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    • 7. 发明授权
    • CPP GMR device with ferromagnetic layer split in depth direction
    • 具有铁磁层的CPP GMR器件在深度方向上分裂
    • US07894166B2
    • 2011-02-22
    • US11924246
    • 2007-10-25
    • Hiroshi YamazakiNaoki Ohta
    • Hiroshi YamazakiNaoki Ohta
    • G11B5/39
    • G11B5/3932B82Y10/00B82Y25/00G11B2005/3996
    • A magneto-resistive effect device of a CPP structure includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together and formed with the nonmagnetic intermediate layer sandwiched between them. The first ferromagnetic layer and the second ferromagnetic layer are magnetically coupled via the nonmagnetic intermediate layer such that magnetizations of the first ferromagnetic layer and the second ferromagnetic layer are antiparallel with each other. Mutually antiparallel magnetizations of two magnetic layers lie in a medium opposite plane or front to rear direction and in a rear to front direction. The second ferromagnetic layer is divided by a nonmagnetic intervening layer into a front second ferromagnetic layer and a rear second ferromagnetic layer on the way from the front to the rear.
    • CPP结构的磁阻效应器件包括非磁性中间层以及堆叠在一起形成有非磁性中间层的第一铁磁层和第二铁磁层。 第一铁磁层和第二铁磁层经由非磁性中间层磁耦合,使得第一铁磁层和第二铁磁层的磁化彼此反平行。 两个磁性层的相互反平行磁化位于相对的平面或前后方向的介质中,并且位于从前到后的方向上。 第二铁磁层在从前到后的路上被非磁性中间层分成前第二铁磁层和后第二铁磁层。
    • 9. 发明申请
    • Thin-film patterning method for magnetoresistive device
    • 用于磁阻器件的薄膜图案化方法
    • US20090145878A1
    • 2009-06-11
    • US12000285
    • 2007-12-11
    • Naoki OhtaKazuki SatoKosuke Tanaka
    • Naoki OhtaKazuki SatoKosuke Tanaka
    • B44C1/22
    • G03B31/00G11B5/3163G11B5/3903G11B5/3909
    • The thin-film patterning method for a magnetoresistive device comprises forming a functional layer on a substrate; forming a first mask layer above the functional layer; forming a patterned resist on the first mask layer; etching the first mask layer by using the resist; removing the resist; forming a second mask layer by atomic layer deposition, the second mask layer covering a step defined by an edge of the first mask layer; dry-etching the second mask layer in a thickness direction of the substrate so as to leave the second mask layer on a side face of the step; removing the first mask layer so as to expose the functional layer under the first mask; and dry-etching the functional layer by using the second mask layer.
    • 用于磁阻器件的薄膜构图方法包括在衬底上形成功能层; 在功能层上形成第一掩模层; 在所述第一掩模层上形成图案化抗蚀剂; 通过使用抗蚀剂来蚀刻第一掩模层; 去除抗蚀剂; 通过原子层沉积形成第二掩模层,所述第二掩模层覆盖由所述第一掩模层的边缘限定的台阶; 在所述基板的厚度方向上干蚀刻所述第二掩模层,以使所述第二掩模层在所述台阶的侧面上离开; 去除所述第一掩模层以使所述功能层暴露在所述第一掩模下方; 并通过使用第二掩模层对功能层进行干蚀刻。