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1. 发明授权

US5855651A Method for processing waste gas exhausted from chemical vapor and deposition equipment 失效
标题翻译：用于处理从化学气相沉积设备排出的废气的方法
公开(公告)号：US5855651A
公开(公告)日：1999-01-05
申请号：US966176
申请日：1997-11-07
申请人： Naoyasu Kurita , Takayoshi Azumi , Kazuhisa Onozawa , Tsuyoshi Watanabe , Mitsutoshi Sasajima , Naoki Yamada
发明人： Naoyasu Kurita , Takayoshi Azumi , Kazuhisa Onozawa , Tsuyoshi Watanabe , Mitsutoshi Sasajima , Naoki Yamada
IPC分类号： B01D46/04 , B01D51/04
CPC分类号： B01D46/003 , B01D46/0068 , B01D46/04 , B01D51/04 , B01D2273/12
摘要： A method of processing waste gas exhausted from chemical vapor deposition equipment, which entails:a) contacting a waste gas containing viscous substances with a filtering aid agent,b) passing the waste gas containing the viscous substances exhausted from the chemical vapor deposition equipment, and which has been contacted with the filtering aid agent, through a filtering and dust collecting unit, whereby the viscous substances are condensed with the filtering aid agent on the filtering and dust collecting unit, andc) removing the condensed matter from the surface of the filter, thereby preventing clogging thereof.
摘要翻译：一种处理从化学气相沉积设备排出的废气的方法，其包括：a）使含有粘性物质的废气与助滤剂接触，b）使含有从化学气相沉积设备排出的粘性物质的废气通过，以及已经通过过滤和集尘单元与过滤助剂进行接触，由此粘性物质与过滤和集尘单元上的过滤助剂一起被冷凝，以及c）从过滤器的表面去除凝聚物质从而防止堵塞。

2. 发明授权

US06547863B2 Metal compound solution and thin film formation using the same 失效
标题翻译：金属化合物溶液和使用其的薄膜形成
公开(公告)号：US06547863B2
公开(公告)日：2003-04-15
申请号：US09784191
申请日：2001-02-16
申请人： Kazuhisa Onozawa , Naoki Yamada
发明人： Kazuhisa Onozawa , Naoki Yamada
IPC分类号： C23C1640
CPC分类号： C23C16/409
摘要： A metal compound solution of a metal compound represented by formula (I): wherein R1, R2, and R3 are each a halogen-substituted or unsubstituted alkyl group having 1 to 8 carbon atoms which may contain an oxygen atom in its carbon chain; R4 is a straight-chain or branched alkylene group having 2 to 18 carbon atoms; M is lead, titanium or zirconium: when M is lead, l, m and n represent 0, 2 and 0, respectively; when M is titanium or zirconium, n represents 0 or 1, and l and m each represent an integer of 0 to 4 satisfying equation: 1+m+2n=4, in a cyclohexane compound represented by formula (II): wherein R5 represents a hydrogen atom or an alkyl group having 1 to 4 carbon atoms; and p represents 1 or 2.
摘要翻译：由式（I）表示的金属化合物的金属化合物溶液：其中R 1，R 2和R 3各自为可以在其碳链中含有氧原子的具有1至8个碳原子的卤素取代或未取代的烷基; R4是具有2至18个碳原子的直链或支链亚烷基; M是铅，钛或锆：当M为铅时，l，m和n分别表示0,2和0; 当M是钛或锆时，n表示0或1，并且在由式（II）表示的环己烷化合物中，l和m各自表示0至4的整数，满足式1 + m + 2n = 4）其中R5表示氢原子或碳原子数为1〜4的烷基; p表示1或2。

3. 发明授权

US06743933B2 Process of forming thin film and precursor for chemical vapor deposition 失效
标题翻译：用于化学气相沉积的薄膜和前体的形成工艺
公开(公告)号：US06743933B2
公开(公告)日：2004-06-01
申请号：US10286906
申请日：2002-11-04
申请人： Kazuhisa Onozawa , Atsuya Yoshinaka , Naoki Yamada , Atsushi Sakurai
发明人： Kazuhisa Onozawa , Atsuya Yoshinaka , Naoki Yamada , Atsushi Sakurai
IPC分类号： C07F728
CPC分类号： C23C16/409 , C07F7/003
摘要： A process of producing a strontium titanate, barium titanate or barium strontium titanate thin film by chemical vapor deposition which comprises using a titanium compound represented by formula (I): wherein R1 represents a hydrogen atom or a methyl group; and R2 and R3 each represent a methyl group or an ethyl group, or R2 and R3 are connected together to form a methylene group, a methylmethylene group or a dimethylmethylene group.
摘要翻译：一种通过化学气相沉积法生产钛酸锶钛酸钡或钛酸钡钡薄膜的方法，该方法包括使用由式（I）表示的钛化合物：其中R 1表示氢原子或甲基; R 2和R 3各自表示甲基或乙基，或R 2和R 3连接在一起形成亚甲基，甲基亚甲基或二甲基亚甲基。

4. 发明授权

US06429325B1 Copper material for chemical vapor deposition and process for forming thin film using the same 有权
标题翻译：用于化学气相沉积的铜材料和使用其形成薄膜的工艺
公开(公告)号：US06429325B1
公开(公告)日：2002-08-06
申请号：US09730403
申请日：2000-12-06
申请人： Kazuhisa Onozawa , Toshiya Shingen
发明人： Kazuhisa Onozawa , Toshiya Shingen
IPC分类号： C07F108
CPC分类号： C23C16/18 , C07C45/77 , C07C49/92
摘要： A material for chemical vapor deposition comprising a &bgr;-diketonatocopper (II) complex which is liquid at room temperature.
摘要翻译：一种用于化学气相沉积的材料，其包含在室温下为液体的β-二酮偶联剂（II）络合物。

