专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130087730A1 VALVE DEVICE 审中-公开
标题翻译：阀门设备
公开(公告)号：US20130087730A1
公开(公告)日：2013-04-11
申请号：US13616537
申请日：2012-09-14
申请人： Naohito SEKO , Yoshiaki YAMAMOTO
发明人： Naohito SEKO , Yoshiaki YAMAMOTO
IPC分类号： F16K1/00
CPC分类号： F16K1/32 , F16C2361/91
摘要： A valve device includes a shaft, a valving element, a housing, a bearing part, and a breathing path. The shaft is driven in its axial direction. The valving element is displaced integrally with the shaft. The housing accommodates the valving element. The bearing part is provided for the housing, and includes a sliding hole, in which an end portion of the shaft is inserted and which supports the shaft slidably in the axial direction, thereby limiting a displacement direction of the shaft and the valving element to the axial direction. The breathing path communicates between a bottom part of the sliding hole and an inside of the housing.
摘要翻译：阀装置包括轴，阀元件，壳体，轴承部分和呼吸路径。轴沿其轴向被驱动。阀元件与轴一体地移动。外壳容纳阀元件。所述轴承部设置在所述壳体上，并且包括滑动孔，所述轴的端部插入所述滑动孔中，并且所述滑动孔沿轴向可滑动地支撑所述轴，从而将所述轴和所述阀元件的位移方向限制到轴向。呼吸路径在滑动孔的底部和壳体的内部之间连通。

2. 发明申请

US20100304506A1 LASER IRRADIATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：使用其制造半导体器件的激光辐射方法和方法
公开(公告)号：US20100304506A1
公开(公告)日：2010-12-02
申请号：US12850292
申请日：2010-08-04
申请人： Koichiro TANAKA , Yoshiaki YAMAMOTO
发明人： Koichiro TANAKA , Yoshiaki YAMAMOTO
IPC分类号： H01L21/66 , H01L21/268 , B23K26/06
CPC分类号： H01L21/02686 , B23K26/04 , B23K26/0738 , H01L21/02532 , H01L21/02689 , H01L21/2026 , H01L21/268 , H01L27/1285
摘要： The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.
摘要翻译：本发明提供一种激光照射方法，即使在照射物体的厚度不均匀的情况下也能够对照射物进行均匀的激光照射。在照射具有不均匀厚度的照射物体的情况下，通过使用自动聚焦机构，在照射物体和透镜之间的距离保持在照射物体的表面上恒定的同时，进行激光照射。特别地，当通过在照射表面上形成的第一方向和束点的第二方向上相对于激光束照射被照射物体照射激光束时，照射物体与透镜之间的距离在照射对象沿第一和第二方向移动之前由自动对焦机构控制。

3. 发明申请

US20090250590A1 LASER IRRADIATION METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：使用其制造半导体器件的激光辐射方法和方法
公开(公告)号：US20090250590A1
公开(公告)日：2009-10-08
申请号：US12480984
申请日：2009-06-09
申请人： Koichiro TANAKA , Yoshiaki YAMAMOTO
发明人： Koichiro TANAKA , Yoshiaki YAMAMOTO
IPC分类号： G02B27/40 , H01L21/268
CPC分类号： H01L21/02686 , B23K26/04 , B23K26/0738 , H01L21/02532 , H01L21/02689 , H01L21/2026 , H01L21/268 , H01L27/1285
摘要： The present invention is to provide a laser irradiation method for performing homogeneous laser irradiation to the irradiation object even when the thickness of the irradiation object is not even. In the case of irradiating the irradiation object having uneven thickness, the laser irradiation is performed while keeping the distance between the irradiation object and the lens for condensing the laser beam on the surface of the irradiation object constant by using an autofocusing mechanism. In particular, when the irradiation object is irradiated with the laser beam by moving the irradiation object relative to the laser beam in the first direction and the second direction of the beam spot formed on the irradiation surface, the distance between the irradiation object and the lens is controlled by the autofocusing mechanism before the irradiation object is moved in the first and second directions.
摘要翻译：本发明提供一种激光照射方法，即使在照射物体的厚度不均匀的情况下也能够对照射物进行均匀的激光照射。在照射具有不均匀厚度的照射物体的情况下，通过使用自动聚焦机构，在照射物体和透镜之间的距离保持在照射物体的表面上恒定的同时，进行激光照射。特别地，当通过在照射表面上形成的第一方向和束点的第二方向上相对于激光束照射被照射物体照射激光束时，照射物体与透镜之间的距离在照射对象沿第一和第二方向移动之前由自动对焦机构控制。

