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1. 发明授权

US06947463B2 Semiconductor laser device for use in a laser module 有权
标题翻译：用于激光模块的半导体激光器件
公开(公告)号：US06947463B2
公开(公告)日：2005-09-20
申请号：US09832885
申请日：2001-04-12
申请人： Naoki Tsukiji , Junji Yoshida , Masaki Funabashi
发明人： Naoki Tsukiji , Junji Yoshida , Masaki Funabashi
IPC分类号： H01S3/094 , H01S3/30 , H01S5/024 , H01S5/12 , H01S5/227 , H01S5/10
CPC分类号： H01S5/227 , H01S3/094003 , H01S3/302 , H01S5/02415 , H01S5/02438 , H01S5/0287 , H01S5/1212 , H01S5/1215 , H01S5/1225
摘要： A semiconductor laser device, module, and method for providing light suitable for providing an excitation light source for a Raman amplifier. The semiconductor laser device includes an active layer configured to radiate light, a spacer layer in contact with the active layer and a diffraction grating formed within the spacer layer, and configured to emit a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. A plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum is provided by changing a wavelength interval between the longitudinal modes and/or widening the predetermined spectral width of the oscillation wavelength spectrum. The wavelength interval is set by the length of a resonator cavity within the semiconductor laser device, while the predetermined spectral width of the oscillation wavelength spectrum is set by either shortening the diffraction grating or varying a pitch of the grating elements within the diffraction grating.
摘要翻译：一种用于提供适合于为拉曼放大器提供激发光源的光的半导体激光器件，模块和方法。半导体激光器件包括被配置为辐射光的有源层，与有源层接触的间隔层和形成在间隔层内的衍射光栅，并且被配置为发射具有预定光谱宽度内的多个纵向模的光束的半导体器件的振荡波长谱。通过改变纵向模式之间的波长间隔和/或加宽振荡波长光谱的预定光谱宽度来提供振荡波长谱的预定光谱宽度内的多个纵向模式。波长间隔由半导体激光器件内的谐振器腔的长度设定，而通过缩短衍射光栅或改变衍射光栅内的光栅元件的间距来设定振荡波长光谱的预定光谱宽度。

2. 发明授权

US06782028B2 Semiconductor laser device for use in a semiconductor laser module and an optical amplifier 有权
标题翻译：用于半导体激光器模块和光放大器的半导体激光器件
公开(公告)号：US06782028B2
公开(公告)日：2004-08-24
申请号：US10015656
申请日：2001-12-17
申请人： Naoki Tsukiji , Junji Yoshida , Masaki Funabashi , Toshio Kimura , Takeshi Aikiyo , Takeo Shimizu , Toshiro Yamamoto , Tomoaki Toratani , Hiroshi Matsuura , Mieko Konishi , Masashi Nakae
发明人： Naoki Tsukiji , Junji Yoshida , Masaki Funabashi , Toshio Kimura , Takeshi Aikiyo , Takeo Shimizu , Toshiro Yamamoto , Tomoaki Toratani , Hiroshi Matsuura , Mieko Konishi , Masashi Nakae
IPC分类号： H01S500
CPC分类号： G02B6/4218 , B82Y20/00 , G02B6/4206 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S3/302 , H01S5/005 , H01S5/02208 , H01S5/02248 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1039 , H01S5/1085 , H01S5/1092 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/125 , H01S5/146 , H01S5/22 , H01S5/227 , H01S5/3215 , H01S5/3409 , H01S5/4012 , H01S5/4062 , H01S5/4087
摘要： A single semiconductor laser device used in a semiconductor laser module of an optical amplifier and having a first light emitting stripe with a diffraction grating and at least one other light emitting stripe with a diffraction grating and which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface.
摘要翻译：一种用于光放大器的半导体激光器模块中的单个半导体激光器件，其具有带有衍射光栅的第一发光条纹和至少一个具有衍射光栅的其它发光条纹，并分别对准发射第一激光束和至少一个其他激光束通过一个边缘表面。

