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    • 6. 发明授权
    • Plated structures or components
    • 电镀结构或部件
    • US07288327B2
    • 2007-10-30
    • US11014357
    • 2004-12-16
    • Jurgen DanielBrent S. KrusorAlexandra RodkinJohn S Fitch
    • Jurgen DanielBrent S. KrusorAlexandra RodkinJohn S Fitch
    • B32B3/02B32B3/30C25D1/08C25D5/02C25D5/16
    • B81C1/00111B81B2201/0257B81B2201/058C23C18/1605C25D5/022Y10S428/935Y10T428/12361Y10T428/12375Y10T428/12382Y10T428/12389
    • Various structures or components can include plated surfaces or other parts. For example, an article can include a base and a plated part with a limit artifact that results from plating adjacent a non-plateable surface; the limit artifact can be disposed away from the base. Exemplary limit artifacts include lack of protrusions, smooth upper surfaces, and curved surfaces, where a curved surface can transition between a smooth upper surface and an irregular side surface. Exemplary plated structures can be tube-shaped or cup-shaped, with an opening at a top end and, around the opening, a lip with a limit artifact. Wall-like structures can similarly have limit artifacts at their top end. If plating on a mold's side surface, the non-plateable surface can be the lower surface of an overhanging polymer disk or structure positioned on the mold. Plated tubes and wall-like structures can be employed in microfluidic structures.
    • 各种结构或部件可以包括电镀表面或其它部件。 例如,制品可以包括基部和具有极限伪影的电镀部分,其由邻近不可平板表面的电镀产生; 极限伪影可以远离基座放置。 示例性极限瑕疵包括缺少突起,平滑的上表面和弯曲表面,其中弯曲表面可以在光滑的上表面和不规则的侧表面之间转变。 示例性的镀覆结构可以是管状或杯形,在顶端具有开口,并且在开口周围具有极限伪影的唇部。 壁状结构在其顶端可以类似地具有极限伪影。 如果在模具的侧表面上进行电镀,则不平板表面可以是位于模具上的突出聚合物盘或结构的下表面。 电镀管和壁状结构可用于微流体结构。
    • 8. 发明申请
    • GEOMETRY AND DESIGN FOR CONFORMAL ELECTRONICS
    • 合格电子的几何和设计
    • US20100096729A1
    • 2010-04-22
    • US12253390
    • 2008-10-17
    • William S. WongBrent S. KrusorRobert A. Street
    • William S. WongBrent S. KrusorRobert A. Street
    • H01L23/544H01L21/00
    • H05K3/0044G02F2201/56H01L27/14603H01L27/14692H01L27/14812H01L29/78603
    • A method of forming a three-dimensional electronic device includes forming at least one electronic device on a two-dimensional, flexible substrate, the electronic device being formed according to a three-dimensional structure, cutting the two-dimensional, flexible substrate, the cuts being located to allow the two-dimensional substrate to be shaped, the cuts having at least one stress relief feature, and shaping the two-dimensional, flexible substrate to form the three-dimensional structure, the stress relief features arranged to alleviate stress in the three-dimensional structure. A method of forming a three-dimensional electronic device includes forming at least one electronic device on a two-dimensional, flexible substrate, the electronic device being formed according to a three-dimensional structure, cutting the two-dimensional, flexible substrate, the cuts being arranged to as to increase a radius of curvature to meet a stress relief parameter when the substrate is shaped, and shaping the two-dimensional, flexible substrate to form the three-dimensional structure. A three-dimensional electronic device having an electronic device formed on a flexible substrate, the flexible substrate formed into a three-dimensional structure, wedged-shaped portions removed from the substrate to allow the substrate to be formed into the three-dimensional structure, and a stress relief feature arranged adjacent to the wedge-shaped portions.
    • 形成三维电子器件的方法包括在二维柔性基板上形成至少一个电子器件,该电子器件根据三维结构形成,切割二维柔性基片,切割 定位成允许二维基底成形,切口具有至少一个应力消除特征,并且成形二维柔性基底以形成三维结构,应力消除特征被设置为减轻二维基底中的应力 三维结构。 形成三维电子器件的方法包括在二维柔性基板上形成至少一个电子器件,该电子器件根据三维结构形成,切割二维柔性基片,切割 被布置成当基底成形时增加曲率半径以满足应力消除参数,并且将二维柔性基底成形以形成三维结构。 一种具有形成在柔性基板上的电子器件的三维电子器件,形成为三维结构的柔性衬底,从衬底移除楔形部分以使衬底形成三维结构;以及 紧邻楔形部分布置的应力消除特征。