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1. 发明申请

US20060037362A1 Photolithography methods and systems 审中-公开
公开(公告)号：US20060037362A1
公开(公告)日：2006-02-23
申请号：US11198697
申请日：2005-08-05
申请人： Nicholas Borrelli , Charlene Smith , Johannes Moll
发明人： Nicholas Borrelli , Charlene Smith , Johannes Moll
IPC分类号： C03B19/09 , C03B32/00
CPC分类号： G03F7/70041 , C03B19/1423 , C03B19/1453 , C03B2201/07 , C03B2201/075 , C03B2201/21 , C03B2201/23 , C03B2207/36 , C03C3/06 , C03C4/0085 , C03C23/002 , C03C2201/21 , C03C2201/23 , G03F7/70058 , G03F7/70941 , G03F7/70958 , G03F7/70966
摘要： Lithographic methods are disclosed. In one such method, a pulsed ultraviolet radiation source for producing ultraviolet lithography radiation having a wavelength shorter than about 300 nm at a fluence of less than 10 mJ/cm2/pulse and a high purity fused silica lithography glass having a concentration of molecular hydrogen of between about 0.02×1018 molecules/cm3 and about 0.18×1018 molecules/cm3 are provided. A lithography pattern is formed with the ultraviolet lithography radiation; the lithography pattern is reduced to produce a reduced lithography pattern; and the reduced lithography pattern is projected onto a ultraviolet radiation sensitive lithography medium to form a printed lithography pattern. At least one of the forming, reducing, and projecting steps includes transmitting the ultraviolet lithography radiation through the high purity fused silica lithography glass. Lithography systems and high purity fused silica lithography glass are also described.

2. 发明申请

US20050112380A1 Synthetic silica glass optical material having high resistance to optically induced index change 失效
标题翻译：合成石英玻璃光学材料具有高的光诱导指数变化
公开(公告)号：US20050112380A1
公开(公告)日：2005-05-26
申请号：US10996507
申请日：2004-11-24
申请人： Heather Boek , Christine Heckle , Johannes Moll , Charlene Smith
发明人： Heather Boek , Christine Heckle , Johannes Moll , Charlene Smith
IPC分类号： G02B1/00 , B32B9/04 , B32B15/00 , C03B8/04 , C03B20/00 , C03C3/06 , C03C15/00 , C03C17/30 , C03C17/32 , C03C19/00
CPC分类号： C03C15/00 , C03C17/30 , C03C17/32 , C03C19/00
摘要： Disclosed is a synthetic silica glass optical material having high resistance to optical damage by ultraviolet radiation in the ultraviolet wavelength range, particularly in the wavelength region of less than about 250 nm and particularly, exhibiting a low laser induced density change. The synthetic silica glass optical material of the present invention contains at least about 0.1 ppm of aluminum and H2 concentration levels greater than about 0.5×1017 molecules/cm2. Additionally, the synthetic silica optical material of the present invention exhibits an H2 to Al ratio of greater than about 1.2, as measured in ×1017/cm3 molecules H2 per ppm Al.
摘要翻译：公开了一种合成石英玻璃光学材料，其特征在于在小于约250nm的波长区域，特别是具有低激光诱导密度变化的紫外线波长范围内具有高抗紫外线辐射的光学损伤。本发明的合成石英玻璃光学材料包含至少约0.1ppm的铝和大于约0.5×10 17分子/ cm 2的H 2 O 2浓度水平。此外，本发明的合成二氧化硅光学材料的显示出H 2/2比率大于约1.2，如在x 10 17 / cm 3 / SUP>分子H 2 2 / ppm。

