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1. 发明授权

US06480934B1 Storage control unit and method for handling data storage system using thereof 有权
公开(公告)号：US06480934B1
公开(公告)日：2002-11-12
申请号：US09406838
申请日：1999-09-28
申请人： Naoki Hino , Toshiya Nakano , Tetsuya Kishimoto , Hidehiko Iwasaki , Kenji Muraoka , Kenichi Takamoto
发明人： Naoki Hino , Toshiya Nakano , Tetsuya Kishimoto , Hidehiko Iwasaki , Kenji Muraoka , Kenichi Takamoto
IPC分类号： G06F1208
CPC分类号： G06F3/0635 , G06F3/0605 , G06F3/0617 , G06F3/0629 , G06F3/0632 , G06F3/067 , G06F3/0685 , G06F11/2089
摘要： For providing a storage control unit to be connected to a fiber channel, in which a new storage control unit is added onto the fiber channel network during on-line operation and succeeds control information of a logical unit from the storage control unit which has been existing before, so as to be in charge of a process request issued to that logical unit from a host computer thereafter, wherein a control memory being able to memorize the control information is provided in each of the storage control units 30 and 40, which information is necessary when succeeding or taking over the logical unit and is represented by such as construction information of a magnetic disk drive within a disk drive unit 20 and construction information of the logical unit, so on. The contents of the control memory within the storage control unit 30 is copied into the control memory of the storage control unit 40 when the new storage control unit 40 is added onto the fiber channel network.

2. 发明授权

US06889286B2 Storage control unit and method for handling data storage system using thereof 失效
标题翻译：存储控制单元及其使用方法
公开(公告)号：US06889286B2
公开(公告)日：2005-05-03
申请号：US10191275
申请日：2002-07-10
申请人： Naoki Hino , Toshiya Nakano , Tetsuya Kishimoto , Hidehiko Iwasaki , Kenji Muraoka , Kenichi Takamoto
发明人： Naoki Hino , Toshiya Nakano , Tetsuya Kishimoto , Hidehiko Iwasaki , Kenji Muraoka , Kenichi Takamoto
IPC分类号： G06F3/06 , G06F11/20 , G06F12/08
CPC分类号： G06F3/0635 , G06F3/0605 , G06F3/0617 , G06F3/0629 , G06F3/0632 , G06F3/067 , G06F3/0685 , G06F11/2089
摘要： For providing a storage control unit to be connected to a fiber channel, in which a new storage control unit is added onto the fiber channel network during on-line operation and succeeds control information of a logical unit from the storage control unit which has been existing before, so as to be in charge of a process request issued to that logical unit from a host computer thereafter, wherein a control memory being able to memorize the control information is provided in each of the storage control units 30 and 40, which information is necessary when succeeding or taking over the logical unit and is represented by such as construction information of a magnetic disk drive within a disk drive unit 20 and construction information of the logical unit, so on. The contents of the control memory within the storage control unit 30 is copied into the control memory of the storage control unit 40 when the new storage control unit 40 is added onto the fiber channel network.
摘要翻译：为了提供连接到光纤通道的存储控制单元，其中在在线操作期间将新的存储控制单元添加到光纤通道网络上，并且从已存在的存储控制单元成功地接收到逻辑单元的控制信息之后，负责从主计算机发出到该逻辑单元的处理请求，其中在每个存储控制单元30和40中提供能够存储控制信息的控制存储器，哪个信息是在逻辑单元成功或接管时所必需的，并且由诸如盘驱动单元20内的磁盘驱动器的构造信息和逻辑单元的构造信息等来表示。当将新的存储控制单元40添加到光纤通道网络上时，存储控制单元30内的控制存储器的内容被复制到存储控制单元40的控制存储器中。