3. 发明授权

US06680960B2 Semiconductor laser device having a diffraction grating on a light emission side 有权
$Semiconductor laser device having a diffraction grating on a light emission side$
标题翻译：在发光侧具有衍射光栅的半导体激光装置
公开(公告)号：US06680960B2
公开(公告)日：2004-01-20
申请号：US09983249
申请日：2001-10-23
申请人： Junji Yoshida , Naoki Tsukiji , Masaki Funabashi
发明人： Junji Yoshida , Naoki Tsukiji , Masaki Funabashi
IPC分类号： H01S500
CPC分类号： H01S5/125 , H01S3/094003 , H01S3/09415 , H01S5/1021 , H01S5/1039 , H01S5/1096 , H01S5/1212 , H01S5/1215 , H01S5/1231 , H01S5/141 , H01S5/146
摘要： A semiconductor device and method for providing a light source suitable for use as a pumping light source in a Raman amplification system are provided. The device upon which the method is based includes an active layer configured to radiate light; a light reflecting facet positioned on a first side of the active layer; a light emitting facet positioned on a second side of the active layer thereby forming a resonant cavity between the light reflecting facet and the light emitting facet; and a partial diffraction grating having a predetermined length and positioned on a light emission side of the resonator. The predetermined length of the partial diffraction grating is selected such that the semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. The predetermined length of the partial diffraction grating may be set in relation to a length of the resonant cavity, or in relation to a coupling coefficient &kgr;i of the partial diffraction grating.
摘要翻译：提供了一种用于提供适合用作拉曼放大系统中的泵浦光源的光源的半导体器件和方法。该方法所基于的装置包括被配置为辐射光的有源层; 位于有源层的第一侧上的光反射面; 位于有源层的第二侧上的发光小面，从而在光反射小面和发光小面之间形成谐振腔; 以及具有预定长度并位于谐振器的发光侧的部分衍射光栅。选择部分衍射光栅的预定长度，使得半导体器件发射在半导体器件的振荡波长谱的预定光谱宽度内具有多个纵向模的光束。部分衍射光栅的预定长度可以相对于谐振腔的长度设置，或者相对于部分衍射光栅的耦合系数kappai来设定。

4. 发明授权

US06614823B2 Semiconductor laser device having a diffraction grating on a light reflection side 有权
$Semiconductor laser device having a diffraction grating on a light reflection side$
公开(公告)号：US06614823B2
公开(公告)日：2003-09-02
申请号：US09983175
申请日：2001-10-23
申请人： Masaki Funabashi , Naoki Tsukiji , Junji Yoshida
发明人： Masaki Funabashi , Naoki Tsukiji , Junji Yoshida
IPC分类号： H01S500
CPC分类号： H01S5/125 , H01S3/094003 , H01S3/09415 , H01S5/1021 , H01S5/1039 , H01S5/141 , H01S5/146
摘要： A semiconductor device includes an active layer configured to radiate light, a light reflecting facet positioned on a first side of the active layer, a light emitting facet positioned on a second side of the active layer thereby forming a resonant cavity between the light reflecting facet and the light emitting facet, and a partial diffraction grating having a predetermined length and positioned on a light reflecting side of the resonator. The predetermined length of the partial diffraction grating is selected such that the semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. The predetermined length of the partial diffraction grating may be set in relation to a length of the resonant cavity, or in relation to a coupling coefficient of the diffraction grating. The semiconductor device may also include another partial diffraction grating positioned on the light emitting side of the laser device.

5. 发明授权

US06765935B2 Semiconductor laser module, manufacturing method thereof and optical amplifier 有权
标题翻译：半导体激光器模块及其制造方法和光放大器
公开(公告)号：US06765935B2
公开(公告)日：2004-07-20
申请号：US10015654
申请日：2001-12-17
申请人： Toshio Kimura , Masashi Nakae , Takeo Shimizu , Naoki Tsukiji , Junji Yoshida , Masaki Funabashi , Takeshi Aikiyo , Toshiro Yamamoto , Tomoaki Toratani , Hiroshi Matsuura , Mieko Konishi
发明人： Toshio Kimura , Masashi Nakae , Takeo Shimizu , Naoki Tsukiji , Junji Yoshida , Masaki Funabashi , Takeshi Aikiyo , Toshiro Yamamoto , Tomoaki Toratani , Hiroshi Matsuura , Mieko Konishi
IPC分类号： A01S313
CPC分类号： H01S5/02248 , G02B6/4206 , G02B6/4218 , H01S3/094003 , H01S3/094073 , H01S3/094096 , H01S3/09415 , H01S5/02284 , H01S5/02415 , H01S5/02438 , H01S5/1203 , H01S5/1212 , H01S5/1215 , H01S5/146 , H01S5/4012 , H01S5/4062 , H01S5/4068 , H01S5/4087
摘要： A semiconductor laser module includes a single semiconductor laser device having a first light emitting stripe and at least one other light emitting stripe which are aligned to respectively emit a first laser beam and at least one other laser beam through one edge surface. It also includes a first lens positioned so that the first laser beam and the at least one other laser beam emitted from the semiconductor laser device are incident thereon, the first lens configured to separate the first laser beam and the at least one other laser beam. A beam synthesizing member is included and has a first input part on which the first laser beam is incident, at least one other input part on which the at least one other laser beam is incident, and an output part from which the first laser beam emerging from the first input part and the at least one other laser beam emerging from the at least one other input part are multiplexed and emitted as a multiplexed laser beam. An optical fiber is positioned to receive the multiplexed laser beam therein.
摘要翻译：半导体激光器模块包括具有第一发光条纹和至少一个其它发光条纹的单个半导体激光器装置，其被对准以分别发射第一激光束和至少一个其它激光束通过一个边缘表面。它还包括第一透镜，其定位成使得第一激光束和从半导体激光器件发射的至少一个其它激光束入射到其上，第一透镜被配置为分离第一激光束和至少一个其它激光束。包括光束合成部件，并且具有第一激光束入射的第一输入部，入射有至少一个其他激光束的至少一个其他输入部，以及第一激光束从其出射的输出部从所述第一输入部分和从所述至少一个其他输入部分出射的所述至少一个其它激光束被多路复用并作为多路复用激光束发射。光纤被定位成在其中接收复用的激光束。