4. 发明申请

US20090239108A1 FUEL CELL COGENERATION SYSTEM, METHOD OF OPERATING 有权
标题翻译：燃料电池加热系统，操作方法
公开(公告)号：US20090239108A1
公开(公告)日：2009-09-24
申请号：US12476305
申请日：2009-06-02
申请人： Shinji MIYAUCHI , Tetsuya UEDA , Yoshiaki YAMAMOTO
发明人： Shinji MIYAUCHI , Tetsuya UEDA , Yoshiaki YAMAMOTO
IPC分类号： H01M8/04
CPC分类号： H01M8/04052 , F24D17/001 , F24D19/1051 , F24D2200/19 , F24D2220/042 , F24D2240/26 , H01M8/04029 , H01M8/04037 , H01M8/04059 , H01M8/04358 , H01M8/04373 , H01M8/04425 , H01M8/04723 , H01M8/04738 , H01M8/04955 , H01M2250/405 , Y02B90/16 , Y02P80/15
摘要： A method of operating a fuel cell cogeneration system comprises the steps of cooling a fuel cell by circulating an internal heat transfer medium through the fuel cell while the fuel cell is generating electric power, storing an external heat transfer medium in a heat utilization portion, detecting remaining calories of the heat utilization portion by a first detector provided at the heat utilization portion, increasing a temperature of the fuel cell to an operating temperature by carrying out a first temperature increasing operation, and increasing the temperature of the fuel cell to the operating temperature by carrying out a second temperature increasing operation.
摘要翻译：一种操作燃料电池热电联产系统的方法包括以下步骤：在燃料电池产生电力的同时使内部传热介质循环通过燃料电池来冷却燃料电池，将外部传热介质储存在热利用部分中，检测通过设置在热利用部分的第一检测器保持热利用部分的热量，通过进行第一升温操作将燃料电池的温度升高到工作温度，并且将燃料电池的温度提高到工作温度通过进行第二升温操作。

5. 发明申请

US20070205416A1 LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE AND ELECTRONIC DEVICE 审中-公开
标题翻译：发光元件，发光装置和电子装置
公开(公告)号：US20070205416A1
公开(公告)日：2007-09-06
申请号：US11679397
申请日：2007-02-27
申请人： Junichiro SAKATA , Kohei YOKOYAMA , Yoshiaki YAMAMOTO , Takahiro KAWAKAMI
发明人： Junichiro SAKATA , Kohei YOKOYAMA , Yoshiaki YAMAMOTO , Takahiro KAWAKAMI
IPC分类号： H01L33/00
CPC分类号： C09K11/621 , C09K11/641 , C09K11/881 , H05B33/14
摘要： A light emitting element that can be driven at a low voltage is provided. Further, a light emitting device and an electronic device with reduced power consumption are provided. A light emitting element is provided that includes a substrate 100, and a first electrode 101, a first insulating layer 102, a light emitting layer 103, a second insulating layer 104, and a second electrode 105, which are over the substrate 100. The light emitting layer 103 includes a compound ABC2, referred to as a ‘chalcopyrite’ (wherein A is Cu or Ag, B is Al, Ga, or In, and C is S, Se, or Te). By employing such a structure, a light emitting element that can be driven at a low voltage can be provided.
摘要翻译：提供可以以低电压驱动的发光元件。此外，提供了具有降低的功耗的发光装置和电子装置。提供了一种发光元件，其包括基板100，以及位于基板100上方的第一电极101，第一绝缘层102，发光层103，第二绝缘层104和第二电极105。发光层103包括称为“黄铜矿”（其中A为Cu或Ag，B为Al，Ga或In，C为S，Se或Te的化合物ABC 2 ）。通过采用这种结构，可以提供能够以低电压驱动的发光元件。

