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    • 1. 发明授权
    • Methods and apparatuses for conditioning polishing surfaces utilized during CMP processing
    • 用于调节CMP加工过程中使用的抛光表面的方法和装置
    • US06953382B1
    • 2005-10-11
    • US10876826
    • 2004-06-24
    • Nikolay KorovinRobert J. Stoya
    • Nikolay KorovinRobert J. Stoya
    • B24B1/00B24B37/04B24B49/18B24B53/007
    • B24B53/017B24B49/18
    • Methods and apparatus are provided for conditioning of polishing surfaces utilized during CMP processing. The method comprises contacting the polishing surface and a conditioning surface with a first force, one of the surfaces coupled to a support member that has an axis. The polishing surface and/or the conditioning surface is moved at a constant velocity. Torque exerted by the support member about the axis to effect a relative position between the conditioning surface and the polishing surface is measured and used to obtain a process variable. The process variable is compared to a setpoint value for the relative position of the conditioning surface and the polishing surface. A second force is calculated and the polishing surface and the conditioning surface then are contacted with the second force, if the process variable differs from the setpoint value by more than an allowed tolerance.
    • 提供了用于调节在CMP处理期间使用的抛光表面的方法和装置。 该方法包括使抛光表面和调节表面接触第一力,其中一个表面联接到具有轴的支撑构件。 抛光表面和/或调理表面以恒定的速度移动。 测量由支撑构件围绕轴线施加的扭矩以实现调节表面和抛光表面之间的相对位置,并用于获得过程变量。 将过程变量与调节表面和抛光表面的相对位置的设定值进行比较。 如果过程变量与设定点值不同于允许的公差,则计算第二个力并且抛光表面和调节表面接触第二个力。