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1. 发明申请

US20090095634A1 Plating method 审中-公开
标题翻译：电镀方法
公开(公告)号：US20090095634A1
公开(公告)日：2009-04-16
申请号：US11907589
申请日：2007-10-15
申请人： Natsuki Makino , Keisuke Namiki , Kunihito Ide , Junji Kunisawa , Katsuyuki Musaka , Philippe Vereecken , Brett C. Baker-O'Neal , Hariklia Deligianni , Keith Kwietniak
发明人： Natsuki Makino , Keisuke Namiki , Kunihito Ide , Junji Kunisawa , Katsuyuki Musaka , Philippe Vereecken , Brett C. Baker-O'Neal , Hariklia Deligianni , Keith Kwietniak
IPC分类号： C25D5/48 , C25D5/00
CPC分类号： C25D17/00 , C25D17/008 , C25D21/12 , H01L21/2885 , H01L21/76877
摘要： A plating method can form a plated film having a uniform thickness over the entire surface, including the peripheral surface, of a substrate. The plating method includes: disposing an anode so as to face a conductive film, formed on a substrate, which serves as a cathode, and disposing an auxiliary cathode on an ring-shaped seal member for sealing a peripheral portion of the substrate; bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution; and supplying electric currents between the anode and the conductive film, and between the anode and the auxiliary cathode to carry out plating.
摘要翻译：电镀方法可以在基板的整个表面（包括外周表面）上形成均匀厚度的镀膜。电镀方法包括：将阳极设置成面对形成在用作阴极的基板上的导电膜，并将辅助阴极设置在用于密封基板的周边部分的环形密封构件上; 使导电膜，阳极和辅助阴极与电镀液接触; 并且在阳极和导电膜之间以及阳极和辅助阴极之间提供电流以进行电镀。

2. 发明申请

US20070034526A1 Electrolytic processing apparatus and method 审中-公开
标题翻译：电解处理装置及方法
公开(公告)号：US20070034526A1
公开(公告)日：2007-02-15
申请号：US11202684
申请日：2005-08-12
申请人： Natsuki Makino , Junji Kunisawa , Keisuke Namiki , Yukio Fukunaga , Katsuyuki Musaka , Ray Fang , Emanuel Cooper , John Cotte , Hariklia Deligianni , Keith Kwietniak , Brett Baker-O'Neal , Matteo Flotta , Philippe Vereecken
发明人： Natsuki Makino , Junji Kunisawa , Keisuke Namiki , Yukio Fukunaga , Katsuyuki Musaka , Ray Fang , Emanuel Cooper , John Cotte , Hariklia Deligianni , Keith Kwietniak , Brett Baker-O'Neal , Matteo Flotta , Philippe Vereecken
IPC分类号： B23H3/00
CPC分类号： B23H5/08 , C25F3/02 , C25F7/00
摘要： An electrolytic processing apparatus can planarize uniformly over an entire surface of a substrate under a low pressure without any damages to the substrate. The electrolytic processing apparatus has a substrate holder configured to hold and rotate a substrate having a metal film formed on a surface of the substrate and an electrolytic processing unit configured to perform an electrolytic process on the substrate held by the substrate holder. The electrolytic processing unit has a rotatable processing electrode, a polishing pad attached to the rotatable processing electrode, and a pressing mechanism configured to press the polishing pad against the substrate. The electrolytic processing unit also has a liquid supply mechanism configured to supply an electrolytic processing liquid between the substrate and the rotatable processing electrode, a relative movement mechanism operable to move the substrate and the rotatable processing electrode relative to each other, and a power supply configured to applying a voltage between the rotatable processing electrode and the metal film of the substrate so that the rotatable processing electrode serves as a cathode and the metal film of the substrate serves as an anode.
摘要翻译：电解处理装置可以在低压下在基板的整个表面上均匀地平坦化，而不会对基板造成任何损坏。所述电解处理装置具有基板保持件，所述基板保持器被构造成保持和旋转形成在所述基板的表面上的金属膜的基板和被配置为在由所述基板保持器保持的所述基板上进行电解处理的电解处理单元。电解处理单元具有可旋转的处理电极，附接到可旋转处理电极的抛光垫，以及被配置为将抛光垫压靠在基板上的按压机构。电解处理单元还具有：液体供给机构，被构造成在基板和可旋转处理电极之间提供电解处理液体;相对移动机构，其可操作以相对于彼此移动基板和可旋转处理电极;电源配置在可旋转处理电极和基板的金属膜之间施加电压，使得可旋转处理电极用作阴极，并且基板的金属膜用作阳极。