3. 发明授权

US06754002B2 Photolithography methods and systems 失效
标题翻译：光刻方法和系统
公开(公告)号：US06754002B2
公开(公告)日：2004-06-22
申请号：US09967841
申请日：2001-09-27
申请人： Nicholas F. Borrelli , Charlene M. Smith , Johannes Moll
发明人： Nicholas F. Borrelli , Charlene M. Smith , Johannes Moll
IPC分类号： G02B1314
CPC分类号： G03F7/70041 , C03B19/1423 , C03B19/1453 , C03B2201/07 , C03B2201/075 , C03B2201/21 , C03B2201/23 , C03B2207/36 , C03C3/06 , C03C4/0085 , C03C23/002 , C03C2201/21 , C03C2201/23 , G03F7/70058 , G03F7/70941 , G03F7/70958 , G03F7/70966
摘要： Lithographic methods are disclosed. In one such method, a pulsed ultraviolet radiation source for producing ultraviolet lithography radiation having a wavelength shorter than about 300 nm at a fluence of less than 10 mJ/cm2/pulse and a high purity fused silica lithography glass having a concentration of molecular hydrogen of between about 0.02×1018 molecules/cm3 and about 0.18×1018 molecules/cm3 are provided. A lithography pattern is formed with the ultraviolet lithography radiation; the lithography pattern is reduced to produce a reduced lithography pattern; and the reduced lithography pattern is projected onto a ultraviolet radiation sensitive lithography medium to form a printed lithography pattern. At least one of the forming, reducing, and projecting steps includes transmitting the ultraviolet lithography radiation through the high purity fused silica lithography glass. Lithography systems and high purity fused silica lithography glass are also described.
摘要翻译：公开了平版印刷方法。在一种这样的方法中，用于产生波长短于约300nm的波长小于10mJ / cm 2 /脉冲的紫外光刻辐射的脉冲紫外辐射源和具有浓度为提供约0.02×10 18分子/ cm 3和约0.18×10 18分子/ cm 3之间的分子氢。用紫外光刻法形成光刻图案; 光刻图案被减少以产生减小的光刻图案; 并且将还原的光刻图案投影到紫外线照射敏感光刻介质上以形成印刷光刻图案。形成，还原和突出步骤中的至少一个步骤包括通过高纯度熔融石英光刻玻璃传输紫外光刻辐射。还描述了平版印刷系统和高纯度熔融石英光刻玻璃。

4. 发明授权

US08334986B2 Methods and apparatus for the measurement of film thickness 失效
标题翻译：用于测量膜厚度的方法和装置
公开(公告)号：US08334986B2
公开(公告)日：2012-12-18
申请号：US12712854
申请日：2010-02-25
申请人： Johannes Moll
发明人： Johannes Moll
IPC分类号： G01B11/06
CPC分类号： G01B11/0625 , G01B11/0633 , G01B11/0641 , G01B11/0675
摘要： Methods and apparatus for measuring thickness of a thin film include: obtaining a high-speed thickness measurement of a thin film using a laser projection system and detector array, obtaining thickness measurements of the thin film at one or more locations using a single-point measurement apparatus and determining the accuracy of the high-speed measurement values by comparing them to one or more of the absolute thickness values of the film as measured by the single-point measurement apparatus.
摘要翻译：用于测量薄膜厚度的方法和装置包括：使用激光投射系统和检测器阵列获得薄膜的高速厚度测量，使用单点测量获得薄膜在一个或多个位置处的厚度测量并通过将其与通过单点测量装置测量的一个或多个绝对厚度值进行比较来确定高速测量值的精度。

5. 发明申请

US20100302547A1 METHODS AND APPARATUS FOR MEASURING ION IMPLANT DOSE 失效
标题翻译：用于测量离子植入剂量的方法和装置
公开(公告)号：US20100302547A1
公开(公告)日：2010-12-02
申请号：US12473896
申请日：2009-05-28
申请人： Johannes Moll
发明人： Johannes Moll
IPC分类号： G01N21/55 , G06F19/00
CPC分类号： G01N21/55 , G01N21/9501 , G01N2201/08
摘要： Methods and apparatus for measuring ion implant dose in a material provide for: measuring a reflection spectrum through an implantation surface of the material, the implantation surface having been subjected to an ion implantation process to create a material layer from the implantation surface to a depth within the material and a layer of weakness below the material layer; storing magnitudes of the reflection spectrum as a function of respective wavelengths of incident light on the implantation surface; and computing an ion implant dose used during the ion implantation process based on comparisons of at least two magnitudes of the reflection spectrum at least two corresponding wavelengths of the incident light.
摘要翻译：用于测量材料中的离子注入剂量的方法和装置提供：通过材料的注入表面测量反射光谱，所述注入表面已经经过离子注入工艺，以从植入表面到内部的深度产生材料层材料层和材料层下方的一层弱点; 将入射光的各波长的反射光谱的大小存储在植入面上; 以及基于入射光的至少两个相应波长的至少两个反射谱的大小的比较来计算离子注入过程中使用的离子注入剂量。

