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1. 发明授权

US6072164A Heat-treating method and radiant heating device 失效
标题翻译：热处理方法和辐射加热装置
公开(公告)号：US6072164A
公开(公告)日：2000-06-06
申请号：US142646
申请日：1998-09-11
申请人： Naoto Tate , Tomoyuki Sakai , Naohisa Toda , Hitoshi Habuka
发明人： Naoto Tate , Tomoyuki Sakai , Naohisa Toda , Hitoshi Habuka
IPC分类号： G01K13/00 , C30B29/06 , C30B31/18 , G01J5/00 , G01J5/02 , H01L21/00 , H01L21/205 , H01L21/22 , H01L21/26 , H01L21/265 , H01L21/324 , H01L21/66 , H05B1/02
CPC分类号： H01L21/67248 , C30B31/18 , H01L21/324 , H01L21/67115 , H01L22/26
摘要： There is provided a heat-treating method and a radiant heating device by which an object to be heat-treated can be heat-treated at an actually desired temperature regardless of the dopant concentration or resistivity of the object at the time of heat-treating the object with a radiant heating device using a radiation thermometer as a temperature detector. In the method, the object is heat-treated at an actually desired temperature by correcting the temperature of the object in accordance with the dopant concentration or resistivity of the object. In the apparatus, the dopant concentration or resistivity of the object is inputted in advance to a temperature controller and the controller calculates an actual temperature of the object by correcting and computing the temperature of the object detected with the radiation thermometer in accordance with the dopant concentration or resistivity of the object and controls the temperature of the object based on the calculated temperature value.
摘要翻译： PCT No.PCT / JP97 / 00734 Sec。 371日期：1998年9月11日 102（e）1998年9月11日PCT PCT 1997年3月10日PCT公布。第WO97 / 34318号公报日期1997年9月18日提供了一种热处理方法和辐射加热装置，通过该装置，可以在实际期望的温度下对待热处理的物体进行热处理，而不管当时物体的掺杂剂浓度或电阻率如何使用辐射温度计作为温度检测器的辐射加热装置对物体进行热处理。在该方法中，通过根据物体的掺杂剂浓度或电阻率校正物体的温度，在实际所需温度下对物体进行热处理。在该装置中，物体的掺杂剂浓度或电阻率预先输入到温度控制器，并且控制器通过根据掺杂剂浓度校正和计算用辐射温度计检测的物体的温度来计算物体的实际温度或电阻率，并根据计算出的温度值控制物体的温度。

2. 发明授权

US5938840A Method for vapor phase growth 失效
标题翻译：气相生长方法
公开(公告)号：US5938840A
公开(公告)日：1999-08-17
申请号：US036780
申请日：1998-03-09
申请人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
发明人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C30B25/14 , C30B23/03
CPC分类号： C23C16/45506 , C23C16/455 , C30B25/14 , Y10T117/10
摘要： In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.
摘要翻译：通过使用水平型气相生长装置在半导体晶体基板的表面上形成薄膜，可以通过调整原料气体的浓度分布来适当地获得薄膜的厚度和电阻率的分布在反应容器的宽度方向上的混合气体的基板表面上。在反应容器中，从靠近基板的输送口的位置供给载气，从由载气流动引起的涡流产生区域的下游侧的位置供给原料气体。

3. 发明授权

US5755878A Method for vapor phase growth 失效
公开(公告)号：US5755878A
公开(公告)日：1998-05-26
申请号：US546867
申请日：1995-10-23
申请人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
发明人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C30B25/14 , C30B23/03
CPC分类号： C23C16/45506 , C23C16/455 , C30B25/14 , Y10T117/10
摘要： In the formation of a thin film on the surface of a semiconductor crystal substrate by using a horizontal type vapor phase growth apparatus, the distribution of the thickness and resistivity of the thin film can be properly obtained by adjusting the concentration distribution of the raw material gas in the mixture gas in the width direction of the reaction vessel over the substrate surface. And in the reaction vessel, carrier gas is supplied from the position close to the transfer port of the substrate, and raw material gas is supplied from the position located in the downstream side of a vortex generation region caused by the flow of the carrier gas.

