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1. 发明专利

JP2013165095A Semiconductor thin film laser 审中-公开
标题翻译：半导体薄膜激光器
公开(公告)号：JP2013165095A
公开(公告)日：2013-08-22
申请号：JP2012025978
申请日：2012-02-09
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社 , Tokyo Institute Of Technology , 国立大学法人東京工業大学
发明人： KAMIOKA HIROYUKI , ISHII HIROYUKI , MOTAI HIROYASU , SHIBATA YASUO , OHASHI HIROMI , NISHIYAMA NOBUHIKO , ARAI SHIGEHISA , ATSUMI YUKI
IPC分类号： H01S5/20
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor thin film laser having reduced wavelength and temperature dependence, which can extract an accurate wavelength signal in wavelength multiplex communication without causing shift of signal light to an adjacent channel even when a temperature changes.SOLUTION: In a semiconductor thin film laser, a BCB resin layer 30 which has negative refraction factor and temperature dependence is sandwiched in a substrate stacking direction by an Si waveguide 20 which has a higher refraction factor in comparison with the BCB resin layer 30 and has positive refraction factor and temperature dependence, and an InP semiconductor layer 40 which has a GaInAsP quantum well 43.
摘要翻译：要解决的问题：提供一种具有降低的波长和温度依赖性的半导体薄膜激光器，其可以在波长多路通信中提取准确的波长信号，而不会导致信号光到相邻通道的移动，即使当温度改变时。解决方案：在半导体薄膜激光器，具有负折射系数和温度依赖性的BCB树脂层30通过与BCB树脂层30相比具有较高折射系数的Si波导管20夹在基板堆叠方向上并具有正折射率，温度依赖性和具有GaInAsP量子阱43的InP半导体层40。

2. 发明专利

JP2013165152A Plasmon thin film laser 审中-公开
标题翻译： PLASMON薄膜激光
公开(公告)号：JP2013165152A
公开(公告)日：2013-08-22
申请号：JP2012027114
申请日：2012-02-10
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社 , Tokyo Institute Of Technology , 国立大学法人東京工業大学
发明人： KAMIOKA HIROYUKI , OHASHI HIROMI , ISHII HIROYUKI , MOTAI HIROYASU , SHIBATA YASUO , NISHIYAMA NOBUHIKO , ARAI SHIGEHISA , AMEMIYA TOMOHIRO , OKUMURA TADATSUGU
IPC分类号： H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide a low threshold and downsized lateral current injection type thin film laser for aiming at realizing on-chip optical wiring.SOLUTION: The thin film semiconductor laser is provided with a fine metal resonator array 7 in a SiO1 and allows for confining TE mode light by surface plasmon by changing dielectric constant and permeability of a metamaterial structure 8 made of a fine metal resonator array 7, and realizes a low threshold and downsized laser by the intense light confinement.
摘要翻译：要解决的问题：提供一种低阈值和小尺寸的横向电流注入型薄膜激光器，以实现片上光布线。解决方案：薄膜半导体激光器在SiO1中设置有细金属谐振器阵列7，并允许通过改变由细金属谐振器阵列7制成的超材料结构8的介电常数和导磁率，通过表面等离子体激元限制TE模式光，并且通过强光限制实现低阈值和小型化的激光。

3. 发明专利

JP2012186419A Optical power monitor integrated dfb laser 有权
标题翻译：光功率监视器集成DFB激光
公开(公告)号：JP2012186419A
公开(公告)日：2012-09-27
申请号：JP2011050063
申请日：2011-03-08
申请人： Nippon Telegr & Teleph Corp , Tokyo Institute Of Technology , 国立大学法人東京工業大学 , 日本電信電話株式会社
发明人： KAMIOKA HIROYUKI , SHIBATA YASUO , OHASHI HIROMI , ISHII HIROYUKI , MOTAI HIROYASU , NISHIYAMA NOBUHIKO , ARAI SHIGEHISA , SHINDO TAKAHIKO
IPC分类号： H01S5/12 , H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide an optical power monitor integrated DFB laser which has a function as an optical power monitor while keeping high reflectivity.SOLUTION: In the semiconductor laser in which a distribution Bragg reflection region is integrated, an active layer of a waveguide of the semiconductor laser has a thin line structure, and the output of the semiconductor laser is monitored by an absorption current in the distribution Bragg reflection region.
摘要翻译：要解决的问题：提供具有作为光功率监视器的功能的光功率监视器集成DFB激光器，同时保持高反射率。解决方案：在其中集成分布布拉格反射区域的半导体激光器中，半导体激光器的波导的有源层具有细线结构，并且通过吸收电流来监视半导体激光器的输出分布布拉格反射区域。版权所有（C）2012，JPO＆INPIT