3. 发明授权

US07901550B2 Plating apparatus 有权
标题翻译：电镀装置
公开(公告)号：US07901550B2
公开(公告)日：2011-03-08
申请号：US11907591
申请日：2007-10-15
申请人： Natsuki Makino , Keisuke Namiki , Kunihito Ide , Junji Kunisawa , Katsuyuki Musaka
发明人： Natsuki Makino , Keisuke Namiki , Kunihito Ide , Junji Kunisawa , Katsuyuki Musaka
IPC分类号： C25D17/06
CPC分类号： C25D17/00 , C25D5/52 , C25D17/004 , C25D17/007 , C25D21/12 , H01L21/2885 , H01L21/76877
摘要： A plating apparatus can form a plated film having a uniform thickness over the entire surface of a substrate without a change of members. The plating apparatus includes a substrate holder, a cathode contact for contacting a conductive film formed on the substrate so that the conductive film serves as a cathode, a ring-shaped seal member for covering the cathode contact and bringing its inner circumferential portion into contact with the peripheral portion of the substrate to seal the peripheral portion of the substrate, an anode disposed so as to face the conductive film formed on the substrate, and an auxiliary cathode disposed with respect to the seal member such that at least part of the auxiliary cathode is exposed on a surface of the seal member. Plating is carried out by bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution.
摘要翻译：电镀装置可以在基板的整个表面上形成均匀厚度的镀膜，而不会改变构件。镀覆装置包括：基板保持件，用于使形成在基板上的导电膜接触以使导电膜用作阴极的阴极接触件，用于覆盖阴极接触并使其内周部分与其接触的环形密封构件所述基板的周边部分密封所述基板的周边部分，设置成面对形成在所述基板上的导电膜的阳极和相对于所述密封部件设置的辅助阴极，使得所述辅助阴极的至少一部分暴露在密封构件的表面上。通过使导电膜，阳极和辅助阴极与电镀液接触来进行电镀。

4. 发明申请

US20090095618A1 Plating apparatus 有权
标题翻译：电镀装置
公开(公告)号：US20090095618A1
公开(公告)日：2009-04-16
申请号：US11907591
申请日：2007-10-15
申请人： Natsuki Makino , Keisuke Namiki , Kunihito Ide , Junji Kunisawa , Katsuyuki Musaka
发明人： Natsuki Makino , Keisuke Namiki , Kunihito Ide , Junji Kunisawa , Katsuyuki Musaka
IPC分类号： C25D17/00
CPC分类号： C25D17/00 , C25D5/52 , C25D17/004 , C25D17/007 , C25D21/12 , H01L21/2885 , H01L21/76877
摘要： A plating apparatus can form a plated film having a uniform thickness over the entire surface of a substrate without a change of members. The plating apparatus included a substrate holder, a cathode contact for contacting a conductive film formed on the substrate so that the conductive film serves as a cathode, a ring-shaped seal member for covering the cathode contact and bringing its inner circumferential portion into contact with the peripheral portion of the substrate to seal the peripheral portion of the substrate, an anode disposed so as to face the conductive film formed on the substrate, and an auxiliary cathode disposed to the seal member such that at least part of the auxiliary cathode expose on a surface of the seal member. Plating is carried out by bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution.
摘要翻译：电镀装置可以在基板的整个表面上形成均匀厚度的镀膜，而不会改变构件。电镀装置包括：衬底保持器，用于接触形成在衬底上的导电膜的阴极接触件，使得导电膜用作阴极;环形密封构件，用于覆盖阴极接触并使其内周部分与基板的周边部分，以密封基板的周边部分，设置成面对形成在基板上的导电膜的阳极和设置在密封部件上的辅助阴极，使得辅助阴极的至少一部分暴露于密封件的表面。通过使导电膜，阳极和辅助阴极与电镀液接触来进行电镀。

