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1. 发明申请

US20080145961A1 Semiconductor Light Emitting Device and Manufacturing Method Thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20080145961A1
公开(公告)日：2008-06-19
申请号：US12031068
申请日：2008-02-14
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L21/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

2. 发明授权

US07595206B2 Manufacturing method for semiconductor light emitting device 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US07595206B2
公开(公告)日：2009-09-29
申请号：US12031068
申请日：2008-02-14
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

3. 发明申请

US20050281303A1 Semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050281303A1
公开(公告)日：2005-12-22
申请号：US11154814
申请日：2005-06-17
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L33/26 , H01L33/40 , H01L33/62 , H01S5/00
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

4. 发明授权

US07411220B2 Semiconductor light emitting device and manufacturing method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07411220B2
公开(公告)日：2008-08-12
申请号：US11154814
申请日：2005-06-17
申请人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
发明人： Naochika Horio , Munehiro Kato , Masahiko Tsuchiya , Satoshi Tanaka
IPC分类号： H01L29/26
CPC分类号： H01L33/38 , H01L33/08 , H01L33/20 , H01L33/405 , H01L33/44 , H01L2224/13 , H01L2224/48463 , H01L2933/0016
摘要： A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can include a first conductive type semiconductor layer, a luminescent layer, a second conductive type semiconductor layer, and first and second electrodes disposed to make contact with the first and second conductive type semiconductor layers, respectively. The first conductive type semiconductor layer, the luminescent layer, and the second conductive type semiconductor layer can be laminated in order from the side adjacent the substrate. An end face of the semiconductor layer can include a first terrace provided in an end face of the first conductive type semiconductor layer in parallel with the substrate surface, and an inclined end face region provided nearer to the substrate than the first terrace. The first electrode disposed in the inclined end face region can reflect light emitted from the luminescent layer to the substrate.
摘要翻译：半导体发光器件可以具有稳定的电特性并且可以从衬底表面发射具有高强度的光。该器件可以在衬底上包括透明衬底和半导体层。半导体层可以包括第一导电类型半导体层，发光层，第二导电类型半导体层以及设置成与第一和第二导电类型半导体层接触的第一和第二电极。第一导电型半导体层，发光层和第二导电型半导体层可以从邻近基板的一侧依次层叠。半导体层的端面可以包括设置在与基板表面平行的第一导电类型半导体层的端面中的第一平台以及比第一平台更靠近基板的倾斜端面区域。设置在倾斜端面区域中的第一电极可以将从发光层发射的光反射到基板。

5. 发明授权

US07605403B2 Semiconductor light-emitting device and fabrication method of the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07605403B2
公开(公告)日：2009-10-20
申请号：US11125142
申请日：2005-05-10
申请人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
发明人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
IPC分类号： H01L27/15
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/05001 , H01L2224/13
摘要： A semiconductor light-emitting device can include a nitride semiconductor light-emitting layer and can supply a current to an entire light-emitting region quickly and efficiently to output high-intensity light. The semiconductor light-emitting device can include: a transparent substrate; a first conductivity type nitride semiconductor layer; a nitride semiconductor light-emitting layer; a second conductivity type nitride semiconductor layer; a notch region that cuts the second conductivity type nitride semiconductor layer and the nitride semiconductor light-emitting layer and exposes the first conductivity type nitride semiconductor layer, to define mesa active regions and a mesa electrode drawing region; an electrode for the first conductivity type; an ohmic electrode for the second conductivity type; and a supporting substrate including connecting members for the first and second conductivity types.
摘要翻译：半导体发光器件可以包括氮化物半导体发光层，并且可以快速高效地向整个发光区域提供电流以输出高强度光。半导体发光装置可以包括：透明基板; 第一导电型氮化物半导体层; 氮化物半导体发光层; 第二导电型氮化物半导体层; 切割第二导电型氮化物半导体层和氮化物半导体发光层并露出第一导电型氮化物半导体层以限定台面有源区和台面电极绘图区的切口区; 用于第一导电类型的电极; 用于第二导电类型的欧姆电极; 以及支撑基板，其包括用于第一和第二导电类型的连接构件。

