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1. 发明申请

US20080179534A1 Nuclear radiation detection system 失效
标题翻译：核辐射检测系统
公开(公告)号：US20080179534A1
公开(公告)日：2008-07-31
申请号：US11699335
申请日：2007-01-30
申请人： Narsingh Bahadur Singh , Aaron A. Pesetski , Andre Berghmans , Brian P. Wagner , David Kahler , David J. Knuteson , Darren Thomson
发明人： Narsingh Bahadur Singh , Aaron A. Pesetski , Andre Berghmans , Brian P. Wagner , David Kahler , David J. Knuteson , Darren Thomson
IPC分类号： G01J1/42
CPC分类号： G01J1/429 , G01J1/0488
摘要： A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.
摘要翻译：公开了使用窄带UV晶体滤波器的核辐射检测系统。由于可以在大约200-350nm（紫外范围）的光谱范围内检测在β辐射和γ射线衰变期间产生的光子，所以使用基于UV滤光片的光电传感器进行检测。核辐射检测系统包括能够聚焦在辐射源上的光学组件，具有窄带UV晶体滤波器并被定位成接收透过光学组件的光的UV滤光器组件，以及定位成接收透过光学组件的光的光检测器紫外线过滤器总成。窄带UV晶体滤波器由选自氟硅酸镍，氟硼酸镍和硫酸镍镍的晶体制成。可以掺杂氟硅酸镍，氟硼酸镍和硫酸镍钾以实现更窄的带过滤器。辐射检测系统可用于监测核电厂或核废料堆场的污染。也可用于在发生核事故时监视污染。

2. 发明授权

US07525099B2 Nuclear radiation detection system 失效
标题翻译：核辐射检测系统
公开(公告)号：US07525099B2
公开(公告)日：2009-04-28
申请号：US11699335
申请日：2007-01-30
申请人： Narsingh Bahadur Singh , Aaron A. Pesetski , Andre Berghmans , Brian P. Wagner , David Kahler , David J. Knuteson , Darren Thomson
发明人： Narsingh Bahadur Singh , Aaron A. Pesetski , Andre Berghmans , Brian P. Wagner , David Kahler , David J. Knuteson , Darren Thomson
IPC分类号： G01J1/42
CPC分类号： G01J1/429 , G01J1/0488
摘要： A nuclear radiation detection system using narrowband UV crystal filters is disclosed. Since the photons produced during the decay of β- and γ-radiation can be detected in the spectral range of about 200-350 nm (the ultraviolet range), UV filter based photo sensors are utilized for detection. The nuclear radiation detection system comprises an optical assembly capable of focusing on a source of radiation, a UV filter assembly having a narrowband UV crystal filter and positioned to receive light transmitted through the optical assembly, and a light detector positioned to receive light transmitted through the UV filter assembly. The narrowband UV crystal filter is fabricated from crystals selected from the group consisting of nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate. The nickel fluorosilicate, nickel fluoroborate, and potassium nickel sulfate may be doped to achieve even narrower band filter. The radiation detection system can be used to monitor contamination in a nuclear plant or a nuclear waste dump site. It may also be used for surveillance of contamination in case of a nuclear accident.
摘要翻译：公开了使用窄带UV晶体滤波器的核辐射检测系统。由于可以在大约200-350nm（紫外范围）的光谱范围内检测在β辐射和γ射线衰变期间产生的光子，所以使用基于UV滤光片的光电传感器进行检测。核辐射检测系统包括能够聚焦在辐射源上的光学组件，具有窄带UV晶体滤波器并被定位成接收透过光学组件的光的UV滤光器组件，以及定位成接收透过光学组件的光的光检测器紫外线过滤器总成。窄带UV晶体滤波器由选自氟硅酸镍，氟硼酸镍和硫酸镍镍的晶体制成。可以掺杂氟硅酸镍，氟硼酸镍和硫酸镍钾以实现更窄的带过滤器。辐射检测系统可用于监测核电厂或核废料堆场的污染。也可用于在发生核事故时监视污染。

