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1. 发明申请

US20080185567A1 Methods for forming resistive switching memory elements 有权
标题翻译：形成电阻式开关存储元件的方法
公开(公告)号：US20080185567A1
公开(公告)日：2008-08-07
申请号：US11702966
申请日：2007-02-05
申请人： Nitin Kumar , Chi-I Lang , Tony Chiang , Zhi-wen Sun , Jihhong Tong
发明人： Nitin Kumar , Chi-I Lang , Tony Chiang , Zhi-wen Sun , Jihhong Tong
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/145 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1633
摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
摘要翻译：提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。可以沉积多层导电材料，每层具有不同的氧化速率。可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

2. 发明授权

US07704789B2 Methods for forming resistive switching memory elements 有权
标题翻译：形成电阻式开关存储元件的方法
公开(公告)号：US07704789B2
公开(公告)日：2010-04-27
申请号：US11702967
申请日：2007-02-05
申请人： Zhi-wen Sun , Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang
发明人： Zhi-wen Sun , Nitin Kumar , Jinhong Tong , Chi-I Lang , Tony Chiang
IPC分类号： H01L21/00
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
摘要翻译：提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。可以沉积多层导电材料，每层具有不同的氧化速率。可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

3. 发明授权

US07678607B2 Methods for forming resistive switching memory elements 有权
公开(公告)号：US07678607B2
公开(公告)日：2010-03-16
申请号：US11702725
申请日：2007-02-05
申请人： Tony Chiang , Chi-I Lang , Zhi-wen Sun , Jinhong Tong , Nitin Kumar
发明人： Tony Chiang , Chi-I Lang , Zhi-wen Sun , Jinhong Tong , Nitin Kumar
IPC分类号： H01L21/00
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

4. 发明申请

US20080185572A1 Methods for forming resistive switching memory elements 有权
公开(公告)号：US20080185572A1
公开(公告)日：2008-08-07
申请号：US11702725
申请日：2007-02-05
申请人： Tony Chiang , Chi-I Lang , Zhi-wen Sun , Jinhong Tong , Nitin Kumar
发明人： Tony Chiang , Chi-I Lang , Zhi-wen Sun , Jinhong Tong , Nitin Kumar
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

5. 发明申请

US20110201149A1 METHODS FOR FORMING RESISTIVE SWITCHING MEMORY ELEMENTS 有权
标题翻译：形成电阻式开关记忆元件的方法
公开(公告)号：US20110201149A1
公开(公告)日：2011-08-18
申请号：US13096719
申请日：2011-04-28
申请人： Nitin Kumar , Chi-I Lang , Tony Chiang , Zhi-wen Sun , Jinhong Tong
发明人： Nitin Kumar , Chi-I Lang , Tony Chiang , Zhi-wen Sun , Jinhong Tong
IPC分类号： H01L21/8239
CPC分类号： H01L45/145 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1633
摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
摘要翻译：提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。可以沉积多层导电材料，每层具有不同的氧化速率。可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

6. 发明授权

US07972897B2 Methods for forming resistive switching memory elements 有权
标题翻译：形成电阻式开关存储元件的方法
公开(公告)号：US07972897B2
公开(公告)日：2011-07-05
申请号：US11702966
申请日：2007-02-05
申请人： Nitin Kumar , Chi-I Lang , Tony Chiang , Zhi-wen Sun , Jinhong Tong
发明人： Nitin Kumar , Chi-I Lang , Tony Chiang , Zhi-wen Sun , Jinhong Tong
IPC分类号： H01L21/00
CPC分类号： H01L45/145 , H01L27/2409 , H01L27/2463 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/146 , H01L45/1633
摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.
摘要翻译：提供电阻式开关存储器元件，其可以包含由无电金属形成的化学金属电极和金属氧化物。电阻式开关存储器元件可以表现出双稳态，并且可以用于高密度多层存储器集成电路中。诸如镍基材料的无电导电材料可以选择性地沉积在硅晶片或其它合适的衬底上的导体上。无电导电材料可以被氧化以形成用于电阻式开关存储元件的金属氧化物。可以沉积多层导电材料，每层具有不同的氧化速率。可以利用导电层的差异氧化速率来确保在制造期间形成所需厚度的金属氧化物层。

7. 发明申请

US20080185573A1 Methods for forming resistive switching memory elements 有权
公开(公告)号：US20080185573A1
公开(公告)日：2008-08-07
申请号：US11702967
申请日：2007-02-05
申请人： Zhi-wen Sun , Nitin Kumar , Jinhong Tong , Chi-l Lang , Tony Chiang
发明人： Zhi-wen Sun , Nitin Kumar , Jinhong Tong , Chi-l Lang , Tony Chiang
IPC分类号： H01L47/00 , H01L21/00
CPC分类号： H01L45/04 , H01L27/2409 , H01L27/2463 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： Resistive switching memory elements are provided that may contain electroless metal electrodes and metal oxides formed from electroless metal. The resistive switching memory elements may exhibit bistability and may be used in high-density multi-layer memory integrated circuits. Electroless conductive materials such as nickel-based materials may be selectively deposited on a conductor on a silicon wafer or other suitable substrate. The electroless conductive materials can be oxidized to form a metal oxide for a resistive switching memory element. Multiple layers of conductive materials can be deposited each of which has a different oxidation rate. The differential oxidization rates of the conductive layers can be exploited to ensure that metal oxide layers of desired thicknesses are formed during fabrication.

8. 发明授权

US06808611B2 Methods in electroanalytical techniques to analyze organic components in plating baths 有权
公开(公告)号：US06808611B2
公开(公告)日：2004-10-26
申请号：US10187734
申请日：2002-06-27
申请人： Zhi-wen Sun , Chunman Yu , Brian Metzger , David W. Nguyen , Girish Dixit
发明人： Zhi-wen Sun , Chunman Yu , Brian Metzger , David W. Nguyen , Girish Dixit
IPC分类号： C25D2100
CPC分类号： C25D21/12 , G01N27/42 , G01N27/49 , G01N31/164
摘要： Embodiments of the invention provide an electro-analytical method for determining the concentration of an organic additive in an acidic or basic metal plating bath using an organic chemical analyzer. The method includes preparing a supporting-electrolyte solution, preparing a testing solution including the supporting-electrolyte solution and a standard solution, measuring an electrochemical response of the supporting-electrolyte solution using the organic chemical analyzer, and implementing an electro-analytical technique to determine the concentration of the organic additive in the plating bath from the electrochemical response measurements. The method is performed for independently analyzing one organic additive component in a plating bath containing multi-component organic additives, regardless of knowledge of the concentration of other organic additives and with minimal interference among organic additives.

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