6. 发明申请

US20100245987A1 SEMICONDUCTOR OPTICAL AMPLIFIER 失效
标题翻译：半导体光放大器
公开(公告)号：US20100245987A1
公开(公告)日：2010-09-30
申请号：US12708043
申请日：2010-02-18
申请人： Hideaki Hasegawa , Masaki Funabashi , Noriyuki Yokouchi , Junji Yoshida
发明人： Hideaki Hasegawa , Masaki Funabashi , Noriyuki Yokouchi , Junji Yoshida
IPC分类号： H01S3/063 , H01S3/094
CPC分类号： H01S5/50 , H01S5/028 , H01S5/1032 , H01S5/3211 , H01S2304/04
摘要： It is desirable to provide a semiconductor optical amplifier from which it becomes able to obtain a higher output power. A semiconductor optical amplifier in comprises an active wave guiding layer which comprises a passive core region that is formed of a semiconductor, and active cladding regions that are located at both sides of the passive core region and each of that is comprised of an active layer which is formed of a semiconductor and which has an index of refraction to be lower than that of the passive core region, wherein a light is wave guided with being amplified in the active wave guiding layer. Moreover, it is desirable for the active wave guiding layer to be formed of a compound semiconductor, and to be formed by integrating the passive core region and the active cladding regions to be monolithic on to a substrate that is formed of a compound semiconductor by making use of a process of a butt joint growth.
摘要翻译：期望提供一种能够获得更高输出功率的半导体光放大器。一种半导体光放大器，包括有源波导层，该有源波导层包括由半导体形成的被动核心区域和位于被动核心区域两侧的有源包层区域，其中每一个包括有源层，由半导体形成，其折射率低于无源芯区域的折射率，其中光在有源波导层中被放大而被波导。此外，期望有源波导层由化合物半导体形成，并且通过将被动核区域和有源包层区域整体地组合到由化合物半导体形成的基板上而形成使用对接联合成长过程。

7. 发明授权

US08547631B2 Semiconductor optical amplifier 失效
标题翻译：半导体光放大器
公开(公告)号：US08547631B2
公开(公告)日：2013-10-01
申请号：US12708043
申请日：2010-02-18
申请人： Hideaki Hasegawa , Masaki Funabashi , Noriyuki Yokouchi , Junji Yoshida
发明人： Hideaki Hasegawa , Masaki Funabashi , Noriyuki Yokouchi , Junji Yoshida
IPC分类号： H01S5/50 , H01S5/20
CPC分类号： H01S5/50 , H01S5/028 , H01S5/1032 , H01S5/3211 , H01S2304/04
摘要： It is desirable to provide a semiconductor optical amplifier from which it becomes able to obtain a higher output power. A semiconductor optical amplifier in comprises an active wave guiding layer which comprises a passive core region that is formed of a semiconductor, and active cladding regions that are located at both sides of the passive core region and each of that is comprised of an active layer which is formed of a semiconductor and which has an index of refraction to be lower than that of the passive core region, wherein a light is wave guided with being amplified in the active wave guiding layer. Moreover, it is desirable for the active wave guiding layer to be formed of a compound semiconductor, and to be formed by integrating the passive core region and the active cladding regions to be monolithic on to a substrate that is formed of a compound semiconductor by making use of a process of a butt joint growth.
摘要翻译：期望提供一种能够获得更高输出功率的半导体光放大器。一种半导体光放大器，包括有源波导层，该有源波导层包括由半导体形成的被动核心区域和位于被动核心区域两侧的有源包层区域，其中每一个包括有源层，由半导体形成，其折射率低于无源芯区域的折射率，其中光在有源波导层中被放大而被波导。此外，期望有源波导层由化合物半导体形成，并且通过将被动核区域和有源包层区域整体地组合到由化合物半导体形成的基板上而形成使用对接联合成长过程。

