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1. 发明授权

US09957133B2 Elevator apparatus 有权
公开(公告)号：US09957133B2
公开(公告)日：2018-05-01
申请号：US14761221
申请日：2013-02-07
申请人： Naohiro Shiraishi , Seiji Watanabe , Kotaro Fukui
发明人： Naohiro Shiraishi , Seiji Watanabe , Kotaro Fukui
IPC分类号： B66B5/12 , B66B5/04 , B66B7/10
CPC分类号： B66B5/12 , B66B5/04 , B66B7/10
摘要： In an elevator apparatus, a safety device is activated using a force that is generated by a mass body that includes sheaves and a rope, if acceleration of a car reaches an abnormal acceleration set value. A tensioning sheave that can be moved vertically in order to apply tension to the rope is included among the sheaves. A vertical vibration suppressing apparatus that is connected to the tensioning sheave allows vertical displacement of the tensioning sheave during normal operation while also suppressing vertical vibration of the tensioning sheave if the acceleration of the car reaches the abnormal acceleration set value.

2. 发明授权

US09586792B2 Emergency stop device for elevator 有权
标题翻译：电梯紧急停机装置
公开(公告)号：US09586792B2
公开(公告)日：2017-03-07
申请号：US14419119
申请日：2012-08-02
申请人： Naohiro Shiraishi
发明人： Naohiro Shiraishi
IPC分类号： B66B5/22
CPC分类号： B66B5/22
摘要： An emergency stop device for an elevator, including: a supporting member; a receiving-side braking member provided to the supporting member; a pressing-side braking member for gripping a guide rail together with the receiving-side braking member by being displaced upward with respect to the supporting member while being guided by an inclined guide portion of the supporting member; and an adjusting elastic member for generating an elastic restoring force acting against the upward displacement of the pressing-side braking member. A magnitude of a gripping force, which is generated when the guide rail is gripped between the receiving-side braking member and the pressing-side braking member, increases as the pressing-side braking member is displaced upward with respect to the supporting member. A magnitude of the elastic restoring force of the adjusting elastic member increases as the pressing-side braking member is displaced upward with respect to the supporting member.
摘要翻译：一种用于电梯的紧急停止装置，包括：支撑构件; 设置在所述支撑部件上的接收侧制动部件; 一个按压侧制动构件，用于通过在支撑构件的倾斜的引导部分的引导下相对于支撑构件向上移位而与接收侧制动构件一起夹持导轨; 以及用于产生抵抗所述按压侧制动部件向上移动的弹性恢复力的调节弹性部件。当按压侧制动构件相对于支撑构件向上移位时，当导轨夹在接收侧制动构件和按压侧制动构件之间时产生的夹紧力的大小增加。当按压侧制动构件相对于支撑构件向上移位时，调节弹性构件的弹性恢复力的大小增加。

3. 发明申请

US20150217971A1 EMERGENCY STOP DEVICE FOR ELEVATOR 有权
标题翻译：电梯紧急停止装置
公开(公告)号：US20150217971A1
公开(公告)日：2015-08-06
申请号：US14419119
申请日：2012-08-02
申请人： Naohiro Shiraishi
发明人： Naohiro Shiraishi
IPC分类号： B66B5/22
CPC分类号： B66B5/22
摘要： An emergency stop device for an elevator, including: a supporting member; a receiving-side braking member provided to the supporting member; a pressing-side braking member for gripping a guide rail together with the receiving-side braking member by being displaced upward with respect to the supporting member while being guided by an inclined guide portion of the supporting member; and an adjusting elastic member for generating an elastic restoring force acting against the upward displacement of the pressing-side braking member. A magnitude of a gripping force, which is generated when the guide rail is gripped between the receiving-side braking member and the pressing-side braking member, increases as the pressing-side braking member is displaced upward with respect to the supporting member. A magnitude of the elastic restoring force of the adjusting elastic member increases as the pressing-side braking member is displaced upward with respect to the supporting member.
摘要翻译：一种用于电梯的紧急停止装置，包括：支撑构件; 设置在所述支撑部件上的接收侧制动部件; 一个按压侧制动构件，用于通过在支撑构件的倾斜的引导部分的引导下相对于支撑构件向上移位而与接收侧制动构件一起夹持导轨; 以及用于产生抵抗所述按压侧制动部件向上移动的弹性恢复力的调节弹性部件。当按压侧制动构件相对于支撑构件向上移位时，当导轨夹在接收侧制动构件和按压侧制动构件之间时产生的夹紧力的大小增加。当按压侧制动构件相对于支撑构件向上移位时，调节弹性构件的弹性恢复力的大小增加。