6. 发明授权

US06982232B2 Photolithography methods and systems 失效
标题翻译：光刻方法和系统
公开(公告)号：US06982232B2
公开(公告)日：2006-01-03
申请号：US10842979
申请日：2004-05-11
申请人： Nicholas F. Borrelli , Charlene M. Smith , Johannes Moll
发明人： Nicholas F. Borrelli , Charlene M. Smith , Johannes Moll
IPC分类号： C03C3/06
CPC分类号： G03F7/70041 , C03B19/1423 , C03B19/1453 , C03B2201/07 , C03B2201/075 , C03B2201/21 , C03B2201/23 , C03B2207/36 , C03C3/06 , C03C4/0085 , C03C23/002 , C03C2201/21 , C03C2201/23 , G03F7/70058 , G03F7/70941 , G03F7/70958 , G03F7/70966
摘要： Lithographic methods are disclosed. In one such method, a pulsed ultraviolet radiation source for producing ultraviolet lithography radiation having a wavelength shorter than about 300 nm at a fluence of less than 10 mJ/cm2/pulse and a high purity fused silica lithography glass having a concentration of molecular hydrogen of between about 0.02×1018 molecules/cm3 and about 0.18×1018 molecules/cm3 are provided. A lithography pattern is formed with the ultraviolet lithography radiation; the lithography pattern is reduced to produce a reduced lithography pattern; and the reduced lithography pattern is projected onto a ultraviolet radiation sensitive lithography medium to form a printed lithography pattern. At least one of the forming, reducing, and projecting steps includes transmitting the ultraviolet lithography radiation through the high purity fused silica lithography glass. Lithography systems and high purity fused silica lithography glass are also described.
摘要翻译：公开了平版印刷方法。在一种这样的方法中，用于产生具有小于约300nm的波长的紫外光刻辐射的脉冲紫外辐射源，其注量小于10mJ / cm 2 /脉冲和高纯度熔融石英光刻分子氢浓度在约0.02×10 18分子/ cm 3至约0.18×10 18分子/ cm 3之间的玻璃。用紫外光刻法形成光刻图案; 光刻图案被减少以产生减小的光刻图案; 并且将还原的光刻图案投影到紫外线照射敏感光刻介质上以形成印刷光刻图案。形成，还原和突出步骤中的至少一个步骤包括通过高纯度熔融石英光刻玻璃传输紫外光刻辐射。还描述了平版印刷系统和高纯度熔融石英光刻玻璃。

7. 发明授权

US08115932B2 Methods and apparatus for measuring ion implant dose 失效
标题翻译：用于测量离子注入剂量的方法和装置
公开(公告)号：US08115932B2
公开(公告)日：2012-02-14
申请号：US12473896
申请日：2009-05-28
申请人： Johannes Moll
发明人： Johannes Moll
IPC分类号： G01N21/55 , H01L21/425
CPC分类号： G01N21/55 , G01N21/9501 , G01N2201/08
摘要： Methods and apparatus for measuring ion implant dose in a material provide for: measuring a reflection spectrum through an implantation surface of the material, the implantation surface having been subjected to an ion implantation process to create a material layer from the implantation surface to a depth within the material and a layer of weakness below the material layer; storing magnitudes of the reflection spectrum as a function of respective wavelengths of incident light on the implantation surface; and computing an ion implant dose used during the ion implantation process based on comparisons of at least two magnitudes of the reflection spectrum at least two corresponding wavelengths of the incident light.
摘要翻译：用于测量材料中的离子注入剂量的方法和装置提供：通过材料的注入表面测量反射光谱，所述注入表面已经经过离子注入工艺，以从植入表面到内部的深度产生材料层材料层和材料层下方的一层弱点; 将入射光的各波长的反射光谱的大小存储在植入面上; 以及基于入射光的至少两个相应波长的至少两个反射谱的大小的比较来计算离子注入过程中使用的离子注入剂量。

