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    • 5. 发明授权
    • Light source
    • 光源
    • US08657475B2
    • 2014-02-25
    • US13499884
    • 2010-10-12
    • Nicole J. WagnerCraig R. SchardtZhaohui Yang
    • Nicole J. WagnerCraig R. SchardtZhaohui Yang
    • B60Q1/06
    • G02B3/0037H01L33/58
    • Wherein the light source comprising: a monolithic emissive semiconductor device; and an array of lenslets, the lenslets being optically and mechanically coupled to the monolithic emissive semiconductor device; wherein the monolithic emissive semiconductor device comprises an array of localized light emission regions, each region corresponding to a given lenslet; wherein the lenslets have an apparent center of curvature (Ca), an apparent focal point (fa), a radius of curvature (R) and a lenslet base diameter (D), the base diameter being the width of the lenslet at the intersection with the monolithic emissive semiconductor device; wherein the distance along the lenslet optic axis between the Ca and the fa are normalized, such that Ca is located at distance 0 and fa is located at point 1; wherein each localized light emission region is located at a point that is greater than 0, and less than Formula (I); and wherein each light emission region has a diameter, the emission region diameter measuring one-third or less of a corresponding lenslet base diameter.
    • 其中所述光源包括:单片发射半导体器件; 和小透镜阵列,所述小透镜光学和机械耦合到所述单片发射半导体器件; 其中所述单片发射半导体器件包括局部发光区域阵列,每个区域对应于给定的小透镜; 其中所述小透镜具有明显的曲率中心(Ca),视在焦点(fa),曲率半径(R)和小透镜基底直径(D),所述基底直径是所述小透镜在与所述透镜的交点处的宽度 单片发射半导体器件; 其中沿着Ca和fa之间的小透镜光轴的距离被归一化,使得Ca位于距离0处,并且fa位于点1处; 其中每个局部发光区域位于大于0且小于公式(I)的点处; 并且其中每个发光区域具有直径,所述发射区域直径测量相应的小透镜底座直径的三分之一或更小。
    • 6. 发明申请
    • LIGHT SOURCE
    • 光源
    • US20120193607A1
    • 2012-08-02
    • US13499884
    • 2010-10-12
    • Nicole J. WagnerCraig R. SchardtZhaohui Yang
    • Nicole J. WagnerCraig R. SchardtZhaohui Yang
    • H01L33/06H01L33/60H01L33/08
    • G02B3/0037H01L33/58
    • Wherein the light source comprising: a monolithic emissive semiconductor device; and an array of lenslets, the lenslets being optically and mechanically coupled to the monolithic emissive semiconductor device; wherein the monolithic emissive semiconductor device comprises an array of localized light emission regions, each region corresponding to a given lenslet; wherein the lenslets have an apparent center of curvature (Ca), an apparent focal point (fa), a radius of curvature (R) and a lenslet base diameter (D), the base diameter being the width of the lenslet at the intersection with the monolithic emissive semiconductor device; wherein the distance along the lenslet optic axis between the Ca and the fa are normalized, such that Ca is located at distance 0 and fa is located at point 1; wherein each localized light emission region is located at a point that is greater than 0, and less than Formula (I); and wherein each light emission region has a diameter, the emission region diameter measuring one-third or less of a corresponding lenslet base diameter.
    • 其中所述光源包括:单片发射半导体器件; 和小透镜阵列,所述小透镜光学和机械耦合到所述单片发射半导体器件; 其中所述单片发射半导体器件包括局部发光区域阵列,每个区域对应于给定的小透镜; 其中所述小透镜具有明显的曲率中心(Ca),视在焦点(fa),曲率半径(R)和小透镜基底直径(D),所述基底直径是所述小透镜在与所述透镜的交点处的宽度 单片发射半导体器件; 其中沿着Ca和fa之间的小透镜光轴的距离被归一化,使得Ca位于距离0处,并且fa位于点1处; 其中每个局部发光区域位于大于0且小于公式(I)的点处; 并且其中每个发光区域具有直径,所述发射区域直径测量相应的小透镜底座直径的三分之一或更小。