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    • 3. 发明授权
    • Optoelectronic component
    • 光电元件
    • US07982387B2
    • 2011-07-19
    • US12157054
    • 2008-06-06
    • Benjamin Claus KrummacherFlorian SchindlerNorwin von MalmManfred Url
    • Benjamin Claus KrummacherFlorian SchindlerNorwin von MalmManfred Url
    • H05B33/00H04N9/31
    • H01L27/322H01L33/507H01L51/5036H01L51/5262Y10S362/80
    • An optoelectronic component comprises a first electrode (3), a radiation-emitting layer sequence (1) having an active region (10) on the first electrode (3), which region has a main extension plane (E) with a surface normal (N) and emits an electromagnetic primary radiation having a non-Lambertian emission characteristic, a second electrode (4) on the radiation-emitting layer sequence (1), said second electrode being transparent to the primary radiation, and a wavelength conversion layer (2) in the beam path of the primary radiation, which converts the primary radiation at least partly into an electromagnetic secondary radiation. In this case, the first electrode (3) is reflective to the primary radiation, the non-Lambertian emission characteristic is given by an intensity I(α) of the primary radiation of the radiation-emitting layer sequence (1) as a function of an emission angle α measured with respect to the surface normal (N), the intensity I(α) increases from a α≧0° with increasing angle α up to a maximum angle αmax, and the conversion probability of the electromagnetic primary radiation in the wavelength conversion layer (2) increases as the emission angle α increases.
    • 光电子部件包括第一电极(3),在第一电极(3)上具有有源区(10)的辐射发射层序列(1),该区域具有表面法线的主延伸面(E) N)并且发射具有非朗伯发射特性的电磁一次辐射,在辐射发射层序列(1)上的第二电极(4),所述第二电极对于一次辐射是透明的,并且波长转换层 )在主辐射的光束路径中,其将初级辐射至少部分地转换成电磁次级辐射。 在这种情况下,第一电极(3)对初级辐射是反射的,非朗伯式发射特性由辐射发射层序列(1)的主要辐射的强度I(α)作为 相对于表面法线(N)测量的发射角α,强度I(α)随着角度α增加而从α≥0°增加到最大角度αmax,并且电磁一次辐射的转换概率 波长转换层(2)随着发射角α的增加而增加。
    • 10. 发明授权
    • Semiconductor light source
    • 半导体光源
    • US09052094B2
    • 2015-06-09
    • US13390289
    • 2010-06-30
    • Benjamin Claus Krummacher
    • Benjamin Claus Krummacher
    • F21V14/02F21V14/04H01L25/00H01L25/04F21K99/00F21V7/05F21V7/00F21Y105/00
    • F21V14/02F21K9/00F21V7/0025F21V7/0083F21V7/05F21V14/04F21Y2105/00H01L25/00H01L25/048H01L2924/0002H01L2924/00
    • In at least one embodiment of the semiconductor light source (1), the latter comprises at least two planar elements (2). The planar elements (2) each contain a semiconductor material for producing ultraviolet or visible radiation (R) when the semiconductor light source (1) is in operation. The radiation (R) is in this case emitted at precisely one major face (3) of the planar elements (2). The reflectivity of the planar elements (2) for visible radiation, when the semiconductor light source (1) is not in operation, amounts to at least 80%. The planar elements (2) furthermore exhibit an average diameter (L) of at least 10 mm. Furthermore the major faces (3) of the planar elements (2) are arranged at an angle (α) to one another and facing one another. The angle (α) between the major faces (3) amounts in this case to between 30° and 120° inclusive.
    • 在半导体光源(1)的至少一个实施例中,后者包括至少两个平面元件(2)。 平面元件(2)各自包含用于在半导体光源(1)工作时产生紫外线或可见光辐射(R)的半导体材料。 在这种情况下,辐射(R)在平面元件(2)的精确的一个主面(3)处发射。 当半导体光源(1)不工作时,用于可见光的平面元件(2)的反射率至少为80%。 平面元件(2)还具有至少10mm的平均直径(L)。 此外,平面元件(2)的主面(3)彼此成角度(α)并且彼此面对。 在这种情况下,主面(3)之间的角度(α)在30°和120°之间。