4. 发明专利

JP2012186418A Active layer discrete type phase shift dfb laser 审中-公开
标题翻译：主动层离散型相移DFB激光
公开(公告)号：JP2012186418A
公开(公告)日：2012-09-27
申请号：JP2011050062
申请日：2011-03-08
申请人： Nippon Telegr & Teleph Corp , Tokyo Institute Of Technology , 国立大学法人東京工業大学 , 日本電信電話株式会社
发明人： KAMIOKA HIROYUKI , SHIBATA YASUO , OHASHI HIROMI , ISHII HIROYUKI , MOTAI HIROYASU , NISHIYAMA NOBUHIKO , ARAI SHIGEHISA , LEE SEUNG-HOON
IPC分类号： H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide an active layer discrete type phase shift DFB laser with particularly high forward optical output and high single mode characteristic, among small DFB lasers with low power consumption.SOLUTION: The active layer discrete type phase shift DFB laser includes a non-continuously discrete active layer with a quantum well active layer etched at regular intervals. A part of a DFB resonator formed by the active layer is provided with a phase shift of λ/10 to λ/4 inclusive in shift amount.
摘要翻译：要解决的问题：在具有低功耗的小型DFB激光器中，提供具有特别高的正向光输出和高单模特性的有源层离散型相移DFB激光器。解决方案：有源层离散型相移DFB激光器包括具有以规则间隔蚀刻的量子阱活性层的非连续离散有源层。由有源层形成的DFB谐振器的一部分以移位量设置为λ/ 10〜λ/ 4的相移。版权所有（C）2012，JPO＆INPIT

