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1. 发明授权

US08460461B2 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same 有权
标题翻译：用于在其上形成外延薄膜的带纹理金属基底及其制造方法
公开(公告)号：US08460461B2
公开(公告)日：2013-06-11
申请号：US13586000
申请日：2012-08-15
申请人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
发明人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
IPC分类号： C30B33/00 , C30B1/00 , C30B3/00 , C30B5/00 , C30B28/02
CPC分类号： B32B15/018 , B32B15/01 , B32B15/013 , C21D8/0278 , C21D8/1277 , C21D9/46 , C21D2201/05 , C21D2251/00 , C21D2251/02 , Y10T428/24612
摘要： The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a silver layer bonded to at least one face of the metallic layer, wherein the silver layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦9 degree. The textured metal substrate can be manufactured by subjecting the silver sheet containing 30 to 200 ppm oxygen by concentration to the orienting treatment of hot-working and heat-treating, and bonding the metal sheet with the oriented silver sheet by using a surface activated bonding process.
摘要翻译：本发明提供了一种用于在其上形成外延薄膜的取向基板，其具有比常规的更高的取向性和高强度的取向基板及其制造方法。本发明提供了一种用于在其上形成外延薄膜的包层纹理金属基底，其包括金属层和与金属层的至少一个表面结合的银层，其中银层具有{100} <001>立方体晶轴的偏角Deltaphi满足Deltaphi @ 9度的纹理。纹理化的金属基材可以通过将含有30〜200ppm氧的银片经受热加工和热处理的定向处理，并通过使用表面活化粘合工艺将金属片与取向的银片接合来制造。

2. 发明授权

US08287643B2 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same 有权
标题翻译：用于在其上形成外延薄膜的带纹理金属基底及其制造方法
公开(公告)号：US08287643B2
公开(公告)日：2012-10-16
申请号：US12101385
申请日：2008-04-11
申请人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
发明人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
IPC分类号： C30B33/06 , C30B1/00 , C30B3/00 , C30B5/00 , C30B28/02
CPC分类号： B32B15/018 , B32B15/01 , B32B15/013 , C21D8/0278 , C21D8/1277 , C21D9/46 , C21D2201/05 , C21D2251/00 , C21D2251/02 , Y10T428/24612
摘要： The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a silver layer bonded to at least one face of the metallic layer, wherein the silver layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦9 degree. The textured metal substrate can be manufactured by subjecting the silver sheet containing 30 to 200 ppm oxygen by concentration to the orienting treatment of hot-working and heat-treating, and bonding the metal sheet with the oriented silver sheet by using a surface activated bonding process.
摘要翻译：本发明提供了一种用于在其上形成外延薄膜的取向基板，其具有比常规的更高的取向性和高强度的取向基板及其制造方法。本发明提供了一种用于在其上形成外延薄膜的包层纹理金属基底，其包括金属层和与金属层的至少一个表面结合的银层，其中银层具有{100} <001>立方体偏离角度的纹理＆Dgr＆amp; 的晶轴满足＆Dgr＆amp;＆nlE; 9度。纹理化的金属基材可以通过将含有30〜200ppm氧的银片经受热加工和热处理的定向处理，并通过使用表面活化粘合工艺将金属片与取向的银片接合来制造。

3. 发明授权

US08147984B2 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same 有权
标题翻译：用于在其上形成外延薄膜的带纹理金属基底及其制造方法
公开(公告)号：US08147984B2
公开(公告)日：2012-04-03
申请号：US12101228
申请日：2008-04-11
申请人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
发明人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
IPC分类号： B32B15/04 , B32B15/18 , B32B37/00 , C22F1/10 , C09J5/02
CPC分类号： C30B29/02 , B32B15/01 , B32B15/015 , C21D8/1277 , C23C26/00 , H01F41/32 , H01L39/2454 , Y10T428/12937 , Y10T428/12944 , Y10T428/31678
摘要： The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. A clad textured metal substrate for forming the epitaxial thin film thereon according to the present invention comprises a metallic layer and a nickel layer which is bonded to at least one face of the metallic layer, wherein the nickel layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦7 degrees and has a nickel purity of 99.9% or more. The oriented metal substrate is manufactured by cold-working the nickel sheet having a purity of 99.9% or more, heat-treating it for orientation, and bonding the metal sheet with the oriented nickel sheet by using a surface activated bonding process.
摘要翻译：本发明提供了一种用于在其上形成外延薄膜的取向基板，其具有比常规的更高的取向性和高强度的取向基板及其制造方法。根据本发明的用于在其上形成外延薄膜的复合纹理金属基底包括金属层和镍层，其结合到金属层的至少一个面上，其中镍层具有{100} <001> 倾斜角＆Dgr;＆phgr; 的晶轴满足＆Dgr＆amp;＆nlE; 7度，镍纯度为99.9％以上。定向金属基板通过对纯度为99.9％以上的镍片进行冷加工，将其热处理以进行取向，并通过表面活性接合法将金属板与取向镍片接合来制造。