4. 发明申请

US20110159650A1 DMOS Type Semiconductor Device and Method for Manufacturing the same 有权
标题翻译： DMOS型半导体器件及其制造方法
公开(公告)号：US20110159650A1
公开(公告)日：2011-06-30
申请号：US13039636
申请日：2011-03-03
申请人： Naohiro Shiraishi
发明人： Naohiro Shiraishi
IPC分类号： H01L21/336
CPC分类号： H01L29/0856 , H01L21/26586 , H01L29/0865 , H01L29/0878 , H01L29/42368 , H01L29/66681 , H01L29/7816
摘要： A DMOS type semiconductor device and a method for manufacturing the same are provided. An isolation oxide layer with an ion implantation opening is formed on a semiconductor. A gate oxide film is formed on the semiconductor within the ion implantation opening. A gate is formed on the isolation oxide layer and the gate oxide film. A body layer diffusively formed in the semiconductor by implanting ions of an impurity element having a first conduction type from the ion implantation opening. A regulation layer which is shallower than the body layer is diffusively formed in the body layer by implanting ions of an impurity element having a second conduction type opposite to the first conduction type from the ion implantation opening. A source layer is diffusively formed in the regulation layer by implanting ions of an impurity element having the second conduction type from the ion implantation opening. The regulation layer is formed so as to horizontally extend beyond a region in which a gate bird's beak occurs from an end of the gate toward underlying layers of the gate.
摘要翻译：提供了一种DMOS型半导体器件及其制造方法。在半导体上形成具有离子注入开口的隔离氧化物层。在离子注入开口内的半导体上形成栅极氧化膜。在隔离氧化物层和栅极氧化膜上形成栅极。通过从离子注入开口注入具有第一导电类型的杂质元素的离子，在半导体中扩散地形成体层。通过从离子注入口注入具有与第一导电类型相反的第二导电类型的杂质元素的离子，在体层中散布比体层浅的调节层。源极层通过从离子注入开口注入具有第二导电类型的杂质元素的离子而在调节层中扩散形成。调节层形成为水平地延伸超过栅极鸟嘴从栅极的端部朝向栅极的下层发生的区域。

5. 发明申请

US20090032867A1 DMOS TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译： DMOS型半导体器件及其制造方法
公开(公告)号：US20090032867A1
公开(公告)日：2009-02-05
申请号：US12177263
申请日：2008-07-22
申请人： Naohiro Shiraishi
发明人： Naohiro Shiraishi
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/0856 , H01L21/26586 , H01L29/0865 , H01L29/0878 , H01L29/42368 , H01L29/66681 , H01L29/7816
摘要： A DMOS type semiconductor device and a method for manufacturing the same are provided. An isolation oxide layer with an ion implantation opening is formed on a semiconductor. A gate oxide film is formed on the semiconductor within the ion implantation opening. A gate is formed on the isolation oxide layer and the gate oxide film. A body layer diffusively formed in the semiconductor by implanting ions of an impurity element having a first conduction type from the ion implantation opening. A regulation layer which is shallower than the body layer is diffusively formed in the body layer by implanting ions of an impurity element having a second conduction type opposite to the first conduction type from the ion implantation opening. A source layer is diffusively formed in the regulation layer by implanting ions of an impurity element having the second conduction type from the ion implantation opening. The regulation layer is formed so as to horizontally extend beyond a region in which a gate bird's beak occurs from an end of the gate toward underlying layers of the gate.
摘要翻译：提供了一种DMOS型半导体器件及其制造方法。在半导体上形成具有离子注入开口的隔离氧化物层。在离子注入开口内的半导体上形成栅极氧化膜。在隔离氧化物层和栅极氧化膜上形成栅极。通过从离子注入开口注入具有第一导电类型的杂质元素的离子，在半导体中扩散地形成体层。通过从离子注入口注入具有与第一导电类型相反的第二导电类型的杂质元素的离子，在体层中散布比体层浅的调节层。源极层通过从离子注入开口注入具有第二导电类型的杂质元素的离子而在调节层中扩散形成。调节层形成为水平地延伸超过栅极鸟嘴从栅极的端部朝向栅极的下层发生的区域。