5. 发明申请

US20070034525A1 Electrolytic processing method 审中-公开
标题翻译：电解加工方法
公开(公告)号：US20070034525A1
公开(公告)日：2007-02-15
申请号：US11203545
申请日：2005-08-12
申请人： Masayuki Kumekawa , Norio Kimura , Yukio Fukunaga , Katsuyuki Musaka , Hariklia Deligianni , Emanuel Cooper , Philippe Vereecken
发明人： Masayuki Kumekawa , Norio Kimura , Yukio Fukunaga , Katsuyuki Musaka , Hariklia Deligianni , Emanuel Cooper , Philippe Vereecken
IPC分类号： B23H9/00
CPC分类号： B23H5/08
摘要： An electrolytic processing method is used to remove a metal film formed on a surface of a substrate. The electrolytic processing method includes providing a feeding electrode 31 and a processing electrode 32 on a table 12, providing an insulating member 36 between the feeding electrode and the processing electrode, holding the substrate W by a substrate carrier 11, bringing the substrate into contact with the insulating member, supplying first and second electrolytic processing liquids to gaps between the feeding electrode and the substrate and between the processing electrode and the substrate, respectively, while the first and second electrolytic processing liquids are electrically isolated, applying voltage between the feeding electrode and the processing electrode, and making a relative movement between the substrate carrier and the table to electrically process the metal film.
摘要翻译：使用电解处理方法去除在基板的表面上形成的金属膜。电解处理方法包括在台12上设置馈电电极31和处理电极32，在馈电电极和处理电极之间提供绝缘构件36，通过衬底载体11保持衬底W，使衬底与所述绝缘构件在所述第一和第二电解处理液体被电绝缘的同时，在所述馈电电极和所述衬底之间以及所述处理电极和所述衬底之间的间隙中分别供应第一和第二电解处理液体，处理电极，并且在基板载体和工作台之间进行相对运动以对金属膜进行电加工。

6. 发明授权

US06607790B1 Method of forming a thin film for a semiconductor device 失效
标题翻译：形成半导体器件用薄膜的方法
公开(公告)号：US06607790B1
公开(公告)日：2003-08-19
申请号：US08888499
申请日：1997-07-07
申请人： Katsuyuki Musaka
发明人： Katsuyuki Musaka
IPC分类号： H05H146
CPC分类号： C23C16/402 , C23C16/5096 , C23C16/511 , H01L21/02131 , H01L21/02274 , H01L21/31612
摘要： The present invention relates to a plasma-enhanced chemical vapor deposition (PECVD) method of depositing a thin layer of a material, such as silicon dioxide, on the surface of a body, such as a semiconductor substrate. The method includes forming in a deposition chamber a plasma by means of two electrical power sources of different frequencies. A reaction gas is admitted into the deposition chamber and subjected to the plasma. The reaction gas is a mixture of tetraethylorthosilicate and a halogen gas, such as a gas of fluorine, chlorine or bromine. The reaction gas is reacted by the plasma to cause the material of the gas to deposit on the body which is within the chamber. This results in a deposited layer having a smoothly tapered surface even when the surface of the body possesses valleys and mesas, and thus prevents the formation of voids.
摘要翻译：等离子体增强化学气相沉积（PECVD）技术领域本发明涉及在诸如半导体衬底的物体的表面上沉积诸如二氧化硅的材料的薄层的等离子体增强化学气相沉积（PECVD）方法。该方法包括通过两个不同频率的电源在沉积室中形成等离子体。反应气体进入沉积室并进行等离子体。反应气体是原硅酸四乙酯和卤素气体的混合物，例如氟，氯或溴的气体。反应气体被等离子体反应，使得气体的材料沉积在室内的主体上。这导致沉积层具有平滑的锥形表面，即使当主体的表面具有谷和台面时，从而防止形成空隙。