4. 发明授权

US07927715B2 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same 有权
标题翻译：用于在其上形成外延薄膜的带纹理金属基底及其制造方法
公开(公告)号：US07927715B2
公开(公告)日：2011-04-19
申请号：US12101348
申请日：2008-04-11
申请人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
发明人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
IPC分类号： B32B15/04 , B32B15/18 , B32B15/20 , B32B18/00
CPC分类号： H01L39/2454 , B32B15/015 , C21D8/12 , C21D8/1277 , Y10T428/12903 , Y10T428/1291 , Y10T428/12924
摘要： A clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the metallic layer, wherein the copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The clad textured metal substrate has an intermediate layer on the surface of the copper layer to form the epitaxial thin film thereon. The intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.
摘要翻译：一种用于在其上形成外延薄膜的包覆纹理金属衬底，其包括金属层和与该金属层的至少一个表面接合的铜层，其中铜层具有{100} 偏角＆Dgr＆amp; 的晶轴满足＆Dgr＆amp;＆nlE; 6度。包层纹理金属基板在铜层的表面上具有中间层，以在其上形成外延薄膜。中间层优选包括至少一层选自镍，氧化镍，氧化锆，稀土氧化物，氧化镁，钛酸锶（STO），钛酸锶钡（SBTO），氮化钛，银，钯，金，铱，钌，铑和铂。

5. 发明申请

US20080261059A1 CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：用于形成外源薄膜的层压金属基材及其制造方法
公开(公告)号：US20080261059A1
公开(公告)日：2008-10-23
申请号：US12101228
申请日：2008-04-11
申请人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
发明人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
IPC分类号： B32B15/01 , C09J5/02 , C23F1/02 , B32B37/00
CPC分类号： C30B29/02 , B32B15/01 , B32B15/015 , C21D8/1277 , C23C26/00 , H01F41/32 , H01L39/2454 , Y10T428/12937 , Y10T428/12944 , Y10T428/31678
摘要： The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. A clad textured metal substrate for forming the epitaxial thin film thereon according to the present invention comprises a metallic layer and a nickel layer which is bonded to at least one face of the metallic layer, wherein the nickel layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦7 degrees and has a nickel purity of 99.9% or more. The oriented metal substrate is manufactured by cold-working the nickel sheet having a purity of 99.9% or more, heat-treating it for orientation, and bonding the metal sheet with the oriented nickel sheet by using a surface activated bonding process.
摘要翻译：本发明提供了一种用于在其上形成外延薄膜的取向基板，其具有比常规的更高的取向性和高强度的取向基板及其制造方法。根据本发明的用于在其上形成外延薄膜的复合纹理金属基底包括金属层和镍层，其结合到金属层的至少一个面上，其中镍层具有{100} <001> 晶体轴的偏角Deltaphi满足Deltaphi <= 7度并且镍纯度为99.9％以上的立方体纹理。定向金属基板通过对纯度为99.9％以上的镍片进行冷加工，将其热处理以进行取向，并通过表面活性接合法将金属板与取向镍片接合来制造。

6. 发明授权

US08038810B2 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same 有权
标题翻译：用于在其上形成外延薄膜的带纹理金属基底及其制造方法
公开(公告)号：US08038810B2
公开(公告)日：2011-10-18
申请号：US13030291
申请日：2011-02-18
申请人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
发明人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
IPC分类号： C22F1/08
CPC分类号： H01L39/2454 , B32B15/015 , C21D8/12 , C21D8/1277 , Y10T428/12903 , Y10T428/1291 , Y10T428/12924
摘要： A method for manufacturing a oriented substrate for forming an epitaxial thin film thereon, having a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The clad textured metal substrate includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The substrate has an intermediate layer on the surface of the copper layer, to form the epitaxial thin film thereon.
摘要翻译：一种制造用于在其上形成外延薄膜的取向基板的方法，其具有比常规方法更好的取向和高强度的方法及其制造方法。包覆纹理金属基板包括金属层和与上述金属层的至少一个表面结合的铜层，其中上述铜层具有{100} <001>立方体结构，其中偏角＆Dgr＆amp; phgr ; 的晶轴满足＆Dgr＆amp;＆nlE; 6度。衬底在铜层的表面上具有中间层，以在其上形成外延薄膜。