6. 发明授权

US11569373B2 Semiconductor device and method for manufacturing semiconductor device 有权
公开(公告)号：US11569373B2
公开(公告)日：2023-01-31
申请号：US17337662
申请日：2021-06-03
申请人： Masatoshi Yatago , Naohiro Shiraishi , Katsunori Kondo , Noriyoshi Watanabe
发明人： Masatoshi Yatago , Naohiro Shiraishi , Katsunori Kondo , Noriyoshi Watanabe
IPC分类号： H01L29/739 , H01L29/06 , H01L29/10 , H01L29/40 , H01L29/66
摘要： A semiconductor device includes first and second trenches, and a first layer provided therebetween, in a principal surface of a semiconductor substrate, a second layer in contact with and sandwiching the first trench with the first layer, a third layer provided under the second layer and in contact with the second layer and the first trench, a fourth layer provided under and in contact with the third layer but separated from the first trench, and a fifth layer provided in the principal surface and sandwiching the second trench with the first layer. The second and fourth layers are semiconductors of a first conductivity type, and the first, third, and fifth layers are semiconductors of a second conductivity type. A gate trench electrode is provided inside the first trench via the insulating film, and an emitter trench electrode is provided inside the second trench via the insulating film.

7. 发明授权

US08247295B2 DMOS type semiconductor device and method for manufacturing the same 有权
标题翻译： DMOS型半导体器件及其制造方法
公开(公告)号：US08247295B2
公开(公告)日：2012-08-21
申请号：US13039636
申请日：2011-03-03
申请人： Naohiro Shiraishi
发明人： Naohiro Shiraishi
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L29/0856 , H01L21/26586 , H01L29/0865 , H01L29/0878 , H01L29/42368 , H01L29/66681 , H01L29/7816
摘要： A DMOS type semiconductor device and a method for manufacturing the same are provided. An isolation oxide layer with an ion implantation opening is formed on a semiconductor. A gate oxide film is formed on the semiconductor within the ion implantation opening. A gate is formed on the isolation oxide layer and the gate oxide film. A body layer diffusively formed in the semiconductor by implanting ions of an impurity element having a first conduction type from the ion implantation opening. A regulation layer which is shallower than the body layer is diffusively formed in the body layer by implanting ions of an impurity element having a second conduction type opposite to the first conduction type from the ion implantation opening. A source layer is diffusively formed in the regulation layer by implanting ions of an impurity element having the second conduction type from the ion implantation opening. The regulation layer is formed so as to horizontally extend beyond a region in which a gate bird's beak occurs from an end of the gate toward underlying layers of the gate.
摘要翻译：提供了一种DMOS型半导体器件及其制造方法。在半导体上形成具有离子注入开口的隔离氧化物层。在离子注入开口内的半导体上形成栅极氧化膜。在隔离氧化物层和栅极氧化膜上形成栅极。通过从离子注入开口注入具有第一导电类型的杂质元素的离子，在半导体中扩散地形成体层。通过从离子注入口注入具有与第一导电类型相反的第二导电类型的杂质元素的离子，在体层中散布比体层浅的调节层。源极层通过从离子注入开口注入具有第二导电类型的杂质元素的离子而在调节层中扩散形成。调节层形成为水平地延伸超过栅极鸟嘴从栅极的端部朝向栅极的下层发生的区域。

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