3. 发明申请

US20080206121A1 Solid solution wide bandgap semiconductor materials 审中-公开
标题翻译：固溶体宽带隙半导体材料
公开(公告)号：US20080206121A1
公开(公告)日：2008-08-28
申请号：US12081636
申请日：2008-04-18
申请人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson
发明人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson
IPC分类号： C01B33/00 , C23C16/06
CPC分类号： C30B23/02 , C30B23/025 , C30B25/183 , C30B29/36 , C30B29/406
摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AIN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
摘要翻译：公开了一种用于在没有任何缓冲层的诸如（AIN）x（SiC）1（1-x）之类的合金膜上生长半导体晶体的衬底和方法。可以通过使用AlN和SiC粉末作为原料的气相沉积法在SiC衬底上形成（AIN）x（SiC）（1-x））合金膜。（AIN）x（SiC）（1-x））合金膜为GaN或SiC外延生长提供了更好的晶格匹配，并减少了具有更好晶格的外延生长的GaN中的缺陷匹配和化学。

4. 发明授权

US07371282B2 Solid solution wide bandgap semiconductor materials 有权
标题翻译：固溶体宽带隙半导体材料
公开(公告)号：US07371282B2
公开(公告)日：2008-05-13
申请号：US11484691
申请日：2006-07-12
申请人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson
发明人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson
IPC分类号： C30B25/12 , C30B25/14
CPC分类号： C30B23/02 , C30B23/025 , C30B25/183 , C30B29/36 , C30B29/406
摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.
摘要翻译：公开了一种用于在没有任何缓冲层的诸如（AIN）x（SiC）1（1-x）之类的合金膜上生长半导体晶体的衬底和方法。可以通过使用AlN和SiC粉末作为起始材料的气相沉积工艺在SiC衬底上形成（AIN）x（SiC）（1-x））合金膜。（AIN）x（SiC）（1-x））合金膜为GaN或SiC外延生长提供了更好的晶格匹配，并减少了具有更好晶格的外延生长的GaN中的缺陷匹配和化学。

5. 发明申请

US20080011223A1 Solid solution wide bandgap semiconductor materials 有权
公开(公告)号：US20080011223A1
公开(公告)日：2008-01-17
申请号：US11484691
申请日：2006-07-12
申请人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson
发明人： Narsingh Bahadur Singh , Brian Wagner , Mike Aumer , Darren Thomson , David Kahler , Andre Berghmans , David J. Knuteson
IPC分类号： C30B25/00 , C30B23/00 , C30B28/12
CPC分类号： C30B23/02 , C30B23/025 , C30B25/183 , C30B29/36 , C30B29/406
摘要： A substrate and method for growing a semi-conductive crystal on an alloy film such as (AIN)x(SiC)(1-x) without any buffer layer is disclosed. The (AIN)x(SiC)(1-x) alloy film can be formed on a SiC substrate by a vapor deposition process using AlN and SiC powder as starting materials. The (AIN)x(SiC)(1-x) alloy film provides a better lattice match for GaN or SiC epitaxial growth and reduces defects in epitaxially grown GaN with better lattice match and chemistry.

6. 发明申请

US20100192840A1 SEMICONDUCTOR HETEROJUNCTION DEVICES BASED ON SiC 有权
标题翻译：基于SiC的半导体异质结器件
公开(公告)号：US20100192840A1
公开(公告)日：2010-08-05
申请号：US12713753
申请日：2010-02-26
申请人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
发明人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
IPC分类号： C30B23/02
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/7781 , H01L29/7786
摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
摘要翻译：可以通过CVD，PVD和MOCVD生长用于SiC上异质结构的Si（1-x）MxC材料。掺杂有诸如Al的金属的SIC改变带隙并因此改变异质结构。使用SiC和金属源的SiC Si（1-x）MxC异质结的生长允许制造改进的HFMT（高频迁移率晶体管），HBT（异质结双极晶体管）和HEMT（高电子迁移率晶体管）。

7. 发明授权

US07855108B2 Semiconductor heterojunction devices based on SiC 有权
标题翻译：基于SiC的半导体异质结器件
公开(公告)号：US07855108B2
公开(公告)日：2010-12-21
申请号：US12713753
申请日：2010-02-26
申请人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
发明人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
IPC分类号： H01L21/338
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/7781 , H01L29/7786
摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).
摘要翻译：可以通过CVD，PVD和MOCVD生长用于SiC上异质结构的Si（1-x）MxC材料。掺杂有诸如Al的金属的SIC改变带隙并因此改变异质结构。使用SiC和金属源的SiC Si（1-x）MxC异质结的生长允许制造改进的HFMT（高频迁移率晶体管），HBT（异质结双极晶体管）和HEMT（高电子迁移率晶体管）。

