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1. 发明申请

US20100041157A1 Analysis apparatus and analysis method of chlorosilanes 有权
标题翻译：氯硅烷分析仪器及分析方法
公开(公告)号：US20100041157A1
公开(公告)日：2010-02-18
申请号：US12462945
申请日：2009-08-11
申请人： Noboru Chikusa , Masaki Itoh
发明人： Noboru Chikusa , Masaki Itoh
IPC分类号： G01N33/00 , B01J19/00
CPC分类号： G01N31/02
摘要： The problem to be solved is to provide an analysis apparatus and analysis method of chlorosilanes capable of stably carrying out an analysis with less contamination. An analysis apparatus of chlorosilanes includes a vaporizer 10 for vaporizing chlorosilanes L and an analyzer for analyzing materials r1 and r2 remained by vaporizing. In the analysis apparatus, the vaporizer 10 includes a hotplate 11, a cover 12 detachably attached onto the hotplate 11 and configuring a heating chamber 13 with the hotplate 11, and a sample vessel 14 arranged in the heating chamber 13 and having an opening upside capable of storing the chlorosilanes L. The cover 12 includes a supply port 12a for supplying an inert gas or nitrogen gas into the heating chamber 13 and a discharge port 12b for discharging gases in the heating chamber 13.
摘要翻译：要解决的问题是提供能够以较少污染物稳定地进行分析的氯硅烷的分析装置和分析方法。氯硅烷的分析装置包括用于蒸发氯硅烷L的蒸发器10和用于分析通过蒸发保留的材料r1和r2的分析器。在分析装置中，蒸发器10包括加热板11，可拆卸地附接到加热板11上并且配置有加热板11的加热室13的盖12和布置在加热室13中的具有开口上侧的样品容器14 存储氯硅烷L.盖12包括用于向加热室13供给惰性气体或氮气的供给口12a和用于排出加热室13中的气体的排出口12b。

2. 发明授权

US08158072B2 Analysis apparatus and analysis method of chlorosilanes 有权
标题翻译：氯硅烷分析仪器及分析方法
公开(公告)号：US08158072B2
公开(公告)日：2012-04-17
申请号：US12462945
申请日：2009-08-11
申请人： Noboru Chikusa , Masaki Itoh
发明人： Noboru Chikusa , Masaki Itoh
IPC分类号： G01N33/00 , B01J19/00
CPC分类号： G01N31/02
摘要： The problem to be solved is to provide an analysis apparatus and analysis method of chlorosilanes capable of stably carrying out an analysis with less contamination. An analysis apparatus of chlorosilanes includes a vaporizer 10 for vaporizing chlorosilanes L and an analyzer for analyzing materials r1 and r2 remained by vaporizing. In the analysis apparatus, the vaporizer 10 includes a hotplate 11, a cover 12 detachably attached onto the hotplate 11 and configuring a heating chamber 13 with the hotplate 11, and a sample vessel 14 arranged in the heating chamber 13 and having an opening upside capable of storing the chlorosilanes L. The cover 12 includes a supply port 12a for supplying an inert gas or nitrogen gas into the heating chamber 13 and a discharge port 12b for discharging gases in the heating chamber 13.
摘要翻译：要解决的问题是提供能够以较少污染物稳定地进行分析的氯硅烷的分析装置和分析方法。氯硅烷的分析装置包括用于蒸发氯硅烷L的蒸发器10和用于分析通过蒸发保留的材料r1和r2的分析器。在分析装置中，蒸发器10包括加热板11，可拆卸地附接到加热板11上并且配置有加热板11的加热室13的盖12和布置在加热室13中的具有开口上侧的样品容器14 存储氯硅烷L.盖12包括用于向加热室13供给惰性气体或氮气的供给口12a和用于排出加热室13中的气体的排出口12b。

3. 发明申请

US20090158996A1 APPARATUS FOR PRODUCING SINGLE CRYSTAL SILICON 有权
标题翻译：生产单晶硅的装置
公开(公告)号：US20090158996A1
公开(公告)日：2009-06-25
申请号：US12343798
申请日：2008-12-24
申请人： Noboru Chikusa , Teruhisa Kitagawa , Masaki Ito , Takanori Ito
发明人： Noboru Chikusa , Teruhisa Kitagawa , Masaki Ito , Takanori Ito
IPC分类号： C30B15/14
CPC分类号： C30B29/06 , C30B13/00 , C30B13/20 , C30B13/32 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1064
摘要： An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an exothermic ring that has a quartz-coated member covering the conductive member; a support member that supports the exothermic ring and passes through a wall of the housing in a rotatable manner; an operating device that rotates the support member and reciprocates the exothermic ring between a heating position where the exothermic ring is positioned close to the induction heating coil and a stand-by position where the exothermic ring is receded from the heating position; a sealing member that is provided between the wall of the housing and the support member and maintains the hermitic therebetween; and a cooling flow path that is formed in the support member and flows a cooling medium.
摘要翻译：一种用于制造单晶硅的装置，包括：感应加热线圈，设置在多晶硅棒周围，用于熔合多晶硅棒; 放热环，其具有覆盖所述导电构件的石英涂层构件; 支撑构件，其以可旋转的方式支撑放热环并穿过壳体的壁; 操作装置，其使所述支撑构件旋转并使所述放热环在所述放热环位于所述感应加热线圈附近的加热位置和所述放热环从所述加热位置退出的待机位置之间往复运动; 密封构件，其设置在所述壳体的壁与所述支撑构件之间并且在其间保持所述密封构件; 以及冷却流路，其形成在所述支撑部件中并使冷却介质流动。

4. 发明授权

US08313577B2 Apparatus for producing single crystal silicon 有权
标题翻译：单晶硅制造装置
公开(公告)号：US08313577B2
公开(公告)日：2012-11-20
申请号：US12343798
申请日：2008-12-24
申请人： Noboru Chikusa , Teruhisa Kitagawa , Masaki Ito , Takanori Ito
发明人： Noboru Chikusa , Teruhisa Kitagawa , Masaki Ito , Takanori Ito
IPC分类号： C30B35/00 , C30B11/00 , C30B15/00 , C30B21/06 , C30B27/02 , C30B28/10 , C30B30/04
CPC分类号： C30B29/06 , C30B13/00 , C30B13/20 , C30B13/32 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1064
摘要： An apparatus for producing single crystal silicon comprising: an induction heating coil that is disposed around the polycrystalline silicon rod for fusing the polycrystalline silicon rod; an exothermic ring that has a quartz-coated member covering the conductive member; a support member that supports the exothermic ring and passes through a wall of the housing in a rotatable manner; an operating device that rotates the support member and reciprocates the exothermic ring between a heating position where the exothermic ring is positioned close to the induction heating coil and a stand-by position where the exothermic ring is receded from the heating position; a sealing member that is provided between the wall of the housing and the support member and maintains the hermitic therebetween; and a cooling flow path that is formed in the support member and flows a cooling medium.
摘要翻译：一种用于制造单晶硅的装置，包括：感应加热线圈，设置在多晶硅棒周围，用于熔合多晶硅棒; 放热环，其具有覆盖所述导电构件的石英涂层构件; 支撑构件，其以可旋转的方式支撑放热环并穿过壳体的壁; 操作装置，其使所述支撑构件旋转并使所述放热环在所述放热环位于所述感应加热线圈附近的加热位置和所述放热环从所述加热位置退出的待机位置之间往复运动; 密封构件，其设置在所述壳体的壁与所述支撑构件之间并且在其间保持所述密封构件; 以及冷却流路，其形成在所述支撑部件中并使冷却介质流动。

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