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1. 发明授权

US07221056B2 Semiconductor integrated circuit device and manufacturing method thereof 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US07221056B2
公开(公告)日：2007-05-22
申请号：US10871282
申请日：2004-06-21
申请人： Naoki Yamamoto , Akio Nishida , Akira Fujimoto , Hiraku Chakihara , Hideyuki Matsuoka , Toshiyuki Mine
发明人： Naoki Yamamoto , Akio Nishida , Akira Fujimoto , Hiraku Chakihara , Hideyuki Matsuoka , Toshiyuki Mine
IPC分类号： H01L23/495
CPC分类号： H01L21/02063 , H01L21/76843 , H01L21/76849 , H01L21/76867 , H01L21/76886 , H01L21/8221 , H01L27/0688 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing process for a semiconductor integrated circuit device prevents occurrence of reaction between metal wiring and a boron-doped silicon plug over it in heat treatment for a MOS transistor to be formed over them and reduces the possibility of rise in contact resistance. Metal boride is formed on an exposed metal surface in the bottom of an opening made in an interlayer insulating film over the metal wiring. In order to facilitate formation of such metal boride, metal oxide remaining on the metal surface is removed with an aqueous ammonia solution. The metal surface is irradiated with high energy ultraviolet light in order to remove organic matter remaining in the opening and facilitate removal of the metal oxide with the aqueous ammonia solution.
摘要翻译：半导体集成电路器件的制造工艺防止金属布线和硼掺杂的硅插件在其上形成的MOS晶体管的热处理中发生反应，并降低接触电阻上升的可能性。金属硼化物形成在金属布线上的位于层间绝缘膜的开口底部的露出的金属表面上。为了促进这种金属硼化物的形成，用氨水溶液除去残留在金属表面上的金属氧化物。金属表面用高能紫外线照射，以除去残留在开口中的有机物，并有助于氨水溶液除去金属氧化物。

2. 发明申请

US20050073051A1 Semiconductor integrated circuit device and manufacturing method thereof 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US20050073051A1
公开(公告)日：2005-04-07
申请号：US10871282
申请日：2004-06-21
申请人： Naoki Yamamoto , Akio Nishida , Akira Fujimoto , Hiraku Chakihara , Hideyuki Matsuoka , Toshiyuki Mine
发明人： Naoki Yamamoto , Akio Nishida , Akira Fujimoto , Hiraku Chakihara , Hideyuki Matsuoka , Toshiyuki Mine
IPC分类号： H01L21/768 , H01L21/02 , H01L21/28 , H01L21/336 , H01L21/822 , H01L21/8238 , H01L21/8242 , H01L27/00 , H01L27/06 , H01L27/08 , H01L27/092 , H01L29/78 , H01L29/786
CPC分类号： H01L21/02063 , H01L21/76843 , H01L21/76849 , H01L21/76867 , H01L21/76886 , H01L21/8221 , H01L27/0688 , H01L2924/0002 , H01L2924/00
摘要： A manufacturing process for a semiconductor integrated circuit device which prevents occurrence of reaction between metal wiring and a boron-doped silicon plug over it in heat treatment for a MOS transistor to be formed over them and reduces the possibility of rise in contact resistance. Metal boride is formed on an exposed metal surface in the bottom of an opening made in an interlayer insulating film over the metal wiring. In order to facilitate formation of such metal boride, metal oxide remaining on the metal surface is removed with an aqueous ammonia solution. The meal surface is irradiated with high energy ultraviolet light in order to remove organic matter remaining in the opening and facilitate removal of the metal oxide with the aqueous ammonia solution.
摘要翻译：一种用于半导体集成电路器件的制造方法，其防止金属布线和硼掺杂硅插塞之间在其上形成的MOS晶体管的热处理中发生反应，并降低接触电阻上升的可能性。金属硼化物形成在金属布线上的位于层间绝缘膜的开口底部的露出的金属表面上。为了促进这种金属硼化物的形成，用氨水溶液除去残留在金属表面上的金属氧化物。用高能量紫外线照射餐面，以除去残留在开口中的有机物质，并利用氨水溶液去除金属氧化物。

3. 发明授权

US09324914B2 Semiconductor light-emitting device and process for production thereof 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US09324914B2
公开(公告)日：2016-04-26
申请号：US12712693
申请日：2010-02-25
申请人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa
发明人： Akira Fujimoto , Ryota Kitagawa , Koji Asakawa
IPC分类号： H01L33/00 , H01L33/38 , H01L33/40
CPC分类号： H01L33/38 , H01L33/40 , H01L2933/0083
摘要： A semiconductor light-emitting device capable of keeping high luminance intensity even if electric power increases, and suitable for lighting instruments such as lights and lamps. The semiconductor device includes a metal electrode layer provided with openings, and is so large in size that the electrode layer has, for example, an area of 1 mm2 or more. The openings have a mean diameter of 10 nm to 2 μm, and penetrate through the metal electrode layer. The metal electrode layer can be produced by use of self-assembling of block copolymer or by nano-imprinting techniques.
摘要翻译：即使电力增加也能够保持高亮度强度的半导体发光装置，适用于灯具等照明装置。半导体器件包括设置有开口的金属电极层，其尺寸如此大，使得电极层具有例如1mm 2以上的面积。开口的平均直径为10nm〜2μm，贯穿金属电极层。金属电极层可以通过使用嵌段共聚物的自组装或通过纳米压印技术来制备。