3. 发明授权

US06198315B1 Current detection circuit 失效
标题翻译：电流检测电路
公开(公告)号：US06198315B1
公开(公告)日：2001-03-06
申请号：US09313768
申请日：1999-05-18
申请人： Toshiya Nakano
发明人： Toshiya Nakano
IPC分类号： H02P300
CPC分类号： H02P7/29 , H02P7/04
摘要： A current detection circuit having a voltage conversion section for converting current flowing to a load to a voltage; an amplifier section having an operational amplifier for amplifying the voltage converted by the voltage conversion section; a constant current circuit section having a constant current circuit connected to an input of the operational amplifier; and a current detection section for detecting a load current from a voltage amplified by the amplifier section. The constant current circuit section shifts the input offset voltage to the operational amplifier of the amplifier section. As a result, a dead zone in which a load current cannot be detected due to the input offset voltage of the operational amplifier can be eliminated.
摘要翻译：一种电流检测电路，具有用于将流向负载的电流转换成电压的电压转换部; 放大器部分，具有用于放大由电压转换部分转换的电压的运算放大器; 具有连接到运算放大器的输入端的恒流电路的恒流电路部分; 以及电流检测部分，用于从由放大器部分放大的电压中检测负载电流。恒流电路部分将输入失调电压移动到放大器部分的运算放大器。结果，可以消除由于运算放大器的输入失调电压而不能检测到负载电流的死区。

4. 发明授权

US5675242A Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US5675242A
公开(公告)日：1997-10-07
申请号：US675293
申请日：1996-07-01
申请人： Toshiya Nakano
发明人： Toshiya Nakano
IPC分类号： H01L27/04 , B60R21/01 , B60R21/16 , G05F3/22 , H01L29/78 , H03F1/34 , H03F3/72 , G05F3/08 , B60R21/32 , G05F3/26
CPC分类号： B60R21/017 , G05F3/222
摘要： A semiconductor integrated circuit is disclosed in which a power MOSFET supplies a squib of automobile air bag systems with load current. The power MOSFET Q.sub.1 provides squib Z.sub.L with the load current, and load current signal which outputs from shunt resistor R.sub.s is provided an operational amplifier consisting of transistors Q.sub.4 -Q.sub.10 with a negative feedback signal, so that the load current to be supplied to the squib Z.sub.L is restricted. The negative feedback operation is interrupted by load current function interruption signal which inputs to terminal T.sub.6. A circuit which consists of two current mirror circuits composed of transistors Q.sub.4 -Q.sub.10 and constant current source I.sub.4 supplies the operational amplifier with constant current to interrupt the feedback operation.
摘要翻译：公开了一种半导体集成电路，其中功率MOSFET为负载电流提供汽车气囊系统的爆管。功率MOSFET Q1提供负载电流的点火ZL，并且从分流电阻Rs输出的负载电流信号由具有负反馈信号的晶体管Q4-Q10组成的运算放大器提供，以便提供给点火器的负载电流 ZL受到限制负反馈操作由输入到端子T6的负载电流功能中断信号中断。由晶体管Q4-Q10和恒流源I4组成的两个电流镜电路组成的电路为运算放大器提供恒定电流以中断反馈操作。

5. 发明授权

US06396319B2 Semiconductor integrated circuit with quick charging/discharging circuit 失效
标题翻译：具有快速充放电电路的半导体集成电路
公开(公告)号：US06396319B2
公开(公告)日：2002-05-28
申请号：US09739775
申请日：2000-12-20
申请人： Toshiya Nakano
发明人： Toshiya Nakano
IPC分类号： H03K1722
CPC分类号： G05F3/22
摘要： Disclosed is a semiconductor integrated circuit capable of performing a normal operation from immediately after turn-on of power without deteriorating degree of integration. The collector of an NPN bipolar transistor Q1 is connected to a terminal P1 and the emitter of the same is connected to a positive electrode of a reference voltage source 32. The emitter of an NPN bipolar transistor Q2 is connected to the terminal P1 and the collector of the same is connected to the positive pole of the reference voltage source 32. The reference voltage source 32 generates a reference voltage VREF2 from its positive electrode and the negative electrode is connected to the ground. A differentiating circuit constructed by a capacitor C1 and resistors R1 and R2 applies a base potential which makes the NPN bipolar transistors Q1 and Q2 operative in a predetermined period (time determined by the differentiating circuit) immediately after turn-on of power and, after elapse of the predetermined time, applies a base potential at a ground level.
摘要翻译：公开了一种半导体集成电路，其能够在电源接通之后立即执行正常操作，而不会降低集成度。 NPN双极晶体管Q1的集电极连接到端子P1，并且其发射极连接到参考电压源32的正电极.NNN双极晶体管Q2的发射极连接到端子P1和集电极与参考电压源32的正极连接。参考电压源32从其正极产生参考电压VREF2，并且负电极连接到地。由电容器C1和电阻器R1和R2构成的微分电路施加基极电位，使得NPN双极晶体管Q1和Q2在电源接通之后立即在预定时间段（由微分电路确定的时间）内工作，并且在经过在基准电平上施加基极电位。