7. 发明申请

US20070034502A1 Electrolytic processing apparatus 审中-公开
标题翻译：电解处理装置
公开(公告)号：US20070034502A1
公开(公告)日：2007-02-15
申请号：US11202899
申请日：2005-08-12
申请人： Masayuki Kumekawa , Norio Kimura , Yukio Fukunaga , Katsuyuki Musaka
发明人： Masayuki Kumekawa , Norio Kimura , Yukio Fukunaga , Katsuyuki Musaka
IPC分类号： C25D17/00
CPC分类号： C25D17/001 , C25D17/002 , C25D17/02
摘要： An electrolytic processing apparatus is used to remove a metal film formed on a surface of a substrate. The electrolytic processing apparatus includes a feeding electrode 31 for feeding electricity to a metal film 6 on a substrate W, a processing electrode 32 for processing the metal film 6, a substrate carrier 11 for holding the substrate W, a first supply passage 51 for supplying a first electrolytic processing liquid, a second supply passage 52 for supplying a second electrolytic processing liquid, an insulating member 36 for electrically isolating the first electrolytic processing liquid and the second electrolytic processing liquid, a table 12 on which the feeding electrode 31, the processing electrode 32, and the insulating member 36 are disposed, and a relative movement mechanism 17 for making a relative movement between the table 12 and the substrate carrier 11.
摘要翻译：使用电解处理装置去除形成在基板表面上的金属膜。该电解处理装置包括用于向基板W上的金属膜6供电的供电电极31，用于处理金属膜6的处理电极32，用于保持基板W的基板载体11，用于供给的第一供给通道51 第一电解处理液，用于供给第二电解处理液的第二供应通道52，用于电隔离第一电解处理液和第二电解处理液的绝缘构件36，供给电极31，处理电极32和绝缘部件36，以及用于在工作台12和基板载体11之间进行相对移动的相对移动机构17。

8. 发明授权

US5571571A Method of forming a thin film for a semiconductor device 失效
标题翻译：形成半导体器件用薄膜的方法
公开(公告)号：US5571571A
公开(公告)日：1996-11-05
申请号：US259584
申请日：1994-06-14
申请人： Katsuyuki Musaka , Shinzuke Mizuno
发明人： Katsuyuki Musaka , Shinzuke Mizuno
IPC分类号： C23C16/40 , C23C16/509 , C23C16/511 , H01L21/316 , H05H1/02 , H05H1/24 , H05H1/30
CPC分类号： H01L21/02131 , C23C16/402 , C23C16/5096 , C23C16/511 , H01L21/02274 , H01L21/31608 , H01L21/31612
摘要： A method of forming conformal, high quality silicon oxide films that can be deposited over closely spaced, submicron lines and spaces without the formation of voids, comprises forming a plasma of TEOS and a selected halogen-containing gas in certain ratios. By proper control of the energy sources that create the plasma, the proper selection of the halogen-containing gas and selection of other processing parameters, high deposition rates can also be achieved.
摘要翻译：形成可以紧密间隔的亚微米线和空间沉积而不形成空隙的保形，高质量的氧化硅膜的方法包括以一定比例形成TEOS等离子体和选定的含卤素气体。通过适当控制产生等离子体的能量源，适当选择含卤素气体和选择其它加工参数，也可实现高沉积速率。

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