4. 发明授权

US08921887B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08921887B2
公开(公告)日：2014-12-30
申请号：US13221319
申请日：2011-08-30
申请人： Kumi Masunaga , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
发明人： Kumi Masunaga , Ryota Kitagawa , Akira Fujimoto , Koji Asakawa , Takanobu Kamakura , Shinji Nunotani
IPC分类号： H01L33/62 , H01L33/38
CPC分类号： H01L33/405 , H01L33/38 , H01L2933/0016 , H01L2933/0083
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.
摘要翻译：根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分沿着从第一半导体层到第二半导体层的方向。多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒金属部分。

5. 发明申请

US20120150012A1 ACOUSTIC WAVE MEASURING APPARATUS 审中-公开
标题翻译：声波测量装置
公开(公告)号：US20120150012A1
公开(公告)日：2012-06-14
申请号：US13391687
申请日：2010-11-05
申请人： Akira Fujimoto , Toshinobu Tokita
发明人： Akira Fujimoto , Toshinobu Tokita
IPC分类号： A61B6/00
CPC分类号： A61B5/0095 , A61B8/0825 , A61B8/406 , A61B8/4209 , A61B8/4236 , A61B8/4281 , A61B8/4455 , A61B8/4483 , A61B2562/168
摘要： An acoustic wave measuring apparatus includes a plate pressed against a subject, a probe that has an acoustic wave conversion unit for receiving an acoustic wave emitted from the subject through the plate to convert into an electric signal, a seal member provided on the probe so as to enclose a periphery of the acoustic wave conversion unit for forming a space to hold lubricant between the plate and the acoustic wave conversion unit, a providing unit that provides the lubricant into the space formed by the seal member and a lubricant monitoring unit that detects whether the space is filled with the lubricant.
摘要翻译：声波测量装置包括被压靠在被摄体上的板，具有声波转换单元的探针，该声波转换单元用于接收通过该板发射的对象的声波以转换成电信号;设置在探针上的密封构件，围绕声波转换单元的周边以形成用于在板和声波转换单元之间保持润滑剂的空间的提供单元，其将润滑剂提供到由密封构件形成的空间中，以及润滑剂监测单元，其检测是否空间充满润滑剂。

6. 发明申请

US20120132948A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120132948A1
公开(公告)日：2012-05-31
申请号：US13229972
申请日：2011-09-12
申请人： Shinji Nunotani , Masaaki Ogawa , Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Takanobu Kamakura
发明人： Shinji Nunotani , Masaaki Ogawa , Koji Asakawa , Ryota Kitagawa , Akira Fujimoto , Takanobu Kamakura
IPC分类号： H01L33/36
CPC分类号： H01L33/38 , H01L2933/0016
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction.
摘要翻译：根据一个实施例，半导体发光器件包括光发射器，第一和第二电极层，焊盘电极和辅助电极部分。发射极包括设置在发射极一侧的第一半导体层，设置在发射极的另一侧的第二半导体层以及设置在第一和第二半导体层之间的发光层。第一电极层设置在第二半导体层的与第一半导体层相反的一侧上，并且包括金属层和贯穿金属层的多个孔。第二电极层与第一半导体层电连接。焊盘电极与第一电极层电连接。辅助电极部分与第一电极层电连续并沿与第一方向正交的第二方向延伸。

7. 发明申请

US20120056155A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20120056155A1
公开(公告)日：2012-03-08
申请号：US13037990
申请日：2011-03-01
申请人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
发明人： Koji Asakawa , Akira Fujimoto , Ryota Kitagawa , Takanobu Kamakura , Shinji Nunotani , Eishi Tsutsumi , Masaaki Ogawa
IPC分类号： H01L33/06 , H01L33/38 , B82Y99/00 , B82Y40/00
CPC分类号： H01L33/38 , H01L33/405 , H01L2933/0016
摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.
摘要翻译：半导体发光器件包括结构体，第一电极层和第二电极层。结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一半导体层和第二半导体层之间的发光层。第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。多个第一开口部分的圆当量直径不小于10纳米且不超过1微米。至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。