4. 发明授权

US6048793A Method and apparatus for thin film growth 失效
标题翻译：用于薄膜生长的方法和装置
公开(公告)号：US6048793A
公开(公告)日：2000-04-11
申请号：US546868
申请日：1995-10-23
申请人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
发明人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
IPC分类号： C23C16/24 , C23C16/02 , C23C16/44 , C23C16/455 , C23C16/48 , C30B25/10 , H01L21/205 , C23C16/01
CPC分类号： C23C16/481 , C23C16/0209 , C23C16/0236 , C23C16/4401 , C30B25/10
摘要： In a method and an appratus for a thin film growth on a semiconductor crystal substrate, impurities and contaminants absorbed on the inside wall of the reaction vessel are very harmful because these impurities and contaminants will deteriorate the quality of the thin film. A method and an apparatus by which the quantity of these impurities and contaminants absorbed on the inside wall of the reaction vessel can be restrained and removed easily are disclosed in this invention, wherein a semiconductor crystal substrate is mounted in the reaction vessel, and the wall of the reation vessel is cooled forcibly by a coolant while the substrate is under heating procedure to grow a thin film on the substrate by supplying the raw material gas into the reaction vessel. And the temperature of the wall of the reaction vessel during the procedure except the thin film growth is kept higher temperature than the temprature of the wall of the reaction vessel during the thin film growth procedure.
摘要翻译：在半导体晶体基板上的薄膜生长的方法和设备中，吸收在反应容器的内壁上的杂质和污染物是非常有害的，因为这些杂质和污染物将使薄膜的质量劣化。在本发明中公开了容易地抑制和去除反应容器的内壁上吸收的这些杂质和污染物的量的方法和装置，其中半导体晶体基板安装在反应容器中，壁的反应容器被冷却剂强制冷却，同时衬底处于加热过程中，以通过将原料气体供应到反应容器中而在衬底上生长薄膜。并且在薄膜生长过程中除了薄膜生长之外，反应容器的壁温度保持比反应容器壁温度高的温度。

5. 发明授权

US5749974A Method of chemical vapor deposition and reactor therefor 失效
标题翻译：化学气相沉积方法及其反应器
公开(公告)号：US5749974A
公开(公告)日：1998-05-12
申请号：US502042
申请日：1995-07-13
申请人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
发明人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
IPC分类号： C23C16/44 , C23C16/455 , C30B25/08 , C30B25/14 , H01L21/205 , C23C16/00
CPC分类号： C30B25/08 , C23C16/455 , C30B25/14
摘要： A reactor for chemical vapor deposition which is capable of producing semiconductor crystalline thin films having small transition widths. The reactor includes a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas outlet at the other end and a semiconductor substrate support which supports a semiconductor substrate so that a main surface thereof is horizontal. A reactant gas is caused to flow horizontally through the reaction chamber to effect the growing of a crystalline thin film on the main surface of the semiconductor substrate. The semiconductor substrate is arranged within the reactor chamber within a distance W which is measured from a leading edge of the semiconductor substrate at a most upstream position along a direction toward the gas outlet where W indicates an internal width of the reaction chamber. The semiconductor substrate is also in a location having a W/G ratio of 15 or greater, where G represents a distance between the main surface of the semiconductor substrate and a ceiling of the reaction chamber.
摘要翻译：一种用于化学气相沉积的反应器，其能够产生具有小转变宽度的半导体晶体薄膜。该反应器包括：冷壁式反应室，其在一端装有气体入口，另一端装有气体出口;以及半导体衬底支撑件，其支撑半导体衬底以使其主表面是水平的。使反应气体水平地流过反应室，以在半导体衬底的主表面上生长晶体薄膜。将半导体衬底布置在反应器室内的距离W内，该距离W是沿着朝向气体出口的方向的最上游位置从半导体衬底的前缘测量的，其中W表示反应室的内部宽度。半导体衬底也处于W / G比为15或更大的位置，其中G表示半导体衬底的主表面和反应室的顶部之间的距离。