6. 发明授权

US5672917A Semiconductor power switch system 失效
标题翻译：半导体电源开关系统
公开(公告)号：US5672917A
公开(公告)日：1997-09-30
申请号：US526270
申请日：1995-09-13
申请人： Toshiya Nakano
发明人： Toshiya Nakano
IPC分类号： G01R31/02 , G01R31/327 , H02H7/20 , H02M1/00 , H03K17/082 , H03K17/18 , H01H47/00
CPC分类号： G01R31/3277 , H03K17/0822 , H03K17/18 , Y10T307/766 , Y10T307/826 , Y10T307/944
摘要： A semiconductor power switch system having a control portion and at least one semiconductor power switch unit (PSU) having a self-diagnosis function to simplify the connection lines between the control portion and the PSU. In the PSU, a diagnosing terminal for transmitting an abnormality signal is, by a connection line in the outer portion, connected to an input terminal for receiving a control signal so that the control signal from the control portion to the PSU and the abnormality signal from the PSU to the control portion are communicated through one bidirectional signal transmission line. That is, if an abnormality has taken place, a transistor is turned on so that the level of the bidirectional signal transmission line is fixed to the level of the abnormality signal through the diagnosing terminal and the connection line.
摘要翻译：一种具有控制部分的半导体功率开关系统和具有自诊断功能的至少一个半导体功率开关单元（PSU），以简化控制部分和PSU之间的连接线。在PSU中，用于发送异常信号的诊断终端通过外部的连接线连接到用于接收控制信号的输入端子，使得从控制部分到PSU的控制信号和来自通过一个双向信号传输线来传送到控制部分的PSU。也就是说，如果发生异常，则晶体管导通，通过诊断端子和连接线将双向信号传输线的电平固定为异常信号的电平。

7. 发明授权

US5541544A Bipolar flip-flop circuit with improved noise immunity 失效
标题翻译：双极触发电路具有改善的抗噪声能力
公开(公告)号：US5541544A
公开(公告)日：1996-07-30
申请号：US307464
申请日：1994-09-19
申请人： Toshiya Nakano
发明人： Toshiya Nakano
IPC分类号： H03K3/286 , H03K3/013 , H03K3/287 , H03K17/16
CPC分类号： H03K3/013 , H03K3/287
摘要： A semiconductor integrated bipolar flip-flop circuit prevents or suppresses erroneous operation arising from a current induced by external noise and flowing through a parasitic capacitance associated with a p-type diffused resistor. The semiconductor integrated circuit includes bipolar transistors that are directly involved with set and reset operations of the flip-flop circuit having bases connected to a two-stage inverter including bipolar transistors so that the bases of the bipolar transistors involved in setting and resetting are not connected directly to a p-type diffused resistor.
摘要翻译：半导体集成双极性触发电路防止或抑制由外部噪声引起的电流产生的错误操作，并流过与p型扩散电阻相关的寄生电容。半导体集成电路包括直接涉及具有连接到包括双极晶体管的两级反相器的基极的触发器电路的置位和复位操作的双极晶体管，使得参与设置和复位的双极晶体管的基极不连接直接连接到p型扩散电阻。

