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1. 发明申请

US20070173040A1 Method of reducing an inter-atomic bond strength in a substance 审中-公开
标题翻译：减少物质中原子间键合强度的方法
公开(公告)号：US20070173040A1
公开(公告)日：2007-07-26
申请号：US11329324
申请日：2006-01-09
申请人： Nirmal Theodore , Stephen Schauer , Clarence Tracy
发明人： Nirmal Theodore , Stephen Schauer , Clarence Tracy
IPC分类号： H01L21/20
CPC分类号： H01L21/2636 , H01L21/02532 , H01L21/02689
摘要： A method of reducing an inter-atomic bond strength in a substance includes the steps of: providing a target material (110, 910, 1210, 1260, 1410, 1460); exposing the target material to a particle flood (140); and annealing the target material while exposing the target material to the particle flood. As an example, the target material can be a collection of non-activated dopant atoms within a semiconducting material. As another example, the target material can be a semiconducting material in an amorphous form. In a different embodiment of the invention an electrically conducting material (950, 1250, 1270, 1450, 1470, 1480) is used as an electron source rather than a particle flood, and an electrically conducting diffusion barrier (940) is placed between the electrically conducting material and the target material.
摘要翻译：减少物质中的原子间键合强度的方法包括以下步骤：提供目标材料（110,910,1210,1260,1410,1460）; 将目标材料暴露于颗粒溢流（140）; 并且在将目标材料暴露于颗粒物溢出的同时退火目标材料。作为示例，目标材料可以是半导体材料内的非活化掺杂剂原子的集合。作为另一个实例，靶材料可以是无定形形式的半导体材料。在本发明的不同实施例中，使用导电材料（950,1250,1270,1450,1470,1480）作为电子源而不是粒子泛流，并且导电扩散阻挡层（940）被放置在电导电材料和目标材料。

2. 发明申请

US20070141740A1 METHOD FOR DAMAGE AVOIDANCE IN TRANSFERRING AN ULTRA-THIN LAYER OF CRYSTALLINE MATERIAL WITH HIGH CRYSTALLINE QUALITY 有权
标题翻译：用于传输具有高结晶质量的结晶材料的超薄层的损伤避免方法
公开(公告)号：US20070141740A1
公开(公告)日：2007-06-21
申请号：US11554847
申请日：2006-10-31
申请人： Nirmal Theodore , John Freeman , Clarence Tracy
发明人： Nirmal Theodore , John Freeman , Clarence Tracy
IPC分类号： H01L21/00
CPC分类号： H01L21/76254 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： A method for damage avoidance in transferring a monocrystalline, thin layer from a first substrate onto a second substrate involves epitaxial growth of a sandwich structure with a strained epitaxial layer buried below a monocrystalline thin layer, and lift-off and transfer of the monocrystalline thin layer with the cleaving controlled to happen within the buried strained layer in conjunction with the introduction of hydrogen.
摘要翻译：将单晶薄层从第一衬底转移到第二衬底上的避免损伤的方法包括外延生长具有埋在单晶薄层之下的应变外延层的夹层结构，以及单晶薄层的剥离和转移结合氢的引入，可以在埋层应变层内进行裂开控制。

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