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    • 1. 发明专利
    • Method of manufacturing transparent conductive film
    • 制造透明导电膜的方法
    • JP2012033484A
    • 2012-02-16
    • JP2011150220
    • 2011-07-06
    • Nitto Denko Corp日東電工株式会社
    • YAMAZAKI YUKANASHIKI TOMOTAKESUGAWARA HIDEO
    • H01B13/00C23C14/08
    • C23C14/086C23C14/024C23C14/562C23C14/5806
    • PROBLEM TO BE SOLVED: To manufacture a long length of transparent conductive film having a transparent film base material and a crystalline indium-based complex oxide film formed on the base material.SOLUTION: The manufacturing method comprises: an amorphous laminate formation step for forming an amorphous film of indium-based complex oxide containing indium and tetravalent metal on a long length of transparent film base material by sputtering; and a crystallization step for continuously transporting the long length of transparent film base material with the amorphous film formed thereon into a heating furnace, and crystallizing the amorphous film. The indium-based complex oxide preferably contains tetravalent metal of over 0 to not more than 15 pts.wt. with respect to a total of 100 pts.wt. of the indium and the tetravalent metal.
    • 要解决的问题:制造具有形成在基材上的透明膜基材和结晶铟基复合氧化物膜的长度长的透明导电膜。 解决方案:制造方法包括:通过溅射在长度长的透明膜基材上形成含有铟和四价金属的铟系复合氧化物的非晶膜的无定形层压体形成步骤; 以及结晶步骤,用于将长的透明膜基材与其上形成的非晶膜连续输送到加热炉中,并使非晶膜结晶。 铟系复合氧化物优选含有0〜15重量份以下的四价金属。 相对于总共100 pts.wt。 的铟和四价金属。 版权所有(C)2012,JPO&INPIT
    • 2. 发明专利
    • Method for manufacturing transparent conductive film
    • 制造透明导电膜的方法
    • JP2013069679A
    • 2013-04-18
    • JP2012194616
    • 2012-09-04
    • Nitto Denko Corp日東電工株式会社
    • YAMAZAKI YUKANASHIKI TOMOTAKE
    • H01B13/00B32B9/00B32B37/00C23C14/58
    • H01L31/1884G06F2203/04103Y02E10/50
    • PROBLEM TO BE SOLVED: To provide a method for manufacturing a transparent conductive film, capable of shortening a heating time for crystallizing an amorphous layer including indium based composite oxide.SOLUTION: A method for manufacturing a transparent conductive film according to the present invention includes: a first step of laminating an amorphous layer formed of indium based composite oxide on a first face of a film base material having a thickness of 10-50 μm; a second step of, during transporting the film base material having the amorphous layer laminated thereon by means of a supply roller to wind around a take-up roller, heating the film base material up to 160°C or above and crystallizing the amorphous layer to form a transparent conductive layer; and a third step of forming an adhesive layer on a second face of the film base material.
    • 解决的问题:提供一种能够缩短包含铟系复合氧化物的非晶层结晶的加热时间的透明导电膜的制造方法。 解决方案:根据本发明的制造透明导电膜的方法包括:将由铟基复合氧化物形成的非晶层层压在厚度为10-50的膜基材的第一面上的第一步骤 μm; 在通过供给辊在其上层压具有非晶层的膜基材输送卷绕在卷取辊周围的第二步骤中,将膜基材加热至160℃以上并使无定形层结晶为 形成透明导电层; 以及在所述膜基材的第二面上形成粘合剂层的第三工序。 版权所有(C)2013,JPO&INPIT
    • 5. 发明专利
    • Transparent conductive film and method of manufacturing the same
    • 透明导电膜及其制造方法
    • JP2013043372A
    • 2013-03-04
    • JP2011182738
    • 2011-08-24
    • Nitto Denko Corp日東電工株式会社
    • YAMAZAKI YUKANASHIKI TOMOTAKESUGAWARA HIDEO
    • B32B9/00B32B7/02C23C14/58G06F3/041H01B5/14H01B13/00
    • C23C14/086C23C14/024C23C14/35C23C14/5873G06F3/041G06F2203/04103Y10T428/266
    • PROBLEM TO BE SOLVED: To suppress deterioration of appearance due to exposure of a boundary between a pattern opening and a pattern forming part when carrying out incorporation into a touch panel or the like even if a transparent conductor layer is patterned in regard to a transparent conductive film having a crystalline transparent conductor layer on a flexible transparent substrate.SOLUTION: In the transparent conductive film, the transparent conductor layer comprising a crystalline conductive metal oxide is formed on one face of the flexible transparent substrate. Thickness of the flexible transparent substrate is 80 μm or less. In the transparent conductive film, a difference H-His -0.02% to 0.043% between a size change rate Hwhen carrying out heating at 140°C for 30 minutes, and a size change rate Hwhen carrying out heating at 140°C for 30 minutes of the transparent conductive film without the transparent conductor layer which has been removed by etching. By this, a difference in level in the pattern boundary when carrying out incorporation into a touch panel or the like is reduced, and deterioration of appearance is suppressed.