6. 发明授权

US07271426B2 Semiconductor light emitting device on insulating substrate and its manufacture method 有权
标题翻译：绝缘基板上的半导体发光器件及其制造方法
公开(公告)号：US07271426B2
公开(公告)日：2007-09-18
申请号：US10971305
申请日：2004-10-22
申请人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
发明人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L21/00 , H01L21/44
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/05001 , H01L2224/13
摘要： A semiconductor LED device includes: a transparent substrate stacked on which are an n-type nitride semiconductor layer, a nitride semiconductor light emission layer and a p-type nitride semiconductor layer; recess regions cutting the p-type layer and light emission layer and exposing the n-type layer, defining a plurality of mesa active regions and mesa electrode pull-up regions; an n-side electrode formed on the n-type layer in the recess surrounding the mesa active regions and extending onto the mesa electrode pull-up regions; a p-side electrode formed on the p-type layer of each of the mesa active regions; and a support substrate including n-side connection members connected to and facing the n-type electrodes and p-side connection members connected to and facing the p-side electrodes.
摘要翻译：半导体LED器件包括：层叠有n型氮化物半导体层，氮化物半导体发光层和p型氮化物半导体层的透明衬底; 凹陷区域切割p型层和发光层并暴露n型层，限定多个台面活性区域和台面电极上拉区域; n侧电极，形成在所述凹部中的所述凹部中的所述n型层上，并且延伸到所述台面电极上拉区域; p侧电极，形成在各台面活性区域的p型层上; 以及支撑基板，其包括连接到n面电极的n侧连接构件和与p侧电极连接并面向p侧电极的p侧连接构件。

7. 发明申请

US20050253161A1 Semiconductor light emitting device on insulating substrate and its manufacture method 有权
标题翻译：绝缘基板上的半导体发光器件及其制造方法
公开(公告)号：US20050253161A1
公开(公告)日：2005-11-17
申请号：US10971305
申请日：2004-10-22
申请人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
发明人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
IPC分类号： H01L29/06 , H01L33/06 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/34 , H01L33/38 , H01L33/40
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/05001 , H01L2224/13
摘要： A semiconductor LED device includes: a transparent substrate stacked on which are an n-type nitride semiconductor layer, a nitride semiconductor light emission layer and a p-type nitride semiconductor layer; recess regions cutting the p-type layer and light emission layer and exposing the n-type layer, defining a plurality of mesa active regions and mesa electrode pull-up regions; an n-side electrode formed on the n-type layer in the recess surrounding the mesa active regions and extending onto the mesa electrode pull-up regions; a p-side electrode formed on the p-type layer of each of the mesa active regions; and a support substrate including n-side connection members connected to and facing the n-type electrodes and p-side connection members connected to and facing the p-side electrodes.
摘要翻译：半导体LED器件包括：层叠有n型氮化物半导体层，氮化物半导体发光层和p型氮化物半导体层的透明衬底; 凹陷区域切割p型层和发光层并暴露n型层，限定多个台面活性区域和台面电极上拉区域; n侧电极，形成在所述凹部中的所述凹部中的所述n型层上，并且延伸到所述台面电极上拉区域; p侧电极，形成在各台面活性区域的p型层上; 以及支撑基板，其包括连接到n面电极的n侧连接构件和与p侧电极连接并面向p侧电极的p侧连接构件。

8. 发明申请

US20050253156A1 Semiconductor light-emitting device and fabrication method of the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20050253156A1
公开(公告)日：2005-11-17
申请号：US11125142
申请日：2005-05-10
申请人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
发明人： Naochika Horio , Masahiko Tsuchiya , Munehiro Kato
IPC分类号： H01L29/06 , H01L33/06 , H01L33/14 , H01L33/20 , H01L33/32 , H01L33/34 , H01L33/38 , H01L33/40
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2224/05001 , H01L2224/13
摘要： A semiconductor light-emitting device can include a nitride semiconductor light-emitting layer and can supply a current to an entire light-emitting region quickly and efficiently to output high-intensity light. The semiconductor light-emitting device can include: a transparent substrate; a first conductivity type nitride semiconductor layer; a nitride semiconductor light-emitting layer; a second conductivity type nitride semiconductor layer; a notch region that cuts the second conductivity type nitride semiconductor layer and the nitride semiconductor light-emitting layer and exposes the first conductivity type nitride semiconductor layer, to define mesa active regions and a mesa electrode drawing region; an electrode for the first conductivity type; an ohmic electrode for the second conductivity type; and a supporting substrate including connecting members for the first and second conductivity types.
摘要翻译：半导体发光器件可以包括氮化物半导体发光层，并且可以快速高效地向整个发光区域提供电流以输出高强度光。半导体发光装置可以包括：透明基板; 第一导电型氮化物半导体层; 氮化物半导体发光层; 第二导电型氮化物半导体层; 切割第二导电型氮化物半导体层和氮化物半导体发光层并露出第一导电型氮化物半导体层以限定台面有源区和台面电极绘图区的切口区; 用于第一导电类型的电极; 用于第二导电类型的欧姆电极; 以及支撑基板，其包括用于第一和第二导电类型的连接构件。