5. 发明专利

JP2011066175A Semiconductor laser 审中-公开
标题翻译：半导体激光器
公开(公告)号：JP2011066175A
公开(公告)日：2011-03-31
申请号：JP2009215168
申请日：2009-09-17
申请人： Nippon Telegr & Teleph Corp , Tokyo Institute Of Technology , 国立大学法人東京工業大学 , 日本電信電話株式会社
发明人： KAMIOKA HIROYUKI , OHASHI HIROMI , SUGO MITSURU , NISHIYAMA NOBUHIKO , ARAI SHIGEHISA
IPC分类号： H01S5/20
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser having stable single mode performance and capable of obtaining high power. SOLUTION: The semiconductor laser has an InP substrate 2 and an SCH deformed MQW active layer 3 provided on the InP substrate 2, wherein an isolated groove 11 is formed by removing part of the SCH deformed MQW active layer 3 and a material 12 different from an MQW25 of the SCH deformed MQW active layer 3 is embedded in the isolated groove 11. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有稳定的单模性能并能够获得高功率的半导体激光器。解决方案：半导体激光器具有设置在InP衬底2上的InP衬底2和SCH变形的MQW有源层3，其中通过去除部分SCH变形的MQW有源层3和材料12形成隔离沟槽11 不同于SCH变形MQW有源层3的MQW25嵌入在隔离槽11中。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2011066174A Optical integrated element 审中-公开
标题翻译：光学综合元件
公开(公告)号：JP2011066174A
公开(公告)日：2011-03-31
申请号：JP2009215167
申请日：2009-09-17
申请人： Nippon Telegr & Teleph Corp , Tokyo Institute Of Technology , 国立大学法人東京工業大学 , 日本電信電話株式会社
发明人： KAMIOKA HIROYUKI , OHASHI HIROMI , SUGO MITSURU , NISHIYAMA NOBUHIKO , ARAI SHIGEHISA , LEE SEUNG-HOON
IPC分类号： H01S5/026 , H01S5/12
摘要： PROBLEM TO BE SOLVED: To provide an optical integrated element such as an integrated DFB laser in which a DFB laser element and an optical element are integrated, having a structure capable of reducing internal reflection generated between elements without using a new manufacturing step of an inclined waveguide or the like.
SOLUTION: For example, the integrated DFB laser (optical integrated element) in which a DFB laser element 101 having a diffraction grating and an optical element 102 having a waveguide guiding layer 106 are integrated has a structure in which a refractive index shifting region 107 consisting of constituents 131, 132 each having an optical path length of a sub-wavelength or a wavelength equivalent to the sub-wavelength is installed between a diffraction grating 103 of the DFB laser element 101 and the waveguide guiding layer 106 of the optical element 102.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供集成DFB激光元件和光学元件的集成DFB激光器的光学集成元件，具有能够减少元件之间产生的内部反射的结构，而不使用新的制造步骤的倾斜波导等。解决方案：例如，其中具有衍射光栅的DFB激光元件101和具有波导引导层106的光学元件102集成的集成DFB激光器（光学集成元件）具有折射率偏移在DFB激光元件101的衍射光栅103和光学器件的波导引导层106之间，安装由具有亚波长或与亚波长相当的波长的光路长度的构成要素131,132构成的区域107。元素102.版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2008017312A Information leakage prevention apparatus 审中-公开
标题翻译：信息泄漏防护装置
公开(公告)号：JP2008017312A
公开(公告)日：2008-01-24
申请号：JP2006188200
申请日：2006-07-07
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： MASUGI MASAO , TAJIMA KIMIHIRO , TOMINAGA AKIYOSHI , KAMIOKA HIROYUKI , SAO MASAHARU
IPC分类号： H04K3/00
摘要： PROBLEM TO BE SOLVED: To prevent information from being leaked by reproducing an electromagnetic wave radiated from an information device.
SOLUTION: An information leakage prevention apparatus includes a clock signal extraction section 11, an IF unit 111 and a main body unit 112, a clock signal generation section 12, a prevention signal generation section 13, a prevention signal generation circuit 131, an output amplifier unit 132 and a video information management unit 133, and a prevention signal output section 14. The clock signal extraction section 11 receives an RGB signal, a horizontal synchronizing signal and a vertical synchronizing signal and extracts a dot clock signal. The clock signal generation section 12 outputs a pseudo clock signal synchronized with the dot clock signal or a pseudo clock signal with a phase difference previously designated for the pseudo clock signal 1. Outputted is any one of an n-order differentiated signal of the pseudo clock signal, an N-fold cycle signal of the pseudo clock signal, a signal similar to a differentiated signal of the pseudo clock signal, and a signal changing an offset position in an amplitude direction of the N-fold cycle signal or a duty ratio decreased signal of the pseudo clock signal.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：通过再现从信息设备辐射的电磁波来防止信息泄漏。解决方案：信息泄漏防止装置包括：时钟信号提取部11，IF部111以及主体部112，时钟信号生成部12，防止信号生成部13，防止信号生成电路131，输出放大器单元132和视频信息管理单元133以及防止信号输出部分14.时钟信号提取部分11接收RGB信号，水平同步信号和垂直同步信号，并提取点时钟信号。时钟信号生成部分12输出与点时钟信号同步的伪时钟信号或者对于伪时钟信号1预先指定的相位差的伪时钟信号。输出是伪时钟的n阶微分信号中的任何一个信号，伪时钟信号的N倍周期信号，类似于伪时钟信号的微分信号的信号，以及改变N倍周期信号的幅度方向上的偏移位置或占空比的信号减小伪时钟信号的信号。版权所有（C）2008，JPO＆INPIT