8. 发明申请

US20110205540A1 METHODS AND APPARATUS FOR THE MEASUREMENT OF FILM THICKNESS 失效
标题翻译：测量薄膜厚度的方法和装置
公开(公告)号：US20110205540A1
公开(公告)日：2011-08-25
申请号：US12712854
申请日：2010-02-25
申请人： Johannes Moll
发明人： Johannes Moll
IPC分类号： G01B11/06 , G01J4/00
CPC分类号： G01B11/0625 , G01B11/0633 , G01B11/0641 , G01B11/0675
摘要： Methods and apparatus for measuring thickness of a thin film include: obtaining a high-speed thickness measurement of a thin film using a laser projection system and detector array, obtaining thickness measurements of the thin film at one or more locations using a single-point measurement apparatus and determining the accuracy of the high-speed measurement values by comparing them to one or more of the absolute thickness values of the film as measured by the single-point measurement apparatus.
摘要翻译：用于测量薄膜厚度的方法和装置包括：使用激光投射系统和检测器阵列获得薄膜的高速厚度测量，使用单点测量获得薄膜在一个或多个位置处的厚度测量并通过将其与通过单点测量装置测量的一个或多个绝对厚度值进行比较来确定高速测量值的精度。

9. 发明申请

US20110016975A1 Method and Apparatus For Measuring In-Situ Characteristics Of Material Exfoliation 审中-公开
标题翻译：用于测量材料剥离现场特性的方法和装置
公开(公告)号：US20110016975A1
公开(公告)日：2011-01-27
申请号：US12509139
申请日：2009-07-24
申请人： Gregory Scott Glaesemann , Jessica Danielle Maurer , Johannes Moll , Jayantha Senawiratne
发明人： Gregory Scott Glaesemann , Jessica Danielle Maurer , Johannes Moll , Jayantha Senawiratne
IPC分类号： G01N29/04
CPC分类号： G01N29/42 , G01N29/043 , G01N29/2437 , G01N2291/0231 , G01N2291/0258 , G01N2291/104
摘要： Methods and apparatus for measuring, in-situ, at least one characteristic of a bonding process between a material sheet and a substrate, include: producing acoustic signals in response to acoustic energy within at least one of the material sheet and the substrate proximate to a bonding interface between the material sheet and the substrate; and deriving the at least one characteristic of the bonding process from the acoustic signals.
摘要翻译：用于原位测量材料片和衬底之间的接合过程的至少一个特征的方法和装置包括：响应于材料片和衬底中的至少一个内的声能产生接近于材料片与衬底之间的接合界面; 以及从所述声学信号导出所述接合过程的所述至少一个特性。

10. 发明授权

US07265070B2 Synthetic silica glass optical material having high resistance to optically induced index change 失效
标题翻译：合成石英玻璃光学材料具有高的光诱导指数变化
公开(公告)号：US07265070B2
公开(公告)日：2007-09-04
申请号：US10996507
申请日：2004-11-24
申请人： Heather D Boek , Christine E Heckle , Johannes Moll , Charlene M Smith
发明人： Heather D Boek , Christine E Heckle , Johannes Moll , Charlene M Smith
IPC分类号： C03C3/06 , C03C3/076
CPC分类号： C03C15/00 , C03C17/30 , C03C17/32 , C03C19/00
摘要： Disclosed is a synthetic silica glass optical material having high resistance to optical damage by ultraviolet radiation in the ultraviolet wavelength range, particularly in the wavelength region of less than about 250 nm and particularly, exhibiting a low laser induced density change. The synthetic silica glass optical material of the present invention contains at least about 0.1 ppm of aluminum and H2 concentration levels greater than about 0.5×1017 molecules/cm2. Additionally, the synthetic silica optical material of the present invention exhibits an H2 to Al ratio of greater than about 1.2, as measured in ×1017/cm3 molecules H2 per ppm Al.
摘要翻译：公开了一种合成石英玻璃光学材料，其特征在于在小于约250nm的波长区域，特别是具有低激光诱导密度变化的紫外线波长范围内具有高抗紫外线辐射的光学损伤。本发明的合成石英玻璃光学材料包含至少约0.1ppm的铝和大于约0.5×10 17分子/ cm 2的H 2 O 2浓度水平。此外，本发明的合成二氧化硅光学材料的显示出H 2/2比率大于约1.2，如在x 10 17 / cm 3 / SUP>分子H 2 2 / ppm。

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