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    • 4. 发明授权
    • Thin film deposition method
    • 薄膜沉积法
    • US08815340B2
    • 2014-08-26
    • US13148826
    • 2010-03-10
    • Guillaume BignonNicolas NadaudBinh TranSe-Jong Kim
    • Guillaume BignonNicolas NadaudBinh TranSe-Jong Kim
    • B05D3/08
    • C03C17/002C03C2218/156C03C2218/32C03C2218/345C23C14/5806
    • The subject of the invention is a heat treatment process by flame treatment of at least one thin film deposited on a glass substrate (1) running in the path of at least one flame treatment device comprising at least one burner (2), said treatment being able to increase the degree of crystallization of said at least one thin film and/or to increase the size of the crystallites in said at least one thin film, said process being characterized in that the maximum transient bending “b” is less than 150 mm and respects the following condition: b≦0.9×d where the bending “b” corresponds to the distance, expressed in mm, between the plane of the substrate without heating (P1) and the point of the substrate closest to the plane (P2) passing through the tip (6) of the burner (2) and parallel to the plane of the substrate without heating (P1), “d” corresponds to the distance between the plane of the substrate without heating (P1) and the tip (6) of the burner (2), expressed in mm, the width of the substrate “L” in a direction perpendicular to the run direction (5) being greater than or equal to 1.1 m.
    • 本发明的主题是通过火焰处理沉积在包括至少一个燃烧器(2)的至少一个火焰处理装置的路径中的玻璃基板(1)上的至少一个薄膜的热处理工艺,所述处理是 能够增加所述至少一个薄膜的结晶度和/或增加所述至少一个薄膜中的微晶尺寸,所述方法的特征在于最大瞬态弯曲“b”小于150mm 并且满足以下条件:b≦̸ 0.9×d其中弯曲“b”对应于不加热衬底的平面(P1)与最接近平面(P2)的衬底的点之间的距离(以mm表示) 通过燃烧器(2)的尖端(6)并且平行于基板的平面而不加热(P1),“d”对应于基板的平面与加热(P1)之间的距离和尖端(6) )的燃烧器(2),以mm表示, 在与行进方向(5)垂直的方向上的基板“L”的宽度大于或等于1.1μm。
    • 5. 发明授权
    • Substrate comprising a stack having thermal properties
    • 底物包括具有热性质的叠层
    • US08420207B2
    • 2013-04-16
    • US12281774
    • 2007-03-06
    • Pascal ReutlerNicolas NadaudEstelle MartinLaurent Labrousse
    • Pascal ReutlerNicolas NadaudEstelle MartinLaurent Labrousse
    • B32B17/06C23C14/34C23C14/35
    • B32B17/10036B32B17/10018B32B17/10174B32B17/10761B32B17/10788C03C17/36C03C17/3626C03C17/3639C03C17/3652C03C17/366C03C17/3668C03C17/3681Y10T428/2495Y10T428/24975
    • The invention relates to a substrate (10), provided with a thin-film multilayer comprising an alternation of n functional layers (40, 80) having reflection properties in the infrared and/or in solar radiation and (n+1) coatings (20, 60, 100), where n is an integer ≧2, said coatings being composed of a plurality of dielectric layers (24, 26; 64, 66; 104), so that each functional layer (40, 80) is placed between two coatings (20, 60, 100), at least two functional layers (40, 80) each being deposited on a wetting layer (30, 70) itself deposited respectively directly onto a subjacent coating (20, 60), characterized in that two subjacent coatings (20, 60) each comprise at least one dielectric layer (24, 64) and at least one noncrystalline smoothing layer (26, 66) made from a material that is different from the material of said dielectric layer within each coating, said smoothing layer (26, 66) being in contact with said superjacent wetting layer (30, 70) and in that these two subjacent coatings (20, 60) being of different thicknesses, the thickness of the smoothing layer (26, 66) of the subjacent coating (20, 60) that has a total thickness of less than that of the other subjacent coating (60, 20) is less than or equal to the thickness of the smoothing layer (66, 26) of this other subjacent coating (60, 20).
    • 本发明涉及一种具有薄膜多层体的基片(10),该薄膜多层包括在红外和/或太阳辐射和(n + 1)涂层(20)中具有反射特性的n个功能层(40,80) ,60,100),其中n是≥2的整数,所述涂层由多个介电层(24,26; 64,66; 104)组成,使得每个功能层(40,80)位于两个 涂层(20,60,100),至少两个功能层(40,80)分别沉积在分别直接沉积在下层涂层(20,60)上的润湿层(30,70)上,其特征在于两个下层 涂层(20,60)各自包括至少一个介电层(24,64)和至少一个不同于每个涂层内的所述介电层材料的材料制成的非结晶平滑层(26,66),所述平滑化 层(26,66)与所述相邻的润湿层(30,70)接触,并且这两个下相 (20,60)的厚度不同于所述下层涂层(20,60)的平滑层(26,66)的总厚度小于所述另一个下层涂层(60,20)的厚度, 小于或等于该另一相邻涂层(60,20)的平滑层(66,26)的厚度。