8. 发明授权

US06643315B2 Distributed feedback semiconductor laser device and multi-wavelength laser array 有权
标题翻译：分布式反馈半导体激光器件和多波长激光器阵列
公开(公告)号：US06643315B2
公开(公告)日：2003-11-04
申请号：US09769395
申请日：2001-01-26
申请人： Akihiko Kasukawa , Norihiro Iwai , Masaki Funabashi
发明人： Akihiko Kasukawa , Norihiro Iwai , Masaki Funabashi
IPC分类号： H01S319
CPC分类号： H01S5/12 , H01S5/2215 , H01S5/222 , H01S5/4031 , H01S5/4087
摘要： A distributed feedback semiconductor laser device including an active layer, a diffraction grating disposed in a vicinity of the active layer and having a substantially uniform space period and a distributed feedback function, and a functional layer disposed in a vicinity of the diffraction grating and the active layer and having a function of controlling a refractive index of the active layer, whereby the functional layer controls a lasing wavelength of the active layer. The functional layer of controlling the refractive index of the distributed feedback semiconductor laser device can generate a plurality of the lasing wavelengths different among one another and easily controllable.
摘要翻译：一种分布式反馈半导体激光器件，包括有源层，设置在有源层附近并具有基本均匀的空间周期和分布反馈功能的衍射光栅，以及设置在衍射光栅和活性物体附近的功能层并且具有控制有源层的折射率的功能，由此功能层控制有源层的激光波长。控制分布式反馈半导体激光器件的折射率的功能层可以产生彼此不同的并且容易控制的多个激光波长。

9. 发明授权

US08149891B2 Semiconductor device and optical module 有权
标题翻译：半导体器件和光模块
公开(公告)号：US08149891B2
公开(公告)日：2012-04-03
申请号：US12620267
申请日：2009-11-17
申请人： Masaki Funabashi
发明人： Masaki Funabashi
IPC分类号： H01S5/00
CPC分类号： H01S5/50 , G02B6/42 , G02B2006/12119 , G02B2006/12152 , H01S5/0202 , H01S5/10 , H01S5/101 , H01S5/1014 , H01S5/1085 , H01S5/227 , H01S5/4031 , H01S2301/176
摘要： A semiconductor laser element 10 according to the present invention comprises a waveguide 12 of a high mesa type. And then such the waveguide 12 comprises an oblique end face 17 as an emitting facet that is different from a cleaved end face 16. And hence it becomes possible to reduce a reflection factor at the end face by making of such the oblique end face 17, and it becomes possible to design a direction of an emitting beam 21, that is to be emitting from the oblique end face 17, to be independent of that for the cleaved end face 16 as well. Moreover, the emitting beam 21 is designed to be emitting as vertical to the cleaved end face 16. And then therefore in a case where an emitting beam from a semiconductor optical device is designed to be coupled with such as an optical fiber or another waveguide or the like, it is not necessary to device such as that the semiconductor laser element 10 is required to be arranged at a sub mount by being inclined to be oblique or the like.
摘要翻译：根据本发明的半导体激光元件10包括高台面型的波导管12。然后，这样的波导12包括作为与切割端面16不同的发光面的倾斜端面17.因此，可以通过制造这样的倾斜端面17来降低端面处的反射系数，并且可以将从倾斜端面17发射的发射光束21的方向设计成与切割端面16的方向无关。此外，发射光束21被设计成垂直于切割的端面16发射。因此，在来自半导体光学器件的发射光束被设计为与诸如光纤或另一个波导耦合的情况下，不需要将半导体激光元件10通过倾斜倾斜等设置在副安装台上的装置。

10. 发明授权

US07453100B2 DFB laser assembly and laser module 有权
标题翻译： DFB激光组件和激光模块
公开(公告)号：US07453100B2
公开(公告)日：2008-11-18
申请号：US10228136
申请日：2002-08-27
申请人： Masaki Funabashi , Ryosuke Yatsu , Akihiko Kasukawa
发明人： Masaki Funabashi , Ryosuke Yatsu , Akihiko Kasukawa
IPC分类号： H01L33/00
CPC分类号： H01S5/12 , H01S5/0224 , H01S5/02284 , H01S5/02415 , H01S5/068 , H01S5/2275
摘要： A DFB laser assembly including both a DFB laser device, with a buried heterostructure having a cavity length of 400 μm, a differential resistance of 4Ω, an emission wavelength of 1550 nm, and a thermal resistance of 50K/watt or less, and a heat sink mounting the DFB laser device in a junction-down structure so that the DFB laser device has a wavelength/current coefficient at 5 picometers/milli-ampere or less.
摘要翻译： DFB激光器组件包括DFB激光器件，具有400μm的腔长度的掩埋异质结构，40mega的差分电阻，1550nm的发射波长和50K /瓦或更低的热阻，以及热将DFB激光器件沉入安装在结合下降结构中，使得DFB激光器件的波长/电流系数为5皮米/毫安或更小。

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