8. 发明申请

US20110220936A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHTING INSTRUMENT EMPLOYING THE SAME AND PROCESS FOR PRODUCTION OF THE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件，使用其的照明器具和用于生产半导体发光器件的工艺
公开(公告)号：US20110220936A1
公开(公告)日：2011-09-15
申请号：US12876318
申请日：2010-09-07
申请人： Akira Fujimoto , Ryota Kitagawa , Eishi Tsutsumi , Koji Asakawa
发明人： Akira Fujimoto , Ryota Kitagawa , Eishi Tsutsumi , Koji Asakawa
IPC分类号： H01L33/40 , H01L21/283
CPC分类号： H01L33/58 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/44
摘要： A semiconductor light-emitting device according to the embodiment includes a substrate, a compound semiconductor layer, a metal electrode layer provided with particular openings, a light-extraction layer, and a counter electrode. The light-extraction layer has a thickness of 20 to 120 nm and covers at least partly the metal part of the metal electrode layer; or otherwise the light-extraction layer has a rugged structure and covers at least partly the metal part of the metal electrode layer. The rugged structure has projections so arranged that their summits are positioned at intervals of 100 to 600 nm, and the heights of the summits from the surface of the metal electrode layer are 200 to 700 nm.
摘要翻译：根据实施例的半导体发光器件包括衬底，化合物半导体层，设置有特定开口的金属电极层，光提取层和对电极。光提取层的厚度为20〜120nm，至少部分覆盖金属电极层的金属部分。否则光提取层具有坚固的结构并且至少部分地覆盖金属电极层的金属部分。凹凸结构具有突出部，使得它们的顶点以100至600nm的间隔定位，并且来自金属电极层的表面的顶点的高度为200至700nm。

9. 发明授权

US07928353B2 Displaying device and lighting device employing organic electroluminescence element 有权
标题翻译：使用有机电致发光元件的显示装置和照明装置
公开(公告)号：US07928353B2
公开(公告)日：2011-04-19
申请号：US12392691
申请日：2009-02-25
申请人： Akira Fujimoto , Koji Asakawa , Tsutomu Nakanishi , Eishi Tsutsumi , Ryota Kitagawa
发明人： Akira Fujimoto , Koji Asakawa , Tsutomu Nakanishi , Eishi Tsutsumi , Ryota Kitagawa
IPC分类号： H01J1/46
CPC分类号： H01L51/5203 , H01L51/5234 , H01L2251/5315
摘要： The Present invention provides an organic EL display and a lighting device having high efficiency. The organic EL display comprises a substrate, a pixel-driving circuit unit, and pixels arranged in the form of a matrix on the substrate. The pixel comprises a light-emitting part, and the light-emitting part is composed of a first electrode placed near to the substrate, a second electrode placed far from the substrate, and at least one organic layer placed between the first and second electrodes. The second electrode has a metal electrode layer having a thickness of 10 nm to 200 nm, and the metal electrode layer comprises a metal part and plural openings penetrating through the layer. The metal part is seamless and formed of metal continuously connected without breaks between any points therein. The openings have an average opening diameter of 10 nm to 780 nm, and are arranged so periodically that the distribution of the arrangement is represented by a radial distribution function curve having a half-width of 5 nm to 300 nm.
摘要翻译：本发明提供一种高效率的有机EL显示器和照明装置。有机EL显示器包括基板，像素驱动电路单元和在基板上以矩阵形式布置的像素。像素包括发光部分，并且发光部分由放置在基板附近的第一电极，远离基板的第二电极和放置在第一和第二电极之间的至少一个有机层组成。第二电极具有厚度为10nm至200nm的金属电极层，并且金属电极层包括金属部分和贯穿该层的多个开口。金属部件是无缝的，并且由连续连接的金属形成，其中任何点之间没有断裂。开口的平均开口直径为10nm〜780nm，并且周期性地布置，使得布置的分布由半宽度为5nm至300nm的径向分布函数曲线表示。

10. 发明授权

US07759861B2 Organic EL display 失效
标题翻译：有机EL显示屏
公开(公告)号：US07759861B2
公开(公告)日：2010-07-20
申请号：US11234189
申请日：2005-09-26
申请人： Akira Fujimoto , Koji Asakawa , Tsutomu Nakanishi
发明人： Akira Fujimoto , Koji Asakawa , Tsutomu Nakanishi
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L51/5262 , H01L27/3211
摘要： In an organic EL display provided with a transparent substrate, a buffer layer provided on the transparent substrate, and an organic EL element provided on the buffer layer, the buffer layer is formed of a material having the same refractive index as the transparent electrode of the EL element, and has a two-dimensional concavo-convex structure having two pattern periods.
摘要翻译：在设置有透明基板的有机EL显示器中，设置在透明基板上的缓冲层和设置在缓冲层上的有机EL元件，缓冲层由具有与透明基板的透明电极相同的折射率的材料形成 EL元件，并且具有具有两个图案周期的二维凹凸结构。

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