7. 发明申请

US20110155050A1 CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：用于形成外源薄膜的层压金属基材及其制造方法
公开(公告)号：US20110155050A1
公开(公告)日：2011-06-30
申请号：US13030291
申请日：2011-02-18
申请人： NAOJI KASHIMA , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
发明人： NAOJI KASHIMA , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
IPC分类号： C30B23/02 , C23F1/00 , C23C14/34 , C23C14/46
CPC分类号： H01L39/2454 , B32B15/015 , C21D8/12 , C21D8/1277 , Y10T428/12903 , Y10T428/1291 , Y10T428/12924
摘要： A method for manufacturing a oriented substrate for forming an epitaxial thin film thereon, having a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The clad textured metal substrate includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The substrate has an intermediate layer on the surface of the copper layer, to form the epitaxial thin film thereon.
摘要翻译：一种制造用于在其上形成外延薄膜的取向基板的方法，其具有比常规方法更好的取向和高强度的方法及其制造方法。包覆纹理金属基板包括金属层和与上述金属层的至少一个表面结合的铜层，其中上述铜层具有{100} <001>立方体结构，其中偏角＆Dgr＆amp; phgr ; 的晶轴满足＆Dgr＆amp;＆nlE; 6度。衬底在铜层的表面上具有中间层，以在其上形成外延薄膜。

8. 发明申请

US20080261072A1 CLAD TEXTURED METAL SUBSTRATE FOR FORMING EPITAXIAL THIN FILM THEREON AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：用于形成外源薄膜的层压金属基材及其制造方法
公开(公告)号：US20080261072A1
公开(公告)日：2008-10-23
申请号：US12101348
申请日：2008-04-11
申请人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
发明人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Hirofumi Hoshino
IPC分类号： B32B15/20 , C22F1/08 , C23C14/34
CPC分类号： H01L39/2454 , B32B15/015 , C21D8/12 , C21D8/1277 , Y10T428/12903 , Y10T428/1291 , Y10T428/12924
摘要： The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100} cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The clad textured metal substrate for forming the epitaxial thin film thereon has an intermediate layer on the surface of the copper layer so as to form the epitaxial thin film thereon, wherein the above described intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.
摘要翻译：本发明提供了一种用于在其上形成外延薄膜的取向基板，其具有比常规的更高的取向性和高强度的取向基板及其制造方法。本发明提供了一种用于在其上形成外延薄膜的包层纹理金属衬底，其包括金属层和与上述金属层的至少一个表面结合的铜层，其中上述铜层具有{100} <001>立方体纹理，其中晶轴的偏角Deltaphi满足Deltaphi <= 6度。用于在其上形成外延薄膜的包层纹理金属基板在铜层的表面上具有中间层，以在其上形成外延薄膜，其中上述中间层优选包括至少一层选自包括镍，氧化镍，氧化锆，稀土氧化物，氧化镁，钛酸锶（STO），钛酸锶钡（SBTO），氮化钛，银，钯，金，铱，钌，铑和铂组成的组。