6. 发明申请

US20070176536A1 LIGHT EMITTING MATERIAL, LIGHT EMITTING DEVICE, AND ELECTRONIC DEVICE 失效
标题翻译：发光材料，发光装置和电子装置
公开(公告)号：US20070176536A1
公开(公告)日：2007-08-02
申请号：US11625114
申请日：2007-01-19
申请人： Junichiro SAKATA , Takahiro KAWAKAMI , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA
发明人： Junichiro SAKATA , Takahiro KAWAKAMI , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA
IPC分类号： H01J1/62
CPC分类号： C09K11/565 , C09K11/54 , C09K11/567 , C09K11/621 , C09K11/7701 , C09K11/883 , H05B33/14
摘要： An object is to provide a novel light emitting material. Another object is to provide a light emitting device and an electronic device with reduced power consumption. Still another object is to provide a light emitting device and an electronic device which can be manufactured at low cost. Provided is a light emitting element including a base material, a first impurity element, a second impurity element, and a third impurity element. The base material is one of ZnS, CdS, CaS, Y2S3, Ga2S3, SrS, BaS, ZnO, Y2O3, AlN, GaN, InN, ZnSe, ZnTe, and SrGa2S4; the first impurity element is any of Cu, Ag, Au, Pt, and Si; the second impurity element is any of F, Cl, Br, I, B, Al, Ga, In, and Tl; and the third impurity element is any of Li, Na, K, Rb, Cs, N, P, As, Sb, and Bi.
摘要翻译：目的是提供一种新颖的发光材料。另一个目的是提供一种降低功耗的发光器件和电子器件。另一个目的是提供一种可以以低成本制造的发光器件和电子器件。提供了包括基材，第一杂质元素，第二杂质元素和第三杂质元素的发光元件。基材是ZnS，CdS，CaS，Y 2 S 3，Ga 2 S 3， SrS，BaS，ZnO，Y 2 O 3，AlN，GaN，InN，ZnSe，ZnTe和SrGa 2 S 4 第一杂质元素是Cu，Ag，Au，Pt和Si中的任一种; 第二杂质元素是F，Cl，Br，I，B，Al，Ga，In和Tl中的任一种; 并且第三杂质元素是Li，Na，K，Rb，Cs，N，P，As，Sb和Bi中的任一种。

7. 发明申请

US20110316082A1 SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US20110316082A1
公开(公告)日：2011-12-29
申请号：US13230086
申请日：2011-09-12
申请人： Tetsuya KAKEHATA , Hideto OHNUMA , Yoshiaki YAMAMOTO , Kenichiro MAKINO
发明人： Tetsuya KAKEHATA , Hideto OHNUMA , Yoshiaki YAMAMOTO , Kenichiro MAKINO
IPC分类号： H01L29/786 , H01L29/02
CPC分类号： H01L27/1218 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/78603 , H01L31/0352
摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.
摘要翻译：本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

8. 发明申请

US20110024406A1 LASER IRRADIATION METHOD AND LASER IRRADIATION APPARATUS 审中-公开
标题翻译：激光辐射方法和激光辐射装置
公开(公告)号：US20110024406A1
公开(公告)日：2011-02-03
申请号：US12899983
申请日：2010-10-07
申请人： Koichiro TANAKA , Yoshiaki YAMAMOTO
发明人： Koichiro TANAKA , Yoshiaki YAMAMOTO
IPC分类号： B23K26/06
CPC分类号： B23K26/066 , B23K26/0738 , H01L27/1285
摘要： An object of the present invention is to provide a laser irradiation method and a laser irradiation apparatus for irradiating an irradiation surface with a linear beam having more homogeneous intensity by blocking a low-intensity part of the linear beam without forming the fringes due to the diffraction on the irradiation surface. In the laser irradiation, a laser beam emitted from a laser oscillator 101 passes through a slit 102 so as to block a low-intensity part of the laser beam, the traveling direction of the laser beam is bent by a mirror 103, and an image formed at the slit is projected to an irradiation surface 106 by a convex cylindrical lens 104.
摘要翻译：本发明的目的是提供一种激光照射方法和激光照射装置，用于通过阻挡线性光束的低强度部分而不会由于衍射而形成条纹而用具有更均匀强度的线性光束照射照射表面在照射面上。在激光照射中，从激光振荡器101发射的激光束通过狭缝102，以阻挡激光束的低强度部分，激光束的行进方向被反射镜103弯曲，并且图像形成在狭缝处的凸起的圆柱形透镜104被投射到照射表面106。