6. 发明授权

US06254933B1 Method of chemical vapor deposition 有权
标题翻译：化学气相沉积方法
公开(公告)号：US06254933B1
公开(公告)日：2001-07-03
申请号：US09395848
申请日：1999-09-14
申请人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
发明人： Hitoshi Habuka , Masanori Mayuzumi , Naoto Tate , Masatake Katayama
IPC分类号： C23C1600
CPC分类号： C30B25/08 , C23C16/455 , C30B25/14
摘要： A method of performing chemical vapor deposition which produces semiconductor crystalline thin films having small transition widths. The method involves the use of a cold-wall type reaction chamber that is equipped with a gas inlet at one end and a gas outlet at the other end and a semiconductor substrate support which supports a semiconductor substrate so that a main surface thereof is horizontal. A reactant gas is caused to flow horizontally through the reaction chamber to effect the growing of a crystalline thin film on the main surface of the semiconductor substrate. The semiconductor substrate is arranged within the reactor chamber within a distance W which is measured from a leading edge of the semiconductor substrate at a most upstream position along a direction toward the gas outlet where W indicates an internal width of the reaction chamber. The semiconductor substrate is also in a location having a W/G ratio of 15 or greater, where G represents a distance between the main surface of the semiconductor substrate and a ceiling of the reaction chamber.
摘要翻译：一种进行化学气相沉积的方法，其产生具有小转变宽度的半导体晶体薄膜。该方法包括使用在一端配备气体入口和另一端的气体出口的冷壁式反应室，以及支撑半导体衬底以使其主表面为水平的半导体衬底支撑件。使反应气体水平地流过反应室，以在半导体衬底的主表面上生长晶体薄膜。将半导体衬底布置在反应器室内的距离W内，该距离W是沿着朝向气体出口的方向的最上游位置从半导体衬底的前缘测量的，其中W表示反应室的内部宽度。半导体衬底也处于W / G比为15或更大的位置，其中G表示半导体衬底的主表面和反应室的顶部之间的距离。

7. 发明授权

US5718762A Method for vapor-phase growth 失效
标题翻译：气相生长方法
公开(公告)号：US5718762A
公开(公告)日：1998-02-17
申请号：US607566
申请日：1996-02-27
申请人： Hitoshi Habuka , Naoto Tate , Masanori Mayuzumi , Hitoshi Tsunoda , Masatake Katayama
发明人： Hitoshi Habuka , Naoto Tate , Masanori Mayuzumi , Hitoshi Tsunoda , Masatake Katayama
IPC分类号： C30B29/06 , C23C16/02 , C30B25/02 , C30B33/12 , H01L21/205 , H01L21/302 , H01L21/3065 , C30B25/20
CPC分类号： C30B29/06 , C30B25/02
摘要： A method for vapor-phase growth which allows an epiwafer of a smooth surface free from microroughness to be produced is provided. This method comprises a step of heating up a silicon single crystal substrate in an ambience of an inert gas started at a temperature of less than 800.degree. C. and a step of removing a native oxide film formed on the surface of the silicon single crystal substrate by etching with hydrogen gas in an ambience of hydrogen gas at a temperature of not less than 950.degree. C. and not more than 1190.degree. C. prior to the vapor-phase growth.
摘要翻译：提供了一种气相生长方法，其允许产生没有微粗糙度的光滑表面的外延膜。该方法包括在低于800℃的温度下开始的惰性气体的氛围中加热硅单晶衬底的步骤，以及去除在硅单晶衬底的表面上形成的自然氧化膜的步骤在气相生长前，在不低于950℃，不高于1190℃的氢气气氛中用氢气蚀刻。