5. 发明授权

US06316064B1 Process of producing a ruthenium or ruthenium oxide thin film 有权
标题翻译：制造钌或氧化钌薄膜的方法
公开(公告)号：US06316064B1
公开(公告)日：2001-11-13
申请号：US09487241
申请日：2000-01-20
申请人： Kazuhisa Onozawa , Akifumi Masuko , Toshiya Shingen
发明人： Kazuhisa Onozawa , Akifumi Masuko , Toshiya Shingen
IPC分类号： C23C800
CPC分类号： C23C16/18 , C23C16/40
摘要： A ruthenium or ruthenium oxide thin film produced by CVD using as a ruthenium source a compound represented by formula (I): wherein R1 and R2 represent different alkyl groups having 1 to 4 carbon atoms.
摘要翻译：一种氧化钌或氧化钌薄膜，其通过CVD作为钌源制备由式（I）表示的化合物：其中R 1和R 2表示不同的具有1至4个碳原子的烷基。

6. 发明申请

US20070232821A1 Composition Containing Siloxane Compound and Phenol Compound 有权
标题翻译：含有硅氧烷化合物和苯酚化合物的组合物
公开(公告)号：US20070232821A1
公开(公告)日：2007-10-04
申请号：US11597036
申请日：2005-12-21
申请人： Kunio Ogasawara , Kazuhisa Onozawa , Hiroki Sato , Takashi Higashino
发明人： Kunio Ogasawara , Kazuhisa Onozawa , Hiroki Sato , Takashi Higashino
IPC分类号： C07F7/21 , C07F7/02 , C07F7/18
CPC分类号： C23C16/401 , C07F7/21 , C09D4/00 , C08G77/04
摘要： A composition containing 100 parts by mass of a siloxane compound having —HSiRO— (wherein R is a hydrogen atom, a hydrocarbon group having 1 to 8 carbon atoms, an alkoxy group having 1 to 8 carbon atoms or a phenoxy group) and 0.0001 to 1 part by mass of at least one phenol compound of general formula (1) or (2) as a stabilizer. wherein a and b are each an integer of 0 to 4; m is 0 or 1; p and q are each 1 or 2; R1, R2, R3, and R4 are each an alkyl group having 1 to 4 carbon atoms; X1 and X2 each represent an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogen atom; Y is an alkanediyl group having 1 to 4 carbon atoms; and a plurality of R1s, R2s, R3s, R4s, X1s, X2s or Ys, where present per molecule, may be the same or different.
摘要翻译：包含100质量份具有-HSiRO-（其中R是氢原子，具有1至8个碳原子的烃基，具有1至8个碳原子的烷氧基或苯氧基）的硅氧烷化合物和0.0001至 1质量份的至少一种通式（1）或（2）的酚化合物作为稳定剂。其中a和b各自为0至4的整数; m为0或1; p和q各自为1或2; R 1，R 2，R 3和R 4各自为具有1至4个碳原子的烷基原子 X 1和X 2各自表示具有1至4个碳原子的烷基，具有1至4个碳原子的烷氧基或卤素原子; Y为碳原子数为1〜4的烷二基; 和多个R 1，R 2，R 3，R 4，X 4，每个分子存在的，可以相同或不同。

7. 发明授权

US07737291B2 Composition containing siloxane compound and phenol compound 有权
标题翻译：含有硅氧烷化合物和酚化合物的组合物
公开(公告)号：US07737291B2
公开(公告)日：2010-06-15
申请号：US11597036
申请日：2005-12-21
申请人： Kunio Osasawara , Kazuhisa Onozawa , Hiroki Sato , Takashi Higashino
发明人： Kunio Osasawara , Kazuhisa Onozawa , Hiroki Sato , Takashi Higashino
IPC分类号： C23C16/42 , C07F7/21
CPC分类号： C23C16/401 , C07F7/21 , C09D4/00 , C08G77/04
摘要： A composition containing 100 parts by mass of a siloxane compound having —HSiRO— (wherein R is a hydrogen atom, a hydrocarbon group having 1 to 8 carbon atoms, an alkoxy group having 1 to 8 carbon atoms or a phenoxy group) and 0.0001 to 1 part by mass of at least one phenol compound of general formula (1) or (2) as a stabilizer. wherein a and b are each an integer of 0 to 4; m is 0 or 1; p and q are each 1 or 2; R1, R2, R3, and R4 are each an alkyl group having 1 to 4 carbon atoms; X1 and X2 each represent an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms or a halogen atom; Y is an alkanediyl group having 1 to 4 carbon atoms; and a plurality of R1s, R2s, R3s, R4s, X1s, X2s or Ys, where present per molecule, may be the same or different.
摘要翻译：包含100质量份具有-HSiRO-（其中R是氢原子，具有1至8个碳原子的烃基，具有1至8个碳原子的烷氧基或苯氧基）的硅氧烷化合物和0.0001至 1质量份的至少一种通式（1）或（2）的酚化合物作为稳定剂。其中a和b各自为0至4的整数; m为0或1; p和q各自为1或2; R 1，R 2，R 3和R 4各自为具有1至4个碳原子的烷基; X1和X2各自表示具有1至4个碳原子的烷基，具有1至4个碳原子的烷氧基或卤素原子; Y为碳原子数为1〜4的烷二基; 并且每个分子存在的多个R 1，R 2，R 3，R 4，X 1，X 2或Y可以相同或不同。

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