8. 发明授权

US5483404A Semiconductor integrated circuit 失效
标题翻译：半导体集成电路
公开(公告)号：US5483404A
公开(公告)日：1996-01-09
申请号：US402719
申请日：1995-03-13
申请人： Toshiya Nakano
发明人： Toshiya Nakano
IPC分类号： H01L29/78 , H01L27/04 , H02H5/10 , H02P7/00 , H03K17/16 , H03K17/567 , H03K17/687 , H02H7/10
CPC分类号： H02H5/105 , H02P7/04
摘要： A semiconductor integrated circuit allows no through-current to flow to voltage-driven-type power control devices of an external circuit even when the grounding terminals are opened, thereby protecting the devices from breakdown. The semiconductor integrated circuit includes input terminals, a power terminal connected to a drive power source of power MOSFETs, control output terminals connected to control terminals of the power MOSFETs, a grounding terminal divided into at least two grounding terminals that are connected to each other in the exterior, a control logic section, a pre-driver section which outputs a drive control signal to the control terminals of the power MOSFETs and which causes a consumption current to flow to the second grounding terminal, and a consumption current detecting section including a first NPN transistor whose base is connected to the first grounding terminal and whose emitter is connected to the second grounding terminal and a second NPN transistor whose base is connected to the second grounding terminal and whose emitter is connected to the first grounding terminal, and detecting a flow of consumption current between the first and second grounding terminals and clamping the electric potential of the grounding terminal to a level not higher than the drive control potential of the power MOSFETs.
摘要翻译：即使接地端子被打开，半导体集成电路也不允许流过外部电路的电压驱动型功率控制装置，从而保护器件不受损坏。半导体集成电路包括输入端子，连接到功率MOSFET的驱动电源的电源端子，连接到功率MOSFET的控制端子的控制输出端子，分成至少两个彼此连接的接地端子的接地端子外部，控制逻辑部分，将驱动控制信号输出到功率MOSFET的控制端并使消耗电流流向第二接地端子的预驱动器部分，以及消耗电流检测部分，其包括第一 NPN晶体管，其基极连接到第一接地端子并且其发射极连接到第二接地端子;以及第二NPN晶体管，其基极连接到第二接地端子，其发射极连接到第一接地端子，并且检测流的第一和第二接地端子之间的消耗电流并夹紧电极 c接地端子的电位不高于功率MOSFET的驱动控制电位。

9. 发明授权

US6157202A Hybrid IC with circuit for burn-in test 失效
标题翻译：带电路的混合IC，用于老化测试
公开(公告)号：US6157202A
公开(公告)日：2000-12-05
申请号：US100245
申请日：1998-06-19
申请人： Toshiya Nakano
发明人： Toshiya Nakano
IPC分类号： G01R31/26 , G01R31/28 , H01L21/326 , H01L21/66 , H01L21/822 , H01L27/04 , H01L27/12 , G01R31/02
CPC分类号： G01R31/2884 , G01R31/2879 , G01R31/2856
摘要： A hybrid IC with a semiconductor power device and a control circuit for controlling the power device being bare-chip mounted on a substrate includes a wiring arranged between a power source line and a gate of the power device whereby the wiring connects the power source line to the gate during a burn-in test and is cut off after the burn-in test. The hybrid IC preferably provides a wiring pattern for disconnecting the control circuit to the gate of the power device during a burn-in test which is shortcircuited after the burn-in test.
摘要翻译：具有半导体功率器件的混合IC和用于控制裸片上安装在衬底上的功率器件的控制电路包括布置在电源线和功率器件的栅极之间的布线，由此布线将电源线连接到老化试验期间的门，并在老化试验后被切断。混合IC优选地提供用于在老化测试之后短路的老化测试期间将控制电路断开到功率器件的栅极的布线图案。

10. 发明授权

US5459350A Resin sealed type semiconductor device 失效
标题翻译：树脂密封型半导体器件
公开(公告)号：US5459350A
公开(公告)日：1995-10-17
申请号：US318447
申请日：1994-10-05
申请人： Shoji Date , Ziro Honda , Toshiya Nakano , Hazime Kato
发明人： Shoji Date , Ziro Honda , Toshiya Nakano , Hazime Kato
IPC分类号： G01R15/14 , H01L23/48 , H01L23/495 , H01L23/50 , H01L23/16
CPC分类号： H01L23/495 , H01L23/49548 , H01L23/49562 , H01L24/06 , H01L24/49 , H01L2224/04042 , H01L2224/0603 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4516 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/48599 , H01L2224/48699 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/73265 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01013 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/181 , H01L2924/19107 , H01L2924/351
摘要： A resin sealed semiconductor device includes a current-detecting resistance for detecting current flowing in a semiconductor element that is a metallic resistance having a coefficient of thermal expansion almost equal to that of the lead frame. Compared to a conventional ceramic chip resistance, its coefficient of thermal expansion differs less from that of the lead frame, thereby preventing deterioration caused by heat stress.
摘要翻译：树脂密封半导体器件包括用于检测在半导体元件中流动的电流检测电阻，该半导体元件是具有几乎等于引线框的热膨胀系数的金属电阻。与常规陶瓷芯片电阻相比，其热膨胀系数与引线框架的热膨胀系数不同，从而防止热应力引起的劣化。

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