8. 发明授权

US07288418B2 Process for treating substrates for the microelectronics industry, and substrates obtained by this process 有权
标题翻译：用于处理微电子工业用基板的方法以及通过该方法获得的基板
公开(公告)号：US07288418B2
公开(公告)日：2007-10-30
申请号：US11348502
申请日：2006-02-07
申请人： Thierry Barge , André Auberton-Herve , Hiroji Aga , Naoto Tate
发明人： Thierry Barge , André Auberton-Herve , Hiroji Aga , Naoto Tate
IPC分类号： H01L21/302
CPC分类号： H01L21/3247 , H01L21/306 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： A process for treating substrates for the microelectronics or optoelectronics industry, wherein the substrates include on at least one of their faces a working layer in which components are intended to be formed. The process includes a step of annealing under a reductive atmosphere followed by a step of chemical-mechanical polishing on the free surface of the working layer.
摘要翻译：一种用于处理微电子学或光电子工业的衬底的方法，其中衬底在其至少一个面上包括要在其中形成部件的工作层。该方法包括在还原性气氛下进行退火，然后在工作层的自由表面上进行化学机械抛光的步骤。

9. 发明授权

US07029993B1 Method for treating substrates for microelectronics and substrates obtained according to said method 有权
标题翻译：用于处理根据所述方法获得的用于微电子学和衬底的衬底的方法
公开(公告)号：US07029993B1
公开(公告)日：2006-04-18
申请号：US10069058
申请日：2000-08-17
申请人： Thierry Barge , André Auberton-Herve , Hiroji Aga , Naoto Tate
发明人： Thierry Barge , André Auberton-Herve , Hiroji Aga , Naoto Tate
IPC分类号： H01L21/302
CPC分类号： H01L21/3247 , H01L21/306 , H01L21/30625 , H01L21/76251 , Y10S438/974
摘要： The invention relates to a method for treating substrates (50) for microelectronics or optoelectronics, whereby said substrates comprise a useful layer (52) on at least one of the surfaces thereof. The inventive method includes a mechanical/chemical polishing step occurring on a bare surface (54) of the useful layer and is characterized in that it also comprises a post-curing step in a reductive atmosphere (100) before said polishing step occurs.
摘要翻译：本发明涉及一种用于处理微电子学或光电子学的衬底（50）的方法，由此所述衬底在其至少一个表面上包括有用层（52）。本发明的方法包括在有用层的裸露表面（54）上发生的机械/化学抛光步骤，其特征在于它还包括在所述抛光步骤发生之前在还原性气氛（100）中的后固化步骤。

10. 发明授权

US06284629B1 Method of fabricating an SOI wafer and SOI wafer fabricated by the method 有权
标题翻译：通过该方法制造SOI晶片和SOI晶片的方法
公开(公告)号：US06284629B1
公开(公告)日：2001-09-04
申请号：US09343074
申请日：1999-06-29
申请人： Isao Yokokawa , Naoto Tate , Kiyoshi Mitani
发明人： Isao Yokokawa , Naoto Tate , Kiyoshi Mitani
IPC分类号： H01L2130
CPC分类号： H01L21/76251 , H01L21/76254 , Y10S156/942 , Y10S438/977 , Y10T156/1978
摘要： There is disclosed a method of fabricating an SOI wafer wherein an oxide film is formed on at least one of two single crystal silicon wafers; hydrogen ions or rare gas ions are implanted into the upper surface of one of the two silicon wafers in order to form an ion implanted layer; the ion-implanted surface is brought into close contact with the surface of the other silicon wafer via the oxide film; heat treatment is performed to separate a thin film from the silicon wafer with using the ion implanted layer as a delaminating plane to fabricate the SOI wafer having an SOI layer; and then an epitaxial layer is grown on the SOI layer to form a thick SOI layer. There is provided an SOI wafer which has a thick SOI layer with good thickness uniformity and good crystallinity and which is useful for a bipolar device or a power device.
摘要翻译：公开了一种制造SOI晶片的方法，其中氧化膜形成在两个单晶硅晶片中的至少一个上; 为了形成离子注入层，将氢离子或稀有气体离子注入到两个硅晶片之一的上表面中; 离子注入表面通过氧化膜与另一硅晶片的表面紧密接触; 使用离子注入层作为分层平面进行热处理以从硅晶片分离薄膜，以制造具有SOI层的SOI晶片; 然后在SOI层上生长外延层以形成厚的SOI层。提供了SOI晶片，该SOI晶片具有厚的均匀性和良好的结晶度的厚的SOI层，并且可用于双极器件或功率器件。

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