    • 要解决的问题:为了抑制当图案开口和图案形成部分之间的边界暴露于触摸面板等中时的外观劣化,即使透明导体层相对于 在柔性透明基板上具有结晶透明导体层的透明导电膜。 解决方案:在透明导电膜中,包含结晶导电金属氧化物的透明导体层形成在柔性透明基板的一个面上。 柔性透明基板的厚度为80μm以下。 在透明导电膜中,尺寸变化率H之间的差异为-0.02%〜0.043%,差值H 2 在140℃加热30分钟时, 1 ,进行140°加热时的尺寸变化率H 2 透明导电膜30分钟,没有通过蚀刻去除的透明导体层。 由此,进行结合到触摸面板等时的图案边界中的电平差异减小,并且外观的劣化被抑制。 版权所有(C)2013,JPO&INPIT
    • 7. 发明专利
    • Transparent conductive film, touch panel, and electronic apparatus
    • 透明导电膜,触控面板和电子设备
    • JP2011146201A
    • 2011-07-28
    • JP2010005095
    • 2010-01-13
    • Nitto Denko Corp日東電工株式会社
    • YAMAZAKI YUKANASHIKI TOMOTAKESUGAWARA HIDEO
    • H01B5/14G06F3/033
    • PROBLEM TO BE SOLVED: To provide a transparent conductive film which can prevent yellowing under high temperature and high humidity, and further, has a high interlayer adhesion under alkaline condition, a touch panel which uses film, and to provide an electronic apparatus. SOLUTION: The transparent conductive film has a transparent conductive layer 3 formed on one side or on both sides of a transparent substrate 1 via a first transparent dielectric layer 2; and the first transparent dielectric layer contains a specific copolymer having a constitutional unit I, with a partial condensated object of alkoxy-silane on a side chain and a constitutional unit II formed of a styrene system monomer component, or a specific copolymer having the constitutional unit I and the constitutional unit II; and further, the other constituting unit III. The copolymer contains the constituting units I, II, and III, respectively 5-30 mol%, 40-95 mol%, and 0-45 mol%, when the sum total of the constituting units I, II, and III is set to 100 mol%. COPYRIGHT: (C)2011,JPO&INPIT
    • 要解决的问题:提供一种能够防止在高温高湿下发黄的透明导电膜,并且在碱性条件下还具有高的层间粘合性,使用膜的触摸面板和提供电子设备 。 透明导电膜具有通过第一透明介电层2在透明基板1的一侧或两侧形成的透明导电层3; 并且第一透明介电层含有具有结构单元I的特定共聚物,侧链上具有烷氧基硅烷的部分缩合物和由苯乙烯系单体组分形成的结构单元II或具有结构单元的特定共聚物 我和宪法第二单元; 另外构成单元III。 当将构成单元I,II和III的总和设定为:共构
      成单元I,II和III分别为5-30mol%,40-95mol%和0-45mol%时, 100摩尔%。 版权所有(C)2011,JPO&INPIT