9. 发明申请

US20090053550A1 TEXTURED SUBSTRATE FOR EPITAXIAL FILM FORMATION AND SURFACE IMPROVING METHOD OF TEXTURED SUBSTRATE FOR EPITAXIAL FILM FORMATION 有权
标题翻译：用于外延膜形成和表面改性的纹理基板用于外延膜形成的纹理基板的方法
公开(公告)号：US20090053550A1
公开(公告)日：2009-02-26
申请号：US12175514
申请日：2008-07-18
申请人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Shuichi Kubota
发明人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Shuichi Kubota
IPC分类号： B32B3/30 , B05D3/02 , B05D1/18
CPC分类号： H01L39/2461 , B32B15/01 , C21D2201/05 , C21D2251/02 , C21D2251/04 , C23C30/00 , C25D5/12 , C25D5/34 , C25D5/50 , C30B25/18 , Y10S977/81 , Y10S977/832 , Y10T428/12396 , Y10T428/12472 , Y10T428/12736 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/12944 , Y10T428/12951 , Y10T428/12958 , Y10T428/12986 , Y10T428/12993 , Y10T428/26 , Y10T428/265
摘要： Orientation degree and smoothness of a substrate surface better than those of conventional ones are provided in a textured substrate for epitaxial thin film growth. The present invention is a textured substrate for epitaxial film formation, including a crystal orientation improving layer made of a metal thin film of 1 to 5000 nm in thickness on the surface of the textured substrate for epitaxial film formation having a textured metal layer at least on one surface, wherein differences between orientation degrees (Δφ and Δω) in the textured metal layer surface and orientation degrees (Δφ and Δω) in the crystal orientation improving layer surface are both 0.1 to 3.0°. Further, when another metal different from the metal constituting this textured substrate crystal orientation improving layer is added equivalent to a thin film which is 30 nm or less, and subsequently is subjected to heat treatment, the smoothness of that surface can be improved. At this time, the surface roughness of the substrate surface becomes 20 nm or less.
摘要翻译：在用于外延薄膜生长的织构化衬底中提供了比常规衬底表面更好的取向度和平滑度。本发明是用于外延膜形成的纹理化衬底，其包括由用于外延膜形成的织构化衬底的表面上的厚度为1至5000nm的金属薄膜制成的晶体取向改进层，其具有纹理化的金属层至少在一个表面，其中纹理金属层表面中的取向度（Deltaphi和Deltaomega）与晶体取向改进层表面中的取向度（Deltaphi和Deltaomega）之间的差为0.1至3.0°。此外，当与构成该织构化衬底晶体取向改善层的金属不同的另一种金属相当于30nm或更小的薄膜，然后进行热处理时，可以提高该表面的平滑度。此时，基板表面的表面粗糙度变为20nm以下。

10. 发明授权

US08039119B2 Textured substrate for epitaxial film formation and surface improving method of textured substrate for epitaxial film formation 有权
标题翻译：用于外延膜形成的纹理衬底和用于外延膜形成的纹理衬底的表面改性方法
公开(公告)号：US08039119B2
公开(公告)日：2011-10-18
申请号：US12175514
申请日：2008-07-18
申请人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Shuichi Kubota
发明人： Naoji Kashima , Shigeo Nagaya , Kunihiro Shima , Shuichi Kubota
IPC分类号： B32B15/04 , B32B15/18 , B32B15/20 , B05D5/00 , B05D1/18 , C25D3/00
CPC分类号： H01L39/2461 , B32B15/01 , C21D2201/05 , C21D2251/02 , C21D2251/04 , C23C30/00 , C25D5/12 , C25D5/34 , C25D5/50 , C30B25/18 , Y10S977/81 , Y10S977/832 , Y10T428/12396 , Y10T428/12472 , Y10T428/12736 , Y10T428/12875 , Y10T428/12882 , Y10T428/12889 , Y10T428/12896 , Y10T428/12903 , Y10T428/12944 , Y10T428/12951 , Y10T428/12958 , Y10T428/12986 , Y10T428/12993 , Y10T428/26 , Y10T428/265
摘要： Orientation degree and smoothness of a substrate surface better than those of conventional ones are provided in a textured substrate for epitaxial thin film growth. The present invention is a textured substrate for epitaxial film formation, including a crystal orientation improving layer made of a metal thin film of 1 to 5000 nm in thickness on the surface of the textured substrate for epitaxial film formation having a textured metal layer at least on one surface, wherein differences between orientation degrees (Δφ and Δω) in the textured metal layer surface and orientation degrees (Δφ and Δω) in the crystal orientation improving layer surface are both 0.1 to 3.0°. Further, when another metal different from the metal constituting this textured substrate crystal orientation improving layer is added equivalent to a thin film which is 30 nm or less, and subsequently is subjected to heat treatment, the smoothness of that surface can be improved. At this time, the surface roughness of the substrate surface becomes 20 nm or less.
摘要翻译：在用于外延薄膜生长的织构化衬底中提供了比常规衬底表面更好的取向度和平滑度。本发明是用于外延膜形成的纹理化衬底，其包括由用于外延膜形成的织构化衬底的表面上的厚度为1至5000nm的金属薄膜制成的晶体取向改进层，其具有纹理化的金属层至少在一个表面，其中晶体取向改进层表面中的纹理金属层表面中的取向度（＆Dgr;＆phgr;和＆Dgr;ω）与取向度（＆Dgr;＆phgr;和＆Dgr;ω）之间的差异为0.1至3.0° 。此外，当与构成该织构化衬底晶体取向改善层的金属不同的另一种金属相当于30nm或更小的薄膜，然后进行热处理时，可以提高该表面的平滑度。此时，基板表面的表面粗糙度变为20nm以下。

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