8. 发明专利

JP2005340644A Light emitting diode and manufacturing method thereof 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：JP2005340644A
公开(公告)日：2005-12-08
申请号：JP2004159748
申请日：2004-05-28
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： SUGO MITSURU , SHIBATA YASUO , KAMIOKA HIROYUKI , TOMORI YUICHI
IPC分类号： H01L33/06 , H01L33/14 , H01L33/30 , H01L33/38 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To widen the band of a light emitting diode while suppressing its manufacturing process from becoming complex. SOLUTION: A stripe waveguide 2 and stripe waveguides 12, 22, and 32 branching from the stripe waveguide 2 are provided on a substrate 1. An active layer for light emitting action is formed on each of the stripe waveguides 2, 12, 22, and 32. The length of the active layer provided to the stripe waveguides 12, 22, and 32 is set to be different from each other. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：在抑制其制造工艺变得复杂的同时，扩大发光二极管的带宽。解决方案：条形波导2和从条形波导2分支的条形波导12,22和32设置在基板1上。在每个条形波导2,12上形成用于发光动作的有源层，提供给条形波导12,22和32的有源层的长度被设定为彼此不同。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2013219238A Superconductive device 审中-公开
标题翻译：超级设备
公开(公告)号：JP2013219238A
公开(公告)日：2013-10-24
申请号：JP2012089418
申请日：2012-04-10
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： KAMIOKA HIROYUKI
IPC分类号： H01S5/227 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide a structure which efficiently radiates heat generated during the driving of a semiconductor device having a form where a side surface of a waveguide is buried with a semiconducting material, an organic material, and the like.SOLUTION: A semiconductor device has a buried region made of a semiconducting material or an organic material on a side surface of a waveguide. The semiconductor device further includes vent holes, each of which is composed of at least two or more openings and a cavity connecting the openings with each other, in the buried region. When at least one of the openings has a height different from heights of the other openings, heat generated during the driving of the semiconductor device generates an upward current in the vent hole structure, and outer cooling air flowing from the lower opening of the vent hole moves upward in the vent hole to draw heat from a side wall of the vent hole and be exhausted from the upper opening. Thus, heat is efficiently radiated.
摘要翻译：要解决的问题：提供一种有效地辐射在半导体器件驱动期间产生的热的结构，该半导体器件具有用半导体材料，有机材料等埋入波导的侧表面的形式。解决方案：半导体器件具有由波导的侧表面上的半导体材料或有机材料制成的掩埋区域。该半导体器件还包括通气孔，每个通孔由至少两个或更多个开口和在该掩埋区域中彼此连接开口的空腔构成。当开口中的至少一个具有与其他开口的高度不同的高度时，在半导体器件的驱动期间产生的热在通气孔结构中产生向上的电流，并且从通气孔的下开口流出的外部冷却空气在通气孔中向上移动以从通气孔的侧壁吸收热量并从上部开口排出。因此，有效地辐射热量。

10. 发明专利

JP2005045128A Method for adjusting coating reflection factor 有权
标题翻译：调整涂层反射因子的方法
公开(公告)号：JP2005045128A
公开(公告)日：2005-02-17
申请号：JP2003279413
申请日：2003-07-24
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： TAKESHITA TATSUYA , SUGO MITSURU , SHIBATA YASUO , TOMORI YUICHI , KAMIOKA HIROYUKI
IPC分类号： G02B6/13 , G02B6/122 , G02F1/015 , H01L21/302 , H01S3/00 , H01S5/028
摘要： PROBLEM TO BE SOLVED: To adjust the reflection factor of a coating film formed at the edge of the light emitting surface of an optical element such as a semiconductor laser or a surface light wave circuit to a proper value. SOLUTION: Properties of the optical element are monitored, while the thickness of the coating film (a reflection film or an anti-reflection film) is adjusted by etching. Since the abrasion by irradiation of ultraviolet laser beams is used as an etching method, the light output section of the coating film formed at the end surface for the light emission can be etched locally without using a resist mask. Further, since the etching accuracy is in nm unit, a precise etching amount can be controlled. For this reason, the coating film coincident with a designed reflection factor which was difficult in the prior art is obtained. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：将形成在诸如半导体激光器或表面光波形电路的光学元件的发光表面的边缘处的涂膜的反射系数调整到适当的值。
解决方案：通过蚀刻来调节光学元件的性能，同时涂覆膜（反射膜或抗反射膜）的厚度。由于使用紫外激光束照射的磨损作为蚀刻方法，所以可以在不使用抗蚀剂掩模的情况下局部蚀刻形成在发光的端面的涂膜的光输出部。此外，由于蚀刻精度为nm单位，因此可以控制精确的蚀刻量。因此，获得与现有技术难以设计的反射系数一致的涂膜。版权所有（C）2005，JPO＆NCIPI

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