating in the vicinity of the light emitting end surface 51a immediately after start of evaporation process under conditions of low partial pressure of oxygen. At the same time, in the later evaporation process of the protective coating 52b, if oxygen is generated due to decomposition of the evaporation material Al2O3, and oxygen partial pressure is increased, collision or bonding of the oxygen with the end surface 51a is prevented, thereby decreasing damages given to the end surface 51a in the process of protective coating creation. Further, the Si film 52a has a film thickness as small as approx. 20 Å. This controls generation of leakage current in the Si film 52a (or the end surface 51a), and prevents negative influence on oscillation characteristics.
    • 为了蒸发激光芯片51的发光端面51a上的保护涂层,首先形成由于分解而不产生氧的Si膜52a。 因此,在氧分压低的条件下,在蒸发处理开始后立即在发光端面51a附近形成涂层。 同时,在保护涂层52b的后期蒸发过程中,如果由于蒸发材料Al 2 O 3的分解而产生氧,并且氧分压增加,则防止了氧与端面51a的碰撞或结合, 从而在保护涂层的制造过程中减少对端面51a的损伤。 此外,Si膜52a的膜厚度约为 20Å。 这可以控制Si膜52a(或端面51a)中的漏电流的产生,并且防止对振荡特性的负面影响。