8. 发明申请

US20090302426A1 Method for the Selective Deposition of Germanium Nanofilm on a Silicon Substrate and Semiconductor Devices Made Therefrom 有权
标题翻译：锗硅纳米薄膜的选择性沉积方法及其制造的半导体器件
公开(公告)号：US20090302426A1
公开(公告)日：2009-12-10
申请号：US12136193
申请日：2008-06-10
申请人： Sean R. McLaughlin , Narsingh Bahadur Singh , Brian Wagner , Andre Berghmans , David J. Knuteson , David Kahler , Anthony A. Margarella
发明人： Sean R. McLaughlin , Narsingh Bahadur Singh , Brian Wagner , Andre Berghmans , David J. Knuteson , David Kahler , Anthony A. Margarella
IPC分类号： H01L21/329 , H01L29/868
CPC分类号： F01P3/2285 , F01P2025/04 , Y10S977/774
摘要： A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.
摘要翻译：提供了一种用于制造具有以离散区域或图案选择性地沉积在硅衬底上的锗纳米膜层的半导体器件的工艺。还提供了一种半导体器件，其具有锗膜层，其设置在期望的区域中或具有可在不进行蚀刻和图案化锗膜层的情况下制备的所需图案。还提供了制备具有一种导电类型的硅衬底和不同导电类型的锗纳米膜层的半导体器件的工艺。提供具有选择性生长的锗纳米薄膜层的半导体器件，例如包括发光二极管，光电探测器等的二极管。该方法也可用于制造诸如CMOS器件，MOSFET器件等的先进的半导体器件。

9. 发明授权

US07683400B1 Semiconductor heterojunction devices based on SiC 有权
公开(公告)号：US07683400B1
公开(公告)日：2010-03-23
申请号：US11474398
申请日：2006-06-26
申请人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
发明人： Narsingh B. Singh , Brian P. Wagner , David J. Knuteson , Michael E. Aumer , Andre Berghmans , Darren Thomson , David Kahler
IPC分类号： H01L29/08
CPC分类号： H01L29/1608 , H01L29/66068 , H01L29/66242 , H01L29/66431 , H01L29/737 , H01L29/7781 , H01L29/7786
摘要： A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

10. 发明授权

US07737534B2 Semiconductor devices that include germanium nanofilm layer disposed within openings of silicon dioxide layer 有权
标题翻译：包括设置在二氧化硅层的开口内的锗纳米薄膜层的半导体器件
公开(公告)号：US07737534B2
公开(公告)日：2010-06-15
申请号：US12136193
申请日：2008-06-10
申请人： Sean R. McLaughlin , Narsingh Bahadur Singh , Brian Wagner , Andre Berghmans , David J. Knuteson , David Kahler , Anthony A. Margarella
发明人： Sean R. McLaughlin , Narsingh Bahadur Singh , Brian Wagner , Andre Berghmans , David J. Knuteson , David Kahler , Anthony A. Margarella
IPC分类号： H01L29/868
CPC分类号： F01P3/2285 , F01P2025/04 , Y10S977/774
摘要： A process is provided for fabricating a semiconductor device having a germanium nanofilm layer that is selectively deposited on a silicon substrate in discrete regions or patterns. A semiconductor device is also provided having a germanium film layer that is disposed in desired regions or having desired patterns that can be prepared in the absence of etching and patterning the germanium film layer. A process is also provided for preparing a semiconductor device having a silicon substrate having one conductivity type and a germanium nanofilm layer of a different conductivity type. Semiconductor devices are provided having selectively grown germanium nanofilm layer, such as diodes including light emitting diodes, photodetectors, and like. The method can also be used to make advanced semiconductor devices such as CMOS devices, MOSFET devices, and the like.
摘要翻译：提供了一种用于制造具有以离散区域或图案选择性地沉积在硅衬底上的锗纳米膜层的半导体器件的工艺。还提供了一种半导体器件，其具有锗膜层，其设置在期望的区域中或具有可在不进行蚀刻和图案化锗膜层的情况下制备的所需图案。还提供了制备具有一种导电类型的硅衬底和不同导电类型的锗纳米膜层的半导体器件的工艺。提供具有选择性生长的锗纳米薄膜层的半导体器件，例如包括发光二极管，光电探测器等的二极管。该方法也可用于制造诸如CMOS器件，MOSFET器件等的先进的半导体器件。

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