9. 发明授权

US07763898B2 Light emitting device having high optical output efficiency 有权
标题翻译：具有高光输出效率的发光器件
公开(公告)号：US07763898B2
公开(公告)日：2010-07-27
申请号：US11589297
申请日：2006-10-30
申请人： Satoshi Tanaka , Naochika Horio , Masahiko Tsuchiya
发明人： Satoshi Tanaka , Naochika Horio , Masahiko Tsuchiya
IPC分类号： H01L27/15 , H01L29/18 , H01L31/12 , H01L33/00
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; a lower side electrode electrically connected to said lower semiconductor layer; and an upper side electrode electrically connected to said upper semiconductor layer, wherein said upper side electrode is formed on said upper semiconductor layer, and said upper semiconductor layer has a mesh pattern defining a plurality of sections each surrounded by said upper side electrode, and wherein at least one dent is disposed in at least one of said sections, said dent having a bottom reaching at least an upper surface of said lower semiconductor layer and having an opening with an upper edge spaced apart from said upper side electrode.
摘要翻译：发光器件包括第一导电类型的下半导体层; 形成在所述下半导体层上的光发射层; 与所述第一导电类型相反的第二导电类型的上半导体层，所述上半导体层形成在所述光发射层上; 电连接到所述下半导体层的下侧电极; 电连接到所述上半导体层的上侧电极，其中所述上侧电极形成在所述上半导体层上，并且所述上半导体层具有限定由所述上侧电极围绕的多个部分的网格图案，并且其中至少一个凹痕设置在所述部分中的至少一个中，所述凹陷具有到达所述下半导体层的至少上表面的底部，并且具有开口，所述开口具有与所述上侧电极间隔开的上边缘。

10. 发明申请

US20070131941A1 Light emitting device having high optical output efficiency 有权
标题翻译：具有高光输出效率的发光器件
公开(公告)号：US20070131941A1
公开(公告)日：2007-06-14
申请号：US11589297
申请日：2006-10-30
申请人： Satoshi Tanaka , Naochika Horio , Masahiko Tsuchiya
发明人： Satoshi Tanaka , Naochika Horio , Masahiko Tsuchiya
IPC分类号： H01L33/00 , H01L31/12 , H01L27/15 , H01L29/26
CPC分类号： H01L33/08 , H01L33/20 , H01L33/38 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： A light emitting device includes a lower semiconductor layer of a first conductivity type; an optical emission layer formed on said lower semiconductor layer; an upper semiconductor layer of a second conductivity type opposite to said first conductivity type, said upper semiconductor layer being formed on said optical emission layer; a lower side electrode electrically connected to said lower semiconductor layer; and an upper side electrode electrically connected to said upper semiconductor layer, wherein said upper side electrode is formed on said upper semiconductor layer, and said upper semiconductor layer has a mesh pattern defining a plurality of sections each surrounded by said upper side electrode, and wherein at least one dent is disposed in at least one of said sections, said dent having a bottom reaching at least an upper surface of said lower semiconductor layer and having an opening with an upper edge spaced apart from said upper side electrode.
摘要翻译：发光器件包括第一导电类型的下半导体层; 形成在所述下半导体层上的光发射层; 与所述第一导电类型相反的第二导电类型的上半导体层，所述上半导体层形成在所述光发射层上; 电连接到所述下半导体层的下侧电极; 电连接到所述上半导体层的上侧电极，其中所述上侧电极形成在所述上半导体层上，并且所述上半导体层具有限定由所述上侧电极围绕的多个部分的网格图案，并且其中至少一个凹痕设置在所述部分中的至少一个中，所述凹陷具有到达所述下半导体层的至少上表面的底部，并且具有开口，所述开口具有与所述上侧电极间隔开的上边缘。

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