9. 发明申请

US20090114922A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, LIQUID CRYSTAL TELEVISION, AND EL TELEVISION 有权
标题翻译：半导体器件及其制造方法，液晶电视和电视
公开(公告)号：US20090114922A1
公开(公告)日：2009-05-07
申请号：US12330055
申请日：2008-12-08
申请人： Hiroko SHIROGUCHI , Yoshiaki YAMAMOTO
发明人： Hiroko SHIROGUCHI , Yoshiaki YAMAMOTO
IPC分类号： H01L29/06
CPC分类号： H01L27/1292 , H01L51/524 , H01L51/5246 , H01L51/5281
摘要： An object of the present invention is to provide a method for manufacturing a semiconductor device having a semiconductor element capable of reducing a cost and improving a throughput with a minute structure, and further, a method for manufacturing a liquid crystal television and an EL television. According to one feature of the invention, a method for manufacturing a semiconductor device comprises the steps of: forming a light absorption layer over a substrate, forming a first region over the light absorption layer by using a solution, generating heat by irradiating the light absorption layer with laser light, and forming a first film pattern by heating the first region with the heat.
摘要翻译：本发明的目的是提供一种半导体器件的制造方法，该半导体器件具有能够以微小结构降低成本并提高生产量的半导体元件，此外，还提供了一种制造液晶电视和EL电视的方法。根据本发明的一个特征，一种制造半导体器件的方法包括以下步骤：在衬底上形成光吸收层，通过使用溶液在光吸收层上形成第一区域，通过照射光吸收产生热量并且通过用热量加热第一区域来形成第一膜图案。

10. 发明申请

US20070190235A1 FILM FORMING APPARATUS, FILM FORMING METHOD, AND MANUFACTURING METHOD OF LIGHT EMITTING ELEMENT 审中-公开
标题翻译：薄膜成型装置，薄膜成型方法和发光元件的制造方法
公开(公告)号：US20070190235A1
公开(公告)日：2007-08-16
申请号：US11671225
申请日：2007-02-05
申请人： Shunpei YAMAZAKI , Junichiro SAKATA , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA , Rie MATSUBARA , Takahiro KAWAKAMI
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Yoshiaki YAMAMOTO , Miki KATAYAMA , Kohei YOKOYAMA , Rie MATSUBARA , Takahiro KAWAKAMI
IPC分类号： B05D5/12 , B05D5/06 , C23C8/00 , C23C16/00
CPC分类号： H01L51/001 , B05D1/60 , B05D5/061 , C23C14/24 , H01L51/0027
摘要： An object of the present invention is to provide a film forming method for forming a film with reduced defect and to provide a film forming method for forming a film with a uniform quality. In addition, another object is to provide a manufacturing method of a light emitting element which can be driven with low voltage. Further, another object is to provide a manufacturing method of a light emitting element with high light emission efficiency. A film with reduced defect and a uniform quality can be formed by fixing a substrate to a substrate holding unit so that at least a part of a surface of the substrate is exposed, evaporating a vapor deposition material from an evaporation source filled with the vapor deposition material, irradiating the vapor deposition material which is evaporated with a laser beam, and depositing the vapor deposition material on the surface of the substrate.
摘要翻译：本发明的目的是提供一种用于形成缺陷少的膜的成膜方法，并且提供一种质量均匀的膜形成方法。此外，另一个目的是提供一种能够以低电压驱动的发光元件的制造方法。此外，另一个目的是提供一种具有高发光效率的发光元件的制造方法。可以通过将基板固定到基板保持单元上，使得基板的表面的至少一部分被暴露，从填充有气相沉积的蒸发源蒸发蒸镀材料，照射用激光束蒸发的蒸镀材料，将该蒸镀材料沉积在基板的表面上。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式